STx1NK80ZR(R-AP,-1) Datasheet by STMicroelectronics

View All Related Products | Download PDF Datasheet
3&2
1/15January 2006
STQ1NK80ZR-AP - STN1NK80Z
STD1NK80Z - STD1NK80Z-1
N-CHANNEL 800V - 13 - 1 A TO-92 /SOT-223/DPAK/IPAK
Zener - Protected SuperMESH™ MOSFET
Table 1: General Features
TYPICAL RDS(on) = 13
EXTREMELY HIGH dv/dt CAPABILITY
ESD IMPROVED CAPABILITY
100% AVALANCHE TESTED
NEW HIGH VOLTAGE BENCHMARK
GATE CHARGE MINIMIZED
DESCRIPTION
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt capability
for the most demanding applications. Such series
complements ST full range of high voltage MOS-
FETs including revolutionary MDmesh™ products.
APPLICATIONS
AC ADAPTORS AND BATTERY CHARGERS
SWITH MODE POWER SUPPLIES (SMPS)
Table 2: Order Codes
Figure 1: Package
Figure 2: Internal Schematic Diagram
TYPE VDSS RDS(on) IDPw
STQ1NK80ZR-AP
STN1NK80Z
STD1NK80Z
STD1NK80Z-1
800 V
800 V
800 V
800 V
< 16
< 16
< 16
< 16
0.3 A
0.25A
1.0 A
1.0 A
3 W
2.5 W
45 W
45 W
TO-92 (Ammopack)
1
2
2
3
SOT-223
1
3
DPAK
3
2
1
IPAK
SALES TYPE MARKING PACKAGE PACKAGING
STQ1NK80ZR-AP Q1NK80ZR TO-92 AMMOPAK
STN1NK80Z N1NK80Z SOT-223 TAPE & REEL
STD1NK80ZT4 D1NK80Z DPAK TAPE & REEL
STD1NK80Z-1 D1NK80Z IPAK TUBE
Rev. 3
STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1
2/15
Table 3: Absolute Maximum ratings
() Pulse width limited by safe operating area
(1) ISD 1 A, di/dt 200 A/µs, VDD 640
Table 4: Thermal Data
(#) When mounted on 1inch² FR-4 BOARD, 2 oz Cu
Table 5: Avalanche Characteristics
Table 6: GATE-SOURCE ZENER DIODE
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
Symbol Parameter Value Unit
TO-92 SOT-223 DPAK/IPAK
VDS Drain-source Voltage (VGS = 0) 800 V
VDGR Drain-gate Voltage (RGS = 20 k)800 V
VGS Gate- source Voltage ± 30 V
IDDrain Current (continuous) at TC = 25°C 0.3 0.25 1.0 A
IDDrain Current (continuous) at TC = 100°C 0.19 0.16 0.63 A
IDM ( ) Drain Current (pulsed) 5 A
PTOT Total Dissipation at TC = 25°C 32.5 45 W
Derating Factor 0.025 0.02 0.36 W /°C
VESD(G-S) Gate source ESD (HBM-C= 100pF, R= 1.5KΩ) 1000 V
dv/dt (1) Peak Diode Recovery voltage slope 4.5 V/ns
Tj
Tstg
Operating Junction Temperature
Storage Temperature -55 to 150 °C
TO-92 SOT-223 DPAK/IPAK Unit
Rthj-case Thermal Resistance Junction-case Max -- -- 2.78 °C/W
Rthj-amb(#) Thermal Resistance Junction-ambient Max 120 50 100 °C/W
Rthj-lead Thermal Resistance Junction-lead Max 40 -- -- °C/W
TlMaximum Lead Temperature For Soldering
Purpose 260 -- 300 °C
Symbol Parameter Max Value Unit
IAR Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max) 1 A
EAS Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V) 50 mJ
Symbol Parameter Test Conditions Min. Typ. Max. Unit
BVGSO Gate-Source Breakdown
Voltage Igs=± 1mA (Open
Drain) 30 V
3/15
STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 7: On/Off
Table 8: Dynamic
Table 9: Source Drain Diode
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%
VDSS
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V(BR)DSS Drain-source
Breakdown Voltage ID = 1 mA, VGS = 0 800 V
IDSS Zero Gate Voltage
Drain Current (VGS = 0) VDS = Max Rating
VDS = Max Rating, TC = 125 °C 1
50 µA
µA
IGSS Gate-body Leakage
Current (VDS = 0) VGS = ± 20V ±10 µA
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 50 µA 33.75 4.5 V
RDS(on) Static Drain-source On
Resistance VGS = 10V, ID = 0.5 A 13 16
Symbol Parameter Test Conditions Min. Typ. Max. Unit
gfs (1) Forward Transconductance VDS = 15 V, ID = 0.5 A 0.8 S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25 V, f = 1 MHz, VGS = 0 160
26
6.7
pF
pF
pF
Coss eq. (3) Equivalent Output
Capacitance VGS = 0V, VDS = 0V to 640V 9.5 pF
td(on)
tr
td(off)
tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
