Single FETs, MOSFETs

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of 45

Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
IXTP10P50P MOSFET P-CH 500V 10A TO220AB IXYS	432 In Stock	1 : $11.72000 Tube	PolarP™	Tube	Active	P-Channel	MOSFET (Metal Oxide)	500 V	10A (Tc)	10V	1Ohm @ 5A, 10V	4V @ 250µA	50 nC @ 10 V	±20V	2840 pF @ 25 V	-	300W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220-3	TO-220-3
IXTA36P15P-TRL MOSFET P-CH 150V 36A TO263 IXYS	7,561 In Stock	1 : $11.97000 Cut Tape (CT) 800 : $5.13186 Tape & Reel (TR)	PolarP™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	150 V	36A (Tc)	10V	110mOhm @ 18A, 10V	4.5V @ 250µA	55 nC @ 10 V	±20V	3100 pF @ 25 V	-	300W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXTA52P10P-TRL MOSFET P-CH 100V 52A TO263 IXYS	1,474 In Stock	1 : $11.97000 Cut Tape (CT) 800 : $5.13186 Tape & Reel (TR)	PolarP™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	100 V	52A (Tc)	10V	50mOhm @ 26A, 10V	4V @ 250µA	60 nC @ 10 V	±20V	2845 pF @ 25 V	-	300W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXTP26P20P MOSFET P-CH 200V 26A TO220AB IXYS	2,270 In Stock 300 Factory	1 : $12.21000 Tube	PolarP™	Tube	Active	P-Channel	MOSFET (Metal Oxide)	200 V	26A (Tc)	10V	170mOhm @ 13A, 10V	4V @ 250µA	56 nC @ 10 V	±20V	2740 pF @ 25 V	-	300W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220-3	TO-220-3
IXTQ52P10P MOSFET P-CH 100V 52A TO3P IXYS	3,671 In Stock 720 Factory	1 : $12.83000 Tube	PolarP™	Tube	Active	P-Channel	MOSFET (Metal Oxide)	100 V	52A (Tc)	10V	50mOhm @ 52A, 10V	4.5V @ 250µA	60 nC @ 10 V	±20V	2845 pF @ 25 V	-	300W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-3P	TO-3P-3, SC-65-3
IXTH90P10P MOSFET P-CH 100V 90A TO247 IXYS	2,660 In Stock	1 : $19.66000 Tube	PolarP™	Tube	Active	P-Channel	MOSFET (Metal Oxide)	100 V	90A (Tc)	10V	25mOhm @ 45A, 10V	4V @ 250µA	120 nC @ 10 V	±20V	5800 pF @ 25 V	-	462W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247 (IXTH)	TO-247-3
IXTH48P20P MOSFET P-CH 200V 48A TO247 IXYS	2,394 In Stock	1 : $19.66000 Tube	PolarP™	Tube	Active	P-Channel	MOSFET (Metal Oxide)	200 V	48A (Tc)	10V	85mOhm @ 500mA, 10V	4.5V @ 250µA	103 nC @ 10 V	±20V	5400 pF @ 25 V	-	462W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247 (IXTH)	TO-247-3
IXTH20P50P MOSFET P-CH 500V 20A TO247 IXYS	1,425 In Stock	1 : $19.66000 Tube	PolarP™	Tube	Active	P-Channel	MOSFET (Metal Oxide)	500 V	20A (Tc)	10V	450mOhm @ 10A, 10V	4V @ 250µA	103 nC @ 10 V	±20V	5120 pF @ 25 V	-	460W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247 (IXTH)	TO-247-3
IXTX40P50P MOSFET P-CH 500V 40A PLUS247-3 IXYS	828 In Stock 300 Factory	1 : $33.45000 Tube	PolarP™	Tube	Active	P-Channel	MOSFET (Metal Oxide)	500 V	40A (Tc)	10V	230mOhm @ 20A, 10V	4V @ 1mA	205 nC @ 10 V	±20V	11500 pF @ 25 V	-	890W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PLUS247™-3	TO-247-3 Variant
IXTX32P60P MOSFET P-CH 600V 32A PLUS247-3 IXYS	348 In Stock	1 : $33.45000 Tube	PolarP™	Tube	Active	P-Channel	MOSFET (Metal Oxide)	600 V	32A (Tc)	10V	350mOhm @ 16A, 10V	4V @ 1mA	196 nC @ 10 V	±20V	11100 pF @ 25 V	-	890W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PLUS247™-3	TO-247-3 Variant
IXTK90P20P MOSFET P-CH 200V 90A TO264 IXYS	1,612 In Stock	1 : $33.70000 Tube	PolarP™	Tube	Active	P-Channel	MOSFET (Metal Oxide)	200 V	90A (Tc)	10V	44mOhm @ 500mA, 10V	4V @ 1mA	205 nC @ 10 V	±20V	12000 pF @ 25 V	-	890W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-264 (IXTK)	TO-264-3, TO-264AA
IXTK170P10P MOSFET P-CH 100V 170A TO264 IXYS	818 In Stock	1 : $33.70000 Tube	PolarP™	Tube	Active	P-Channel	MOSFET (Metal Oxide)	100 V	170A (Tc)	10V	12mOhm @ 500mA, 10V	4V @ 1mA	240 nC @ 10 V	±20V	12600 pF @ 25 V	-	890W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-264 (IXTK)	TO-264-3, TO-264AA
