13A (Ta), 50A (Tc) Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
AOD4184A MOSFET N-CH 40V 13A/50A TO252 Alpha & Omega Semiconductor Inc.	70,308 In Stock	1 : $1.56000 Cut Tape (CT) 2,500 : $0.39659 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	40 V	13A (Ta), 50A (Tc)	4.5V, 10V	7mOhm @ 20A, 10V	2.6V @ 250µA	33 nC @ 10 V	±20V	1800 pF @ 20 V	-	2.3W (Ta), 50W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-252 (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
CSD18534Q5A MOSFET N-CH 60V 13A/50A 8VSON Texas Instruments	32,752 In Stock	1 : $2.43000 Cut Tape (CT) 2,500 : $0.66244 Tape & Reel (TR)	NexFET™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	13A (Ta), 50A (Tc)	4.5V, 10V	9.8mOhm @ 14A, 10V	2.3V @ 250µA	22 nC @ 10 V	±20V	1770 pF @ 30 V	-	3.1W (Ta), 77W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-VSONP (5x6)	8-PowerTDFN
NVTFS5C673NLTAG MOSFET N-CH 60V 13A/50A 8WDFN onsemi	5,671 In Stock	1 : $2.80000 Cut Tape (CT) 1,500 : $0.83079 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	13A (Ta), 50A (Tc)	4.5V, 10V	9.8mOhm @ 25A, 10V	2V @ 250µA	9.5 nC @ 10 V	±20V	880 pF @ 25 V	-	3.1W (Ta), 46W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN
BSB104N08NP3GXUMA2 TRENCH 40<-<100V Infineon Technologies	4,800 In Stock	4,800 : $0.87397 Tape & Reel (TR)	-	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	80 V	13A (Ta), 50A (Tc)	10V	10.4mOhm @ 10A, 10V	3.5V @ 40µA	31 nC @ 10 V	±20V	2100 pF @ 40 V	-	2.8W (Ta), 42W (Tc)	-40°C ~ 150°C (TJ)	-	-	Surface Mount	MG-WDSON-2-6	DirectFET™ Isometric MP
FDD6696 MOSFET N-CH 30V 13A/50A DPAK Fairchild Semiconductor	217,895 Marketplace	Unavailable Unavailable in your selected currency	PowerTrench®	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	13A (Ta), 50A (Tc)	4.5V, 10V	8mOhm @ 13A, 10V	3V @ 250µA	24 nC @ 5 V	±16V	1715 pF @ 15 V	-	3.8W (Ta), 52W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-252 (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
FDU6696 N-CHANNEL POWER MOSFET Fairchild Semiconductor	3,600 Marketplace	Unavailable Unavailable in your selected currency	PowerTrench®	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	13A (Ta), 50A (Tc)	4.5V, 10V	8mOhm @ 13A, 10V	3V @ 250µA	24 nC @ 5 V	±16V	1715 pF @ 15 V	-	1.6W (Ta), 52W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	IPAK	TO-251-3 Short Leads, IPAK, TO-251AA
NTTFS5C673NLTWG MOSFET N-CH 60V 13A/50A 8WDFN onsemi	4,748 In Stock	1 : $2.33000 Cut Tape (CT) 5,000 : $1.03587 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Obsolete	N-Channel	MOSFET (Metal Oxide)	60 V	13A (Ta), 50A (Tc)	4.5V, 10V	9.3mOhm @ 25A, 10V	2V @ 250µA	9.5 nC @ 10 V	±20V	880 pF @ 25 V	-	3.1W (Ta), 46W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN
NVTFS5C673NLWFTAG MOSFET N-CH 60V 13A/50A 8WDFN onsemi	62 In Stock	1 : $3.25000 Cut Tape (CT) 1,500 : $0.98437 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	13A (Ta), 50A (Tc)	4.5V, 10V	9.8mOhm @ 25A, 10V	2V @ 250µA	9.5 nC @ 10 V	±20V	880 pF @ 25 V	-	3.1W (Ta), 46W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN
