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Mfr Part #
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Series
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Product Status
FET Type
Voltage - Breakdown (V(BR)GSS)
Drain to Source Voltage (Vdss)
Current - Drain (Idss) @ Vds (Vgs=0)
Current Drain (Id) - Max
Input Capacitance (Ciss) (Max) @ Vds
Resistance - RDS(On)
Power - Max
Operating Temperature
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Package / Case
Supplier Device Package
0
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Obsolete
Tube
ObsoleteN-Channel1.2 V1.2 V3.3 µA @ 1.2 V35 A2000pF @ 19.5V (VGS)70 mOhms238 W-55°C ~ 175°C (TJ)Through HoleTO-247-3PG-TO247-3
6,877
In Stock
Obsolete
Tube
ObsoleteN-Channel1.2 V1.2 V1.5 µA @ 1.2 V26 A1550pF @ 19.5V (VGS)100 mOhms190 W-55°C ~ 175°C (TJ)Through HoleTO-247-3PG-TO247-3
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Transistors - JFETs


Junction gate field-effect transistors (JFET) are devices used as electronically-controlled switches, amplifiers, or voltage-controlled resistors. A potential difference of the proper polarity applied between the gate and source terminals increases resistance to current flow, which means less current would flow in the channel between the source and drain terminals. JFETs do not need a biasing current due to a charge flowing through a semiconducting channel between source and drain terminals.