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Mfr Part #
Price
Stock
Supplier
Mfr
Min Qty
DK Part #
Series
Package
Part Status
FET Type
Voltage - Breakdown (V(BR)GSS)
Drain to Source Voltage (Vdss)
Current - Drain (Idss) @ Vds (Vgs=0)
Current Drain (Id) - Max
Voltage - Cutoff (VGS off) @ Id
Input Capacitance (Ciss) (Max) @ Vds
Resistance - RDS(On)
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
SOT-883
JFET N-CH 30V 10MA SOT883
MARKETPLACE PRODUCT
$0.72000
0 - Immediate
onsemionsemi
1
TF412ST5GOSTR-ND
TF412ST5GOSCT-ND
TF412ST5GOSDKR-ND
2156-TF412ST5G-OS-ND
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Bulk
ActiveN-Channel30 V30 V1.2 mA @ 10 V10 mA180 mV @ 1 µA4pF @ 10V-100 mW150°C (TJ)Surface Mount3-XFDFNSOT-883 (XDFN3) (1x0.6)
SOT-23-3
JFET N-CH 40V 350MW SOT23
$0.70000
5,984 - Immediate
onsemionsemi
1
MMBFJ201TR-ND
MMBFJ201CT-ND
MMBFJ201DKR-ND
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-Channel40 V-200 µA @ 20 V-300 mV @ 10 nA--350 mW-55°C ~ 150°C (TJ)Surface MountTO-236-3, SC-59, SOT-23-3SOT-23-3
TO-206AA TO-18-3
JFET N-CH 40V 1.8W TO-18
$4.32000
15,647 - Immediate
Central Semiconductor CorpCentral Semiconductor Corp
1
1514-2N4392PBFREE-ND
-
Bulk
ActiveN-Channel40 V-25 mA @ 20 V-2 V @ 1 nA14pF @ 20V60 Ohms1.8 W-65°C ~ 175°C (TJ)Through HoleTO-206AA, TO-18-3 Metal CanTO-18
TO-206AA TO-18-3
JFET N-CH 40V 1.8W TO-18
$4.40000
3,313 - Immediate
Central Semiconductor CorpCentral Semiconductor Corp
1
1514-2N4393PBFREE-ND
-
Bulk
ActiveN-Channel40 V-5 mA @ 20 V-500 mV @ 1 nA14pF @ 20V100 Ohms1.8 W-65°C ~ 175°C (TJ)Through HoleTO-206AA, TO-18-3 Metal CanTO-18
TO-92-3 Formed Leads
JFET N-CH 35V 625MW TO92
$0.59000
16,143 - Immediate
onsemionsemi
1
J113-D74ZCT-ND
J113-D74ZTB-ND
-
Cut Tape (CT)
Tape & Box (TB)
ActiveN-Channel35 V-2 mA @ 15 V-500 mV @ 1 µA-100 Ohms625 mW-55°C ~ 150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA) Formed LeadsTO-92-3
TO-92-3 Formed Leads
JFET N-CH 35V 625MW TO92
$0.65000
7,718 - Immediate
onsemionsemi
1
J112-D74ZCT-ND
J112-D74ZTB-ND
-
Cut Tape (CT)
Tape & Box (TB)
ActiveN-Channel35 V-5 mA @ 15 V-1 V @ 1 µA-50 Ohms625 mW-55°C ~ 150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA) Formed LeadsTO-92-3
TO-92-3 Formed Leads
JFET N-CH 35V 625MW TO92-3
$0.65000
3,693 - Immediate
onsemionsemi
1
J112-D26ZTR-ND
J112-D26ZCT-ND
-
Tape & Reel (TR)
Cut Tape (CT)
ActiveN-Channel35 V-5 mA @ 15 V-1 V @ 1 µA-50 Ohms625 mW-55°C ~ 150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA) Formed LeadsTO-92-3
TO-92-3 Formed Leads
JFET N-CH 35V 625MW TO92
$0.70000
21,412 - Immediate
66,000 - Factory
onsemionsemi
1
J111-D26ZTR-ND
J111-D26ZCT-ND
-
Tape & Reel (TR)
Cut Tape (CT)
ActiveN-Channel35 V-20 mA @ 15 V-3 V @ 1 µA-30 Ohms625 mW-55°C ~ 150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA) Formed LeadsTO-92-3
SOT-23-3
JFET N-CH 50V S-MINI
$0.72000
5,980 - Immediate
