1.7A (Tc) Single FETs, MOSFETs

Showing

of 60

Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
SQ2309CES-T1_GE3 AUTOMOTIVE P-CHANNEL 60 V (D-S) Vishay Siliconix	14,019 In Stock	1 : $0.93000 Cut Tape (CT) 3,000 : $0.21178 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	60 V	1.7A (Tc)	4.5V, 10V	370mOhm @ 1.25A, 10V	2.5V @ 250µA	8.5 nC @ 10 V	±20V	265 pF @ 25 V	-	2W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
IPD50R3K0CEAUMA1 MOSFET N-CH 500V 1.7A TO252-3 Infineon Technologies	14,721 In Stock	1 : $1.03000 Cut Tape (CT) 2,500 : $0.23933 Tape & Reel (TR)	CoolMOS™ CE	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	500 V	1.7A (Tc)	13V	3Ohm @ 400mA, 13V	3.5V @ 30µA	4.3 nC @ 10 V	±20V	84 pF @ 100 V	-	26W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-TO252-3	TO-252-3, DPAK (2 Leads + Tab), SC-63
SQ1470AEH-T1_GE3 MOSFET N-CH 30V 1.7A SOT363 SC70 Vishay Siliconix	264,865 In Stock	1 : $1.24000 Cut Tape (CT) 3,000 : $0.25448 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	1.7A (Tc)	2.5V, 4.5V	65mOhm @ 4.2A, 4.5V	1.6V @ 250µA	5.2 nC @ 4.5 V	±12V	450 pF @ 15 V	-	3.3W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	SC-70-6	6-TSSOP, SC-88, SOT-363
SQ1440EH-T1_GE3 MOSFET N-CH 60V 1.7A SC70-6 Vishay Siliconix	66,668 In Stock	1 : $1.24000 Cut Tape (CT) 3,000 : $0.29938 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	1.7A (Tc)	4.5V, 10V	120mOhm @ 3.8A, 10V	2.5V @ 250µA	5.5 nC @ 10 V	±20V	344 pF @ 15 V	-	3.3W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	SC-70-6	6-TSSOP, SC-88, SOT-363
SIHFU310-GE3 MOSFET N-CHANNEL 400V Vishay Siliconix	2,415 In Stock	1 : $1.63000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	400 V	1.7A (Tc)	10V	3.6Ohm @ 1A, 10V	4V @ 250µA	12 nC @ 10 V	±20V	170 pF @ 25 V	-	2.5W (Ta), 25W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-251AA	TO-251-3 Short Leads, IPAK, TO-251AA
FQD2N90TM MOSFET N-CH 900V 1.7A DPAK onsemi	7,754 In Stock	1 : $2.88000 Cut Tape (CT) 2,500 : $0.86367 Tape & Reel (TR)	QFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	900 V	1.7A (Tc)	10V	7.2Ohm @ 850mA, 10V	5V @ 250µA	15 nC @ 10 V	±30V	500 pF @ 25 V	-	2.5W (Ta), 50W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
IPD60R3K3C6ATMA1 MOSFET N-CH 600V 1.7A TO252-3 Infineon Technologies	1,696 In Stock	1 : $1.53000 Cut Tape (CT) 2,500 : $0.36837 Tape & Reel (TR)	CoolMOS™ C6	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	600 V	1.7A (Tc)	10V	3.3Ohm @ 500mA, 10V	3.5V @ 40µA	4.6 nC @ 10 V	±20V	93 pF @ 100 V	-	18.1W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-TO252-3	TO-252-3, DPAK (2 Leads + Tab), SC-63
R6002END3TL1 MOSFET N-CH 600V 1.7A TO252 Rohm Semiconductor	1,867 In Stock	1 : $2.37000 Cut Tape (CT) 2,500 : $0.64519 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	600 V	1.7A (Tc)	10V	3.4Ohm @ 500mA, 10V	4V @ 1mA	6.5 nC @ 10 V	±20V	65 pF @ 25 V	-	26W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252	TO-252-3, DPAK (2 Leads + Tab), SC-63
IRFR310TRPBF MOSFET N-CH 400V 1.7A DPAK Vishay Siliconix	10,167 In Stock	1 : $3.20000 Cut Tape (CT) 2,000 : $0.93150 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	400 V	1.7A (Tc)	10V	3.6Ohm @ 1A, 10V	4V @ 250µA	12 nC @ 10 V	±20V	170 pF @ 25 V	-	2.5W (Ta), 25W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63
IRFR310PBF MOSFET N-CH 400V 1.7A DPAK Vishay Siliconix	499 In Stock	1 : $3.20000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	400 V	1.7A (Tc)	10V	3.6Ohm @ 1A, 10V	4V @ 250µA	12 nC @ 10 V	±20V	170 pF @ 25 V	-	2.5W (Ta), 25W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63
IRFBF20PBF MOSFET N-CH 900V 1.7A TO220AB Vishay Siliconix	127 In Stock	1 : $4.88000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	900 V	1.7A (Tc)	10V	8Ohm @ 1A, 10V	4V @ 250µA	38 nC @ 10 V	±20V	490 pF @ 25 V	-	54W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220AB	TO-220-3
IRFBF20SPBF MOSFET N-CH 900V 1.7A D2PAK Vishay Siliconix	165 In Stock	1 : $4.92000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	900 V	1.7A (Tc)	10V	8Ohm @ 1A, 10V	4V @ 250µA	38 nC @ 10 V	±20V	490 pF @ 25 V	-	3.1W (Ta), 54W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IRFR310TRPBF-BE3 MOSFET N-CH 400V 1.7A DPAK Vishay Siliconix	3,797 In Stock	1 : $3.20000 Cut Tape (CT) 2,000 : $0.93150 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	400 V	1.7A (Tc)	10V	3.6Ohm @ 1A, 10V	4V @ 250µA	12 nC @ 10 V	±20V	170 pF @ 25 V	-	2.5W (Ta), 25W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
