3.4A (Tc) Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
SI3453DV-T1-GE3 MOSFET P-CHANNEL 30V 3.4A 6TSOP Vishay Siliconix	2,658 In Stock	1 : $0.80000 Cut Tape (CT) 3,000 : $0.17648 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	30 V	3.4A (Tc)	4.5V, 10V	165mOhm @ 2.5A, 10V	2.5V @ 250µA	6.8 nC @ 10 V	±20V	155 pF @ 15 V	-	3W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	6-TSOP	SOT-23-6 Thin, TSOT-23-6
IGD70R500D2SAUMA1 HV GAN DISCRETES Infineon Technologies	2,380 In Stock	1 : $2.68000 Cut Tape (CT) 2,500 : $0.73879 Tape & Reel (TR)	CoolGaN™ G5	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	GaNFET (Gallium Nitride)	700 V	3.4A (Tc)	-	-	1.6V @ 290µA	-	-10V	39 pF @ 400 V	-	11W (Tc)	-40°C ~ 150°C (TJ)	-	-	Surface Mount	PG-TO252-3-U03	TO-252-3, DPAK (2 Leads + Tab), SC-63
GT800N10I MOSFET N-CH 100V 3.4A 1.6W 110M( Goford Semiconductor	2,293 In Stock	1 : $0.61000 Cut Tape (CT) 3,000 : $0.13218 Tape & Reel (TR)	GT	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	100 V	3.4A (Tc)	4.5V, 10V	80mOhm @ 2A, 10V	2.5V @ 250µA	5 nC @ 10 V	±20V	210 pF @ 50 V	-	1.7W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
G1K3N10LL MOSFET N-CH 100V 3.4A SOT-23-6L Goford Semiconductor	1,335 In Stock	1 : $0.71000 Cut Tape (CT) 3,000 : $0.15601 Tape & Reel (TR)	TrenchFET®	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	100 V	3.4A (Tc)	4.5V, 10V	130mOhm @ 1A, 10V	2.5V @ 250µA	22 nC @ 10 V	±20V	808 pF @ 50 V	-	2.28W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-6L	SOT-23-6
SFS9634 P-CHANNEL POWER MOSFET Fairchild Semiconductor	10,835 Marketplace	Unavailable Unavailable in your selected currency	-	Bulk	Active	P-Channel	MOSFET (Metal Oxide)	250 V	3.4A (Tc)	10V	1.30Ohm @ 1.7A, 10V	4V @ 250µA	37 nC @ 10 V	±30V	975 pF @ 25 V	-	33W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220F	TO-220-3 Full Pack
FQD5N40TM MOSFET N-CH 400V 3.4A DPAK Fairchild Semiconductor	157,506 Marketplace	Unavailable Unavailable in your selected currency	QFET®	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	400 V	3.4A (Tc)	10V	1.6Ohm @ 1.7A, 10V	5V @ 250µA	13 nC @ 10 V	±30V	460 pF @ 25 V	-	2.5W (Ta), 45W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252 (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
FQPF5P20 MOSFET P-CH 200V 3.4A TO220F onsemi	0 In Stock 32,645 Marketplace	1,000 : $0.84531 Tube	QFET®	Bulk Bulk Tube	Obsolete	P-Channel	MOSFET (Metal Oxide)	200 V	3.4A (Tc)	10V	1.4Ohm @ 1.7A, 10V	5V @ 250µA	13 nC @ 10 V	±30V	430 pF @ 25 V	-	38W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220F-3	TO-220-3 Full Pack
FQU5N40TU POWER FIELD-EFFECT TRANSISTOR, 3 Fairchild Semiconductor	36,535 Marketplace	Unavailable Unavailable in your selected currency	QFET®	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	400 V	3.4A (Tc)	10V	1.6Ohm @ 1.7A, 10V	5V @ 250µA	13 nC @ 10 V	±30V	460 pF @ 25 V	-	2.5W (Ta), 45W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	IPAK	TO-251-3 Short Leads, IPAK, TO-251AA
FQD5N40TM MOSFET N-CH 400V 3.4A DPAK onsemi	0 In Stock	2,500 : $0.47604 Tape & Reel (TR)	QFET®	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	400 V	3.4A (Tc)	10V	1.6Ohm @ 1.7A, 10V	5V @ 250µA	13 nC @ 10 V	±30V	460 pF @ 25 V	-	2.5W (Ta), 45W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
FQD5N40TF MOSFET N-CH 400V 3.4A DPAK onsemi	0 In Stock	2,000 : $0.51680 Tape & Reel (TR)	QFET®	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	400 V	3.4A (Tc)	10V	1.6Ohm @ 1.7A, 10V	5V @ 250µA	13 nC @ 10 V	±30V	460 pF @ 25 V	-	2.5W (Ta), 45W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
