28A (Tc) Single FETs, MOSFETs

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
TO-252AA (DPAK)
MOSFET N-CH 55V 28A DPAK
Infineon Technologies
22,306
In Stock
1 : $1.88000
Cut Tape (CT)
2,000 : $0.43328
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
55 V
28A (Tc)
4V, 10V
40mOhm @ 17A, 10V
2V @ 250µA
25 nC @ 5 V
±16V
880 pF @ 25 V
-
68W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-252AA (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-263
MOSFET N-CH 300V 28A D2PAK
onsemi
3,315
In Stock
1 : $4.49000
Cut Tape (CT)
800 : $1.53610
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
300 V
28A (Tc)
10V
129mOhm @ 14A, 10V
5V @ 250µA
50 nC @ 10 V
±30V
2250 pF @ 25 V
-
250W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SIR401DP-T1-GE3
MOSFET P-CH 100V 28A PPAK SO-8
Vishay Siliconix
28,297
In Stock
1 : $5.17000
Cut Tape (CT)
3,000 : $1.64499
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
100 V
28A (Tc)
4.5V, 10V
41mOhm @ 7.8A, 10V
3V @ 250µA
160 nC @ 10 V
±20V
4600 pF @ 50 V
-
5.2W (Ta), 83W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
SIR401DP-T1-GE3
MOSFET P-CH 80V 28A PPAK SO-8
Vishay Siliconix
53,217
In Stock
1 : $5.19000
Cut Tape (CT)
3,000 : $1.91935
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
80 V
28A (Tc)
4.5V, 10V
25mOhm @ 10.2A, 10V
3V @ 250µA
160 nC @ 10 V
±20V
4700 pF @ 40 V
-
5.2W (Ta), 83.3W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
SIR401DP-T1-GE3
MOSFET P-CH 80V 28A PPAK SO-8
Vishay Siliconix
16,893
In Stock
1 : $5.19000
Cut Tape (CT)
3,000 : $1.65461
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
80 V
28A (Tc)
4.5V, 10V
25mOhm @ 10.2A, 10V
3V @ 250µA
160 nC @ 10 V
±20V
4700 pF @ 40 V
-
5.2W (Ta), 83.3W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
SIR401DP-T1-GE3
MOSFET P-CH 100V 28A PPAK SO-8
Vishay Siliconix
5,685
In Stock
1 : $5.19000
Cut Tape (CT)
3,000 : $1.65461
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
100 V
28A (Tc)
4.5V, 10V
41mOhm @ 7.8A, 10V
3V @ 250µA
160 nC @ 10 V
±20V
4600 pF @ 50 V
-
5.2W (Ta), 83W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
SIR401DP-T1-GE3
MOSFET N-CH 75V 28A PPAK SO-8
Vishay Siliconix
4,475
In Stock
1 : $6.02000
Cut Tape (CT)
3,000 : $2.02016
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
75 V
28A (Tc)
4.5V, 10V
11mOhm @ 15A, 10V
2.5V @ 250µA
100 nC @ 10 V
±20V
2900 pF @ 35 V
-
5.4W (Ta), 96W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
SIS176LDN-T1-GE3
MOSFET N-CH 100V 28A PPAK1212-8
Vishay Siliconix
13,753
In Stock
1 : $2.48000
Cut Tape (CT)
3,000 : $0.65855
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
28A (Tc)
4.5V, 10V
33mOhm @ 10A, 10V
3V @ 250µA
19.5 nC @ 10 V
±20V
550 pF @ 50 V
-
3.7W (Ta), 52W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PowerPAK® 1212-8
PowerPAK® 1212-8
SIR401DP-T1-GE3
MOSFET N-CH 75V 28A PPAK SO-8
Vishay Siliconix
3,609
In Stock
1 : $6.02000
Cut Tape (CT)
3,000 : $2.02016
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
75 V
28A (Tc)
10V
11mOhm @ 15A, 10V
2.5V @ 250µA
100 nC @ 10 V
±20V
2900 pF @ 35 V
-
5.4W (Ta), 96W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
TO-3PN
MOSFET N-CH 500V 28A TO3PN
onsemi
498
In Stock
1 : $8.87000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
500 V
28A (Tc)
10V
155mOhm @ 14A, 10V
5V @ 250µA
105 nC @ 10 V
±30V
5140 pF @ 25 V
-
310W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-3PN
TO-3P-3, SC-65-3
TO-263 (D2PAK)
MOSFET N-CH 600V 28A D2PAK
STMicroelectronics
220
In Stock
1 : $11.85000
Cut Tape (CT)
1,000 : $5.01924
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
28A (Tc)
10V
110mOhm @ 14A, 10V
5V @ 250µA
54 nC @ 10 V
±25V
2400 pF @ 100 V
-
210W (Tc)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
448~P/PG-TO247-4-17~~4
SICFET N-CH 1200V 28A TO247
Infineon Technologies
435
In Stock
1 : $11.91000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
28A (Tc)
15V, 18V
78mOhm @ 9A, 18V
5.1V @ 2.8mA
21 nC @ 18 V
+23V, -7V
700 pF @ 800 V
-
143W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-4-17
TO-247-4
PG-VSON-4
MOSFET N-CH 650V 28A 4VSON
Infineon Technologies
7,682
In Stock
1 : $13.19000
Cut Tape (CT)
3,000 : $5.09332
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
650 V
28A (Tc)
10V
70mOhm @ 8.5A, 10V
4V @ 850µA
64 nC @ 10 V
±20V
3020 pF @ 100 V
-
169W (Tc)