IRFBF20STRLPBF MOSFET N-CH 900V 1.7A D2PAK Vishay Siliconix	662 In Stock	1 : $4.92000 Cut Tape (CT) 800 : $1.60316 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	900 V	1.7A (Tc)	10V	8Ohm @ 1A, 10V	4V @ 250µA	38 nC @ 10 V	±20V	490 pF @ 25 V	-	3.1W (Ta), 54W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IRFIBC20GPBF MOSFET N-CH 600V 1.7A TO220-3 Vishay Siliconix	1,041 In Stock	1 : $5.28000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	1.7A (Tc)	10V	4.4Ohm @ 1A, 10V	4V @ 250µA	18 nC @ 10 V	±20V	350 pF @ 25 V	-	30W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220-3	TO-220-3 Full Pack, Isolated Tab
SQ2309CES-T1_BE3 P-CHANNEL 60-V (D-S) 175C MOSF Vishay Siliconix	2,275 In Stock	1 : $0.93000 Cut Tape (CT) 3,000 : $0.21178 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	60 V	1.7A (Tc)	4.5V, 10V	370mOhm @ 1.25A, 10V	2.5V @ 250µA	8.5 nC @ 10 V	±20V	265 pF @ 25 V	-	2W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
R6502END3TL1 650V 1.7A TO-252, LOW-NOISE POWE Rohm Semiconductor	2,486 In Stock	1 : $2.42000 Cut Tape (CT) 2,500 : $0.66068 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	650 V	1.7A (Tc)	10V	4Ohm @ 600mA, 10V	4V @ 40µA	6.5 nC @ 10 V	±20V	65 pF @ 25 V	-	26W (Tc)	150°C (TJ)	-	-	Surface Mount	TO-252	TO-252-3, DPAK (2 Leads + Tab), SC-63
IRFBF20LPBF MOSFET N-CH 900V 1.7A I2PAK Vishay Siliconix	499 In Stock	1 : $4.92000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	900 V	1.7A (Tc)	10V	8Ohm @ 1A, 10V	4V @ 250µA	38 nC @ 10 V	±20V	490 pF @ 25 V	-	3.1W (Ta), 54W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	I2PAK	TO-262-3 Long Leads, I2PAK, TO-262AA
G01N20LE MOSFET N-CH ESD 200V 1.7A SOT-23 Goford Semiconductor	42,000 Marketplace	Unavailable Unavailable in your selected currency	TrenchFET®	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	-	1.7A (Tc)	4.5V, 10V	700mOhm @ 1A, 10V	2.5V @ 250µA	-	±20V	-	-	1.5W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
IPU50R3K0CEBKMA1 MOSFET N-CH 500V 1.7A TO251-3 Infineon Technologies	0 In Stock 24,289 Marketplace	Obsolete	CoolMOS™ CE	Tube Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	500 V	1.7A (Tc)	13V	3Ohm @ 400mA, 13V	3.5V @ 30µA	4.3 nC @ 10 V	±20V	84 pF @ 100 V	-	18W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO251-3	TO-251-3 Short Leads, IPAK, TO-251AA
IRFU310BTU N-CHANNEL POWER MOSFET Fairchild Semiconductor	102,695 Marketplace	Unavailable Unavailable in your selected currency	-	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	400 V	1.7A (Tc)	10V	3.4Ohm @ 850mA,10V	4V @ 250µA	10 nC @ 10 V	±30V	330 pF @ 25 V	-	2.5W (Ta), 26W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-251 (IPAK)	TO-251-3 Stub Leads, IPAK
IRFR310BTF N-CHANNEL POWER MOSFET Fairchild Semiconductor	2,215 Marketplace	Unavailable Unavailable in your selected currency	-	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	400 V	1.7A (Tc)	10V	3.4Ohm @ 850mA,10V	4V @ 250µA	10 nC @ 10 V	±30V	330 pF @ 25 V	-	2.5W (Ta), 26W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63
SSFL0954 MOSFET, N-CH, SINGLE, 1.7A, 100V Good-Ark Semiconductor	5,999 In Stock	1 : $0.32000 Cut Tape (CT) 3,000 : $0.12639 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	100 V	1.7A (Tc)	4.5V, 10V	310mOhm @ 1A, 10V	2.5V @ 250µA	18 nC @ 10 V	±20V	800 pF @ 25 V	-	1.76W (Tc)	-50°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-223	TO-261-4, TO-261AA
MMFT3055ET1 SMALL SIGNAL N-CHANNEL MOSFET onsemi	64,066 Marketplace	Unavailable Unavailable in your selected currency	*	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	60 V	1.7A (Tc)	-	-	-	1 nC @ 10 V	-	-	-	800mW (Ta)	-65°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-223	TO-261-4, TO-261AA
FQU2N90TU MOSFET N-CH 900V 1.7A IPAK Fairchild Semiconductor	320,404 Marketplace	Unavailable Unavailable in your selected currency	QFET®	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	900 V	1.7A (Tc)	10V	7.2Ohm @ 850mA, 10V	5V @ 250µA	15 nC @ 10 V	±30V	500 pF @ 25 V	-	2.5W (Ta), 50W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	IPAK	TO-251-3 Short Leads, IPAK, TO-251AA

Showing

of 60

Single FET, MOSFETs

Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

n-channel MOSFETs: where electrons are the primary carriers.
p-channel MOSFETs: where holes are the primary carriers.

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.

Single FET, MOSFETs

INFORMATION

HELP

CONTACT US

FOLLOW US