MCPF1K4N95SH-BP IC MCC (Micro Commercial Components)	0 In Stock Check Lead Time	5,000 : $1.05803 Bulk	-	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	950 V	3.4A (Tc)	10V	1.49Ohm @ 2.5A, 10V	4V @ 250µA	16 nC @ 10 V	±30V	469 pF @ 100 V	-	46.8W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220F	TO-220-3 Full Pack
IRFI734GPBF MOSFET N-CH 450V 3.4A TO220-3 Vishay Siliconix	0 In Stock	1,000 : $1.34130 Tube	-	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	450 V	3.4A (Tc)	10V	1.2Ohm @ 2A, 10V	4V @ 250µA	45 nC @ 10 V	±20V	680 pF @ 25 V	-	35W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220-3	TO-220-3 Full Pack, Isolated Tab
IRFI624GPBF MOSFET N-CH 250V 3.4A TO220-3 Vishay Siliconix	0 In Stock	1,000 : $1.35966 Tube	-	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	250 V	3.4A (Tc)	10V	1.1Ohm @ 2A, 10V	4V @ 250µA	14 nC @ 10 V	±20V	260 pF @ 25 V	-	30W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220-3	TO-220-3 Full Pack, Isolated Tab
FQPF6N90 MOSFET N-CH 900V 3.4A TO220F onsemi	0 In Stock	1,000 : $1.41452 Tube	QFET®	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	900 V	3.4A (Tc)	10V	1.9Ohm @ 1.7A, 10V	5V @ 250µA	52 nC @ 10 V	±30V	1880 pF @ 25 V	-	56W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220F-3	TO-220-3 Full Pack
IRFI734G MOSFET N-CH 450V 3.4A TO220-3 Vishay Siliconix	0 In Stock	250 : $2.84416 Tube	-	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	450 V	3.4A (Tc)	10V	1.2Ohm @ 2A, 10V	4V @ 250µA	45 nC @ 10 V	±20V	680 pF @ 25 V	-	35W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220-3	TO-220-3 Full Pack, Isolated Tab
FQP4N50 MOSFET N-CH 500V 3.4A TO220-3 onsemi	0 In Stock	Obsolete	QFET®	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	500 V	3.4A (Tc)	10V	2.7Ohm @ 1.7A, 10V	5V @ 250µA	13 nC @ 10 V	±30V	460 pF @ 25 V	-	70W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220-3	TO-220-3
FQU5N40TU MOSFET N-CH 400V 3.4A IPAK onsemi	0 In Stock	Obsolete	QFET®	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	400 V	3.4A (Tc)	10V	1.6Ohm @ 1.7A, 10V	5V @ 250µA	13 nC @ 10 V	±30V	460 pF @ 25 V	-	2.5W (Ta), 45W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	IPAK	TO-251-3 Short Leads, IPAK, TO-251AA
FQB4N50TM MOSFET N-CH 500V 3.4A D2PAK onsemi	0 In Stock	Obsolete	QFET®	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	500 V	3.4A (Tc)	10V	2.7Ohm @ 1.7A, 10V	5V @ 250µA	13 nC @ 10 V	±30V	460 pF @ 25 V	-	3.13W (Ta), 70W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
FDD4N60NZ MOSFET N-CH 600V 3.4A DPAK onsemi	0 In Stock	Obsolete	UniFET-II™	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	600 V	3.4A (Tc)	10V	2.5Ohm @ 1.7A, 10V	5V @ 250µA	10.8 nC @ 10 V	±25V	510 pF @ 25 V	-	114W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
G1K3N10LL MOSFET N-CH 100V 3.4A SOT-23-6L Goford Semiconductor	0 Marketplace	Unavailable Unavailable in your selected currency	-	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	100 V	3.4A (Tc)	4.5V, 10V	130mOhm @ 1A, 10V	2.5V @ 250µA	22 nC @ 10 V	±20V	808 pF @ 50 V	-	2.28W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-6L	SOT-23-6

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Single FET, MOSFETs

Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

n-channel MOSFETs: where electrons are the primary carriers.
p-channel MOSFETs: where holes are the primary carriers.

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.

Single FET, MOSFETs

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