-40°C ~ 150°C (TJ)
-
-
Surface Mount
PG-VSON-4
4-PowerTSFN
TO-247-4L
SICFET N-CH 750V 28A TO247-4
onsemi
305
In Stock
6,600
Factory
1 : $18.95000
Tube
-
Tube
Active
N-Channel
SiCFET (Cascode SiCJFET)
750 V
28A (Tc)
-
74mOhm @ 20A, 12V
6V @ 10mA
37.8 nC @ 15 V
±20V
1422 pF @ 100 V
-
155W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4
TO-247-4
2DB1184Q-13
MOSFET N-CH 40V 28A TO252
Diodes Incorporated
1,551
In Stock
1 : $1.52000
Cut Tape (CT)
2,500 : $0.36922
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
28A (Tc)
4.5V, 10V
24mOhm @ 6A, 10V
3V @ 250µA
21.3 nC @ 10 V
±20V
1181 pF @ 20 V
-
1.6W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-252-3
TO-252-3, DPAK (2 Leads + Tab), SC-63
BUK7626-100B,118
MOSFET N-CH 100V 28A D2PAK
Nexperia USA Inc.
4,934
In Stock
1 : $3.20000
Cut Tape (CT)
800 : $1.03560
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
28A (Tc)
10V
50mOhm @ 14A, 10V
4V @ 1mA
30 nC @ 10 V
±20V
1240 pF @ 25 V
-
107W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
D2PAK
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SI9407BDY-T1-GE3
MOSFET N-CH 30V 28A 8SO
Vishay Siliconix
1,293
In Stock
1 : $4.93000
Cut Tape (CT)
2,500 : $1.53917
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
28A (Tc)
4.5V, 10V
4.2mOhm @ 20A, 10V
3V @ 250µA
100 nC @ 10 V
±20V
3650 pF @ 15 V
-
3W (Ta), 6.25W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
D2PAK
MOSFET N-CH 650V 28A D2PAK
STMicroelectronics
866
In Stock
1 : $8.45000
Cut Tape (CT)
1,000 : $3.19206
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
650 V
28A (Tc)
10V
110mOhm @ 14A, 10V
5V @ 250µA
54 nC @ 10 V
±25V
2400 pF @ 100 V
-
210W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
D2PAK
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
MOSFET N-CH 600V 28A D2PAK
Vishay Siliconix
1,081
In Stock
1 : $10.54000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
28A (Tc)
10V
123mOhm @ 14A, 10V
4V @ 250µA
120 nC @ 10 V
±30V
2714 pF @ 100 V
-
250W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
D2PAK
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-247-3
MOSFET N-CH 650V 28A TO247
STMicroelectronics
430
In Stock
1 : $11.28000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
650 V
28A (Tc)
10V
87mOhm @ 19A, 10V
5V @ 250µA
70 nC @ 10 V
±25V
3200 pF @ 100 V
-
300W (Tc)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Through Hole
TO-247-3
TO-247-3
TO-247-3L
SICFET N-CH 750V 28A TO247-3
onsemi
14,753
In Stock
17,400
Factory
1 : $22.18000
Tube
-
Tube
Active
N-Channel
SiCFET (Cascode SiCJFET)
750 V
28A (Tc)
-
74mOhm @ 20A, 12V
6V @ 10mA
37.8 nC @ 15 V
±20V
1422 pF @ 100 V
-
155W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
SI9407BDY-T1-GE3
MOSFET N-CH 30V 28A 8SO
Vishay Siliconix
1,518
In Stock
1 : $4.93000
Cut Tape (CT)
2,500 : $1.53917
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
28A (Tc)
4.5V, 10V
4.2mOhm @ 20A, 10V
3V @ 250µA
100 nC @ 10 V
±20V
3650 pF @ 15 V
-
3W (Ta), 6.25W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
XP60SL115DR
MOSFET N-CH 600V 28A TO262
YAGEO XSEMI
988
In Stock
1 : $6.86000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
28A (Tc)
10V
115mOhm @ 9.6A, 10V
5V @ 250µA
145 nC @ 10 V
±20V
5120 pF @ 100 V
-
2W (Ta), 178W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-262
TO-262-3 Long Leads, I2PAK, TO-262AA
TO-220-3 Type A
MOSFET N-CH 600V 28A TO220
STMicroelectronics
388
In Stock
1 : $7.08000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
28A (Tc)
10V
110mOhm @ 14A, 10V
5V @ 250µA
54 nC @ 10 V
±25V
2400 pF @ 100 V
-
210W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-220
TO-220-3
2,394
In Stock
1 : $7.10000
Cut Tape (CT)
800 : $2.61083
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
28A (Tc)
10V
196mOhm @ 9.5A, 10V
5V @ 1mA
39 nC @ 10 V
±20V
1566 pF @ 300 V
-
152W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-263AB (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Showing
of 174

Single FET, MOSFETs


Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

  • Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
  • Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

  1. High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
  2. Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
  3. High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.