VDD = 400 V, ID = 0.5 A
RG = 4.7 VGS = 10 V
(see Figure 21)
8
30
22
55
ns
ns
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 640V, ID = 1.0 A,
VGS = 10V
(see Figure 24)
7.7
1.4
4.5
nC
nC
nC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ISD
ISDM (2) Source-drain Current
Source-drain Current (pulsed)
1.0
5A
A
VSD (1) Forward On Voltage ISD = 1.0 A, VGS = 0 1.6 V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 1.0 A, di/dt = 100 A/µs
VDD = 50 V, Tj = 25°C
(see Figure 22)
365
802
4.4
ns
nC
A
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 1.0 A, di/dt = 100 A/µs
VDD = 50 V, Tj = 150°C
(see Figure 22)
388
802.7
4.6
ns
nC
A
wzssuu K msmrw SNGLE PULSE n: n'c Yc=2§'c SVngh puls- HT! 7A.. x”. 2m. 1A.. ‘04 10“ to‘ 101 IoinsM ms «7" w} w“ ur‘ In“ m‘ms) HV259|0 - 5m: m" u. a u. 10"} 1o“ 10‘ ”'10? “‘mxvnsm W5 w «a w w' w w W wzssm buuw In“) mp: 107. was .1 V 10 - to" ‘ oz 10" lo" 1n’3 10” 10"“(5)
STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1
4/15
Figure 3: Safe Operating Area for SOT-223
Figure 4: Safe Operating Area for TO-92
Figure 5: Safe Operating Area for IPAK-DPAK
Figure 6: Thermal Impedance for SOT-223
Figure 7: Thermal Impedance for TO-92
Figure 8: Thermal Impedance for DPAK-IPAK
w) 1.5 1.2 0.9 0.6 0.3 96(5) 1.2 1.0 0.5 0.5 0.4 5 0.2 10 0.4 15 Hvzssw 9 EV 5 20 25 so mm) 0.6 0.8 a 1 Hvzsgao .u |n(A) manual: 10 uufnc) Hvzsms ln(A) 1.2 0.9 0.6 0.3 o 2 4 s 8 Ves(V) Hvzsaao Rnsmx (n) 15 1A 13 12 I1 0 0.3 0,5 0.9 1.21““) mm: C(PF) Mm sun 200 me C... 0 ID 20 50 A0 Vnsm
5/15
STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1
Figure 9: Output Characteristics
Figure 10: Transconductance
Figure 11: Gate Charge vs Gate-source Voltage
Figure 12: Transfer Characteristics
Figure 13: Static Drain-source On Resistance
Figure 14: Capacitance Variations
mm a thm (mm 1.2 0.8 0.6 0.4 —50 0 50 100 150mm wzsm V30 (v) 1.0 0.5 0.7 0.5 0.5 u 0.2 0.A 0.5 0.5 1.0mm) Hv25530 {now 50 30 20 10 o 15 50 75 100 ‘ZSTA‘D mam Rmmm (mm 2.5 2.0 L5 1.0 0.5 750 0 50 100 156mm mam Bme (v) (mm m 1.05 to 0.95 0.90 0.55 750 0 50 I00 150nm:
STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1
6/15
Figure 15: Normalized Gate Thereshold Volt-
age vs Temperature
Figure 16: Source-Drain Diode Forward Char-
acteristics
Figure 17: Avalanche Energy vs Starting Tj
Figure 18: Normalized On Resistance vs Tem-
perature
Figure 19: Normalized BVdss vs Temperature
P D.U.T. 22m) smsm V(BR)DSS Pw i ‘KU 1 scnmm A A ] FAST LI mo H [3 mm. WE :7 M » mm) a a M v 250 m 77“” RG swam
7/15
STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1
Figure 20: Unclamped Inductive Load Test Cir-
cuit
Figure 21: Switching Times Test Circuit For
Resistive Load
Figure 22: Test Circuit For Inductive Load
Switching and Diode Recovery Times
Figure 23: Unclamped Inductive Wafeform
Figure 24: Gate Charge Test Circuit
: www.st.com
STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1
8/15
In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These
packages have a Lead-free second level interconnect . The category of second level interconnect is
marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The
maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an
ST trademark. ECOPACK specifications are available at: www.st.com
57 1.8 3.0 15 / 3K 5"“; FuH vaduS \ ii / V 2.5mm mm mm m - _ Access he‘s T a. 5”,. Wm \ ‘ c ‘ v \ l N \‘ t \ , Yaw 5“” G measuveu m m. a M, (spasm mum » mpmsmmve _ Kn .32 . rwmmm T ”mm V0? 2 mm . m a 9, | | / - H 5, Ea ., a“, w m / i a . ~an A“ m 53mm mm: ' ' ‘ , (“My . :1: ”wuwmmwm' TRL b? ooooooooo FEED mascnon n m Eenamg Vadus
9/15
STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1
TAPE AND REEL SHIPMENT
DPAK FOOTPRINT
DIM. mm inch
MIN. MAX. MIN. MAX.
