Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
DMN10H170SK3-13 MOSFET N-CH 100V 12A TO252-3 Diodes Incorporated	112,865 In Stock 7,500 Factory	1 : $1.30000 Cut Tape (CT) 2,500 : $0.34999 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	12A (Tc)	4.5V, 10V	140mOhm @ 5A, 10V	3V @ 250µA	9.7 nC @ 10 V	±20V	1167 pF @ 25 V	-	42W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252-3	TO-252-3, DPAK (2 Leads + Tab), SC-63
MCU18P10Y-TP MOSFET P-CH 100V 18A DPAK MCC (Micro Commercial Components)	4,788 In Stock	1 : $1.90000 Cut Tape (CT) 2,500 : $0.49727 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	100 V	18A (Tc)	-	110mOhm @ 10A, 10V	2.5V @ 250µA	20 nC @ 10 V	±20V	1050 pF @ 80 V	-	70W	-55°C ~ 150°C (TJ)	-	-	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63
FDD1600N10ALZ MOSFET N-CH 100V 6.8A TO252 onsemi	6,323 In Stock	1 : $2.00000 Cut Tape (CT) 2,500 : $0.60592 Tape & Reel (TR)	PowerTrench®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	6.8A (Tc)	5V, 10V	160mOhm @ 3.4A, 10V	2.8V @ 250µA	3.61 nC @ 10 V	±20V	225 pF @ 50 V	-	14.9W (Tc)	-55°C ~ 155°C (TJ)	-	-	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63

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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.