ZXTN2018FTA Datasheet by Diodes Incorporated

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Issue 2 - September 2005 1 www.zetex.com
© Zetex Semiconductors plc 2005
ZXTN2018F
60V, SOT23, NPN medium power transistor
Summary
V(BR)CEV > 140V, V(BR)CEO > 60V
IC(cont) = 5A
RCE(sat) = 25 m typical
VCE(sat) < 45 mV @ 1A
PD = 1.2W
Complementary part number : ZXTP2027F
Description
Advanced process capability and package design have been used to
maximize the power handling and performance of this small outline
transistor. The compact size and ratings of this device make it ideally
suited to applications where space is at a premium.
Features
Higher power dissipation SOT23 package
High peak current
Low saturation voltage
140V forward blocking voltage
Applications
MOSFET and IGBT gate driving
Motor drive
Relay, lamp and solenoid drive
Ordering information
Device marking
851
Device Reel size
(inches)
Tape width
(mm)
Quantity per reel
ZXTN2018FTA 7 8 3,000
Pinout - top view
ZXTN2018F
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© Zetex Semiconductors plc 2005
Absolute maximum ratings
Thermal resistance
Parameter Symbol Limit Unit
Collector-base voltage VCBO 140 V
Collector-emitter voltage V(BR)CEV 140 V
Collector-emitter voltage VCEO 60 V
Emitter-base voltage VEBO 7V
Peak pulse current ICM 12 A
Continuous collector current (a) IC5A
Base current IB1A
Power dissipation @ TA=25oC (a)
Linear derating factor
PD1.0
8.0
W
mW/oC
Power dissipation @ TA=25oC (b)
Linear derating factor
PD1.2
9.6
W
mW/oC
Power dissipation @ TA=25oC (c)
Linear derating factor
PD1.56
12.5
W
mW/oC
Operating and storage temperature Tj:Tstg -55 to +150 oC
Parameter Symbol Value Unit
Junction to ambient (a)
NOTES:
(a) Mounted on 18mm x 18mm X 1.6mm FR4 PCB with a very high coverage of 2 oz weight copper in still air conditions.
RJA 125 oC/W
Junction to ambient (b)
(b) Mounted on 30mm x 30mm X 1.6mm FR4 PCB with a very high coverage of 2 oz weight copper in still air conditions.
RJA 104 oC/W
Junction to ambient (c)
(c) as (b) above measured at t<5secs.
RJA 80 oC/W
Vow see note (b) 2 10 Limited E E ‘5 1 9 DC .9 is $100," 100m: =0 iDms Single Pulse 1m: 00 Tm=25°c mans — 10m 100m 1 10 VCE Collector»Em|tter Voltage (V) Safe Operating Area 120 ’ Tdm:25 C 100 7 see note (b) 4— Single uise 1 N iiii Hm 10m100m 1 )0 Pulse Width (5) Transient Thermal Impedance rn Thermal Resistance (”C/W) 100 1k 100“ ‘iOu Failure may occur In «ms raglan W 140V |C Collector Current (A) Tm:25: c o 20 40 so 50 100120140 VCE Collector-Emitter Voltage (V) Safe Operating Area iv see note (n) b F7 on o a: see note (a) o a. .0 m Max Power Dissipation (W) o b o 20 40 60 so 100 Temperature (“0) Derating Curve 120 140 160 Single Pulse rm:25“c see note (in 100 10 1 Maximum Power (W) 100“ 1m 10m 100m 1 10 Pulse Width (5) Pulse Power Dissipation 100 1k
ZXTN2018F
Issue 2 - September 2005 3 www.zetex.com
© Zetex Semiconductors plc 2005
Characteristics
ZXTN2018F
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© Zetex Semiconductors plc 2005
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Symbol
Min. Typ.
Max. Unit
Conditions
Collector-base breakdown
voltage
V(BR)CBO 140 180 V IC=100A
Collector-emitter breakdown
voltage
V(BR)CEV 140 180 V IC =1A,
-1V < VBE < +0.3V
Collector-emitter breakdown
voltage
V(BR)CEO 60 80 V IC=10mA (a)
NOTES:
(a) Measured under pulsed conditions. Pulse width=300S. Duty cycle 2%.
Emitter-base breakdown
voltage
V(BR)EBO 78 VIE=100A
Collector-emitter cut-off
current
ICEV <1 20 nA VCE=110V,
VBE = -1V
Collector-base cut-off current ICBO <1 20 nA VCB=110V
Emitter-base cut-off current IEBO <1 10 nA VEB=6V
Static forward current transfer
ratio
HFE 100
100
40
15
220
200
65
25
300
IC=10mA, VCE=1V(a)
IC=2A, VCE=1V(a)
IC=5A, VCE=1V(a)
IC=10A, VCE=1V(a)
Collector-emitter saturation
voltage
VCE(sat) 15
35
40
85
145
170
30
45
55
110
170
210
mV
mV
mV
mV
mV
mV
IC=0.1A, IB=5mA(a)
IC=1A, IB=100mA(a)
IC=1A, IB=50mA(a)
IC=2A, IB=50mA(a)
IC=5A, IB=250mA(a)
IC=6A, IB=300mA(a)
Base-emitter saturation voltage VBE(sat) 0.92 1.00 V IC=5A, IB=250mA(a)
Base-emitter turn-on voltage VBE(on) 0.85 0.95 V IC=5A, VCE=1V(a)
Transition frequency fT130 MHz
Ic=100mA, V
CE
=10V,
f=50MHz
Output capacitance Cobo 28 pF VCB=10V, f=1MHz
Turn-on time t(on) 33 ns VCC=10V, IC=1A,
Turn-off time t(off) 668 ns IB1=IB2=100mA
Tamb=25’C 31001“ C 3‘; g \ 141550 > 1:112:20 10m ‘ , lama—10 65%: 1m 10m 100m 1 1o 1m 10m 100m 1 10 IC Collector Current (A) |C Co‘lector Current (A) VCE[SAT) V In vCElSAT) V IC 250 1 5 1 2 240 1 4 :: ”Ta .8 1,0 200$ A 1 2 3 0,8 1505 v 1 o a: m c .9 0.6 1200 < e="" _="" a="" 08="" {u="" lu="" e="" 04="" 30="" 2="">m ‘5 1; 0 6 Z 02 40 .— 0 4 100%) 0,0 0 1m 10m 100m 1 1o 1m 10m 100m 1 10 IC Collector Current (A) |C Co‘lector Current (A) hFE V In: VBElSAT) V lc E 2 9 m m > L’WUD‘C 1m 10m 100m 1 10 IC Collec‘orCurrem (A) Vsewu) V lc
ZXTN2018F
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© Zetex Semiconductors plc 2005
Typical characteristics
ZXTN2018F
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© Zetex Semiconductors plc 2005
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Packaging details - SOT23
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
Dim. Millimeters Inches Dim. Millimeters Inches
Min. Max. Min. Max. Min. Max. Max. Max.
A 2.67 3.05 0.105 0.120 H 0.33 0.51 0.013 0.020
B 1.20 1.40 0.047 0.055 K 0.01 0.10 0.0004 0.004
C - 1.10 - 0.043 L 2.10 2.50 0.083 0.0985
D 0.37 0.53 0.015 0.021 M 0.45 0.64 0.018 0.025
F 0.085 0.15 0.0034 0.0059 N 0.95 NOM 0.0375 NOM
G 1.90 NOM 0.075 NOM - - - - -
L
N
H
G
A
C
F
B
M
K
D
3 leads

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