BZx79-B12143 Datasheet by Nexperia USA Inc.

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DATA SHEET
Product data sheet
Supersedes data of 1999 May 25
2002 Feb 27
DISCRETE SEMICONDUCTORS
BZX79 series
Voltage regulator diodes
M3D17
6
© :ZDZZ. 4e
2002 Feb 27 2
NXP Semiconductors Product data sheet
Voltage regulator diodes BZX79 series
FEATURES
Total power dissipation: max. 500 mW
Two tolerance series: ±2%, and approx. ±5%
Working voltage range: nom. 2.4 to 75 V (E24 range)
Non-repetitive peak reverse power dissipation:
max. 40 W.
APPLICATIONS
Low voltage stabilizers or voltage references.
DESCRIPTION
Low-power voltage regulator diodes in hermetically sealed
leaded glass SOD27 (DO-35) packages. The diodes are
available in the normalized E24 ±2% (BZX79-B) and
approx. ±5% (BZX79-C) tolerance range. The series
consists of 37 types with nominal working voltages from
2.4 to 75 V.
Fig.1 Simplified outline (SOD27; DO-35) and
symbol.
The diodes are type branded.
handbook, halfpage
MAM239
ka
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Device mounted on a printed circuit-board without metallization pad; lead length max.
2. Tie-point temperature 50 °C; max. lead length 8 mm.
ELECTRICAL CHARACTERISTICS
Total BZX79-B and BZX79-C series
Tj = 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
IFcontinuous forward current 250 mA
IZSM non-repetitive peak reverse current tp = 100 μs; square wave;
Tj = 25 °C prior to surge see Tables 1 and 2 A
Ptot total power dissipation Tamb = 50 °C; note 1 400 mW
Tamb = 50 °C; note 2 500 mW
PZSM non-repetitive peak reverse power
dissipation tp = 100 μs; square wave;
Tj = 25 °C prior to surge; see Fig.3 40 W
Tstg storage temperature 65 +200 °C
Tjjunction temperature 65 +200 °C
SYMBOL PARAMETER CONDITIONS MAX. UNIT
VFforward voltage IF = 10 mA; see Fig.4 0.9 V
2002 Feb 27 3
NXP Semiconductors Product data sheet
Voltage regulator diodes BZX79 series
IRreverse current
BZX79-B/C2V4 VR = 1 V 50 μA
BZX79-B/C2V7 VR = 1 V 20 μA
BZX79-B/C3V0 VR = 1 V 10 μA
BZX79-B/C3V3 VR = 1 V 5 μA
BZX79-B/C3V6 VR = 1 V 5 μA
BZX79-B/C3V9 VR = 1 V 3 μA
BZX79-B/C4V3 VR = 1 V 3 μA
BZX79-B/C4V7 VR = 2 V 3 μA
BZX79-B/C5V1 VR = 2 V 2 μA
BZX79-B/C5V6 VR = 2 V 1 μA
BZX79-B/C6V2 VR = 4 V 3 μA
BZX79-B/C6V8 VR = 4 V 2 μA
BZX79-B/C7V5 VR = 5 V 1 μA
BZX79-B/C8V2 VR = 5 V 700 nA
BZX79-B/C9V1 VR = 6 V 500 nA
BZX79-B/C10 VR = 7 V 200 nA
BZX79-B/C11 VR = 8 V 100 nA
BZX79-B/C12 VR = 8 V 100 nA
BZX79-B/C13 VR = 8 V 100 nA
BZX79-B/C15 to BZX79-B/C75 VR = 0.7VZnom 50 nA
SYMBOL PARAMETER CONDITIONS MAX. UNIT
2002 Feb 27 4
NXP Semiconductors Product data sheet
Voltage regulator diodes BZX79 series
Table 1 Per type, BZX79-B/C2V4 to BZX79-B/C24
Tj = 25 °C unless otherwise specified.
BZX79-
Bxxx
Cxxx
WORKING VOLTAGE
VZ (V)
at IZtest = 5 mA
DIFFERENTIAL RESISTANCE
rdif (Ω)TEMP. COEFF.
SZ (mV/K)
at IZtest = 5 mA
(see Figs 5 and 6)
DIODE CAP.
Cd (pF)
at f = 1 MHz;
VR = 0 V
NON-REPETITIVE PEAK
REVERSE CURRENT
IZSM (A)
at tp = 100 μs; Tamb = 25 °C
Tol. ±2% (B) Tol. approx.
