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Manufacturer
Alpha & Omega Semiconductor Inc.ANBON SEMICONDUCTOR (INT'L) LIMITEDCambridge GaN DevicesCentral Semiconductor CorpCoherent CorpComchip TechnologyDiodes IncorporatedDiotec SemiconductorEPCEPC Space, LLCEVVOGeneSiC Semiconductor
Series
-*4485650AlphaMOSAlphaSGT2™AlphaSGT™aMOS5™aMOS™AP4NA2R2HCAutomotive, AEC-Q101Automotive, AEC-Q101, STripFET™ F7
Packaging
BagBoxBulkCut Tape (CT)Digi-Reel®StripTape & Box (TB)Tape & Reel (TR)TrayTube
Product Status
ActiveDiscontinued at Digi-KeyLast Time BuyNot For New DesignsObsolete
FET Type
-N-ChannelP-Channel
Technology
-GaNFET (Cascode Gallium Nitride FET)GaNFET (Gallium Nitride)MOSFET (Metal Oxide)SiC (Silicon Carbide Junction Transistor)SiCFET (Cascode SiCJFET)SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
5 V5.5 V6 V8 V9 V10 V12 V14 V15 V16 V16.5 V18 V
Current - Continuous Drain (Id) @ 25°C
150µA (Ta)520µA (Ta)5mA (Ta)10mA (Ta)13mA (Tj)21mA (Ta)30mA (Ta)30mA (Tc)30mA (Tj)34mA (Ta)35mA (Ta)40mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
0V0V, 10V0V, 18V0.35V0.9V, 2.5V0.9V, 4.5V1.2V, 10V1.2V, 2.5V1.2V, 3V1.2V, 4.5V1.2V, 4V1.2V, 5V
Rds On (Max) @ Id, Vgs
0.29mOhm @ 50A, 10V0.3mOhm @ 200A, 10V0.35mOhm @ 50A, 10V0.36mOhm @ 100A, 10V0.39mOhm @ 100A, 10V0.4mOhm @ 150A, 10V0.4mOhm @ 30A, 10V0.4mOhm @ 50A, 10V0.42mOhm @ 50A, 10V0.44mOhm @ 88A, 10V0.45mOhm @ 30A, 10V0.45mOhm @ 30A, 7V
Vgs(th) (Max) @ Id
400mV @ 1mA (Min)400mV @ 250µA (Min)450mV @ 100µA (Min)450mV @ 1mA (Min)450mV @ 250µA (Min)450mV @ 2mA (Min)500mV @ 250µA (Min)570mV @ 1mA (Typ)600mV @ 1.2mA (Min)600mV @ 1mA (Min)600mV @ 1mA (Typ)600mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs
0.0007 nC @ 4.5 V0.044 nC @ 5 V0.064 nC @ 5 V0.12 nC @ 5 V0.15 nC @ 10 V0.18 nC @ 10 V0.21 nC @ 10 V0.22 nC @ 4.5 V0.23 nC @ 4.5 V0.233 nC @ 10 V0.28 nC @ 4.5 V0.281 nC @ 10 V
Vgs (Max)
-20V-12V-10V-8V-8V, +19V-8V, 0V-6.5V-6V-5V+0.6V, -12V+2V, -15V+3V, -16V
Input Capacitance (Ciss) (Max) @ Vds
3.5 pF @ 15 V4.5 pF @ 5 V5.2 pF @ 6 V5.5 pF @ 3 V6 pF @ 25 V6.2 pF @ 10 V6.5 pF @ 10 V6.5 pF @ 25 V6.6 pF @ 10 V7 pF @ 3 V7 pF @ 10 V7.1 pF @ 10 V
FET Feature
-Current SensingDepletion ModeSchottky Diode (Body)Schottky Diode (Isolated)Temperature Sensing Diode
Power Dissipation (Max)
400µW400µW (Ta)500µW (Ta)100mW100mW (Ta)120mW (Ta)121mW (Ta)125mW (Ta)125mW (Ta), 3W (Tc)150mW150mW (Ta)150mW (Tc)
Operating Temperature
-65°C ~ 150°C (TJ)-65°C ~ 175°C (TJ)-60°C ~ 175°C (TJ)-55°C ~ 100°C-55°C ~ 110°C (TA)-55°C ~ 125°C-55°C ~ 125°C (TA)-55°C ~ 125°C (TJ)-55°C ~ 135°C (TJ)-55°C ~ 150°C-55°C ~ 150°C (TA)-55°C ~ 150°C (TJ)
Grade
-AutomotiveMilitary
Qualification
-AEC-Q100AEC-Q101MIL-PRF-19500/542MIL-PRF-19500/543MIL-PRF-19500/555MIL-PRF-19500/556MIL-PRF-19500/557MIL-PRF-19500/562MIL-PRF-19500/564MIL-PRF-19500/570MIL-PRF-19500/592MIL-PRF-19500/595MIL-PRF-19500/601
Mounting Type
-Chassis MountSurface MountSurface Mount, Wettable FlankThrough Hole
Supplier Device Package
2-HWSON (5x4)3-CP3-CPH3-DFN (0.6x1)3-DFN (1.0 x 0.60)3-DFN (1x0.6)3-FCLGA (3.2x2.2)3-LGA (0.73x0.64)3-LGA (4.1x8)3-MCPH3-MPAK3-PICOSTAR
Package / Case
2-DFN Exposed Pad3-FLGA3-PowerDFN3-PowerSMD, Flat Leads3-PowerTDFN3-PowerUDFN3-PowerVDFN3-SIP3-SMD, Flat Leads3-SMD, No Lead3-SMD, Non-Standard3-SMD, SOT-23-3 Variant
Stocking Options
Environmental Options
Media
Marketplace Product
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