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Mfr Part #
Price
Stock
Supplier
Mfr
Min Qty
DK Part #
Series
Package
Part Status
Transistor Type
Frequency
Gain
Voltage - Test
Current Rating (Amps)
Noise Figure
Current - Test
Power - Output
Voltage - Rated
Package / Case
Supplier Device Package
NI-1230H-4S
IC TRANS RF LDMOS
$1,568.99720
0 - Immediate
NXP USA Inc.NXP USA Inc.
50
Non-Stock
AFV121KHR5-ND
-
Tape & Reel (TR)
ActiveLDMOS (Dual)960MHz ~ 1.22GHz19.6dB50 V--100 mA1000W112 VSOT-979ANI-1230-4H
NI-1230S
IC TRANS RF LDMOS
$1,571.95200
0 - Immediate
NXP USA Inc.NXP USA Inc.
50
Non-Stock
AFV121KHSR5-ND
-
Tape & Reel (TR)
ActiveLDMOS (Dual)960MHz ~ 1.22GHz19.6dB50 V--100 mA1000W112 VNI-1230-4SNI-1230-4S
NI-1230-4S GW
IC TRANS RF LDMOS
$1,574.90680
0 - Immediate
NXP USA Inc.NXP USA Inc.
50
Non-Stock
AFV121KGSR5-ND
-
Tape & Reel (TR)
ActiveLDMOS (Dual)960MHz ~ 1.22GHz19.6dB50 V--100 mA1000W112 VNI-1230-4S GWNI-1230-4S GULL
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Transistors - FETs, MOSFETs - RF


RF Transistors, FETs, and MOSFETs are a semiconductor device with three terminals where the current flowing through the device is controlled by an electric field. The devices in this family are designed be used in equipment involving radio frequencies. The transistor types for amplifying or switching the signal or power include E-pHEMT, LDMOS, MESFET, N-channel, P-channel, pHEMT, silicon carbide, 2 N-channel, and 4 N-channel.