48A (Tc) Single FETs, MOSFETs

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of 133

Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
SIR871DP-T1-GE3 MOSFET P-CH 100V 48A PPAK SO-8 Vishay Siliconix	13,257 In Stock	1 : $4.32000 Cut Tape (CT) 3,000 : $1.29079 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	100 V	48A (Tc)	4.5V, 10V	20mOhm @ 20A, 10V	2.6V @ 250µA	90 nC @ 10 V	±20V	3395 pF @ 50 V	-	89W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
IPB60R060P7ATMA1 MOSFET N-CH 600V 48A D2PAK Infineon Technologies	1,142 In Stock	1 : $8.62000 Cut Tape (CT) 1,000 : $3.28219 Tape & Reel (TR)	CoolMOS™ P7	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	600 V	48A (Tc)	10V	60mOhm @ 15.9A, 10V	4V @ 800µA	67 nC @ 10 V	±20V	2895 pF @ 400 V	-	164W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXTH48P20P MOSFET P-CH 200V 48A TO247 IXYS	2,842 In Stock	1 : $20.30000 Tube	PolarP™	Tube	Active	P-Channel	MOSFET (Metal Oxide)	200 V	48A (Tc)	10V	85mOhm @ 500mA, 10V	4.5V @ 250µA	103 nC @ 10 V	±20V	5400 pF @ 25 V	-	462W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247 (IXTH)	TO-247-3
TPH7R204PL,LQ MOSFET N-CH 40V 48A 8SOP Toshiba Semiconductor and Storage	17,710 In Stock	1 : $1.83000 Cut Tape (CT) 3,000 : $0.44812 Tape & Reel (TR)	U-MOSIX-H	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	40 V	48A (Tc)	4.5V, 10V	9.7mOhm @ 15A, 4.5V	2.4V @ 200µA	24 nC @ 10 V	±20V	2040 pF @ 20 V	-	69W (Tc)	175°C (TJ)	-	-	Surface Mount	8-SOP Advance (5x5)	8-PowerVDFN
SQJ418EP-T1_GE3 MOSFET N-CH 100V 48A PPAK SO-8 Vishay Siliconix	2,969 In Stock	1 : $2.65000 Cut Tape (CT) 3,000 : $0.71465 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	48A (Tc)	10V	14mOhm @ 10A, 10V	3.5V @ 250µA	35 nC @ 10 V	±20V	1700 pF @ 25 V	-	68W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
SQD50P08-28_GE3 MOSFET P-CH 80V 48A TO252AA Vishay Siliconix	3,728 In Stock	1 : $5.32000 Cut Tape (CT) 2,000 : $1.71400 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	80 V	48A (Tc)	10V	28mOhm @ 12.5A, 10V	3.5V @ 250µA	145 nC @ 10 V	±20V	6035 pF @ 25 V	-	136W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
NDP6060L MOSFET N-CH 60V 48A TO220-3 onsemi	1,085 In Stock	1 : $6.25000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	60 V	48A (Tc)	5V, 10V	20mOhm @ 24A, 10V	2V @ 250µA	60 nC @ 5 V	±16V	2000 pF @ 25 V	-	100W (Tc)	-65°C ~ 175°C (TJ)	-	-	Through Hole	TO-220-3	TO-220-3
IXTY48P05T MOSFET P-CH 50V 48A TO252 IXYS	1,224 In Stock	1 : $7.79000 Tube	TrenchP™	Tube	Active	P-Channel	MOSFET (Metal Oxide)	50 V	48A (Tc)	10V	30mOhm @ 24A, 10V	4.5V @ 250µA	53 nC @ 10 V	±15V	3660 pF @ 25 V	-	150W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
IPA60R060P7XKSA1 MOSFET N-CHANNEL 600V 48A TO220 Infineon Technologies	726 In Stock	1 : $8.36000 Tube	CoolMOS™ P7	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	48A (Tc)	10V	60mOhm @ 15.9A, 10V	4V @ 800µA	67 nC @ 10 V	±20V	2895 pF @ 400 V	-	29W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO220-FP	TO-220-3 Full Pack
IPP60R060P7XKSA1 MOSFET N-CH 600V 48A TO220-3 Infineon Technologies	869 In Stock	1 : $8.36000 Tube	CoolMOS™ P7	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	48A (Tc)	10V	60mOhm @ 15.9A, 10V	4V @ 800µA	67 nC @ 10 V	±20V	2895 pF @ 400 V	-	164W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO220-3	TO-220-3
IPT60R055CM8XTMA1 IPT60R055CM8XTMA1 Infineon Technologies	1,260 In Stock	1 : $8.85000 Cut Tape (CT) 2,000 : $3.39646 Tape & Reel (TR)	CoolMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	600 V	48A (Tc)	10V	55mOhm @ 18.2A, 10V	4.7V @ 440µA	51 nC @ 10 V	±20V	2245 pF @ 400 V	-	278W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-HSOF-8	8-PowerSFN
EPC2308ENGRT TRANS GAN 150V .006OHM 3X5PQFN EPC	45,865 In Stock	1 : $9.44000 Cut Tape (CT) 3,000 : $3.78949 Tape & Reel (TR)	eGaN®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	GaNFET (Gallium Nitride)	150 V	48A (Tc)	5V	6mOhm @ 15A, 5V	2.5V @ 5mA	13.8 nC @ 5 V	+6V, -4V	2103 pF @ 75 V	-	-	-40°C ~ 150°C (TJ)	-	-	Surface Mount	7-QFN (3x5)	7-PowerWQFN
IMZA120R040M2HXKSA1 IMZA120R040M2HXKSA1 Infineon Technologies	286 In Stock	1 : $15.73000 Tube	CoolSiC™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	48A (Tc)	15V, 18V	51mOhm @ 18A, 18V	5.1V @ 5.5mA	39 nC @ 18 V	+23V, -7V	1310 pF @ 800 V	-	218W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO247-4-8	TO-247-4
