46A (Tc) Single FETs, MOSFETs

Showing

of 97

Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
SI7463ADP-T1-GE3 MOSFET P-CH 40V 46A PPAK SO-8 Vishay Siliconix	18,153 In Stock	1 : $2.01000 Cut Tape (CT) 3,000 : $0.73327 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	40 V	46A (Tc)	4.5V, 10V	10mOhm @ 15A, 10V	2.3V @ 250µA	144 nC @ 10 V	±20V	4150 pF @ 20 V	-	5W (Ta), 39W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
SQJA84EP-T1_GE3 MOSFET N-CH 80V 46A PPAK SO-8 Vishay Siliconix	9,023 In Stock	1 : $2.19000 Cut Tape (CT) 3,000 : $0.70478 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	80 V	46A (Tc)	4.5V, 10V	12.5mOhm @ 10A, 10V	2.5V @ 250µA	35 nC @ 10 V	±20V	2100 pF @ 25 V	-	55W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
TK6R7P06PL,RQ MOSFET N-CHANNEL 60V 46A DPAK Toshiba Semiconductor and Storage	4,235 In Stock	1 : $2.37000 Cut Tape (CT) 2,500 : $0.70696 Tape & Reel (TR)	U-MOSIX-H	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	46A (Tc)	4.5V, 10V	6.7mOhm @ 23A, 10V	2.5V @ 300µA	26 nC @ 10 V	±20V	1990 pF @ 30 V	-	66W (Tc)	175°C	-	-	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63
IPB65R045C7ATMA2 MOSFET N-CH 650V 46A TO263-3 Infineon Technologies	5,919 In Stock	1 : $14.62000 Cut Tape (CT) 1,000 : $6.68459 Tape & Reel (TR)	CoolMOS™ C7	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	650 V	46A (Tc)	10V	45mOhm @ 24.9A, 10V	4V @ 1.25mA	93 nC @ 10 V	±20V	4340 pF @ 400 V	-	227W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
NTHL060N090SC1 SICFET N-CH 900V 46A TO247-3 onsemi	2,653 In Stock 33,300 Factory	1 : $17.89000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	900 V	46A (Tc)	15V	84mOhm @ 20A, 15V	4.3V @ 5mA	87 nC @ 15 V	+19V, -10V	1770 pF @ 450 V	-	221W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-3	TO-247-3
STD46P4LLF6 MOSFET P-CH 40V 46A DPAK STMicroelectronics	1,112 In Stock	1 : $1.22000 Cut Tape (CT) 2,500 : $0.87557 Tape & Reel (TR)	STripFET™ F6	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	40 V	46A (Tc)	4.5V, 10V	15mOhm @ 23A, 10V	2.5V @ 250µA	34 nC @ 4.5 V	±20V	3525 pF @ 25 V	-	70W (Tc)	175°C (TJ)	-	-	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63
SI4136DY-T1-GE3 MOSFET N-CH 20V 46A 8SO Vishay Siliconix	1,431 In Stock	1 : $1.92000 Cut Tape (CT) 2,500 : $0.94375 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	20 V	46A (Tc)	4.5V, 10V	2mOhm @ 15A, 10V	2.2V @ 250µA	110 nC @ 10 V	±20V	4560 pF @ 10 V	-	3.5W (Ta), 7.8W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
BSC097N06NSATMA1 MOSFET N-CH 60V 46A TDSON-8-6 Infineon Technologies	16,582 In Stock	1 : $2.15000 Cut Tape (CT) 5,000 : $0.51204 Tape & Reel (TR)	OptiMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	46A (Tc)	6V, 10V	9.7mOhm @ 40A, 10V	3.3V @ 14µA	15 nC @ 10 V	±20V	1075 pF @ 30 V	-	2.5W (Ta), 36W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TDSON-8-6	8-PowerTDFN
SQJA81EP-T1_GE3 MOSFET P-CH 80V 46A PPAK SO-8 Vishay Siliconix	2,838 In Stock	1 : $4.39000 Cut Tape (CT) 3,000 : $1.41719 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	80 V	46A (Tc)	4.5V, 10V	17.3mOhm @ 10A, 10V	2.5V @ 250µA	80 nC @ 10 V	±20V	5900 pF @ 25 V	-	68W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
IRFB4229PBF MOSFET N-CH 250V 46A TO220AB Infineon Technologies	1,007 In Stock	1 : $4.96000 Tube	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	250 V	46A (Tc)	10V	46mOhm @ 26A, 10V	5V @ 250µA	110 nC @ 10 V	±30V	4560 pF @ 25 V	-	330W (Tc)	-40°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB	TO-220-3
IPW65R045C7FKSA1 MOSFET N-CH 650V 46A TO247-3 Infineon Technologies	2,110 In Stock	1 : $11.00000 Tube	CoolMOS™ C7	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	46A (Tc)	10V	45mOhm @ 24.9A, 10V	4V @ 1.25mA	93 nC @ 10 V	±20V	4340 pF @ 400 V	-	227W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO247-3-1	TO-247-3
IMZA65R040M2HXKSA1 SILICON CARBIDE MOSFET Infineon Technologies	551 In Stock	1 : $13.31000 Tube	CoolSiC™ Gen 2	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	46A (Tc)	15V, 20V	36mOhm @ 22.9A, 20V	5.6V @ 4.6mA	28 nC @ 18 V	+23V, -7V	997 pF @ 400 V	-	172W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO247-4-8	TO-247-4
IPZ65R045C7XKSA1 MOSFET N-CH 650V 46A TO247 Infineon Technologies	419 In Stock	1 : $17.17000 Tube	CoolMOS™ C7	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	46A (Tc)	10V	45mOhm @ 24.9A, 10V	4V @ 1.25mA	93 nC @ 10 V	±20V	4340 pF @ 400 V	-	227W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO247	TO-247-4
