P6KE Series Datasheet by Taiwan Semiconductor Corporation

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Taiwan Semiconductor 9 UN) ® Pia-Fm;- R6Hs COMPLIANT MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS ORDERING INFORMATION PART NO. PACKING CODE EXAMPLE EXAMPLE PART NO. PACKING CODE
CREAT BY ART
- Excellent clamping capability
- Low dynamic impedance
- 600W surge capability at 10 / 1000 μs waveform
- Typical I
R
less than 1μA above 10V
- Halogen-free according to IEC 61249-2-21
Molding compound: UL flammability classification rating 94V-0
Part No. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Pure tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
SYMBOL
P
PK
T
J
T
STG
Note 2: Mounted on 5 x 5 mm copper pads to each terminal
Note 3: 8.3ms single half sine-wave or equivalent square wave, duty cycle=4 pulses per minute maximum
Devices for Bipolar Applications
1. For bidirectional use C or CA suffix for types P6KE6.8 - types P6KE440
2. Electrical characteristics apply in both directions
PART NO.
PART NO.
Version: M1602
°C
A
Operating junction temperature range
DO-204AC (DO-15)
MECHANICAL DATA
Case: DO-204AC (DO-15)
Note 1: Non-repetitive current pulse per fig. 3 and derated above T
A
=25°C per fig. 2
Steady state power dissipation at T
L
=75°C
lead lengths .375", 9.5mm (Note 2) P
D
5W
Storage temperature range - 55 to +175
P6KE SERIES
Taiwan Semiconductor
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T
A
=25°C unless otherwise noted)
- 55 to +175
FEATURES
- Fast response time: Typically less than
1.0ps from 0 volt to V
BR
for unidirectional
and 5.0ns for bidirectional
- UL recognized file # E-326243
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
°C
600
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load (Note 3) I
FSM
100
600W, 6.8V - 440V Transient Volta
g
e Su
pp
ressor
PARAMETER VALUE
Peak power dissipation at T
A
=25°C, Tp=1ms (Note 1)
UNIT
W
Weight: 0.4g (approximately)
ORDERING INFORMATION
PART NO.
SUFFIX PACKING CODE PACKING CODE
SUFFIX PACKAGE PACKING
A0
G
DO-15 1,500 / Ammo box
R0 DO-15 3,500 / 13" Paper reel
B0 DO-15 1,000 / Bulk packing
Note 1: "xxxx" defines voltage from 6.8V (P6KE6.8) to 440V (P6KE440)
EXAMPLE
EXAMPLE
PART NO.
PART NO.
SUFFIX PACKING CODE PACKING CODE
SUFFIX DESCRIPTION
P6KExxxx
(Note 1) H
AEC-Q101 qualified
Green compound
P6KE56AHA0G P6KE56A H A0 G
s TAIWAN SEMICONDUCTO ' Taiwan Semiconductor
CREAT BY ART
(T
A
=25°C unless otherwise noted)
Version: M1602
P6KE SERIES
Taiwan Semiconductor
RATINGS AND CHARACTERISTICS CURVES
0
25
50
75
100
125
0 25 50 75 100 125 150 175 200
PEAK PULSE POWER(PPP) or CURRENT(IPPM)
DERATING IN PERCENTAGE(%)
TA, AMBIENT TEMPERATURE (°C)
FIG.2 PULSE DERATING CURVE
10
100
1 10 100
IFSM, PEAK FORWARD SURGE CURRENT
(A)
NUMBER OF CYCLES AT 60 Hz
FIG. 4 MAXIMUM NON-REPETITIVE FORWARD SURGE
CURRENT UNIDIRECTIONAL ONLY
8.3ms single half sine wave
0
20
40
60
80
100
120
140
00.511.522.533.54
PEAK PULSE CURRENT (%)
t, TIME ms
FIG. 3 CLAMPING POWER PULSE WAVEFORM
td
Peak value
IPPM
tr=10μs
Half value-IPPM/2
10/1000μs waveform
as defined by R.E.A.