IXTT48P20P MOSFET P-CH 200V 48A TO268 IXYS	230 In Stock	1 : $24.79000 Tube	PolarP™	Tube	Active	P-Channel	MOSFET (Metal Oxide)	200 V	48A (Tc)	10V	85mOhm @ 500mA, 10V	4.5V @ 250µA	103 nC @ 10 V	±20V	5400 pF @ 25 V	-	462W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-268AA	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
TPH4R803PL,LQ MOSFET N-CH 30V 48A 8SOP Toshiba Semiconductor and Storage	4,921 In Stock	1 : $2.09000 Cut Tape (CT) 3,000 : $0.52479 Tape & Reel (TR)	U-MOSIX-H	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	48A (Tc)	4.5V, 10V	4.8mOhm @ 24A, 10V	2.1V @ 200µA	22 nC @ 10 V	±20V	1975 pF @ 15 V	-	830mW (Ta), 69W (Tc)	175°C	-	-	Surface Mount	8-SOP Advance (5x5)	8-PowerVDFN
SQJ418EP-T1_BE3 N-CHANNEL 100-V (D-S) 175C MOSFE Vishay Siliconix	5,950 In Stock	1 : $2.65000 Cut Tape (CT) 3,000 : $0.71465 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	48A (Tc)	10V	14mOhm @ 10A, 10V	3.5V @ 250µA	35 nC @ 10 V	±20V	1700 pF @ 25 V	-	68W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
NDP6060 MOSFET N-CH 60V 48A TO220-3 onsemi	713 In Stock	1 : $5.92000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	60 V	48A (Tc)	10V	25mOhm @ 24A, 10V	4V @ 250µA	70 nC @ 10 V	±20V	1800 pF @ 25 V	-	100W (Tc)	-65°C ~ 175°C (TJ)	-	-	Through Hole	TO-220-3	TO-220-3
IXTP48P05T MOSFET P-CH 50V 48A TO220AB IXYS	270 In Stock 1,000 Factory	1 : $7.96000 Tube	TrenchP™	Tube	Active	P-Channel	MOSFET (Metal Oxide)	50 V	48A (Tc)	10V	30mOhm @ 24A, 10V	4.5V @ 250µA	53 nC @ 10 V	±15V	3660 pF @ 25 V	-	150W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220-3	TO-220-3
SIHP052N60EF-GE3 MOSFET EF SERIES TO-220AB Vishay Siliconix	896 In Stock	1 : $11.48000 Tube	EF	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	48A (Tc)	10V	52mOhm @ 23A, 10V	5V @ 250µA	101 nC @ 10 V	±30V	3380 pF @ 100 V	-	278W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220AB	TO-220-3
SIHG052N60EF-GE3 MOSFET N-CH 600V 48A TO247AC Vishay Siliconix	104 In Stock	1 : $12.16000 Tube	EF	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	48A (Tc)	10V	52mOhm @ 23A, 10V	5V @ 250µA	101 nC @ 10 V	±30V	3380 pF @ 100 V	-	278W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247AC	TO-247-3
IXTH48N65X2 MOSFET N-CH 650V 48A TO247 IXYS	450 In Stock	1 : $17.11000 Tube	Ultra X2	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	48A (Tc)	10V	68mOhm @ 24A, 10V	4.5V @ 4mA	77 nC @ 10 V	±30V	4420 pF @ 25 V	-	660W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247 (IXTH)	TO-247-3
APT30M70BVRG MOSFET N-CH 300V 48A TO247 Microchip Technology	149 In Stock	1 : $21.10000 Tube	POWER MOS V®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	300 V	48A (Tc)	10V	70mOhm @ 500mA, 10V	4V @ 1mA	225 nC @ 10 V	±30V	5870 pF @ 25 V	-	370W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247 [B]	TO-247-3
DI048N04PT-AQ MOSFET, POWERQFN 3X3, 40V, 48A, Diotec Semiconductor	4,129 In Stock	1 : $1.39000 Cut Tape (CT) 5,000 : $0.31289 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	40 V	48A (Tc)	4.5V, 10V	7.6mOhm @ 12A, 10V	2.5V @ 250µA	48.5 nC @ 10 V	±20V	2268 pF @ 25 V	-	31W (Tc)	-55°C ~ 150°C (TJ)	Automotive	AEC-Q101	Surface Mount	8-QFN (3x3)	8-PowerVDFN
CSD17551Q5A MOSFET N-CH 30V 48A 8VSON Texas Instruments	5,903 In Stock	1 : $2.25000 Cut Tape (CT) 2,500 : $0.60299 Tape & Reel (TR)	NexFET™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	48A (Tc)	4.5V, 10V	8.8mOhm @ 11A, 10V	2.2V @ 250µA	7.2 nC @ 4.5 V	±20V	1272 pF @ 15 V	-	3W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-VSONP (5x6)	8-PowerTDFN
IXTA48P05T MOSFET P-CH 50V 48A TO263 IXYS	3,290 In Stock 500 Factory	1 : $8.36000 Tube	TrenchP™	Tube	Active	P-Channel	MOSFET (Metal Oxide)	50 V	48A (Tc)	10V	30mOhm @ 24A, 10V	4.5V @ 250µA	53 nC @ 10 V	±15V	3660 pF @ 25 V	-	150W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263AA	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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Single FET, MOSFETs

Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

n-channel MOSFETs: where electrons are the primary carriers.
p-channel MOSFETs: where holes are the primary carriers.

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.

Single FET, MOSFETs

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