MBT2222ADW1, NSVBT2222ADW1 Datasheet by ON Semiconductor

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0N Semiconductor® HHH I210 DI]
© Semiconductor Components Industries, LLC, 2013
September, 2013 Rev. 5
1Publication Order Number:
MBT2222ADW1T1/D
MBT2222ADW1,
NSVBT2222ADW1
General Purpose Transistor
NPN Silicon
Features
Moisture Sensitivity Level: 1
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AECQ101
Qualified and PPAP Capable
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
CollectorEmitter Voltage VCEO 40 Vdc
CollectorBase Voltage VCBO 75 Vdc
EmitterBase Voltage VEBO 6.0 Vdc
Collector Current Continuous IC600 mAdc
Electrostatic Discharge ESD HBM Class 2
MM Class B
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Package Dissipation (Note 1),
TA = 25°C
PD150 mW
Thermal Resistance,
JunctiontoAmbient
RqJA 833 °C/W
Junction and Storage Temperature TJ, Tstg 55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum
recommended footprint.
Device Package Shipping
ORDERING INFORMATION
MARKING DIAGRAM
Q1
(1)(2)
(3)
(4) (5) (6)
Q2
SC88/SC706/SOT363
CASE 419B
STYLE 1
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1
http://onsemi.com
1P M G
G
1
6
MBT2222ADW1T1G SOT363
(PbFree)
3000 /
Tape & Reel
1P = Specific Device Code
M = Date Code
G= PbFree Package
(Note: Microdot may be in either location)
NSVBT2222ADW1T1G SOT363
(PbFree)
3000 /
Tape & Reel
MBT2222ADW1, NSVBT2222ADW1
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (IC = 10 mAdc, IB = 0) V(BR)CEO 40 Vdc
CollectorBase Breakdown Voltage (IC = 10 mAdc, IE = 0) V(BR)CBO 75 Vdc
EmitterBase Breakdown Voltage, (IE = 10 mAdc, IC = 0) V(BR)EBO 6.0 Vdc
Collector Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) ICEX 10 nAdc
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
(VCB = 60 Vdc, IE = 0, TA = 125°C)
ICBO
0.01
10
mAdc
Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) IEBO 100 nAdc
Base Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) IBL 20 nAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 0.1 mAdc, VCE = 10 Vdc)
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc, TA = 55°C)
(IC = 150 mAdc, VCE = 10 Vdc) (Note 2)
(IC = 150 mAdc, VCE = 1.0 Vdc) (Note 2)
(IC = 500 mAdc, VCE = 10 Vdc) (Note 2)
hFE 35
50
75
35
100
50
40
300
CollectorEmitter Saturation Voltage (Note 2)
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
VCE(sat)
0.3
1.0
Vdc
BaseEmitter Saturation Voltage (Note 2)
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
VBE(sat) 0.6
1.2
2.0
Vdc
SMALLSIGNAL CHARACTERISTICS
CurrentGain Bandwidth Product (Note 3)
(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz)
fT300 MHz
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cobo 8.0 pF
Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo 25 pF
Input Impedance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hie 2.0
0.25
8.0
1.25
kW
Voltage Feedback Ratio
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hre
8.0
4.0
X 104
SmallSignal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hfe 50
75
300
375
Output Admittance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hoe 5.0
25
35
200
mmhos
Collector Base Time Constant (IE = 20 mAdc, VCB = 20 Vdc, f = 31.8 MHz) rb, Cc150 ps
Noise Figure (IC = 100 mAdc, VCE = 10 Vdc, RS = 1.0 kW, f = 1.0 kHz) NF 4.0 dB
SWITCHING CHARACTERISTICS
Delay Time (VCC = 30 Vdc, VBE(off) = 0.5 Vdc,
IC = 150 mAdc, IB1 = 15 mAdc)
td10
ns
Rise Time tr25
Storage Time (VCC = 30 Vdc, IC = 150 mAdc,
IB1 = IB2 = 15 mAdc)
ts225
ns
Fall Time tf60
2. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
3. fT is defined as the frequency at which |hfe| extrapolates to unity.
