FET, MOSFET Arrays

Results: 11

Filters

Stacked

Scrolling

Applied FiltersRemove All

Showing

of 11

Mfr Part #	Quantity Available	Price	Series	Package	Product Status	Technology	Configuration	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package

FMM75-01F MOSFET 2N-CH 100V 75A I4-PAC IXYS	20 In Stock 175 Factory	1 : $31.15000 Tube	HiPerFET™	Tube	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual)	-	100V	75A	25mOhm @ 50A, 10V	4V @ 4mA	180nC @ 10V	-	-	-55°C ~ 150°C (TJ)	Through Hole	i4-Pac™-5	ISOPLUS i4-PAC™
FMM50-025TF MOSFET 2N-CH 250V 30A I4-PAC IXYS	0 In Stock Check Lead Time	25 : $24.57840 Tube	HiPerFET™	Tube	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual)	-	250V	30A	50mOhm @ 25A, 10V	4.5V @ 250µA	78nC @ 10V	4000pF @ 25V	125W	-55°C ~ 150°C (TJ)	Through Hole	i4-Pac™-5	ISOPLUS i4-PAC™
FMM60-02TF MOSFET 2N-CH 200V 33A I4-PAC IXYS	0 In Stock Check Lead Time	25 : $24.57840 Tube	HiPerFET™	Tube	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual)	-	200V	33A	40mOhm @ 30A, 10V	4.5V @ 250µA	90nC @ 10V	3700pF @ 25V	125W	-55°C ~ 150°C (TJ)	Through Hole	i4-Pac™-5	ISOPLUS i4-PAC™
VMM45-02F MOSFET 2N-CH 200V 45A TO240AA IXYS	0 In Stock Check Lead Time	36 : $43.58611 Box	HiPerFET™	Box	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual)	-	200V	45A	45mOhm @ 22.5A, 10V	4V @ 4mA	225nC @ 10V	7500pF @ 25V	190W	-40°C ~ 150°C (TJ)	Chassis Mount	TO-240AA	TO-240AA
VKM60-01P1 MOSFET 4N-CH 100V 75A ECO-PAC2 IXYS	0 In Stock	25 : $86.73160 Box	HiPerFET™	Box	Obsolete	MOSFET (Metal Oxide)	4 N-Channel (Half Bridge)	-	100V	75A	25mOhm @ 500mA, 10V	4V @ 4mA	260nC @ 10V	4500pF @ 25V	300W	-40°C ~ 150°C (TJ)	Through Hole	ECO-PAC2	ECO-PAC2
FMK75-01F MOSFET 2N-CH 100V 75A I4-PAC IXYS	0 In Stock	Active	HiPerFET™	Tube	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual)	-	100V	75A	25mOhm @ 50A, 10V	4V @ 4mA	180nC @ 10V	-	-	-55°C ~ 150°C (TJ)	Through Hole	i4-Pac™-5	ISOPLUS i4-PAC™
VBH40-05B MOSFET 4N-CH 500V 40A V2-PAK IXYS	0 In Stock	Obsolete	HiPerFET™	Box	Obsolete	MOSFET (Metal Oxide)	4 N-Channel (Half Bridge)	-	500V	40A	116mOhm @ 30A, 10V	4V @ 8mA	270nC @ 10V	-	-	-40°C ~ 150°C (TJ)	Chassis Mount	V2-PAK	V2-PAK
VMM300-03F MOSFET 2N-CH 300V 290A Y3-DCB IXYS	0 In Stock	Obsolete	HiPerFET™	Box	Obsolete	MOSFET (Metal Oxide)	2 N-Channel (Dual)	-	300V	290A	8.6mOhm @ 145A, 10V	4V @ 30mA	1440nC @ 10V	40000pF @ 25V	1500W	-40°C ~ 150°C (TJ)	Chassis Mount	Y3-DCB	Y3-DCB
VMM650-01F MOSFET 2N-CH 100V 680A Y3-LI IXYS	0 In Stock	Obsolete	HiPerFET™	Box	Obsolete	MOSFET (Metal Oxide)	2 N-Channel (Dual)	-	100V	680A	2.2mOhm @ 500A, 10V	4V @ 30mA	1440nC @ 10V	-	-	-40°C ~ 150°C (TJ)	Chassis Mount	Y3-Li	Y3-Li
VMM85-02F MOSFET 2N-CH 200V 84A Y4-M6 IXYS	0 In Stock	Active	HiPerFET™	Box	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual)	-	200V	84A	25mOhm @ 500mA, 10V	4V @ 8mA	450nC @ 10V	15000pF @ 25V	370W	-40°C ~ 150°C (TJ)	Chassis Mount	Y4-M6	Y4-M6
VMM90-09F MOSFET 2N-CH 900V 85A Y3-LI IXYS	0 In Stock	Obsolete	HiPerFET™	Box	Obsolete	MOSFET (Metal Oxide)	2 N-Channel (Dual)	-	900V	85A	76mOhm @ 65A, 10V	5V @ 30mA	960nC @ 10V	-	-	-40°C ~ 150°C (TJ)	Chassis Mount	Y3-Li	Y3-Li

Showing

of 11

FET, MOSFET Arrays

Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.