IXTA52P10P MOSFET P-CH 100V 52A TO263 IXYS	3,097 In Stock	1 : $11.97000 Tube	PolarP™	Tube	Active	P-Channel	MOSFET (Metal Oxide)	100 V	52A (Tc)	10V	50mOhm @ 52A, 10V	4.5V @ 250µA	60 nC @ 10 V	±20V	2845 pF @ 25 V	-	300W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263AA	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXTA36P15P MOSFET P-CH 150V 36A TO263 IXYS	1,142 In Stock 350 Factory	1 : $11.97000 Tube	PolarP™	Tube	Active	P-Channel	MOSFET (Metal Oxide)	150 V	36A (Tc)	10V	110mOhm @ 18A, 10V	4.5V @ 250µA	55 nC @ 10 V	±20V	3100 pF @ 25 V	-	300W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263AA	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXTQ26P20P MOSFET P-CH 200V 26A TO3P IXYS	522 In Stock 960 Factory	1 : $12.83000 Tube	PolarP™	Tube	Active	P-Channel	MOSFET (Metal Oxide)	200 V	26A (Tc)	10V	170mOhm @ 13A, 10V	4V @ 250µA	56 nC @ 10 V	±20V	2740 pF @ 25 V	-	300W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-3P	TO-3P-3, SC-65-3
IXTH52P10P MOSFET P-CH 100V 52A TO247 IXYS	631 In Stock	1 : $14.01000 Tube	PolarP™	Tube	Active	P-Channel	MOSFET (Metal Oxide)	100 V	52A (Tc)	10V	50mOhm @ 52A, 10V	4.5V @ 250µA	60 nC @ 10 V	±20V	2845 pF @ 25 V	-	300W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247 (IXTH)	TO-247-3
IXTH10P50P MOSFET P-CH 500V 10A TO247 IXYS	622 In Stock	1 : $14.01000 Tube	PolarP™	Tube	Active	P-Channel	MOSFET (Metal Oxide)	500 V	10A (Tc)	10V	1Ohm @ 5A, 10V	4V @ 250µA	50 nC @ 10 V	±20V	2840 pF @ 25 V	-	300W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247 (IXTH)	TO-247-3
IXTH16P60P MOSFET P-CH 600V 16A TO247 IXYS	523 In Stock 300 Factory	1 : $19.66000 Tube	PolarP™	Tube	Active	P-Channel	MOSFET (Metal Oxide)	600 V	16A (Tc)	10V	720mOhm @ 500mA, 10V	4.5V @ 250µA	92 nC @ 10 V	±20V	5120 pF @ 25 V	-	460W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247 (IXTH)	TO-247-3
IXTT16P60P MOSFET P-CH 600V 16A TO268 IXYS	147 In Stock	1 : $24.01000 Tube	PolarP™	Tube	Active	P-Channel	MOSFET (Metal Oxide)	600 V	16A (Tc)	10V	720mOhm @ 500mA, 10V	4.5V @ 250µA	92 nC @ 10 V	±20V	5120 pF @ 25 V	-	460W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-268AA	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
IXTT20P50P MOSFET P-CH 500V 20A TO268 IXYS	438 In Stock	1 : $24.06000 Tube	PolarP™	Tube	Active	P-Channel	MOSFET (Metal Oxide)	500 V	20A (Tc)	10V	450mOhm @ 10A, 10V	4V @ 250µA	103 nC @ 10 V	±20V	5120 pF @ 25 V	-	460W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-268AA	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
IXTX90P20P MOSFET P-CH 200V 90A PLUS247-3 IXYS	677 In Stock	1 : $33.45000 Tube	PolarP™	Tube	Active	P-Channel	MOSFET (Metal Oxide)	200 V	90A (Tc)	10V	44mOhm @ 22A, 10V	4V @ 1mA	205 nC @ 10 V	±20V	12000 pF @ 25 V	-	890W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PLUS247™-3	TO-247-3 Variant
IXTY2P50PA AUTOMOTIVE GRADE POLARPTM P-CHAN IXYS	730 In Stock	1 : $7.63000 Tube	PolarP™	Tube	Active	P-Channel	MOSFET (Metal Oxide)	500 V	2A (Tc)	10V	4.2Ohm @ 500mA, 10V	4.5V @ 50µA	11.9 nC @ 10 V	±20V	600 pF @ 25 V	-	58W (Tc)	-55°C ~ 150°C (TJ)	Automotive	AEC-Q101	Surface Mount	TO-252	TO-252-3, DPAK (2 Leads + Tab), SC-63
IXTP52P10P MOSFET P-CH 100V 52A TO220AB IXYS	176 In Stock	1 : $11.72000 Tube	PolarP™	Tube	Active	P-Channel	MOSFET (Metal Oxide)	100 V	52A (Tc)	10V	50mOhm @ 52A, 10V	4.5V @ 250µA	60 nC @ 10 V	±20V	2845 pF @ 25 V	-	300W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220-3	TO-220-3
IXTQ36P15P MOSFET P-CH 150V 36A TO3P IXYS	895 In Stock	1 : $12.83000 Tube	PolarP™	Tube	Active	P-Channel	MOSFET (Metal Oxide)	150 V	36A (Tc)	10V	110mOhm @ 18A, 10V	4.5V @ 250µA	55 nC @ 10 V	±20V	3100 pF @ 25 V	-	300W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-3P	TO-3P-3, SC-65-3
IXTK32P60P MOSFET P-CH 600V 32A TO264 IXYS	96 In Stock	1 : $33.70000 Tube	PolarP™	Tube	Active	P-Channel	MOSFET (Metal Oxide)	600 V	32A (Tc)	10V	350mOhm @ 16A, 10V	4V @ 1mA	196 nC @ 10 V	±20V	11100 pF @ 25 V	-	890W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-264 (IXTK)	TO-264-3, TO-264AA

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Single FET, MOSFETs

Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

n-channel MOSFETs: where electrons are the primary carriers.
p-channel MOSFETs: where holes are the primary carriers.

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.

Single FET, MOSFETs

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