= Scope use am < 4="" n5="" vtman="" shunt="" capacutance="" of="" ms:="" pg,="" connectors="" and="" oscmoscope.="" e="" 1.="" turnron="" time="" figure="" 2.="" turnioff="" time="" http://onsemi.com="" 3="">
MBT2222ADW1, NSVBT2222ADW1
http://onsemi.com
3
Figure 1. TurnOn Time Figure 2. TurnOff Time
SWITCHING TIME EQUIVALENT TEST CIRCUITS
Scope rise time < 4 ns
*Total shunt capacitance of test jig, connectors, and oscilloscope.
+16 V
-2 V < 2 ns
0
1.0 to 100 ms,
DUTY CYCLE 2.0%
1 kW
+30 V
200
CS* < 10 pF
+16 V
-14 V
0
< 20 ns
1.0 to 100 ms,
DUTY CYCLE 2.0%
1 k
+30 V
200
CS* < 10 pF
-4 V
1N914
1000
10
20
30
50
70
100
200
300
500
700
1.0
k
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500 700
IC, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
hFE, DC CURRENT GAINVCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
1.0
0.8
0.6
0.4
0.2
0
0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50
IB, BASE CURRENT (mA)
Figure 4. Collector Saturation Region
TJ = 125°C
TJ = 25°C
25°C
-55°C
IC = 1.0 mA 10 mA 150 mA 500 mA
VCE = 1.0 V
VCE = 10 V
MBT2222ADW1, NSVBT2222ADW1
http://onsemi.com
4
Figure 5. TurnOn Time
IC, COLLECTOR CURRENT (mA)
70
100
200
50
t, TIME (ns)
10 20 70
5.0
1005.0 7.0 30 50 200
10
30
7.0
20
IC/IB = 10
TJ = 25°C
tr @ VCC = 30 V
td @ VEB(off) = 2.0 V
td @ VEB(off) = 0
3.0
2.0
300 500
500
t, TIME (ns)
5.0
7.0
10
20
30
50
70
100
200
300
Figure 6. TurnOff Time
IC, COLLECTOR CURRENT (mA)
10 20 70 1005.0 7.0 30 50 200 300 500
VCC = 30 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
ts = ts - 1/8 tf
tf
Figure 7. Frequency Effects
f, FREQUENCY (kHz)
4.0
6.0
8.0
10
2.0
0.1
Figure 8. Source Resistance Effects
RS, SOURCE RESISTANCE (OHMS)
NF, NOISE FIGURE (dB)
1.0 2.0 5.0 10 20 500.2 0.5
0
100
NF, NOISE FIGURE (dB)
0.01 0.02 0.05
RS = OPTIMUM
RS = SOURCE
RS = RESISTANCE
IC = 1.0 mA, RS = 150 W
500 mA, RS = 200 W
100 mA, RS = 2.0 kW
50 mA, RS = 4.0 kW
f = 1.0 kHz
IC = 50 mA
100 mA
500 mA
1.0 mA
4.0
6.0
8.0
10
2.0
0
50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k
Figure 9. Capacitances
REVERSE VOLTAGE (VOLTS)
3.0
5.0
7.0
10
2.00.1
CAPACITANCE (pF)
1.0 2.0 3.0 5.0 7.0 10 20 30 500.2 0.3 0.5 0.7
Ccb
20
30
Ceb
Figure 10. CurrentGain Bandwidth Product
IC, COLLECTOR CURRENT (mA)
70
100
200
300
50
500
fT, CURRENT-GAIN BANDWIDTH PRODUCT (MHz)
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
VCE = 20 V
TJ = 25°C
MBT2222ADW1, NSVBT2222ADW1
http://onsemi.com
5
Figure 11. “On” Voltages
IC, COLLECTOR CURRENT (mA)
0.4
0.6
0.8
1.0
0.2
V, VOLTAGE (VOLTS)
0
TJ = 25°C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE(on) @ VCE = 10 V
Figure 12. Temperature Coefficients
IC, COLLECTOR CURRENT (mA)
-0.5
0
+0.5
COEFFICIENT (mV/ C)
-1.0