±5% (C) at IZtest = 1 mA at IZtest = 5 mA
MIN. MAX. MIN. MAX. TYP. MAX. TYP. MAX. MIN. TYP. MAX. MAX. MAX.
2V4 2.35 2.45 2.2 2.6 275 600 70 100 3.5 1.6 0450 6.0
2V7 2.65 2.75 2.5 2.9 300 600 75 100 3.5 2.0 0450 6.0
3V0 2.94 3.06 2.8 3.2 325 600 80 95 3.5 2.1 0450 6.0
3V3 3.23 3.37 3.1 3.5 350 600 85 95 3.5 2.4 0450 6.0
3V6 3.53 3.67 3.4 3.8 375 600 85 90 3.5 2.4 0450 6.0
3V9 3.82 3.98 3.7 4.1 400 600 85 90 3.5 2.5 0450 6.0
4V3 4.21 4.39 4.0 4.6 410 600 80 90 3.5 2.5 0450 6.0
4V7 4.61 4.79 4.4 5.0 425 500 50 80 3.5 1.4 0.2 300 6.0
5V1 5.00 5.20 4.8 5.4 400 480 40 60 2.7 0.8 1.2 300 6.0
5V6 5.49 5.71 5.2 6.0 80 400 15 40 2.0 1.2 2.5 300 6.0
6V2 6.08 6.32 5.8 6.6 40 150 610 0.4 2.3 3.7 200 6.0
6V8 6.66 6.94 6.4 7.2 30 80 615 1.2 3.0 4.5 200 6.0
7V5 7.35 7.65 7.0 7.9 30 80 615 2.5 4.0 5.3 150 4.0
8V2 8.04 8.36 7.7 8.7 40 80 615 3.2 4.6 6.2 150 4.0
9V1 8.92 9.28 8.5 9.6 40 100 615 3.8 5.5 7.0 150 3.0
10 9.80 10.20 9.4 10.6 50 150 820 4.5 6.4 8.0 90 3.0
11 10.80 11.20 10.4 11.6 50 150 10 20 5.4 7.4 9.0 85 2.5
12 11.80 12.20 11.4 12.7 50 150 10 25 6.0 8.4 10.0 85 2.5
13 12.70 13.30 12.4 14.1 50 170 10 30 7.0 9.4 11.0 80 2.5
15 14.70 15.30 13.8 15.6 50 200 10 30 9.2 11.4 13.0 75 2.0
16 15.70 16.30 15.3 17.1 50 200 10 40 10.4 12.4 14.0 75 1.5
18 17.60 18.40 16.8 19.1 50 225 10 45 12.4 14.4 16.0 70 1.5
20 19.60 20.40 18.8 21.2 60 225 15 55 12.3 15.6 18.0 60 1.5
22 21.60 22.40 20.8 23.3 60 250 20 55 14.1 17.6 20.0 60 1.25
24 23.50 24.50 22.8 25.6 60 250 25 70 15.9 19.6 22.0 55 1.25
2002 Feb 27 5
NXP Semiconductors Product data sheet
Voltage regulator diodes BZX79 series
Table 2 Per type, BZX79-B/C27 to BZX79-B/C75
Tj = 25 °C unless otherwise specified.
BZX79-
Bxxx
Cxxx
WORKING VOLTAGE
VZ (V)
at IZtest = 2 mA
DIFFERENTIAL RESISTANCE
rdif (Ω)TEMP. COEFF.
SZ (mV/K)
at IZtest = 2 mA
(see Figs 5 and 6)
DIODE CAP.
Cd (pF)
at f = 1 MHz;
VR = 0 V
NON-REPETITIVE PEAK
REVERSE CURRENT
IZSM (A)
at tp = 100 μs; Tamb = 25 °C
Tol. ±2% (B) Tol. approx.
±5% (C) at IZtest = 0.5 mA at IZtest = 2 mA
MIN. MAX. MIN. MAX. TYP. MAX. TYP. MAX. MIN. TYP. MAX. MAX. MAX.
