Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
T2N7002AK,LM MOSFET N-CH 60V 200MA SOT23 Toshiba Semiconductor and Storage	234,848 In Stock	1 : $0.19000 Cut Tape (CT) 3,000 : $0.03150 Tape & Reel (TR)	U-MOSVII-H	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	200mA (Ta)	4.5V, 10V	3.9Ohm @ 100mA, 10V	2.1V @ 250µA	0.35 nC @ 4.5 V	±20V	17 pF @ 10 V	-	320mW (Ta)	150°C (TJ)	-	-	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
BSS138-7-F MOSFET N-CH 50V 200MA SOT23-3 Diodes Incorporated	211,117 In Stock	1 : $0.24000 Cut Tape (CT) 3,000 : $0.04350 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	50 V	200mA (Ta)	10V	3.5Ohm @ 220mA, 10V	1.5V @ 250µA	-	±20V	50 pF @ 10 V	-	300mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
DMP3130LQ-7 MOSFET P-CH 30V 3.5A SOT23 Diodes Incorporated	27,981 In Stock	1 : $0.78000 Cut Tape (CT) 3,000 : $0.18993 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	30 V	3.5A (Ta)	2.5V, 10V	77mOhm @ 4.2A, 10V	1.3V @ 250µA	24 nC @ 10 V	±12V	864 pF @ 15 V	-	700mW (Ta)	-55°C ~ 150°C (TJ)	Automotive	AEC-Q101	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3

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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.