8-VDFN Exposed Pad Single FETs, MOSFETs

Results: 108
Stocking Options
Environmental Options
Media
Exclude
108Results
Applied FiltersRemove All

Showing
of 108
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
1,250
In Stock
1 : $16.13000
Cut Tape (CT)
250 : $7.62724
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Last Time Buy
N-Channel
GaNFET (Gallium Nitride)
700 V
40A (Tc)
6V
54mOhm @ 5.5A, 6V
2.6V @ 7.5mA
6.7 nC @ 6 V
+7V, -10V
235 pF @ 400 V
-
-
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-PDFN (8x8)
8-VDFN Exposed Pad
45,000
In Stock
1 : $0.69000
Cut Tape (CT)
5,000 : $0.14033
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
47A (Tc)
4.5V, 10V
8.8mOhm @ 35A, 10V
2.5V @ 250µA
12 nC @ 10 V
±20V
682 pF @ 30 V
-
32W (Tj)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
DFN3333
8-VDFN Exposed Pad
2,935
In Stock
1 : $1.08000
Cut Tape (CT)
5,000 : $0.23430
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
40 V
35A
4.5V, 10V
25mOhm @ 15A, 10V
2.5V @ 250µA
26.6 nC @ 10 V
±20V
1257 pF @ 20 V
-
38W
-55°C ~ 150°C (TJ)
-
-
Surface Mount
DFN3333
8-VDFN Exposed Pad
4,783
In Stock
1 : $1.96000
Cut Tape (CT)
5,000 : $0.47640
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
100 V
15A (Tc)
4.5V, 10V
110mOhm @ 10A, 10V
2.5V @ 250µA
20.1 nC @ 10 V
±20V
1100 pF @ 25 V
-
50W (Tj)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
DFN3333
8-VDFN Exposed Pad
8-VDFN Exposed Pad
650 V, 190 MOHM GALLIUM NITRIDE
Nexperia USA Inc.
1,546
In Stock
1 : $10.76000
Cut Tape (CT)
2,500 : $2.54870
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
650 V
11.5A (Tc)
6V
190mOhm @ 3.9A, 6V
2.5V @ 12.2mA
2.8 nC @ 6 V
+7V, -1.4V
96 pF @ 400 V
-
125W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount, Wettable Flank
DFN8080-8
8-VDFN Exposed Pad
614
In Stock
1 : $12.94000
Cut Tape (CT)
250 : $5.91444
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Last Time Buy
N-Channel
GaNFET (Gallium Nitride)
650 V
18A (Tc)
6V
110mOhm @ 5.5A, 6V
2.6V @ 4.8mA
4 nC @ 6 V
+7V, -10V
132 pF @ 400 V
-
-
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-PDFN (8x8)
8-VDFN Exposed Pad
536
In Stock
1 : $16.11000
Cut Tape (CT)
250 : $7.61396
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Last Time Buy
N-Channel
GaNFET (Gallium Nitride)
650 V
30A (Tc)
6V
68mOhm @ 5.5A, 6V
2.6V @ 7.5mA
6.7 nC @ 6 V
+7V, -10V
235 pF @ 400 V
-
-
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-PDFN (8x8)
8-VDFN Exposed Pad
13,280
In Stock
1 : $1.03000
Cut Tape (CT)
5,000 : $0.26033
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
30A (Tc)
4.5V, 10V
14mOhm @ 20A, 10V
2.5V @ 250µA
23 nC @ 10 V
±20V
990 pF @ 25 V
-
24W (Tj)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
DFN3333
8-VDFN Exposed Pad
9,648
In Stock
1 : $1.20000
Cut Tape (CT)
5,000 : $0.26724
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
30A (Tc)
4.5V, 10V
10mOhm @ 15A, 10V
2.5V @ 250µA
28 nC @ 10 V
±20V
1020 pF @ 15 V
-
20W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
DFN3333
8-VDFN Exposed Pad
8,147
In Stock
1 : $1.20000
Cut Tape (CT)
5,000 : $0.26724
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
20A
4.5V, 10V
20mOhm @ 10A, 10V
2.5V @ 250µA
28.7 nC @ 10 V
±20V
1750 pF @ 15 V
-
21W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
DFN3333
8-VDFN Exposed Pad
3,512
In Stock
1 : $1.40000
Cut Tape (CT)
5,000 : $0.32232
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
30A (Tc)
4.5V, 20V
13mOhm @ 20A, 20V
2.8V @ 250µA
43.8 nC @ 10 V
±20V
2450 pF @ 15 V
-
32W
-55°C ~ 150°C (TJ)
-
-
Surface Mount
DFN3333
8-VDFN Exposed Pad
TPCC8105,L1Q
PB-F POWER MOSFET TRANSISTOR TSO
Toshiba Semiconductor and Storage
2,754
In Stock
1 : $1.42000
Cut Tape (CT)
5,000 : $0.41832
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
23A (Ta)
4.5V, 10V
7.8mOhm @ 11.5A, 10V
2V @ 500µA
76 nC @ 10 V
+20V, -25V
3240 pF @ 10 V
-
700mW (Ta), 30W (Tc)
150°C
-
-
Surface Mount
8-TSON Advance (3.3x3.3)
8-VDFN Exposed Pad
8,360
In Stock
1 : $1.98000
Cut Tape (CT)
5,000 : $0.50620
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