27 26.50 27.50 25.1 28.9 65 300 25 80 18.0 22.7 25.3 50 1.0
30 29.40 30.60 28.0 32.0 70 300 30 80 20.6 25.7 29.4 50 1.0
33 32.30 33.70 31.0 35.0 75 325 35 80 23.3 28.7 33.4 45 0.9
36 35.30 36.70 34.0 38.0 80 350 35 90 26.0 31.8 37.4 45 0.8
39 38.20 39.80 37.0 41.0 80 350 40 130 28.7 34.8 41.2 45 0.7
43 42.10 43.90 40.0 46.0 85 375 45 150 31.4 38.8 46.6 40 0.6
47 46.10 47.90 44.0 50.0 85 375 50 170 35.0 42.9 51.8 40 0.5
51 50.00 52.00 48.0 54.0 90 400 60 180 38.6 46.9 57.2 40 0.4
56 54.90 57.10 52.0 60.0 100 425 70 200 42.2 52.0 63.8 40 0.3
62 60.80 63.20 58.0 66.0 120 450 80 215 58.8 64.4 71.6 35 0.3
68 66.60 69.40 64.0 72.0 150 475 90 240 65.6 71.7 79.8 35 0.25
75 73.50 76.50 70.0 79.0 170 500 95 255 73.4 80.2 88.6 35 0.2
2002 Feb 27 6
NXP Semiconductors Product data sheet
Voltage regulator diodes BZX79 series
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed circuit-board without metallization pad.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-tp thermal resistance from junction to tie-point lead length 8 mm. 300 K/W
Rth j-a thermal resistance from junction to ambient lead length max.; see Fig.2 and note 1 380 K/W
GRAPHICAL DATA
handbook, full pagewidth
10
1
11010
2
10
3
10
4
10
5
MBG930
10
2
10
1
10
3
tp (ms)
tptp
TT
δ
=
0.02
0.01
0.001
0.75
0.50
0.33
0.20
0.10
0.05
δ = 1
Rth j-a
(K/W)
Fig.2 Thermal resistance from junction to ambient as a function of pulse duration.
2002 Feb 27 7
NXP Semiconductors Product data sheet
Voltage regulator diodes BZX79 series
Fig.3 Maximum permissible non-repetitive peak
reverse power dissipation versus duration.
handbook, halfpage
MBG801
103
1 duration (ms)
PZSM
(W)
10
102
101
10
1
(1)
(2)
(1) Tj = 25 °C (prior to surge).
(2) Tj = 150 °C (prior to surge).
Fig.4 Typical forward current as a function of
forward voltage.
handbook, halfpage
0.6 1
300
100
0
200
MBG781
0.8 VF (V)
IF
(mA)
Tj = 25 °C.
Fig.5 Temperature coefficient as a function of
working current; typical values.
handbook, halfpage
060
0
2
3
1
MBG783
20 40 IZ (mA)
SZ
(mV/K) 4V3
3V9
3V6
3V0
2V4
2V7
3V3
BZX79-B/C2V4 to BZX79-B/C4V3.
Tj = 25 to 150 °C.
Fig.6 Temperature coefficient as a function of
working current; typical values.
handbook, halfpage
02016
10
0
5
5
MBG782
4812 IZ (mA)
SZ
(mV/K)
4V7
12
11
10
9V1
8V2
7V5
6V8 6V2
5V6
5V1
BZX79-B/C4V7 to BZX79-B/C12.
Tj = 25 to 150 °C.
‘ ‘ + ‘ 9+ L DIMENSIONS (mm mm original mmensuonsp h D 61 L UN” max. max. max. mm. mm o 55 1 35 A 25 25 4 ane ‘ The mamng band mdlcates \he calhnde OUTLINE REFERENCES VERSION IEC JEDEC EIAJ 50027 A24 00735 5040 a Q 2002 Feb 27
2002 Feb 27 8
NXP Semiconductors Product data sheet
Voltage regulator diodes BZX79 series
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
Note
1. The marking band indicates the cathode.
SOD27 DO-35A24 SC-40 97-06-09
UNIT b
max.
mm 0.56
D
max.
G1
max.
25.44.251.85
L
min.
DIMENSIONS (mm are the original dimensions)
G1
LD L
b
(1)
0 1 2 mm
scale
2002 Feb 27 9
NXP Semiconductors Product data sheet
Voltage regulator diodes BZX79 series
DATA SHEET STATUS
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for product
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the product specification.
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Printed in The Netherlands 613514/03/pp10 Date of release: 2002 Feb 27 Document order number: 9397 750 09387

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