A 330 12.992
B1.5 0.059
C 12.8 13.2 0.504 0.520
D20.2 0.795
G 16.4 18.4 0.645 0.724
N50 1.968
T 22.4 0.881
BASE QTY BULK QTY
2500 2500
REEL MECHANICAL DATA
DIM. mm inch
MIN. MAX. MIN. MAX.
A0 6.8 7 0.267 0.275
B0 10.4 10.6 0.409 0.417
B1 12.1 0.476
D1.5 1.6 0.059 0.063
D1 1.5 0.059
E1.65 1.85 0.065 0.073
F 7.4 7.6 0.291 0.299
K0 2.55 2.75 0.100 0.108
P0 3.9 4.1 0.153 0.161
P1 7.9 8.1 0.311 0.319
P2 1.9 2.1 0.075 0.082
R40 1.574
W 15.7 16.3 0.618 0.641
TAPE MECHANICAL DATA
All dimensions are in millimeters
M4 51» « 4~b 010275276
STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1
10/15
DIM. mm. inch
MIN. TYP MAX. MIN. TYP. MAX.
A 4.32 4.95 0.170 0.194
b 0.36 0.51 0.014 0.020
D 4.45 4.95 0.175 0.194
E 3.30 3.94 0.130 0.155
e 2.41 2.67 0.094 0.105
e1 1.14 1.40 0.044 0.055
L 12.70 15.49 0.50 0.610
R 2.16 2.41 0.085 0.094
S1 0.92 1.52 0.036 0.060
W 0.41 0.56 0.016 0.022
V5° 5°
TO-92 MECHANICAL DATA
11/15
STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 1.80 0.071
B 0.60 0.70 0.80 0.024 0.027 0.031
B1 2.90 3.00 3.10 0.114 0.118 0.122
c 0.24 0.26 0.32 0.009 0.010 0.013
D 6.30 6.50 6.70 0.248 0.256 0.264
e 2.30 0.090
e1 4.60 0.181
E 3.30 3.50 3.70 0.130 0.138 0.146
H 6.70 7.00 7.30 0.264 0.276 0.287
V10
o10o
A1 0.02
P008B
SOT-223 MECHANICAL DATA
02 \ A1 V2 H 0,50 MIN. FLAT ZONE A2
STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1
12/15
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 2.20 2.40 0.087 0.094
A1 0.90 1.10 0.035 0.043
A2 0.03 0.23 0.001 0.009
B 0.64 0.90 0.025 0.035
B2 5.20 5.40 0.204 0.213
C 0.45 0.60 0.018 0.024
C2 0.48 0.60 0.019 0.024
D 6.00 6.20 0.236 0.244
E 6.40 6.60 0.252 0.260
G 4.40 4.60 0.173 0.181
H 9.35 10.10 0.368 0.398
L2 0.8 0.031
L4 0.60 1.00 0.024 0.039
V2 0o8o0o0o
P032P_B
TO-252 (DPAK) MECHANICAL DATA
13/15
STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A3 0.7 1.3 0.027 0.051
B 0.64 0.9 0.025 0.031
B2 5.2 5.4 0.204 0.212
B3 0.85 0.033
B5 0.3 0.012
B6 0.95 0.037
C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023
D 6 6.2 0.236 0.244
E 6.4 6.6 0.252 0.260
G 4.4 4.6 0.173 0.181
H 15.9 16.3 0.626 0.641
L 9 9.4 0.354 0.370
L1 0.8 1.2 0.031 0.047
L2 0.8 1 0.031 0.039
A
C2
C
A3
H
A1
DL
L2
L1
1 3
= =
B3
B
B6
B2
E
G
= =
= =
B5
2
TO-251 (IPAK) MECHANICAL DATA
0068771-E
STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1
14/15
Table 10: Revision History
Date Revision Description of Changes
08-Jun-2005 1First Release
06-Sep-2005 2Inserted Ecopack indication
16-Jan-2006 3Corrected value on Table 3
\ob«a
15/15
STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1
I
nformation furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequence
s
o
f use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
b
y implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subjec
t
t
o change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are no
t
a
uthorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
All other names are the property of their respective owners
© 2006 STMicroelectronics - All Rights Reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -
Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
www.st.com

Products related to this Datasheet

MOSFET N-CH 800V 0.3A TO-92
MOSFET N-CH 800V 0.25A SOT223
MOSFET N-CH 800V 1A DPAK
MOSFET N-CH 800V 1A IPAK
MOSFET N-CH 800V 0.3A TO-92
MOSFET N-CH 800V 1A DPAK
MOSFET N-CH 800V 0.25A SOT223
MOSFET N-CH 800V 0.25A SOT223
MOSFET N-CH 800V 1A DPAK