DG469,470 Datasheet by Vishay Siliconix

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— V VI SHAYm
Vishay Siliconix
DG469, DG470
Document Number: 71470
S09-1053-Rev. D, 08-Jun-09
www.vishay.com
1
High Voltage, Single and Dual Supply SPDT Analog Switch
with Enable Pin
FEATURES
Low on resistance (3.6 Ω typical)
On resistance flatness (0.4 Ω typical)
44 V supply maximum rating
± 15 V analog signal range
Fully specified at supply voltages of ± 4.5 V, 12 V and ± 15 V
TTL/CMOS compatible
Break before make switching guaranteed
Total harmonic distortion 0.0145 %
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
Audio and video signal switching
Precision automatic test equipment
Precision data acquisition
Relay replacement
Communications systems
Automotive applications
Sample and hold systems
Power routing applications
Telecom signal switching
Medical equipment
Portable and battery power systems
DESCRIPTION
The DG469, DG470 are high voltage SPDT switches, with a
typical on resistance of 3.6 Ω and typical flatness of 0.4 Ω.
The DG469, DG470 are identical, except the DG470
provides an enable input. When the enable input is activated,
both sides of the switch are in a high impedance mode (Off),
maintaining a "Safe State" at power up. This function can
also be used as a quick "disconnect" in the event of a fault
condition. For audio switching, the enable pin provides a
mute function. These are high voltage switches that are fully
specified with dual supplies at ± 4.5 V and ± 15 V and a
single supply of 12 V over an operating temperature range
from - 40 °C to + 125 °C. Fast switching speeds coupled with
high signal bandwidth makes these parts suitable for video
switching applications. All digital inputs have 0.8 V and 2.4 V
logic thresholds ensuring low voltage TTL/CMOS
compatibility. Each switch conducts equally well in both
directions when on and can handle an input signal range that
extends to the supply voltage rails. They exhibit break-
before-make switching action to prevent momentary shorting
when switching between channels. The DG469, DG470 are
offered in a MSOP 8 and SOIC 8 package.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
TRUTH TABLE DG469
Logic NC NO
0ONOFF
1OFFON
4
6
7
8
1
2
3
DG469
MSOP 8 and SOIC 8
5
Top View
No Connect
COM
NC
GND
V+
NO
V-
IN
TRUTH TABLE DG470
ENABLE Logic NC NO
0 0 ON OFF
01OFFON
1XOFFOFF
1
8
2
7
3
6
4
5
DG470
MSOP 8 and SOIC 8
Top View
EN
COM
NC
GND
V+
NO
V-
IN
RoHS
COMPLIANT
— VISHAYa V
www.vishay.com
2
Document Number: 71470
S09-1053-Rev. D, 08-Jun-09
Vishay Siliconix
DG469, DG470
Notes:
a. - 40 °C to 85 °C datasheet limits apply.
Notes:
a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC board.
c. Derate 4.0 mW/°C above 70 °C.
d. Derate 5.0 mW/°C above 70 °C.
ORDERING INFORMATION
Temp. Range Package Part Number
DG469, DG470
- 40 °C to 125 °Ca
8-Pin MSOP DG469EQ-T1-E3
DG470EQ-T1-E3
8-Pin Narrow SOIC DG469EY-T1-E3
DG470EY-T1-E3
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Limit Unit
V+ to V- 44
V
GND to V- 25
Digital Inputsa, VS, VD(V-) - 2 to (V+) + 2
or 30 mA, whichever occurs first
Continuous Current (NO, NC, or COM) 120
mACurrent (Any terminal except NO, NC, or COM) 30
Peak Current, (Pulsed 1 ms, 10 % Duty Cycle) 200