Pulse width(td) is defined
as the point where the peak
current decays to 50% of IPPM
10
100
1000
10000
1 10 100
CJ, JUNCTION CAPACITANCE (pF) A
V(BR), BREAKDOWN VOLTAGE (V)
FIG. 5 TYPICAL JUNCTION CAPACITANCE
f=1.0MHz
Vsig=50mVp-p
VR=0
Measured at
stand-off
voltage,Vwm
0.1
1
10
100
0.1 1 10 100 1000 10000
PPPM, PEAK PULSE POWER, KW
tp, PULSE WIDTH, (μs)
FIG. 1 PEAK PULSE POWER RATING CURVE
Non-repetitive
pulse waveform
shown in fig.3
Taiwan Semiconductor ping Vollag
CREAT BY ART
Test Stand-Off Maximum Maximum Maximum Maximum
Current Voltage Reverse Leakage Peak Surge Clamping Voltag
e
Temperature
@ V
WM
Current @ I
PPM
Coefficient
I
T
V
WM
I
R
I
PPM
Vc of V
BR
(V) (mA) (V) (μA) (A) (V) (%/°C)
Min Max (Note 2)
P6KE6.8 6.8 6.12 7.48 10 5.50 1000 58.0 10.8 0.057
P6KE6.8A 6.8 6.46 7.14 10 5.80 1000 60.0 10.5 0.057
P6KE7.5 7.5 6.75 8.25 10 6.05 500 53.0 11.7 0.061
P6KE7.5A 7.5 7.13 7.88 10 6.40 500 55.0 11.3 0.061
P6KE8.2 8.2 7.38 9.02 10 6.63 200 50.0 12.5 0.065
P6KE8.2A 8.2 7.79 8.61 10 7.02 200 52.0 12.1 0.065
P6KE9.1 9.1 8.19 10.00 1 7.37 50 45.0 13.8 0.068
P6KE9.1A 9.1 8.65 9.55 1 7.78 50 47.0 13.4 0.068
P6KE10 10 9.00 11.00 1 8.10 10 42.0 15.0 0.073
P6KE10A 10 9.50 10.5 1 8.55 10 43.0 14.5 0.073
P6KE11 11 9.90 12.1 1 8.92 1 38.0 16.2 0.075
P6KE11A 11 10.5 11.6 1 9.40 1 40.0 15.6 0.075
P6KE12 12 10.8 13.2 1 9.72 1 36.0 17.3 0.078
P6KE12A 12 11.4 12.6 1 10.2 1 37.0 16.7 0.078
P6KE13 13 11.7 14.3 1 10.5 1 33.0 19.0 0.081
P6KE13A 13 12.4 13.7 1 11.1 1 34.0 18.2 0.081
P6KE15 15 13.5 16.5 1 12.1 1 28.0 22.0 0.084
P6KE15A 15 14.3 15.8 1 12.8 1 29.0 21.2 0.084
P6KE16 16 14.4 17.6 1 12.9 1 26.0 23.5 0.086
P6KE16A 16 15.2 16.8 1 13.6 1 28.0 22.5 0.086
P6KE18 18 16.2 19.8 1 14.5 1 23.0 26.5 0.088
P6KE18A 18 17.1 18.9 1 15.3 1 25.0 25.5 0.088
P6KE20 20 18.0 22.0 1 16.2 1 21.0 29.1 0.090
P6KE20A 20 19.0 21.0 1 17.1 1 22.0 27.7 0.090
P6KE22 22 19.8 24.2 1 17.8 1 19.0 31.9 0.092
P6KE22A 22 20.9 23.1 1 18.8 1 20.0 30.6 0.092
P6KE24 24 21.6 26.4 1 19.4 1 18.0 34.7 0.094
P6KE24A 24 22.8 25.2 1 20.5 1 19.0 33.2 0.094
P6KE27 27 24.3 29.7 1 21.8 1 16.0 39.1 0.096
P6KE27A 27 25.7 28.4 1 23.1 1 16.8 37.5 0.096
P6KE30 30 27.0 33.0 1 24.3 1 14.0 43.5 0.097
P6KE30A 30 28.5 31.5 1 25.6 1 15.0 41.4 0.097
P6KE33 33 29.7 36.3 1 26.8 1 13.0 47.7 0.098
P6KE33A 33 31.4 34.7 1 28.2 1 13.8 45.7 0.098
P6KE36 36 32.4 39.6 1 29.1 1 12.0 52.0 0.099
P6KE36A 36 34.2 37.8 1 30.8 1 12.6 49.9 0.099
P6KE39 39 35.1 42.9 1 31.6 1 11.1 56.4 0.100
P6KE39A 39 37.1 41.0 1 33.3 1 11.6 53.9 0.100
P6KE43 43 38.7 47.3 1 34.8 1 10.0 61.9 0.101
P6KE43A 43 40.9 45.2 1 36.8 1 10.6 59.3 0.101
P6KE47 47 42.3 51.7 1 38.1 1 9.2 67.8 0.101
P6KE47A 47 44.7 49.4 1 40.2 1 9.7 64.8 0.101
P6KE51 51 45.9 56.1 1 41.3 1 8.5 73.5 0.102
P6KE51A 51 48.5 53.6 1 43.6 1 8.9 70.1 0.102
P6KE56 56 50.4 61.6 1 45.4 1 7.8 80.5 0.103
P6KE56A 56 53.2 58.8 1 47.8 1 8.1 77.0 0.103
P6KE62 62 55.8 68.2 1 50.2 1 7.0 89.0 0.104
P6KE62A 62 58.9 65.1 1 53.0 1 7.4 85.0 0.104
Version: M1602
P6KE SERIES
Taiwan Semiconductor
Breakdown Voltage
(Note 1)
V
BR
General
Part
Number
(V)
Nominal
Voltage
