SMC Diode Solutions Single FETs, MOSFETs

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of 92

Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
S2M0160120D MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	234 In Stock	1 : $8.59000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	17A (Tc)	20V	196mOhm @ 10A, 20V	4V @ 2.5mA	26.5 nC @ 20 V	+20V, -5V	513 pF @ 1000 V	-	130W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247AD	TO-247-3
S2M0160120K MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	294 In Stock	1 : $8.66000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	17A (Tc)	20V	196mOhm @ 10A, 20V	4V @ 2.5mA	26.5 nC @ 20 V	+20V, -5V	513 pF @ 1000 V	-	130W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4	TO-247-4
S2M0120120D MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	184 In Stock	1 : $8.82000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	21A (Tc)	20V	150mOhm @ 13.3A, 20V	4V @ 3.3mA	29.6 nC @ 20 V	+20V, -5V	652 pF @ 1000 V	-	156W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247AD	TO-247-3
S2M0120120K MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	295 In Stock	1 : $10.38000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	21A (Tc)	20V	150mOhm @ 13.3A, 20V	4V @ 3.3mA	29.6 nC @ 20 V	+20V, -5V	652 pF @ 1000 V	-	156W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4	TO-247-4
S2M0160120J MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	296 In Stock	1 : $10.47000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	16A (Tc)	20V	196mOhm @ 10A, 20V	4V @ 2.5mA	26.5 nC @ 20 V	+20V, -5V	513 pF @ 1000 V	-	122W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-263-7	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
S2M0120120J MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	300 In Stock	1 : $11.57000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	21A (Tc)	20V	150mOhm @ 13.3A, 20V	4V @ 3.3mA	29.6 nC @ 20 V	+20V, -5V	652 pF @ 1000 V	-	153W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-263-7	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
S2M0080120K MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	260 In Stock	1 : $12.17000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	41A (Tc)	20V	100mOhm @ 20A, 20V	4V @ 10mA	54 nC @ 20 V	+25V, -10V	1324 pF @ 1000 V	-	231W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4	TO-247-4
S2M0080120J MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	203 In Stock	1 : $13.94000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	37A (Tj)	20V	100mOhm @ 20A, 20V	4V @ 10mA	54 nC @ 20 V	+20V, -5V	1324 pF @ 1000 V	-	234W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-263-7	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
S2M0040120D MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	216 In Stock	1 : $16.53000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	-	-	-	-	-	-	-	-	-	-	-	-	Through Hole	TO-247-3	TO-247-3
S2M0040120K MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	103 In Stock	1 : $17.36000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	-	-	-	-	-	-	-	-	-	-	-	-	Through Hole	TO-247-4	TO-247-4
S2M0025120D MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	300 In Stock	1 : $24.21000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	63A (Tj)	20V	34mOhm @ 50A, 20V	4V @ 15mA	130 nC @ 20 V	+25V, -10V	4402 pF @ 1000 V	-	446W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247AD	TO-247-3
S2M0025120K MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	270 In Stock	1 : $26.70000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	63A (Tc)	20V	34mOhm @ 50A, 20V	4V @ 15mA	130 nC @ 20 V	+25V, -10V	4402 pF @ 1000 V	-	446W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4	TO-247-4
S2M0160120I SILICON CARBIDE MOSFET, 160MOHM, SMC Diode Solutions	337 In Stock	1 : $6.35000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	9A (Tc)	20V	196mOhm @ 10A, 20V	4V @ 2.5mA	26.5 nC @ 20 V	+20V, -5V	513 pF @ 1000 V	-	62W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220MF-3L	TO-220-3 Full Pack
