Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
IRF510PBF MOSFET N-CH 100V 5.6A TO220AB Vishay Siliconix	30,752 In Stock	1 : $1.41000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	5.6A (Tc)	10V	540mOhm @ 3.4A, 10V	4V @ 250µA	8.3 nC @ 10 V	±20V	180 pF @ 25 V	-	43W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB	TO-220-3
FDC606P MOSFET P-CH 12V 6A SUPERSOT6 onsemi	7,637 In Stock	1 : $1.45000 Cut Tape (CT) 3,000 : $0.49741 Tape & Reel (TR)	PowerTrench®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	12 V	6A (Ta)	1.8V, 4.5V	26mOhm @ 6A, 4.5V	1.5V @ 250µA	25 nC @ 4.5 V	±8V	1699 pF @ 6 V	-	1.6W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SuperSOT™-6	SOT-23-6 Thin, TSOT-23-6
BS170 MOSFET N-CH 60V 500MA TO92-3 onsemi	34,126 In Stock	1 : $0.44000 Bulk	-	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	60 V	500mA (Ta)	10V	5Ohm @ 200mA, 10V	3V @ 1mA	-	±20V	40 pF @ 10 V	-	830mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
IRF710PBF MOSFET N-CH 400V 2A TO220AB Vishay Siliconix	4,886 In Stock	1 : $1.05000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	400 V	2A (Tc)	10V	3.6Ohm @ 1.2A, 10V	4V @ 250µA	17 nC @ 10 V	±20V	170 pF @ 25 V	-	36W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220AB	TO-220-3

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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.