Taiwan Semiconductor ping Vollag
CREAT BY ART
Test Stand-Off Maximum Maximum Maximum Maximum
Current Voltage Reverse Leakage Peak Surge Clamping Voltag
e
Temperature
@ V
WM
Current @ I
PPM
Coefficient
I
T
V
WM
I
R
I
PPM
Vc of V
BR
(V) (mA) (V) (μA) (A) (V) (%/°C)
Min Max (Note 2)
P6KE68 68 61.2 74.8 1 55.1 1 6.4 98.0 0.104
P6KE68A 68 64.6 71.4 1 58.1 1 6.8 92.0 0.104
P6KE75 75 67.5 82.5 1 60.7 1 5.8 108 0.105
P6KE75A 75 71.3 78.8 1 64.1 1 6.1 103 0.105
P6KE82 82 73.8 90.2 1 66.4 1 5.3 118 0.105
P6KE82A 82 77.9 86.1 1 70.1 1 5.5 113 0.105
P6KE91 91 81.9 100 1 73.7 1 4.8 131 0.106
P6KE91A 91 86.5 95.5 1 77.8 1 5.0 125 0.106
P6KE100 100 90 110 1 81.0 1 4.3 144 0.106
P6KE100A 100 95 105 1 85.5 1 4.5 137 0.106
P6KE110 110 99 121 1 89.2 1 3.9 158 0.107
P6KE110A 110 105 116 1 94.0 1 4.1 152 0.107
P6KE120 120 108 132 1 97.2 1 3.6 173 0.107
P6KE120A 120 114 126 1 102 1 3.8 165 0.107
P6KE130 130 117 143 1 105 1 3.3 187 0.107
P6KE130A 130 124 137 1 111 1 3.5 179 0.107
P6KE150 150 135 165 1 121 1 2.9 215 0.108
P6KE150A 150 143 158 1 128 1 3.0 207 0.108
P6KE160 160 144 176 1 130 1 2.7 230 0.108
P6KE160A 160 152 168 1 136 1 2.8 219 0.108
P6KE170 170 153 187 1 138 1 2.5 244 0.108
P6KE170A 170 162 179 1 145 1 2.6 234 0.108
P6KE180 180 162 198 1 146 1 2.4 258 0.108
P6KE180A 180 171 189 1 154 1 2.5 246 0.108
P6KE200 200 180 220 1 162 1 2.1 287 0.108
P6KE200A 200 190 210 1 171 1 2.2 274 0.108
P6KE220 220 198 242 1 175 1 1.8 344 0.108
P6KE220A 220 209 231 1 185 1 1.9 328 0.108
P6KE250 250 225 275 1 202 1 1.7 360 0.110
P6KE250A 250 237 263 1 214 1 1.8 344 0.110
P6KE300 300 270 330 1 243 1 1.4 430 0.110
P6KE300A 300 285 315 1 256 1 1.5 414 0.110
P6KE350 350 315 385 1 284 1 1.2 504 0.110
P6KE350A 350 332 368 1 300 1 1.3 482 0.110
P6KE400 400 360 440 1 324 1 1.0 574 0.110
P6KE400A 400 380 420 1 342 1 1.1 548 0.110
P6KE440 440 396 484 1 356 1 1.0 631 0.110
P6KE440A 440 418 462 1 376 1 1.04 602 0.110
Notes:
1. V
BR
measure after I
T
applied for 300μs, I
T
=square wave pulse or equivalent.
2. Surge current waveform per figure. 3 and derate per figure. 2.
3. For bipolar types having V
WM
of 10 volts and under, the I
R
limit is doubled.
4. All terms and symbols are consistent with ANSI/IEEE C62.35.
Version: M1602
P6KE SERIES
Taiwan Semiconductor
General
Part
Number
Nominal
Voltage
Breakdown Voltage
(Note 1)
V
BR
(V)
P6KE SERIES Taiwan Semiconductor at? l B i
CREAT BY ART
Min Max Min Max
A 2.60 3.60 0.102 0.142
B 0.70 0.90 0.028 0.035
C 25.40 - 1.000 -
D 5.80 7.60 0.228 0.299
E 25.40 - 1.000 -
P/N = Specific Device Code
G = Green Compound
YWW = Date Code
F = Factory Code
Note: Cathode band for uni-directional products only
Version: M1602
MARKING DIAGRAM
P6KE SERIES
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS
DIM. Unit (mm) Unit (inch)
DO-204AC (DO-15)
5 P6KE SERIES SEMICONDUCTO Taiwan Semiconductor
CREAT BY ART
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Version: M1602
P6KE SERIES
Taiwan Semiconductor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,

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