-1.5
-2.5
°
RqVC for VCE(sat)
RqVB for VBE
0.1 1.0 2.0 5.0 10 20 500.2 0.5 100 200 500 1.0 k
1.0 V
-2.0
0.1 1.0 2.0 5.0 10 20 500.2 0.5 100 200 500
IE5 DIMEN I994 CONIROLUNG DIMENsIoN MILL IE i L Dr I PROTRUSIONS OR GATE BURR sIoNs 0R GATE swans SHAL DIMENSIONS D AND EI AT IH THE PLASTIC aoDv AND DA DATuMs A AND a ARE DET DE DIMENSIONS D AND c APP LEAD BETWEEN n as AND O" 12 a DIMENSIONDDOESNOT 2X 0 “a C EXCESS OF D‘MENS‘ON Emma 33 EH F L = TOPVIEW m, 3 3.3 33.3 7A 5 a so c in'L 7 ’ A EU? I gmm‘v 1 SIDE VIEW m": RE SOLDER 3X30 a‘ ’e L PEP: MD73 065% Fr PITCH “Fol aaaIIionaI inIoImaIion detai‘s. pIease download MounlIngTechmques Re m. 53.3.33...3.3.3.3 ,I 33.3.3 .3333... .33333..3.3.3.33.33.3.3... m .33 .33. .3 33.3 .33.... w... .3. 3.. 33.3.3. 33.3.3.3. 3333 so. w...w...m.3.3.3333.3. 3.33333... 3.33.33...“ 3... 3.3.3. 3333.”.33 3 3333.3 some 3333 .3. 3...... 3. .. 3.3.333 3.3.333 I... 33.3.3. m3 .3... 3.333. 3 3.33.3. 3.3.. 33.3... 33...... 3.3 .3... some 3.3 .3. . .33... 3.3... 3.. 3.. 3.33... 3. 3.33 333.33.. 3333.333 33 333.3. 3. m 3.3. “I... 3. m3...
MBT2222ADW1, NSVBT2222ADW1
http://onsemi.com
6
PACKAGE DIMENSIONS
SC88/SC706/SOT363
CASE 419B02
ISSUE Y
STYLE 1:
PIN 1. EMITTER 2
2. BASE 2
3. COLLECTOR 1
4. EMITTER 1
5. BASE 1
6. COLLECTOR 2
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M,
1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRU-
SIONS, OR GATE BURRS SHALL NOT EXCEED 0.20 PER END.
4. DIMENSIONS D AND E1 AT THE OUTERMOST EXTREMES OF
THE PLASTIC BODY AND DATUM H.
5. DATUMS A AND B ARE DETERMINED AT DATUM H.
6. DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THE
LEAD BETWEEN 0.08 AND 0.15 FROM THE TIP.
7. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION.
ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN
EXCESS OF DIMENSION b AT MAXIMUM MATERIAL CONDI-
TION. THE DAMBAR CANNOT BE LOCATED ON THE LOWER
RADIUS OF THE FOOT.
Cddd M
123
A1
A
c
654
E
b6X DIM MIN NOM MAX
MILLIMETERS
A−−− −−− 1.10
A1 0.00 −−− 0.10
ddd
b0.15 0.20 0.25
C0.08 0.15 0.22
D1.80 2.00 2.20
−−− −−− 0.043
0.000 −−− 0.004
0.006 0.008 0.010
0.003 0.006 0.009
0.070 0.078 0.086
MIN NOM MAX
INCHES
0.10 0.004
E1 1.15 1.25 1.35
e0.65 BSC
L0.26 0.36 0.46
2.00 2.10 2.20
0.045 0.049 0.053
0.026 BSC
0.010 0.014 0.018
0.078 0.082 0.086
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
0.65
0.66
6X
DIMENSIONS: MILLIMETERS
0.30
PITCH
2.50
6X
RECOMMENDED
TOP VIEW
SIDE VIEW END VIEW
bbb H
B
SEATING
PLANE
DETAIL A E
A2 0.70 0.90 1.00 0.027 0.035 0.039
L2 0.15 BSC 0.006 BSC
aaa 0.15 0.006
bbb 0.30 0.012
ccc 0.10 0.004
A-B D
aaa C
2X 3 TIPS
D
E1
D
e
A
2X
aaa H D
2X
D
L
PLANE
DETAIL A
H
GAGE
L2
C
ccc C
A2
6X
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