Single FETs, MOSFETs

Results: 10
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
407
In Stock
1 : $34.30000
Cut Tape (CT)
750 : $23.90869
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
288A (Tc)
10V
7mOhm @ 100A, 10V
4.7V @ 3.24mA
370 nC @ 10 V
±20V
16385 pF @ 400 V
-
1.249kW (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-HDSOP-22
22-PowerBSOP Module
PG-TO263-7-12
IMBG65R007M2HXTMA1
SICFET N-CH 650V 238A TO263-7
Infineon Technologies
201
In Stock
1 : $38.85000
Cut Tape (CT)
1,000 : $27.76217
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
238A (Tc)
15V, 20V
8.5mOhm @ 146.3A, 18V
5.6V @ 2.97mA
179 nC @ 18 V
+23V, -7V
6359 pF @ 400 V
-
789W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-7-12
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
306
In Stock
1 : $44.06000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
171A (Tc)
15V, 20V
6.1mOhm @ 146.3A, 20V
5.6V @ 29.7mA
179 nC @ 18 V
+23V, -7V
6359 pF @ 400 V
-
625W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-3-U06
TO-247-3
932
In Stock
1 : $51.02000
Cut Tape (CT)
1,000 : $33.09276
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
189A (Tc)
15V, 18V
7.7mOhm @ 89.9A, 18V
5.1V @ 28.3mA
195 nC @ 18 V
+23V, -10V
6380 pF @ 800 V
-
800W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-7-12
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
2,987
In Stock
1 : $65.84000
Cut Tape (CT)
1,000 : $45.46772
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
187A
-
-
-
-
-
-
-
-
-55°C ~ 175°C
Automotive
AEC-Q101
Surface Mount
PG-TO263-7-12
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
PG-HDSOP-22
AIMDQ75R016M1HXUMA1
SICFET N-CH 750V PG-HDSOP-22
Infineon Technologies
327
In Stock
1 : $28.90000
Cut Tape (CT)
750 : $16.77321
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
750 V
98A (Tc)
0V, 18V
22mOhm @ 41.5A, 18V
5.6V @ 14.9mA
80 nC @ 18 V
+23V, -5V
2869 pF @ 500 V
-
384W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
PG-HDSOP-22
22-PowerBSOP Module
628
In Stock
1 : $24.08000
Cut Tape (CT)
750 : $15.20116
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiC (Silicon Carbide Junction Transistor)
650 V
94A (Tc)
15V, 20V
13.2mOhm @ 64.2A, 20V
5.6V @ 13mA
79 nC @ 18 V
+23V, -7V
2792 pF @ 400 V
-
499W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-HDSOP-22-1
22-PowerBSOP Module
482
In Stock
1 : $33.47000
Cut Tape (CT)
1,000 : $21.46985
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiC (Silicon Carbide Junction Transistor)
650 V
158A (Tc)
15V, 20V
9.1mOhm @ 92.1A, 20V
5.6V @ 18.7mA
112 nC @ 18 V
+23V, -7V
4001 pF @ 400 V
-
535W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-7-12
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
0
In Stock
Check Lead Time
1 : $30.88000
Cut Tape (CT)
750 : $19.85571
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiC (Silicon Carbide Junction Transistor)
650 V
154A (Tc)
15V, 20V
9.1mOhm @ 92.1A, 20V
5.6V @ 18.7mA
113 nC @ 18 V
+23V, -10V
4002 pF @ 400 V
-
651W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-HDSOP-22-1
22-PowerBSOP Module
UJ4N075004L8S
UJ4N075004L8S
750V/4MO, G4, N-ON JFET IN TOLL
onsemi
0
In Stock
Check Lead Time
1 : $76.14000
Cut Tape (CT)
2,000 : $53.59853
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
750 V
120A (Tc)
0V, 2V
4.3mOhm @ 80A, 2V
3.7V @ 180mA
400 nC @ 18 V
+3V, -30V
3028 pF @ 400 V
-
1153W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TOLL
8-PowerSFN
Showing
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.