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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SC-101 SOT-883
NX7002BKMYL
MOSFET N-CH 60V 350MA DFN1006-3
Nexperia USA Inc.
124,773
In Stock
1 : $0.47000
Cut Tape (CT)
10,000 : $0.06141
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)60 V350mA (Ta)5V, 10V2.8Ohm @ 200mA, 10V2.1V @ 250µA1 nC @ 10 V±20V23.6 pF @ 10 V-350mW (Ta), 3.1W (Tc)-55°C ~ 150°C (TJ)Surface MountSOT-883SC-101, SOT-883
3-DFN1006
DMN62D1LFB-7B
MOSFET N-CH 60V 320MA 3DFN
Diodes Incorporated
120,975
In Stock
420,000
Factory
1 : $0.62000
Cut Tape (CT)
10,000 : $0.10012
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)60 V320mA (Ta)1.5V, 4V2Ohm @ 100mA, 4V1V @ 250µA0.9 nC @ 4.5 V±20V64 pF @ 25 V-500mW (Ta)-55°C ~ 150°C (TJ)Surface MountX1-DFN1006-33-UFDFN
3-DFN1006
DMN2400UFB-7
MOSFET N-CH 20V 750MA 3DFN
Diodes Incorporated
875,794
In Stock
1 : $0.50000
Cut Tape (CT)
3,000 : $0.10345
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)20 V750mA (Ta)1.8V, 4.5V550mOhm @ 600mA, 4.5V900mV @ 250µA0.5 nC @ 4.5 V±12V36 pF @ 16 V-470mW (Ta)-55°C ~ 150°C (TJ)Surface MountX1-DFN1006-33-UFDFN
SBR 3-DFN
DMP2104LP-7
MOSFET P-CH 20V 1.5A 3DFN1411
Diodes Incorporated
92,368
In Stock
1 : $0.68000
Cut Tape (CT)
3,000 : $0.20930
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveP-ChannelMOSFET (Metal Oxide)20 V1.5A (Ta)1.8V, 4.5V150mOhm @ 950mA, 4.5V1V @ 250µA-±12V320 pF @ 16 V-500mW (Ta)-55°C ~ 150°C (TJ)Surface MountDFN1411-33-UDFN
156,363
In Stock
1 : $0.37000
Cut Tape (CT)
10,000 : $0.05189
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)60 V400mA (Ta)4.5V, 10V1.5Ohm @ 100mA, 10V2.1V @ 250µA0.6 nC @ 4.5 V±20V40 pF @ 10 V-500mW (Ta)-55°C ~ 150°C (TJ)Surface MountCST3SC-101, SOT-883
SC-101 SOT-883
NX138BKMYL
MOSFET N-CH 60V 380MA DFN1006-3
Nexperia USA Inc.
27,485
In Stock
1 : $0.43000
Cut Tape (CT)
10,000 : $0.05580
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)60 V380mA (Ta)-2.3Ohm @ 380mA, 10V1.5V @ 250µA0.7 nC @ 10 V±20V20 pF @ 30 V-380mW (Ta), 2.8W (Tc)-55°C ~ 150°C (TJ)Surface MountSOT-883SC-101, SOT-883
SC-101 SOT-883
PMZ600UNEYL
MOSFET N-CH 20V 600MA DFN1006-3
Nexperia USA Inc.
31,347
In Stock
1 : $0.52000
Cut Tape (CT)
10,000 : $0.07352
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)20 V600mA (Ta)1.2V, 4.5V620mOhm @ 600mA, 4.5V950mV @ 250µA0.7 nC @ 4.5 V±8V21.3 pF @ 10 V-360mW (Ta), 2.7W (Tc)-55°C ~ 150°C (TJ)Surface MountSOT-883SC-101, SOT-883
5-DFN, 8-SO Flat Lead
NTMFS4C10NT1G
MOSFET N-CH 30V 8.2A 5DFN
onsemi
2,407
In Stock
93,000
Factory
1 : $2.14000
Cut Tape (CT)
1,500 : $0.93742
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)30 V8.2A (Ta)4.5V, 10V6.95mOhm @ 30A, 10V2.2V @ 250µA9.7 nC @ 4.5 V±20V987 pF @ 15 V-750mW (Ta), 23.6W (Tc)-55°C ~ 150°C (TJ)Surface Mount5-DFN (5x6) (8-SOFL)8-PowerTDFN, 5 Leads
3-DFN1006
DMN65D8LFB-7
MOSFET N-CH 60V 260MA 3DFN
Diodes Incorporated
0
In Stock
1 : $0.50000
Cut Tape (CT)
3,000 : $0.09634
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)60 V260mA (Ta)5V, 10V3Ohm @ 115mA, 10V2V @ 250µA-±20V25 pF @ 25 V-430mW (Ta)-55°C ~ 150°C (TJ)Surface MountX1-DFN1006-33-UFDFN
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Transistors - FETs, MOSFETs - Single


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.