STW65N80K5 MOSFET N-CH 800V 46A TO247 STMicroelectronics	554 In Stock	1 : $17.77000 Tube	MDmesh™ K5	Tube	Active	N-Channel	MOSFET (Metal Oxide)	800 V	46A (Tc)	10V	80mOhm @ 23A, 10V	5V @ 100µA	92 nC @ 10 V	±30V	3230 pF @ 100 V	-	446W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247-3	TO-247-3
STL60N10F7 MOSFET N-CH 100V 46A POWERFLAT STMicroelectronics	13,295 In Stock	1 : $1.01000 Cut Tape (CT) 3,000 : $0.85923 Tape & Reel (TR)	DeepGATE™, STripFET™ VII	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	46A (Tc)	10V	18mOhm @ 6A, 10V	4.5V @ 250µA	25 nC @ 10 V	20V	1640 pF @ 50 V	-	5W (Ta), 72W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PowerFlat™ (5x6)	8-PowerVDFN
PSMN014-40YS,115 MOSFET N-CH 40V 46A LFPAK56 Nexperia USA Inc.	15,110 In Stock	1 : $1.95000 Cut Tape (CT) 1,500 : $0.52838 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	40 V	46A (Tc)	10V	14mOhm @ 5A, 10V	4V @ 1mA	12 nC @ 10 V	±20V	702 pF @ 20 V	-	56W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
STF100N6F7 MOSFET N-CH 60V 46A TO220FP STMicroelectronics	299 In Stock	1 : $2.64000 Tube	STripFET™ F7	Tube	Active	N-Channel	MOSFET (Metal Oxide)	60 V	46A (Tc)	10V	5.6mOhm @ 23A, 10V	4V @ 250µA	30 nC @ 10 V	±20V	1980 pF @ 25 V	-	25W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220FP	TO-220-3 Full Pack
BUK9Y19-55B,115 MOSFET N-CH 55V 46A LFPAK56 Nexperia USA Inc.	584 In Stock	1 : $2.97000 Cut Tape (CT) 1,500 : $0.84843 Tape & Reel (TR)	TrenchMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	55 V	46A (Tc)	5V	17.3mOhm @ 20A, 10V	2V @ 1mA	18 nC @ 5 V	±15V	1992 pF @ 25 V	-	85W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
TSM160N10LCR RLG MOSFET N-CH 100V 46A 8PDFN Taiwan Semiconductor Corporation	10,211 In Stock	1 : $3.04000 Cut Tape (CT) 2,500 : $1.03438 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	46A (Tc)	4.5V, 10V	16mOhm @ 8A, 10V	2.5V @ 250µA	73 nC @ 10 V	±20V	4431 pF @ 50 V	-	83W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-PDFN (5x6)	8-PowerTDFN
IPA082N10NF2SXKSA1 TRENCH >=100V PG-TO220-3 Infineon Technologies	393 In Stock	1 : $3.28000 Tube	StrongIRFET™ 2	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	46A (Tc)	6V, 10V	8.2mOhm @ 30A, 10V	3.8V @ 46µA	42 nC @ 10 V	±20V	2000 pF @ 50 V	-	35W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO220 Full Pack	TO-220-3 Full Pack
IRFP260PBF MOSFET N-CH 200V 46A TO247-3 Vishay Siliconix	204 In Stock	1 : $4.46000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	200 V	46A (Tc)	10V	55mOhm @ 28A, 10V	4V @ 250µA	230 nC @ 10 V	±20V	5200 pF @ 25 V	-	280W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247AC	TO-247-3
IMW65R039M1HXKSA1 SILICON CARBIDE MOSFET, PG-TO247 Infineon Technologies	119 In Stock	1 : $14.02000 Tube	CoolSiC™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	46A (Tc)	18V	50mOhm @ 25A, 18V	5.7V @ 7.5mA	41 nC @ 18 V	+20V, -2V	1393 pF @ 400 V	-	176W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO247-3-41	TO-247-3
IPP65R045C7XKSA1 MOSFET N-CH 650V 46A TO220-3 Infineon Technologies	543 In Stock	1 : $15.61000 Tube	CoolMOS™ C7	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	46A (Tc)	10V	45mOhm @ 24.9A, 10V	4V @ 1.25mA	93 nC @ 10 V	±20V	4340 pF @ 400 V	-	227W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO220-3	TO-220-3
NTHL065N65S3F MOSFET N-CH 650V 46A TO247-3 onsemi	5,571 In Stock 62,550 Factory	1 : $17.96000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	46A (Tc)	10V	65mOhm @ 23A, 10V	5V @ 4.6mA	98 nC @ 10 V	±30V	4075 pF @ 400 V	-	337W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247-3	TO-247-3
NVHL060N090SC1 SICFET N-CH 900V 46A TO247-3 onsemi	163 In Stock 59,400 Factory	1 : $23.10000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	900 V	46A (Tc)	15V	84mOhm @ 20A, 15V	4.3V @ 5mA	87 nC @ 15 V	+19V, -10V	1770 pF @ 450 V	-	221W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247-3	TO-247-3

Showing

of 97

Single FET, MOSFETs

Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

n-channel MOSFETs: where electrons are the primary carriers.
p-channel MOSFETs: where holes are the primary carriers.

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.

Single FET, MOSFETs

INFORMATION

HELP

CONTACT US

FOLLOW US