SI4946BEY Datasheet by Vishay Siliconix

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Vishay Siliconix
Si4946BEY
Document Number: 73411
S09-2434-Rev. C, 16-Nov-09
www.vishay.com
1
Dual N-Channel 60-V (D-S) 175 °C MOSFET
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
TrenchFET® Power MOSFET
175 °C Maximum Junction Temperature
100 % Rg Tested
Compliant to RoHS directive 2002/95/EC
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω)I
D (A) Qg (Typ.)
60 0.041 at VGS = 10 V 6.5 9.2 nC
0.052 at VGS = 4.5 V 5.8
S1D1
G1D1
S2D2
G2D2
SO-8
5
6
7
8
Top View
2
3
4
1
Ordering Information: Si4946BEY-T1-E3 (Lead (Pb)-free)
Si4946BEY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET
G1
D1
S1
N-Channel MOSFET
G2
D2
S2
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
d. Maximum under Steady State conditions is 110 °C/W.
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 60 V
Gate-Source Voltage VGS ± 20
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
ID
6.5
A
TC = 70 °C 5.5
TA = 25 °C 5.3a, b
TA = 70 °C 4.4a, b
Pulsed Drain Current IDM 30
Continuous Source Drain Diode Current
TC = 25 °C IS
3.1
TA = 25 °C 2a, b
Avalanche Current L = 0 1 mH IAS 12
Single-Pulse Avalanche Energy EAS 7.2 mJ
Maximum Power Dissipation
TC = 25 °C
PD
3.7
W
TC = 70 °C 2.6
TA = 25 °C 2.4a, b
TA = 70 °C 1.7a, b
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 175 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambienta, c t 10 s RthJA 50 62.5 °C/W
Maximum Junction-to-Foot (Drain) Steady State RthJF 33 41
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Document Number: 73411
S09-2434-Rev. C, 16-Nov-09
Vishay Siliconix
Si4946BEY
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 60 V
VDS Temperature Coefficient ΔVDS/TJ ID = 250 µA 53 mV/°C
VGS(th) Temperature Coefficient ΔVGS(th)/TJ - 6.7
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 1.0 2.4 3.0 V
Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA
Zero Gate Voltage Drain Current IDSS
VDS = 60 V, VGS = 0 V 1µA
VDS = 60 V, VGS = 0 V, TJ = 55 °C 10
On-State Drain CurrentaID(on) V
DS 5 V, VGS = 10 V 30 A
Drain-Source On-State ResistanceaRDS(on)
VGS = 10 V, ID = 5.3 A 0.033 0.041 Ω
VGS = 4.5 V, ID = 4.7 A 0.041 0.052
Forward Transconductanceagfs VDS = 15 V, ID = 5.3 A 24 S
Dynamicb
Input Capacitance Ciss
VDS = 30 V, VGS = 0 V, f = 1 MHz
840
pFOutput Capacitance Coss 71
Reverse Transfer Capacitance Crss 44
Total Gate Charge Qg
VDS = 30 V, VGS = 10 V, ID = 5.3 A 17 25
nC
VDS = 30 V, VGS = 5 V, ID = 5.3 A
9.2 12
Gate-Source Charge Qgs 3.3
Gate-Drain Charge Qgd 3.7
Gate Resistance Rgf = 1 MHz 3.1 6.5 9.5 Ω
Tur n - O n D e l ay Time td(on)
VDD = 30 V, RL = 6.8 Ω
ID 4.4 A, VGEN = 4.5 V, Rg = 1 Ω
20 30
ns
Rise Time tr120 180
Turn-Off Delay Time td(off) 20 30
Fall Time tf30 45
Tur n - O n D e l ay Time td(on)
VDD = 30 V, RL = 6.8 Ω
ID 4.4 A, VGEN = 10 V, Rg = 1 Ω
10 15
Rise Time tr12 20
Turn-Off Delay Time td(off) 25 40
Fall Time tf10 15
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current ISTC = 25 °C 3.1 A
Pulse Diode Forward CurrentaISM 30
Body Diode Voltage VSD IS = 2 A 0.8 1.2 V
Body Diode Reverse Recovery Time trr
IF = 4.4 A, dI/dt = 100 A/µs, TJ = 25 °C
25 50 ns
Body Diode Reverse Recovery Charge Qrr 25 50 nC
Reverse Recovery Fall Time ta18 ns
Reverse Recovery Rise Time tb7
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Document Number: 73411
S09-2434-Rev. C, 16-Nov-09
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Vishay Siliconix
Si4946BEY
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
Gate Charge
0
5
10
15
20
25
30
0.0 0.5 1.0 1.5 2.0 2.5 3.0
V
GS
= 10 V thru 5 V
4 V
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
3 V
0.000
0.020
0.040
0.060
0.080
0.100
0 5 10 15 20 25 30
VGS = 10 V
ID
- Drain Current (A)
VGS = 4.5 V
RDS(on) - On-Resistance (mΩ)
0
2
4
6
8
10
0 4 8 12 16 20
ID = 5.3 A
- Gate-to-Source Voltage (V)
Qg - Total Gate Charge (nC)
VGS
VDS = 48 V
VDS = 30 V
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
2
4
6
8
10
