Single FETs, MOSFETs

Results: 3
Stocking Options
Environmental Options
Media
Marketplace Product
3Results

Showing
of 3
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
994
In Stock
1 : $37.10000
Cut Tape (CT)
1,000 : $22.13915
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
144A (Tc)
15V, 18V
12.2mOhm @ 56.7A, 18V
5.1V @ 17.8mA
124 nC @ 18 V
+23V, -10V
4050 pF @ 800 V
-
600W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-7-12
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
D2PAK-7
NTBG070N120M3S
SILICON CARBIDE (SIC) MOSFET - E
onsemi
1,148
In Stock
1 : $11.86000
Cut Tape (CT)
800 : $5.04299
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
36A (Tc)
18V
87mOhm @ 15A, 18V
4.4V @ 7mA
57 nC @ 18 V
+22V, -10V
1230 pF @ 800 V
-
172W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
D2PAK-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
0
In Stock
Check Lead Time
1 : $13.64000
Cut Tape (CT)
1,000 : $6.06289
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
41A (Tc)
15V, 18V
52.6mOhm @ 13.2A, 18V
5.1V @ 4.1mA
30 nC @ 18 V
+23V, -10V
1010 pF @ 800 V
-
205W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-7-12
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Showing
of 3

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.