Single FETs, MOSFETs

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of 232

Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
IXFH52N30P MOSFET N-CH 300V 52A TO247AD IXYS	349 In Stock	1 : $13.59000 Tube	HiPerFET™, Polar	Tube	Active	N-Channel	MOSFET (Metal Oxide)	300 V	52A (Tc)	10V	66mOhm @ 500mA, 10V	5V @ 4mA	110 nC @ 10 V	±20V	3490 pF @ 25 V	-	400W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247AD (IXFH)	TO-247-3
IXFH26N60P MOSFET N-CH 600V 26A TO247AD IXYS	3,504 In Stock	1 : $15.62000 Tube	HiPerFET™, Polar	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	26A (Tc)	10V	270mOhm @ 500mA, 10V	5V @ 4mA	72 nC @ 10 V	±30V	4150 pF @ 25 V	-	460W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247AD (IXFH)	TO-247-3
IXFH140N10P MOSFET N-CH 100V 140A TO247AD IXYS	439 In Stock	1 : $16.41000 Tube	HiPerFET™, Polar	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	140A (Tc)	10V	11mOhm @ 70A, 10V	5V @ 4mA	155 nC @ 10 V	±20V	4700 pF @ 25 V	-	600W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247AD (IXFH)	TO-247-3
IXFH16N120P MOSFET N-CH 1200V 16A TO247AD IXYS	463 In Stock	1 : $32.39000 Tube	HiPerFET™, Polar	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1200 V	16A (Tc)	10V	950mOhm @ 8A, 10V	6.5V @ 1mA	120 nC @ 10 V	±30V	6900 pF @ 25 V	-	660W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247AD (IXFH)	TO-247-3
IXFK140N30P MOSFET N-CH 300V 140A TO264AA IXYS	121 In Stock	1 : $35.64000 Tube	HiPerFET™, Polar	Tube	Active	N-Channel	MOSFET (Metal Oxide)	300 V	140A (Tc)	10V	24mOhm @ 70A, 10V	5V @ 8mA	185 nC @ 10 V	±20V	14800 pF @ 25 V	-	1040W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-264AA (IXFK)	TO-264-3, TO-264AA
IXFN140N20P MOSFET N-CH 200V 115A SOT227B IXYS	1,194 In Stock	1 : $44.49000 Tube	HiPerFET™, Polar	Tube	Active	N-Channel	MOSFET (Metal Oxide)	200 V	115A (Tc)	10V, 15V	18mOhm @ 70A, 10V	5V @ 4mA	240 nC @ 10 V	±20V	7500 pF @ 25 V	-	680W (Tc)	-55°C ~ 175°C (TJ)	-	-	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXFN64N50P MOSFET N-CH 500V 61A SOT227B IXYS	260 In Stock	1 : $46.06000 Tube	HiPerFET™, Polar	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	61A (Tc)	10V	85mOhm @ 32A, 10V	5.5V @ 8mA	150 nC @ 10 V	±30V	8700 pF @ 25 V	-	700W (Tc)	-55°C ~ 150°C (TJ)	-	-	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXFN140N30P MOSFET N-CH 300V 110A SOT-227B IXYS	710 In Stock	1 : $52.45000 Tube	HiPerFET™, Polar	Tube	Active	N-Channel	MOSFET (Metal Oxide)	300 V	110A (Tc)	10V	24mOhm @ 70A, 10V	5V @ 8mA	185 nC @ 10 V	±20V	14800 pF @ 25 V	-	700W (Tc)	-55°C ~ 150°C (TJ)	-	-	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXFN80N50P MOSFET N-CH 500V 66A SOT227B IXYS	709 In Stock	1 : $53.16000 Tube	HiPerFET™, Polar	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	66A (Tc)	10V	65mOhm @ 500mA, 10V	5V @ 8mA	195 nC @ 10 V	±30V	12700 pF @ 25 V	-	700W (Tc)	-55°C ~ 150°C (TJ)	-	-	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXFN82N60P MOSFET N-CH 600V 72A SOT-227B IXYS	1,048 In Stock	1 : $61.48000 Tube	HiPerFET™, Polar	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	72A (Tc)	10V	75mOhm @ 41A, 10V	5V @ 8mA	240 nC @ 10 V	±30V	23000 pF @ 25 V	-	1040W (Tc)	-55°C ~ 150°C (TJ)	-	-	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXFN60N80P MOSFET N-CH 800V 53A SOT-227B IXYS	302 In Stock	1 : $69.36000 Tube	HiPerFET™, Polar	Tube	Active	N-Channel	MOSFET (Metal Oxide)	800 V	53A (Tc)	10V	140mOhm @ 30A, 10V	5V @ 8mA	250 nC @ 10 V	±30V	18000 pF @ 25 V	-	1040W (Tc)	-55°C ~ 150°C (TJ)	-	-	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXFN300N10P MOSFET N-CH 100V 295A SOT227B IXYS	341 In Stock	1 : $71.16000 Tube	HiPerFET™, Polar	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	295A (Tc)	10V	5.5mOhm @ 50A, 10V	5V @ 8mA	279 nC @ 10 V	±20V	23000 pF @ 25 V	-	1070W (Tc)	-55°C ~ 175°C (TJ)	-	-	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXFN100N50P MOSFET N-CH 500V 90A SOT-227B IXYS	191 In Stock	1 : $71.24000 Tube	HiPerFET™, Polar	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	90A (Tc)	10V	49mOhm @ 50A, 10V	5V @ 8mA	240 nC @ 10 V	±30V	20000 pF @ 25 V	-	1040W (Tc)	-55°C ~ 150°C (TJ)	-	-	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXFB30N120P MOSFET N-CH 1200V 30A PLUS264 IXYS	124 In Stock	1 : $71.42000 Tube	HiPerFET™, Polar	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1200 V	30A (Tc)	10V	350mOhm @ 500mA, 10V	6.5V @ 1mA	310 nC @ 10 V	±20V	22500 pF @ 25 V	-	1250W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PLUS264™	TO-264-3, TO-264AA