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
25 °C
TC = 150 °C
- 55 °C
VGS
- Gate-to-Source Voltage (V)
- Drain Current (A)ID
0
200
400
600
800
1000
1200
0 102030405060
Crss
Coss
Ciss
VDS - Drain-to-Source Voltage (V)
C - Capacitance (pF)
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
- 50 - 25 0 25 50 75 100 125 150 175
VGS = 10 V
TJ - Junction Temperature (°C)
RDS(on) - On-Resistance
(Normalized)
VGS = 4.5 V
ID = 5.3 A
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Document Number: 73411
S09-2434-Rev. C, 16-Nov-09
Vishay Siliconix
Si4946BEY
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
1.0 1.4
1
10
30
0 0.2 0.4 0.6 0.8
TJ = 175 °C
VSD
- Source-to-Drain Voltage (V)
- Source Current (A)IS
1.2
TJ = 25 °C
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
- 50 - 25 0 25 50 75 100 125 150 175
ID = 250 µA
TJ - Temperature (°C)
VGS(th) (V)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.00
0.02
0.04
0.06
0.08
0.10
0246810
ID = 5.3 A
VGS - Gate-to-Source Voltage (V)
RDS(on) - Drain-to-Source On-Resistance (Ω)
TJ = 25 °C
TJ = 150 °C
0
15
25
5
10
Power (W)
Time (s)
20
10 100010.10.01 100
Safe Operating Area, Junction-to-Ambient
100
1
0.01 1 10 100
0.01
10
- Drain Current (A)ID
0.1
0.1
1 ms
10 ms
100 ms
Limited by RDS(on)*
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
TA = 25 °C
Single Pulse
100 µs
DC
10 s
1 s
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Document Number: 73411
S09-2434-Rev. C, 16-Nov-09
www.vishay.com
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Vishay Siliconix
Si4946BEY
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation PD is based on TJ(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
1
2
3
4
5
6
7
8
0 25 50 75 100 125 150 175
ID
- Drain Current (A)
TC - Case Temperature (°C)
Power, Junction-to-Case
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
25 50 75 100 125 150 175
TC - Case Temperature (°C)
Power (W)
Single Pulse Avalanche Capability
100
0.000001 0.001
1
10
0.0001
TA - Time In Avalanche (s)
IC - Peak Avalanche Current (A)
T
A
= I
D
BV - V
DD
0.00001
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Document Number: 73411
S09-2434-Rev. C, 16-Nov-09
Vishay Siliconix
Si4946BEY
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73411.
Normalized Thermal Transient Impedance, Junction-to-Ambient
10-3 10-2 1 10 60010-1
10-4 100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = RthJA = 85 °C/W
3. T JM - TA = PDMZthJA(t)
t1
t2
t1
t2
Notes:
4. Surface Mounted
PDM
Normalized Thermal Transient Impedance, Junction-to-Case
10-3 10-2 110-1
10-4
2
1
0.1
0.01
0.2
0.1
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
0.02
0.05 Single Pulse
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Vishay Siliconix
Package Information
Document Number: 71192
11-Sep-06
www.vishay.com
1
DIM
MILLIMETERS INCHES
Min Max Min Max
A 1.35 1.75 0.053 0.069
A10.10 0.20 0.004 0.008
B 0.35 0.51 0.014 0.020
C 0.19 0.25 0.0075 0.010
D 4.80 5.00 0.189 0.196
E 3.80 4.00 0.150 0.157
e 1.27 BSC 0.050 BSC
H 5.80 6.20 0.228 0.244
h 0.25 0.50 0.010 0.020
L 0.50 0.93 0.020 0.037
q0°8°0°8°
S 0.44 0.64 0.018 0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
4
3
12
5
6
87
HE
h x 45
C
All Leads
q0.101 mm
0.004"
L
BA
1
A
e
D
0.25 mm (Gage Plane)
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
S
Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR 50-8 0172 (A 359} n 246 (a 248) Recommended Mwmmum Pads Dwmensmns m Inches/(mm) VISHAY» Docmem Number 72606 Re w 2‘ rJaurOB
Application Note 826
Vishay Siliconix
www.vishay.com Document Number: 72606
22 Revision: 21-Jan-08
APPLICATION NOTE
RECOMMENDED MINIMUM PADS FOR SO-8
0.246
(6.248)
Recommended Minimum Pads
Dimensions in Inches/(mm)
0.172
(4.369)
0.152
(3.861)
0.047
(1.194)
0.028
(0.711)
0.050
(1.270)
0.022
(0.559)
Return to Index
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Revision: 08-Feb-17 1Document Number: 91000
Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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