NTTFS5C673NLTAG MOSFET N-CH 60V 13A/50A 8WDFN onsemi	0 In Stock Check Lead Time	1 : $0.66000 Cut Tape (CT) 1,500 : $0.29645 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	13A (Ta), 50A (Tc)	4.5V, 10V	9.3mOhm @ 25A, 10V	2V @ 250µA	9.5 nC @ 10 V	±20V	880 pF @ 25 V	-	3.1W (Ta), 46W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN
DMT10H009LFG-13 MOSFET N-CH 100V 13A/50A PWRDI Diodes Incorporated	0 In Stock 3,000 Factory Check Lead Time	3,000 : $0.69571 Tape & Reel (TR)	-	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	100 V	13A (Ta), 50A (Tc)	4.5V, 10V	8.5mOhm @ 20A, 10V	2.5V @ 250µA	41 nC @ 10 V	±20V	2361 pF @ 50 V	-	2W (Ta), 30W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	POWERDI3333-8	8-PowerVDFN
DMT10H009LFG-7 MOSFET N-CH 100V 13A/50A PWRDI Diodes Incorporated	0 In Stock 2,000 Factory Check Lead Time	2,000 : $0.72737 Tape & Reel (TR)	-	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	100 V	13A (Ta), 50A (Tc)	4.5V, 10V	8.5mOhm @ 20A, 10V	2.5V @ 250µA	41 nC @ 10 V	±20V	2361 pF @ 50 V	-	2W (Ta), 30W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	POWERDI3333-8	8-PowerVDFN
BSB104N08NP3GXUMA1 TRENCH 40<-<100V Infineon Technologies	0 In Stock Check Lead Time	5,000 : $0.87397 Tape & Reel (TR)	-	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	80 V	13A (Ta), 50A (Tc)	10V	10.4mOhm @ 10A, 10V	3.5V @ 40µA	31 nC @ 10 V	±20V	2100 pF @ 40 V	-	2.8W (Ta), 42W (Tc)	-40°C ~ 150°C (TJ)	-	-	Surface Mount	MG-WDSON-2-6	DirectFET™ Isometric MP
BSB104N08NP3GXUSA1 MOSFET N-CH 80V 13A/50A 2WDSON Infineon Technologies	0 In Stock	5,000 : $0.92241 Tape & Reel (TR)	OptiMOS™	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	80 V	13A (Ta), 50A (Tc)	10V	10.4mOhm @ 10A, 10V	3.5V @ 40µA	31 nC @ 10 V	±20V	2100 pF @ 40 V	-	2.8W (Ta), 42W (Tc)	-40°C ~ 150°C (TJ)	-	-	Surface Mount	MG-WDSON-2, CanPAK M™	3-WDSON
BSB104N08NP3GXUMA3 TRENCH 40<-<100V Infineon Technologies	0 In Stock	5,000 : $0.99126 Tape & Reel (TR)	-	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	80 V	13A (Ta), 50A (Tc)	10V	10.4mOhm @ 10A, 10V	3.5V @ 40µA	31 nC @ 10 V	±20V	2100 pF @ 40 V	-	2.8W (Ta), 42W (Tc)	-40°C ~ 150°C (TJ)	-	-	Surface Mount	MG-WDSON-2-6	DirectFET™ Isometric MP
FDD6696 MOSFET N-CH 30V 13A/50A DPAK onsemi	0 In Stock	Obsolete	PowerTrench®	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	13A (Ta), 50A (Tc)	4.5V, 10V	8mOhm @ 13A, 10V	3V @ 250µA	24 nC @ 5 V	±16V	1715 pF @ 15 V	-	3.8W (Ta), 52W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
NTTFS5CS73NLTAG T6 60V NCH LL IN U8FL onsemi	0 In Stock Check Lead Time	1 : $2.00000 Cut Tape (CT) 1,500 : $0.31422 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	13A (Ta), 50A (Tc)	-	-	-	-	-	-	-	-	-55°C ~ 175°C (TJ)	-	-	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN

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Single FET, MOSFETs

Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

n-channel MOSFETs: where electrons are the primary carriers.
p-channel MOSFETs: where holes are the primary carriers.

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.

Single FET, MOSFETs

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