Storage Temperature - 65 to 150 °C
Power Dissipation (Package)b8-Pin MSOPc320 mW
8-Pin Narrow SOICd400
SPECIFICATIONS for Dual Supplies
Parameter Symbol
Test Conditions
Unless Specified
V+ = 15 V, V- = - 15 V
VIN = 2.4 V, 0.8 VaTemp.b Typ.c
- 40 °C to 125 °C - 40 °C to 85 °C
Unit Min.dMax.dMin.dMax.d
Analog Switch
Analog Signal RangeeVANALOG Full - 15 15 - 15 15 V
On-Resistance RON IS = 50 mA, VD = - 10 V to + 10 V Room
Full
3.6 6
8
6
7
ΩOn-Resistance Match ΔRON IS = 50 mA, VD = ± 10 V Room
Full
0.12 0.4
0.9
0.4
0.5
On-Resistance Flatness RFLATNESS IS = 50 mA, VD = - 5 V, 0 V, + 5 V Room
Full
0.4 0.5
0.9
0.5
0.8
Switch Off
Leakage Current
IS(off)
VD = ± 14 V, VS = ± 14 V
Room
Full
± 0.1 - 0.5
- 20
0.5
20
- 0.5
- 2.5
0.5
2.5
nA
ID(off) Room
Full
± 0.1 - 0.5
- 20
0.5
20
- 0.5
- 2.5
0.5
2.5
Channel On
Leakage Current ID(on) VS = VD = ± 14 V Room
Full
± 0.2 - 0.5
- 20
0.5
20
- 0.5
- 5
0.5
5
Digital Control
Input Current, VIN Low IIL VIN Under Test = 0.8 V Full 0.05 - 1 1 - 1 1 µA
Input Current, VIN High IIH VIN Under Test = 2.4 V Full 0.05 - 1 1 - 1 1
Input CapacitanceeCIN f = 1 MHz Room 3.7 pF
— VISHAYN V
Document Number: 71470
S09-1053-Rev. D, 08-Jun-09
www.vishay.com
3
Vishay Siliconix
DG469, DG470
Dynamic Characteristics
Tu r n - On T i me tON RL = 300 Ω, CL = 35 pF
VS = ± 10 V
Room
Full
129 166
200
166
185
ns
Turn-Off Time tOFF Room
Full
80 108
135
108
120
Break-Before-Make
Time Delay tD
VS = 10 V
RL = 300 Ω, CL = 35 pF Room 15
Charge InjectioneQVg = 0 V, Rg = 0 Ω, CL = 1 nF Room 58 pC
Off IsolationeOIRR RL = 50 Ω, CL = 5 pF
f = 1 MHz
Room - 57
dB
Channel-to-Channel
CrosstalkeXTA L K Room - 63
Source Off CapacitanceeCS(off)
f = 1 MHz
Room 37
pF
Drain Off CapacitanceeCD(off) Room 85
Channel On CapacitanceeCD(on) Room 125
Power Supplies
Power Supply Current I+
V+ = 16.5 V, V- = - 16.5 V
VIN = 0 or 5 V
Room
Full
3.0 6
7
6
7
µANegative Supply Current I- Room
Full
- 0.4 - 0.5
- 4.5
- 0.5
- 4.5
Ground Current IGND Room
Full
- 3.0 - 6
- 7
- 6
- 7
SPECIFICATIONS for Dual Supplies
Parameter Symbol
Test Conditions
Unless Specified
V+ = 15 V, V- = - 15 V
VIN = 2.4 V, 0.8 VaTemp.b Typ.c
- 40 °C to 125 °C - 40 °C to 85 °C
Unit Min.dMax.dMin.dMax.d
SPECIFICATIONS for Dual Supplies
Parameter Symbol
Test Conditions
Unless Specified
V+ = 4.5 V, V- = - 4.5 V
VIN = 2.4 V, 0.8 VaTemp.b Typ.c
- 45 °C to 125 °C - 40 °C to 85 °C
Unit Min.dMax.dMin.dMax.d
Analog Switch
Analog Signal RangeeVANALOG Full - 4.5 4.5 - 4.5 4.5 V
On-ResistanceeRON IS = 50 mA, VD = - 2 V to + 2 V Room
Full
811
16
11
15 Ω
On-Resistance MatcheΔRON IS = 50 mA, VD = ± 2 V Room
Full
0.6 0.7
0.9
0.7
0.8
Dynamic Characteristics
Tu r n - On T i me etON RL = 300 Ω, CL = 35 pF
VS = 2 V
Room
Full
245 265
340
65
310
ns
Turn-Off TimeetOFF Room
Full
145 163
200
163
185
Break-Before-Makee
Time Delay tD
VS = 2 V
RL = 300 Ω, CL = 35 pF
Room
Full
15
Charge InjectioneQVg = 0 V, Rg = 0 Ω, CL = 1 nF Full 58 pC
Power Supplies
Power Supply CurrenteI+
VIN = 0 or 4.5 V
Room
Full
3.0 6
7
6
7
µA
Negative Supply CurrenteI- Room
Full
- 0.4 - 0.5
- 4.5
- 0.5
- 4.5
Ground CurrenteIGND Room
Full
3.0 - 6
- 7
- 6
- 7
— VISHAYa V
www.vishay.com
4
Document Number: 71470
S09-1053-Rev. D, 08-Jun-09
Vishay Siliconix
DG469, DG470
Notes:
a. VIN = input voltage to perform proper function.