Toshiba Semiconductor and StorageToshiba Semiconductor and Storage
1
2SK208-R(TE85LF)TR-ND
2SK208-R(TE85LF)CT-ND
2SK208-R(TE85LF)DKR-ND
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-Channel50 V-300 µA @ 10 V6.5 mA400 mV @ 100 nA8.2pF @ 10V-100 mW125°C (TJ)Surface MountTO-236-3, SC-59, SOT-23-3S-Mini
TO-92-3 Formed Leads
JFET P-CH 30V 0.35W TO92-3
$0.70000
6,986 - Immediate
onsemionsemi
1
J175-D26ZTR-ND
J175-D26ZCT-ND
-
Tape & Reel (TR)
Cut Tape (CT)
ActiveP-Channel30 V-7 mA @ 15 V-3 V @ 10 nA-125 Ohms350 mW-55°C ~ 150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA) Formed LeadsTO-92-3
TO-92-3 Formed Leads
JFET N-CH 25V 625MW TO92
$0.78000
3,451 - Immediate
onsemionsemi
1
J109-D26ZTR-ND
J109-D26ZCT-ND
-
Tape & Reel (TR)
Cut Tape (CT)
ActiveN-Channel25 V-40 mA @ 15 V-2 V @ 10 nA-12 Ohms625 mW-55°C ~ 150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA) Formed LeadsTO-92-3
SC-70, SOT-323 PKG
JFET N-CH 50V 0.1W USM
$0.85000
4,192 - Immediate
Toshiba Semiconductor and StorageToshiba Semiconductor and Storage
1
2SK880-BL(TE85LF)TR-ND
2SK880-BL(TE85LF)CT-ND
2SK880-BL(TE85LF)DKR-ND
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-Channel50 V-6 mA @ 10 V-1.5 V @ 100 nA13pF @ 10V-100 mW125°C (TJ)Surface MountSC-70, SOT-323SC-70
SOT-23-3
IC JFET N-CH 25V 50MA 3CPH
$0.85000
5,826 - Immediate
onsemionsemi
1
NSVJ3910SB3T1GOSTR-ND
NSVJ3910SB3T1GOSCT-ND
NSVJ3910SB3T1GOSDKR-ND
Automotive, AEC-Q101
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-Channel25 V25 V20 mA @ 5 V50 mA600 mV @ 100 µA6pF @ 5V-400 mW-55°C ~ 150°C (TJ)Surface MountTO-236-3, SC-59, SOT-23-33-CPH
SC-74A, SOT-753
MOSFET 2N-CH JFET 50V SMV
$0.98000
4,884 - Immediate
Toshiba Semiconductor and StorageToshiba Semiconductor and Storage
1
2SK2145-Y(TE85LF)TR-ND
2SK2145-Y(TE85LF)CT-ND
2SK2145-Y(TE85LF)DKR-ND
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active2 N-Channel (Dual)--1.2 mA @ 10 V-200 mV @ 100 nA13pF @ 10V-300 mW125°C (TJ)Surface MountSC-74A, SOT-753SMV
SC-70-5, SC-88A, SOT-323-5, SOT-353, 5-TSSOP
JFET DUAL N-CH USV
$1.09000
2,937 - Immediate
Toshiba Semiconductor and StorageToshiba Semiconductor and Storage
1
2SK3320-BL(TE85LFTR-ND
2SK3320-BL(TE85LFCT-ND
2SK3320-BL(TE85LFDKR-ND
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-Channel--6 mA @ 10 V-200 mV @ 100 nA13pF @ 10V-200 mW125°C (TJ)Surface Mount5-TSSOP, SC-70-5, SOT-353USV
6-CPH
JFET 2N-CH 0.7W CPH6
$0.99000
3,206 - Immediate
onsemionsemi
1
CPH6904-TL-EOSTR-ND
CPH6904-TL-EOSCT-ND
CPH6904-TL-EOSDKR-ND
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active2 N-Channel (Dual)--20 mA @ 5 V50 mA600 mV @ 100 µA6pF @ 5V-700 mW150°C (TJ)Surface MountSC-74, SOT-4576-CPH
TO-92-3(StandardBody),TO-226_straightlead
JFET N-CH 35V 625MW TO92-3
$0.56000
39,484 - Immediate
70,000 - Factory
onsemionsemi
1
J111FS-ND
-
Bulk
ActiveN-Channel35 V-20 mA @ 15 V-3 V @ 1 µA-30 Ohms625 mW-55°C ~ 150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA)TO-92-3