S1M1000170K MOSFET SILICON CARBIDE SIC 1700V SMC Diode Solutions	138 In Stock	1 : $7.64000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1700 V	5.2A (Tc)	20V	1.3Ohm @ 2A, 20V	4V @ 500µA	10 nC @ 20 V	+25V, -10V	160 pF @ 1000 V	-	81W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4	TO-247-4
S3M0160120D SILICON CARBIDE MOSFET, 160MOHM, SMC Diode Solutions	300 In Stock	1 : $8.38000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	19A (Tc)	18V	208mOhm @ 7.5A, 18V	4V @ 3mA	31 nC @ 18 V	+18V, -4V	548 pF @ 1200 V	-	163W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247AD	TO-247-3
S2M0080120I SILICON CARBIDE MOSFET, 80MOHM,1 SMC Diode Solutions	349 In Stock	1 : $9.75000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	19A (Tc)	18V, 20V	100mOhm @ 20A, 20V	4V @ 10mA	59.9 nC @ 18 V	+20V, -5V	1324 pF @ 1000 V	-	50W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220MF-3L	TO-220-3 Full Pack
S3M0160120K SILICON CARBIDE MOSFET, 160MOHM, SMC Diode Solutions	300 In Stock	1 : $10.12000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	19A (Tc)	18V	208mOhm @ 7.5A, 18V	4V @ 3mA	31 nC @ 18 V	+18V, -4V	548 pF @ 1200 V	-	163W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4	TO-247-4
S3M0080120D SILICON CARBIDE MOSFET, 80MOHM,1 SMC Diode Solutions	295 In Stock	1 : $10.75000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	36A (Tc)	18V	104mOhm @ 15A, 18V	4V @ 6mA	53 nC @ 18 V	+18V, -4V	984 pF @ 1000 V	-	245W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247AD	TO-247-3
S1M0060065D SILICON CARBIDE MOSFET, 60MOHM,6 SMC Diode Solutions	300 In Stock	1 : $11.46000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	55A (Tc)	18V	79Ohm @ 15A, 18V	4V @ 5mA	62.5 nC @ 18 V	+18V, -4V	1660 pF @ 650 V	-	307W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247AD	TO-247-3
S3M0080120K SILICON CARBIDE MOSFET, 80MOHM,1 SMC Diode Solutions	300 In Stock	1 : $11.67000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	36A (Tc)	18V	104mOhm @ 15A, 18V	4V @ 6mA	53 nC @ 18 V	+18V, -4V	984 pF @ 1000 V	-	245W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4	TO-247-4
S1M0032065D MOSFET SILICON CARBIDE SIC 650V SMC Diode Solutions	256 In Stock	1 : $14.52000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	81A (Tc)	18V	42mOhm @ 28A, 18V	4V @ 9.4mA	121 nC @ 18 V	+18V, -4V	3110 pF @ 650 V	-	416W (Tc)	-55°C ~ 175°C	-	-	Through Hole	TO-247AD	TO-247-3
S1M0032065K MOSFET SILICON CARBIDE SIC 650V SMC Diode Solutions	300 In Stock	1 : $15.68000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	81A (Tc)	18V	42mOhm @ 28A, 18V	4V @ 9.4mA	121 nC @ 18 V	+18V, -4V	3110 pF @ 650 V	-	416W (Tc)	-55°C ~ 175°C	-	-	Through Hole	TO-247-4	TO-247-4
S3M0040120K MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	295 In Stock	1 : $15.79000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	65A (Tc)	18V	52mOhm @ 40A, 18V	4V @ 16mA	143 nC @ 18 V	+22V, -8V	2844 pF @ 1000 V	-	130W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4	TO-247-4
S3M0040120D MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	203 In Stock	1 : $15.99000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	65A (Tc)	18V	52mOhm @ 40A, 18V	4V @ 16mA	143 nC @ 18 V	+20V, -8V	2844 pF @ 1000 V	-	130W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247AD	TO-247-3
S3M0030120B SILICON CARBIDE MOSFET, 30MOHM,1 SMC Diode Solutions	350 In Stock	1 : $16.28000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	65A (Tc)	18V	39mOhm @ 40A, 18V	4V @ 16mA	143 nC @ 18 V	+18V, -4V	2844 pF @ 1000 V	-	333W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-263-7	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

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Single FET, MOSFETs

Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

n-channel MOSFETs: where electrons are the primary carriers.
p-channel MOSFETs: where holes are the primary carriers.

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.

Single FET, MOSFETs

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