b. Room = 25 °C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS for Unipolar Supplies
Parameter Symbol
Test Conditions
Unless Specified
V+ = 12 V, V- = 0 V
VIN = 2.4 V, 0.8 VaTemp.b Typ.c
- 40 °C to 125 °C - 40 °C to 85 °C
Unit Min.dMax.dMin.dMax.d
Analog Switch
Analog Signal RangeeVANALOG Full 12 12 V
On-Resistance RON IS = 25 mA, VD = 0 V to + 10 V Room
Full
7.5 8.5
14
8.5
11.3
Ω
On-Resistance Match ΔRON IS = 25 mA, VD = + 10 V Room
Full
0.4 0.45
0.9
0.45
0.5
On-Resistance Flatness RFLATNESS
IS = 25 mA,
VD = 0 V, + 5 V, + 10 V
Room
Full
2.5 2.6
2.9
2.6
2.8
Dynamic Characteristics
Tur n -O n Ti me tON RL = 300 Ω, CL = 35 pF
VS = 10 V
Room
Full
190 200
255
200
240
ns
Turn-Off Time tOFF Room
Full
100 110
135
110
120
Break-Before-Make
Time Delay tD
VS = 10 V
RL = 300 Ω, CL = 35 pF Room 50
Charge InjectioneQVg = 0 V, Rg = 0 Ω, CL = 1 nF Room 2.4 pC
Power Supplies
Power Supply Current I+
VIN = 0 or 5 V
Room
Full
3.0 6
7
6
7
µANegative Supply Current I- Room
Full
- 0.4 - 0.5
- 4.5
- 0.5
- 4.5
Ground Current IGND Room
Full
- 3.0 - 6
- 7
- 6
- 7
— VISHAYm V
Document Number: 71470
S09-1053-Rev. D, 08-Jun-09
www.vishay.com
5
Vishay Siliconix
DG469, DG470
TYPICAL CHARACTERISTICS
On-Resistance vs. VD and Dual Supply Voltage
On-Resistance vs. VD and Temperature
Leakage Current vs. Temperature
- 20 - 15 - 10 - 5 0 5 10 15 20
VCOM - Analog Voltage (V)
RON - On-Resistance (Ω)
2
4
6
8
10
12
+/- 4.5
±
± 4.5 V
10.0 V
± 10.0 V
TA = 25 °C
IS = 50 mA
± 20.0 V
± 15.0 V
± 12.0 V
± 13.5 V
VCOM - Analog Voltage (V)
RON - On-Resistance (Ω)
- 15 - 10 - 5 0 5 10 15
0
1
2
3
4
5
6
7
8
V+ = + 15 V
V- = - 15 V
IS = 50 mA
+ 85 °C
- 40 °C
Temperature (°C)
Leakage Current (pA)
10
100
1000
10 000
100 000
- 60 - 40 - 20 0 20 40 60 80 100 120 140
V+ = + 15 V
V- = - 15 V
ID(on)
ID(off)
IS(off)
On-Resistance vs. VD and Single Supply Voltage
On-Resistance vs. VD and Temperature
Leakage Current vs. Temperature
VCOM - Analog Voltage (V)
RON - On-Resistance (Ω)
04812162024283236
2
3
4
5
6
7
8
9
10
11
12
13
14
+ 7.0 V
+ 36.0 V
+ 24.0 V
+ 20.0 V
+ 12.0 V
+ 10.8 V
+ 9.0 V
TA = 25 °C
IS = 25 mA
VCOM - Analog Voltage (V)
RON - On-Resistance (Ω)
024681012
0
2
4
6
8
10
12
V+ = + 12 V
V- = 0 V
IS = 25 mA
+ 125 °C
+ 85 °C
+ 25 °C
- 40 °C
- 55 °C
Temperature (°C)
Leakage Current (pA)
10
100
1000
10 000
100 000
- 60 - 40 - 20 0 20 40 60 80 100 120 140
V+ = + 12 V
V- = - 12 V
ID(on)
IS(off)
ID(off)
— VISHAYa V
www.vishay.com
6
Document Number: 71470
S09-1053-Rev. D, 08-Jun-09
Vishay Siliconix
DG469, DG470
TYPICAL CHARACTERISTICS
Charge Injection vs. Analog Voltage
Charge Injection vs. Analog Voltage
Switching Time vs. Temperature and
Dual Supply Voltage
- 200
- 150
- 100
- 50
0
50
100
150
200
0 1 2 3 4 5 6 7 8 9 10 11 12
VCOM - Analog Voltage (V)
Q - Charge Injection (pC)
V+ = + 12 V
V- = 0 V
CL = 1 nF
- 350
- 300
- 250
- 200
- 150
- 100
- 50
0
50
100
150
200
250
300
350
- 15 - 10 - 5 0 5 10 15
V+ = + 5 V
V- = - 15 V
CL = 1 nF
VCOM - Analog Voltage (V)
Q - Charge Injection (pC)
0
50
100
150
200
250
300
350
- 55 - 40 25 85 125
