Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

UF3SC065007K4S MOSFET N-CH 650V 120A TO247-4 Qorvo	2,105 In Stock	1 : $107.18000 Tube	-	Tube	Active	N-Channel	SiCFET (Cascode SiCJFET)	650 V	120A (Tc)	12V	9mOhm @ 50A, 12V	6V @ 10mA	214 nC @ 15 V	±20V	8360 pF @ 100 V	-	789W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-4	TO-247-4
STY145N65M5 MOSFET N-CH 650V 138A MAX247 STMicroelectronics	9 In Stock	1 : $62.72000 Tube	MDmesh™ V	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	138A (Tc)	10V	15mOhm @ 69A, 10V	5V @ 250µA	414 nC @ 10 V	±25V	18500 pF @ 100 V	-	625W (Tc)	150°C (TJ)	Through Hole	MAX247™	TO-247-3
SCT2080KEGC11 MOSFET N-CH 1200V 40A TO247N Rohm Semiconductor	0 In Stock Check Lead Time	1 : $36.04000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	40A (Tc)	18V	117mOhm @ 10A, 18V	4V @ 4.4mA	106 nC @ 18 V	+22V, -6V	2080 pF @ 800 V	-	262W (Tc)	175°C (TJ)	Through Hole	TO-247N	TO-247-3
2N7000TA MOSFET N-CH 60V 200MA TO92-3 onsemi	0 In Stock Check Lead Time	1 : $0.50000 Cut Tape (CT) 2,000 : $0.13662 Tape & Box (TB)	-	Cut Tape (CT) Tape & Box (TB)	Active	N-Channel	MOSFET (Metal Oxide)	60 V	200mA (Tc)	4.5V, 10V	5Ohm @ 500mA, 10V	3V @ 1mA	-	±20V	50 pF @ 25 V	-	400mW (Ta)	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
IXTX120N65X2 MOSFET N-CH 650V 120A PLUS247-3 IXYS	1 In Stock	1 : $33.45000 Tube	Ultra X2	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	120A (Tc)	10V	24mOhm @ 60A, 10V	4.5V @ 8mA	240 nC @ 10 V	±30V	13600 pF @ 25 V	-	1250W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	PLUS247™-3	TO-247-3 Variant

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.