IXFN38N100P MOSFET N-CH 1000V 38A SOT-227B IXYS	238 In Stock	1 : $75.44000 Tube	HiPerFET™, Polar	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1000 V	38A (Tc)	10V	210mOhm @ 19A, 10V	6.5V @ 1mA	350 nC @ 10 V	±30V	24000 pF @ 25 V	-	1000W (Tc)	-55°C ~ 150°C (TJ)	-	-	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXFH26N50P MOSFET N-CH 500V 26A TO247AD IXYS	124 In Stock	1 : $14.04000 Tube	HiPerFET™, Polar	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	26A (Tc)	10V	230mOhm @ 13A, 10V	5.5V @ 4mA	60 nC @ 10 V	±30V	3600 pF @ 25 V	-	400W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247AD (IXFH)	TO-247-3
IXFH30N50P MOSFET N-CH 500V 30A TO247AD IXYS	170 In Stock	1 : $15.62000 Tube	HiPerFET™, Polar	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	30A (Tc)	10V	200mOhm @ 15A, 10V	5V @ 4mA	70 nC @ 10 V	±30V	4150 pF @ 25 V	-	460W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247AD (IXFH)	TO-247-3
IXFA6N120P MOSFET N-CH 1200V 6A TO263 IXYS	4,439 In Stock	1 : $17.07000 Tube	HiPerFET™, Polar	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1200 V	6A (Tc)	10V	2.4Ohm @ 500mA, 10V	5V @ 1mA	92 nC @ 10 V	±30V	2830 pF @ 25 V	-	250W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263AA (IXFA)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXFH15N100P MOSFET N-CH 1000V 15A TO247AD IXYS	820 In Stock 330 Factory	1 : $19.33000 Tube	HiPerFET™, Polar	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1000 V	15A (Tc)	10V	760mOhm @ 500mA, 10V	6.5V @ 1mA	97 nC @ 10 V	±30V	5140 pF @ 25 V	-	543W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247AD (IXFH)	TO-247-3
IXFH24N80P MOSFET N-CH 800V 24A TO247AD IXYS	486 In Stock	1 : $20.13000 Tube	HiPerFET™, Polar	Tube	Active	N-Channel	MOSFET (Metal Oxide)	800 V	24A (Tc)	10V	400mOhm @ 12A, 10V	5V @ 4mA	105 nC @ 10 V	±30V	7200 pF @ 25 V	-	650W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247AD (IXFH)	TO-247-3
IXFT96N20P MOSFET N-CH 200V 96A TO268 IXYS	183 In Stock	1 : $20.76000 Tube	HiPerFET™, Polar	Tube	Active	N-Channel	MOSFET (Metal Oxide)	200 V	96A (Tc)	10V	24mOhm @ 500mA, 10V	5V @ 4mA	145 nC @ 10 V	±20V	4800 pF @ 25 V	-	600W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-268AA	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
IXFH100N25P MOSFET N-CH 250V 100A TO247AD IXYS	308 In Stock	1 : $21.53000 Tube	HiPerFET™, Polar	Tube	Active	N-Channel	MOSFET (Metal Oxide)	250 V	100A (Tc)	10V	27mOhm @ 50A, 10V	5V @ 4mA	185 nC @ 10 V	±20V	6300 pF @ 25 V	-	600W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247 (IXTH)	TO-247-3
IXFK44N50P MOSFET N-CH 500V 44A TO264AA IXYS	593 In Stock 825 Factory	1 : $21.78000 Tube	HiPerFET™, Polar	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	44A (Tc)	10V	140mOhm @ 22A, 10V	5V @ 4mA	98 nC @ 10 V	±30V	5440 pF @ 25 V	-	658W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-264AA (IXFK)	TO-264-3, TO-264AA
IXFK200N10P MOSFET N-CH 100V 200A TO264AA IXYS	226 In Stock	1 : $30.75000 Tube	HiPerFET™, Polar	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	200A (Tc)	10V	7.5mOhm @ 100A, 10V	5V @ 8mA	235 nC @ 10 V	±20V	7600 pF @ 25 V	-	830W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-264AA (IXFK)	TO-264-3, TO-264AA
IXFK64N60P MOSFET N-CH 600V 64A TO264AA IXYS	384 In Stock	1 : $35.64000 Tube	HiPerFET™, Polar	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	64A (Tc)	10V	96mOhm @ 500mA, 10V	5V @ 8mA	200 nC @ 10 V	±30V	12000 pF @ 25 V	-	1040W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-264AA (IXFK)	TO-264-3, TO-264AA

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Single FET, MOSFETs

Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

n-channel MOSFETs: where electrons are the primary carriers.
p-channel MOSFETs: where holes are the primary carriers.

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.

Single FET, MOSFETs

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