TO-264-3, TO-264AA Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
FDL100N50F MOSFET N-CH 500V 100A TO264-3 onsemi	381 In Stock	1 : $28.65000 Tube	UniFET™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	100A (Tc)	10V	55mOhm @ 50A, 10V	5V @ 250µA	238 nC @ 10 V	±30V	12000 pF @ 25 V	-	2500W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-264-3	TO-264-3, TO-264AA
IXFK180N25T MOSFET N-CH 250V 180A TO264AA IXYS	1,134 In Stock	1 : $30.08000 Tube	HiPerFET™, Trench	Tube	Active	N-Channel	MOSFET (Metal Oxide)	250 V	180A (Tc)	10V	12.9mOhm @ 60A, 10V	5V @ 8mA	345 nC @ 10 V	±20V	28000 pF @ 25 V	-	1390W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-264AA (IXFK)	TO-264-3, TO-264AA
IXFK44N80P MOSFET N-CH 800V 44A TO264AA IXYS	194 In Stock	1 : $33.30000 Tube	HiPerFET™, Polar	Tube	Active	N-Channel	MOSFET (Metal Oxide)	800 V	44A (Tc)	10V	190mOhm @ 22A, 10V	5V @ 8mA	198 nC @ 10 V	±30V	12000 pF @ 25 V	-	1040W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-264AA (IXFK)	TO-264-3, TO-264AA
IXTK170P10P MOSFET P-CH 100V 170A TO264 IXYS	849 In Stock	1 : $33.70000 Tube	PolarP™	Tube	Active	P-Channel	MOSFET (Metal Oxide)	100 V	170A (Tc)	10V	12mOhm @ 500mA, 10V	4V @ 1mA	240 nC @ 10 V	±20V	12600 pF @ 25 V	-	890W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-264 (IXTK)	TO-264-3, TO-264AA
IXTK90P20P MOSFET P-CH 200V 90A TO264 IXYS	268 In Stock	1 : $33.70000 Tube	PolarP™	Tube	Active	P-Channel	MOSFET (Metal Oxide)	200 V	90A (Tc)	10V	44mOhm @ 500mA, 10V	4V @ 1mA	205 nC @ 10 V	±20V	12000 pF @ 25 V	-	890W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-264 (IXTK)	TO-264-3, TO-264AA
IXTK32P60P MOSFET P-CH 600V 32A TO264 IXYS	128 In Stock	1 : $33.70000 Tube	PolarP™	Tube	Active	P-Channel	MOSFET (Metal Oxide)	600 V	32A (Tc)	10V	350mOhm @ 16A, 10V	4V @ 1mA	196 nC @ 10 V	±20V	11100 pF @ 25 V	-	890W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-264 (IXTK)	TO-264-3, TO-264AA
IXFK150N30P3 MOSFET N-CH 300V 150A TO264AA IXYS	473 In Stock	1 : $34.19000 Tube	HiPerFET™, Polar3™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	300 V	150A (Tc)	10V	19mOhm @ 75A, 10V	5V @ 8mA	197 nC @ 10 V	±20V	12100 pF @ 25 V	-	1300W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-264AA (IXFK)	TO-264-3, TO-264AA
IXFK240N25X3 MOSFET N-CH 250V 240A TO264 IXYS	468 In Stock	1 : $49.05000 Tube	HiPerFET™, Ultra X3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	250 V	240A (Tc)	10V	5mOhm @ 120A, 10V	4.5V @ 8mA	345 nC @ 10 V	±20V	23800 pF @ 25 V	-	1250W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-264	TO-264-3, TO-264AA
IXTK90N25L2 MOSFET N-CH 250V 90A TO264 IXYS	223 In Stock	1 : $51.18000 Tube	Linear L2™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	250 V	90A (Tc)	10V	33mOhm @ 45A, 10V	4.5V @ 3mA	640 nC @ 10 V	±20V	23000 pF @ 25 V	-	960W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-264 (IXTK)	TO-264-3, TO-264AA
IXTK400N15X4 MOSFET N-CH 150V 400A TO264 IXYS	258 In Stock	1 : $86.42000 Tube	Ultra X4	Tube	Active	N-Channel	MOSFET (Metal Oxide)	150 V	400A (Tc)	10V	3.1mOhm @ 100A, 10V	4.5V @ 1mA	430 nC @ 10 V	±20V	14500 pF @ 25 V	-	1500W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-264	TO-264-3, TO-264AA
IXFK44N50P MOSFET N-CH 500V 44A TO264AA IXYS	306 In Stock	1 : $21.09000 Tube	HiPerFET™, Polar	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	44A (Tc)	10V	140mOhm @ 22A, 10V	5V @ 4mA	98 nC @ 10 V	±30V	5440 pF @ 25 V	-	658W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-264AA (IXFK)	TO-264-3, TO-264AA
IXFK140N25T MOSFET N-CH 250V 140A TO264AA IXYS	105 In Stock	1 : $24.18000 Tube	HiPerFET™, Trench	Tube	Active	N-Channel	MOSFET (Metal Oxide)	250 V	140A (Tc)	10V	17mOhm @ 60A, 10V	5V @ 4mA	255 nC @ 10 V	±20V	19000 pF @ 25 V	-	960W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-264AA (IXFK)	TO-264-3, TO-264AA
APT37M100L MOSFET N-CH 1000V 37A TO264 Microchip Technology	133 In Stock	1 : $29.75000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1000 V	37A (Tc)	10V	330mOhm @ 18A, 10V	5V @ 2.5mA	305 nC @ 10 V	±30V	9835 pF @ 25 V	-	1135W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-264	TO-264-3, TO-264AA
