Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
NTBLS4D0N15MC MOSFET N-CH 150V 19A/187A 8HPSOF onsemi	2,960 In Stock	1 : $5.48000 Cut Tape (CT) 2,000 : $4.35476 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	150 V	19A (Ta), 187A (Tc)	8V, 10V	4.4mOhm @ 80A, 10V	4.5V @ 584µA	90.4 nC @ 10 V	±20V	7490 pF @ 75 V	-	3.4W (Ta), 316W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	8-HPSOF	8-PowerSFN
STW65N80K5 MOSFET N-CH 800V 46A TO247 STMicroelectronics	554 In Stock	1 : $17.61000 Tube	MDmesh™ K5	Tube	Active	N-Channel	MOSFET (Metal Oxide)	800 V	46A (Tc)	10V	80mOhm @ 23A, 10V	5V @ 100µA	92 nC @ 10 V	±30V	3230 pF @ 100 V	-	446W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247-3	TO-247-3
LSIC1MO120E0080 SICFET N-CH 1200V 39A TO247-3 Littelfuse Inc.	369 In Stock	1 : $26.81000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	39A (Tc)	20V	100mOhm @ 20A, 20V	4V @ 10mA	95 nC @ 20 V	+22V, -6V	1825 pF @ 800 V	-	179W (Tc)	-55°C ~ 150°C	-	-	Through Hole	TO-247AD	TO-247-3

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Single FET, MOSFETs

Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

n-channel MOSFETs: where electrons are the primary carriers.
p-channel MOSFETs: where holes are the primary carriers.

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.