Temperature (°C)
tON/tOFF (ns)
tON, V ± = ± 4.5 V
tON, V ± = ± 15 V
tOFF, V ± = ± 4.5 V
tOFF, V ± = ± 15 V
Switching Time vs. Single Supply Voltage
Switching Time vs. Temperature and
Single Supply Voltage
Switching Time vs. Dual Supply Voltage
Supply Voltage (V)
tON/tOFF (s)
0
50
100
150
200
250
300
4 8 12 16 20 24 28 32 36
tON
tOFF
T = 25 °C
0
50
100
150
200
250
300
- 55 - 40 25 85 125
Temperature (°C)
tON/tOFF (ns)
tON, V+ = 7 V
tON, V+ = 12 V
tOFF , V+ = 7 V
tOFF , V+ = 12 V
Supply Voltage (V)
tON/tOFF (s)
0
50
100
150
200
250
300
468101214161820
tON
tOFF
T = 25 °C
— VISHAYN V
Document Number: 71470
S09-1053-Rev. D, 08-Jun-09
www.vishay.com
7
Vishay Siliconix
DG469, DG470
TYPICAL CHARACTERISTICS
TEST CIRCUITS
Insertion Loss, Off-Isolation, Crosstalk
vs. Frequency
Switching Threshold vs. Dual Supply Voltage
Frequency (Hz)
dB
- 90
- 80
- 70
- 60
- 50
- 40
- 30
- 20
- 10
0
OIRR
XTALK
0 Hz 300 kHz 1 MHz 10 MHz 100 MHz 1 GHz
BW
V+ - Supply Voltage (V)
VT - Switching Threshold (V)
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
4 6 8 101214161820
Switching Threshold vs. Signal Supply Voltage
DG469, DG470 Total Harmonic Distortion
V+ - Supply Voltage (V)
VT - Switching Threshold (V)
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
4 8 12 16 20 24 28 32 36
0.001
0.01
0.1
1
10 100 1000 10 000 100 000
Frequency (Hz)
THD (%)
+ 12 V
± 15 V
± 10 V
Figure 1. Switching Time
C
L
(includes fixture and stray capacitance)
R
L
R
L
+ r
DS
(
on
)
V
O
= V
S
V-
IN
S D
C
L
35 pF
- 15 V
GND
VO
10 V
V+
R
L
300
+ 15
V
0 V
Logic
Input
Switch
Input
3 V
50 %
0 V
V
O
V
S
tr < 5 ns
tf < 5 ns
tOFF
t
ON
90 %
Note: Logic input waveform is inverted for switches that have the
opposite logic sense control.
90 %
— VISHAY. V
www.vishay.com
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Document Number: 71470
S09-1053-Rev. D, 08-Jun-09
Vishay Siliconix
DG469, DG470
TEST CIRCUITS
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71470.
Figure 2. Break-Before-Make
IN
V
NO
COM
V -
V
NC
NC
V+
NO
- 15 V
GND
V+
C
L
35 pF
V
O
R
L
50 Ω
C
L
(includes fixture and stray capacitance)
V
INL
V
INH
0 V
Logic
Input
Switch
Output
V
O
V
NC
= V
NO
t
r
< 5 ns
t
f
< 5 ns
90 %
t
D
t
D
Figure 3. Charge Injection
CL
1 nF
NO or NC
Rg
VO
V+
COM
V-
3 V
EN
Vg
- 15 V
GND
+ 15 V
OFFONOFF
OFFONOFF
VO
ΔV
O
ENX
ENX
Q = ΔVO x CL
VINH or VINL
IN
Switch under test
NO
NC
IN
VINH
VINL
Figure 4. Off-Isolation
V+
S
R
g
= 50 Ω
D
- 15 V
V
S
GND V -
C
R
L
IN
V
O
0 V, 2.4 V
Off Isolation = 20 log
V
O
V
S
+ 15
V
C
50 Ω
C = RF Bypass
Figure 5. Source/Drain Capacitances
IN
S
V+
D
C
0 V, 2.4 V
Meter
HP4192A
Impedance
Analyzer
or Equivalent
+ 15
V
C
IN
S
V+
D
- 15 V
GND V- C
0 V, 2.4 V
C
— VISHAY. V
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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All product specifications and data are subject to change without notice.
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(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
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