IXFK200N10P MOSFET N-CH 100V 200A TO264AA IXYS	117 In Stock	1 : $29.78000 Tube	HiPerFET™, Polar	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	200A (Tc)	10V	7.5mOhm @ 100A, 10V	5V @ 8mA	235 nC @ 10 V	±20V	7600 pF @ 25 V	-	830W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-264AA (IXFK)	TO-264-3, TO-264AA
IXFK160N30T MOSFET N-CH 300V 160A TO264AA IXYS	2,001 In Stock	1 : $30.08000 Tube	HiPerFET™, Trench	Tube	Active	N-Channel	MOSFET (Metal Oxide)	300 V	160A (Tc)	10V	19mOhm @ 60A, 10V	5V @ 8mA	335 nC @ 10 V	±20V	28000 pF @ 25 V	-	1390W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-264AA (IXFK)	TO-264-3, TO-264AA
IXFK140N30P MOSFET N-CH 300V 140A TO264AA IXYS	681 In Stock	1 : $34.52000 Tube	HiPerFET™, Polar	Tube	Active	N-Channel	MOSFET (Metal Oxide)	300 V	140A (Tc)	10V	24mOhm @ 70A, 10V	5V @ 8mA	185 nC @ 10 V	±20V	14800 pF @ 25 V	-	1040W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-264AA (IXFK)	TO-264-3, TO-264AA
IXFK64N60P MOSFET N-CH 600V 64A TO264AA IXYS	384 In Stock	1 : $34.52000 Tube	HiPerFET™, Polar	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	64A (Tc)	10V	96mOhm @ 500mA, 10V	5V @ 8mA	200 nC @ 10 V	±30V	12000 pF @ 25 V	-	1040W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-264AA (IXFK)	TO-264-3, TO-264AA
IXFK24N100Q3 MOSFET N-CH 1000V 24A TO264AA IXYS	1,600 In Stock	1 : $42.78000 Tube	HiPerFET™, Q3 Class	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1000 V	24A (Tc)	10V	440mOhm @ 12A, 10V	6.5V @ 4mA	140 nC @ 10 V	±30V	7200 pF @ 25 V	-	1000W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-264AA (IXFK)	TO-264-3, TO-264AA
IXTK120P20T MOSFET P-CH 200V 120A TO264 IXYS	414 In Stock	1 : $45.70000 Tube	TrenchP™	Tube	Active	P-Channel	MOSFET (Metal Oxide)	200 V	120A (Tc)	-	30mOhm @ 60A, 10V	4.5V @ 250µA	740 nC @ 10 V	-	73000 pF @ 25 V	-	-	-	-	-	Through Hole	TO-264 (IXTK)	TO-264-3, TO-264AA
IXFK320N17T2 MOSFET N-CH 170V 320A TO264AA IXYS	432 In Stock	1 : $46.38000 Tube	HiPerFET™, TrenchT2™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	170 V	320A (Tc)	10V	5.2mOhm @ 60A, 10V	5V @ 8mA	640 nC @ 10 V	±20V	45000 pF @ 25 V	-	1670W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-264AA (IXFK)	TO-264-3, TO-264AA
IXFB44N100P MOSFET N-CH 1000V 44A PLUS264 IXYS	420 In Stock	1 : $47.43000 Tube	HiPerFET™, Polar	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1000 V	44A (Tc)	10V	220mOhm @ 22A, 10V	6.5V @ 1mA	305 nC @ 10 V	±30V	19000 pF @ 25 V	-	1250W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PLUS264™	TO-264-3, TO-264AA
IXFB150N65X2 MOSFET N-CH 650V 150A PLUS264 IXYS	138 In Stock	1 : $50.42000 Tube	HiPerFET™, Ultra X2	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	150A (Tc)	10V	17mOhm @ 75A, 10V	5.5V @ 8mA	430 nC @ 10 V	±30V	20400 pF @ 25 V	-	1560W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PLUS264™	TO-264-3, TO-264AA
IXFB30N120P MOSFET N-CH 1200V 30A PLUS264 IXYS	177 In Stock	1 : $69.17000 Tube	HiPerFET™, Polar	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1200 V	30A (Tc)	10V	350mOhm @ 500mA, 10V	6.5V @ 1mA	310 nC @ 10 V	±20V	22500 pF @ 25 V	-	1250W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PLUS264™	TO-264-3, TO-264AA
APL502LG MOSFET N-CH 500V 58A TO264 Microchip Technology	73 In Stock	1 : $81.74000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	58A (Tc)	15V	90mOhm @ 29A, 12V	4V @ 2.5mA	-	±30V	9000 pF @ 25 V	-	730W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-264 [L]	TO-264-3, TO-264AA
IXTK5N250 MOSFET N-CH 2500V 5A TO264 IXYS	153 In Stock	1 : $98.04000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	2500 V	5A (Tc)	10V	8.8Ohm @ 2.5A, 10V	5V @ 1mA	200 nC @ 10 V	±30V	8560 pF @ 25 V	-	960W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-264 (IXTK)	TO-264-3, TO-264AA

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Single FET, MOSFETs

Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

n-channel MOSFETs: where electrons are the primary carriers.
p-channel MOSFETs: where holes are the primary carriers.

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.

Single FET, MOSFETs

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