TO-92-3(StandardBody),TO-226_straightlead
JFET N-CH 35V 625MW TO92-3
$0.59000
7,636 - Immediate
onsemionsemi
1
J113FS-ND
-
Bulk
ActiveN-Channel35 V-2 mA @ 15 V-500 mV @ 1 µA-100 Ohms625 mW-55°C ~ 150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA)TO-92-3
SOT-23 SERIES
JFET N-CH 40V 50MA SOT23
$1.50000
10,654 - Immediate
Central Semiconductor CorpCentral Semiconductor Corp
1
1514-CMPF4393TRPBFREETR-ND
1514-CMPF4393TRPBFREECT-ND
1514-CMPF4393TRPBFREEDKR-ND
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-Channel40 V40 V5 mA @ 20 V-500 mV @ 1 nA14pF @ 20V100 Ohms350 mW-65°C ~ 150°C (TJ)Surface MountTO-236-3, SC-59, SOT-23-3SOT-23
TO-92-3(StandardBody),TO-226_straightlead
JFET N-CH 35V 625MW TO92
$0.65000
16,605 - Immediate
onsemionsemi
1
J112FS-ND
-
Bulk
ActiveN-Channel35 V-5 mA @ 15 V-1 V @ 1 µA-50 Ohms625 mW-55°C ~ 150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA)TO-92-3
TO-92-3(StandardBody),TO-226_straightlead
JFET N-CH 25V 625MW TO92
$0.78000
7,956 - Immediate
onsemionsemi
1
J109FS-ND
-
Bulk
ActiveN-Channel25 V-40 mA @ 15 V-2 V @ 10 nA-12 Ohms625 mW-55°C ~ 150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA)TO-92-3
TO-206AA TO-18-3
JFET N-CH 40V 0.36W TO-18
$6.06000
181 - Immediate
Central Semiconductor CorpCentral Semiconductor Corp
1
2N4858A-ND
-
Bulk
ActiveN-Channel40 V-8 mA @ 15 V-800 mV @ 0.5 nA10pF @ 10V (VGS)60 Ohms360 mW-65°C ~ 200°C (TJ)Through HoleTO-206AA, TO-18-3 Metal CanTO-18
UJ3N120035K3S
1200V 35 MOHM SIC JFET, G3, N-ON
$35.06000
197 - Immediate
UnitedSiCUnitedSiC
1
2312-UJ3N120035K3S-ND
-
Tube
ActiveN-Channel1200 V1200 V-63 A-2145pF @ 100V45 mOhms429 W-55°C ~ 175°C (TJ)Through HoleTO-247-3TO-247-3
SC-70, SOT-323 PKG
JFET N-CH 0.1W USM
$0.61000
5,593 - Immediate
Toshiba Semiconductor and StorageToshiba Semiconductor and Storage
1
2SK879-GR(TE85LF)TR-ND
2SK879-GR(TE85LF)CT-ND
2SK879-GR(TE85LF)DKR-ND
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-Channel--2.6 mA @ 10 V-400 mV @ 100 nA8.2pF @ 10V-100 mW125°C (TJ)Surface MountSC-70, SOT-323USM
1200V/65MOHM, SIC, N-ON JFET, G3
1200V/65MOHM, SIC, N-ON JFET, G3
$20.67000
577 - Immediate
UnitedSiCUnitedSiC
1
2312-UJ3N120065K3S-ND
-
Tube
ActiveN-Channel1200 V1200 V5 µA @ 1200 V34 A-1008pF @ 100V55 mOhms254 W-55°C ~ 175°C (TJ)Through HoleTO-247-3TO-247-3
Showing
1 - 25
of 706

Transistors - JFETs


Junction gate field-effect transistors (JFET) are devices used as electronically-controlled switches, amplifiers, or voltage-controlled resistors. A potential difference of the proper polarity applied between the gate and source terminals increases resistance to current flow, which means less current would flow in the channel between the source and drain terminals. JFETs do not need a biasing current due to a charge flowing through a semiconducting channel between source and drain terminals.