40A (Tc)
4.5V, 10V
18.5mOhm @ 20A, 10V
2.5V @ 250µA
16 nC @ 10 V
±20V
1220 pF @ 10 V
-
43W (Tj)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
DFN3333
8-VDFN Exposed Pad
866
In Stock
1 : $1.98000
Cut Tape (CT)
5,000 : $0.48292
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
53A
4.5V, 10V
8.2mOhm @ 20A, 10V
2.5V @ 250µA
34 nC @ 10 V
±20V
2000 pF @ 35 V
-
45W
-55°C ~ 150°C (TJ)
-
-
Surface Mount
DFN3333
8-VDFN Exposed Pad
9,420
In Stock
1 : $2.11000
Cut Tape (CT)
5,000 : $0.52195
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
50A
4.5V, 10V
6.2mOhm @ 15A, 10V
2.8V @ 250µA
111.7 nC @ 10 V
±25V
6464 pF @ 15 V
-
83W
-55°C ~ 150°C (TJ)
-
-
Surface Mount
DFN3333
8-VDFN Exposed Pad
7,593
In Stock
1 : $2.30000
Cut Tape (CT)
5,000 : $0.66369
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
25A
4.5V, 10V
50mOhm @ 20A, 10V
2.7V @ 250µA
18.7 nC @ 10 V
±20V
1100 pF @ 30 V
-
60W (Tj)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
DFN3333
8-VDFN Exposed Pad
2,350
In Stock
1 : $2.75000
Cut Tape (CT)
5,000 : $0.71423
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
55A
1.8V, 4.5V
8.3mOhm @ 15A, 4.5V
1V @ 250µA
149 nC @ 10 V
±10V
6358 pF @ 10 V
-
3.2W (Ta), 38W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
DFN3333
8-VDFN Exposed Pad
8-VDFN Exposed Pad
650 V, 140 MOHM GALLIUM NITRIDE
Nexperia USA Inc.
2,375
In Stock
1 : $14.92000
Cut Tape (CT)
2,500 : $3.96576
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
650 V
17A (Tc)
6V
140mOhm @ 5A, 6V
2.5V @ 17.2mA
3.5 nC @ 6 V
+7V, -1.4V
125 pF @ 400 V
-
113W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount, Wettable Flank
DFN8080-8
8-VDFN Exposed Pad
4,198
In Stock
1 : $1.40000
Cut Tape (CT)
5,000 : $0.32232
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
50A (Tc)
4.5V, 10V
6mOhm @ 15A, 10V
2.5V @ 250µA
28 nC @ 10 V
±20V
2150 pF @ 15 V
-
30W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
DFN3333
8-VDFN Exposed Pad
9,995
In Stock
1 : $1.46000
Cut Tape (CT)
5,000 : $0.37959
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
35A (Tc)
4.5V, 10V
8mOhm @ 20A, 10V
2.5V @ 250µA
23 nC @ 10 V
±20V
2000 pF @ 25 V
-
40W (Tj)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
DFN3333
8-VDFN Exposed Pad
6,852
In Stock
1 : $1.61000
Cut Tape (CT)
5,000 : $0.37605
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
20A (Tc)
4.5V, 10V
14mOhm @ 20A, 10V
2.5V @ 250µA
15 nC @ 10 V
±20V
750 pF @ 20 V
-
2.34W (Ta), 21W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
DFN3333
8-VDFN Exposed Pad
14,901
In Stock
1 : $2.19000
Cut Tape (CT)
5,000 : $0.54444
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
50A
4.5V, 10V
4mOhm @ 20A, 10V
2.5V @ 250µA
102 nC @ 20 V
±20V
4645 pF @ 20 V
-
75W
-55°C ~ 150°C (TJ)
-
-
Surface Mount
DFN3333
8-VDFN Exposed Pad
9,635
In Stock
1 : $2.44000
Cut Tape (CT)
5,000 : $0.82795
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
60A (Tc)
4.5V, 10V
6mOhm @ 20A, 10V
2.5V @ 250µA
34.5 nC @ 10 V
±20V
1666 pF @ 30 V
-
60W (Tj)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
DFN3333
8-VDFN Exposed Pad
4,990
In Stock
1 : $0.96000
Cut Tape (CT)
5,000 : $0.20547
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
45A (Tc)
4.5V, 10V
5.9mOhm @ 20A, 10V
2.5V @ 250µA
12.4 nC @ 10 V
±20V
594 pF @ 15 V
-
22W (Tj)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
DFN3333
8-VDFN Exposed Pad
6,082
In Stock
1 : $1.24000
Cut Tape (CT)
5,000 : $0.27839
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
35A (Tc)
4.5V, 10V
9mOhm @ 20A, 10V
2.5V @ 250µA
54 nC @ 10 V
±20V
2718 pF @ 15 V
-
62.5W (Tj)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
DFN3333
8-VDFN Exposed Pad
Showing
of 108

Single FET, MOSFETs


Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

  • Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
  • Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

  1. High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
  2. Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
  3. High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.