BSC022N04 Infineon Technologies - Transistors - FETs, MOSFETs - Single

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Compare Parts Datasheets Image Digi-Key Part Number Manufacturer Part Number Manufacturer Description Quantity Available
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Packaging Series Part Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Mounting Type Supplier Device Package Package / Case
   
BSC022N04LSATMA1 Datasheet BSC022N04LSATMA1 - Infineon Technologies BSC022N04LSATMA1TR-ND MOSFET N-CH 40V 100A TDSON-8 0 Available: 0
Standard Lead Time 39 Weeks
$0.96218 5,000 Minimum: 5,000 Tape & Reel (TR)?
Alternate Packaging
OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40V 100A (Tc) 4.5V, 10V 2.2mOhm @ 50A, 10V 2V @ 250µA 37nC @ 10V ±20V 2600pF @ 20V
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2.5W (Ta), 69W (Tc) -55°C ~ 150°C (TJ) Surface Mount PG-TDSON-8-6 8-PowerTDFN
BSC022N04LSATMA1 Datasheet BSC022N04LSATMA1 - Infineon Technologies BSC022N04LSATMA1CT-ND MOSFET N-CH 40V 100A TDSON-8 0 Available: 0
Standard Lead Time 39 Weeks
$2.46000 1 Minimum: 1 Cut Tape (CT)?
Alternate Packaging
OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40V 100A (Tc) 4.5V, 10V 2.2mOhm @ 50A, 10V 2V @ 250µA 37nC @ 10V ±20V 2600pF @ 20V
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2.5W (Ta), 69W (Tc) -55°C ~ 150°C (TJ) Surface Mount PG-TDSON-8-6 8-PowerTDFN
BSC022N04LSATMA1 Datasheet BSC022N04LSATMA1 - Infineon Technologies BSC022N04LSATMA1DKR-ND MOSFET N-CH 40V 100A TDSON-8 0 Available: 0
Standard Lead Time 39 Weeks
Digi-Reel® 1 Minimum: 1 Digi-Reel®?
Alternate Packaging
OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40V 100A (Tc) 4.5V, 10V 2.2mOhm @ 50A, 10V 2V @ 250µA 37nC @ 10V ±20V 2600pF @ 20V
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2.5W (Ta), 69W (Tc) -55°C ~ 150°C (TJ) Surface Mount PG-TDSON-8-6 8-PowerTDFN
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22:01:18 6/15/2019