Single FETs, MOSFETs

Results: 24
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of 24
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
2,479
In Stock
1 : $9.81000
Cut Tape (CT)
2,000 : $4.06459
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
-
SiCFET (Silicon Carbide)
650 V
-
18V
-
-
-
-
-
-
-
-
-
-
Surface Mount
PG-HSOF-8-2
8-PowerSFN
IPW65R099CFD7AXKSA1
IMW65R027M1HXKSA1
MOSFET 650V NCH SIC TRENCH
Infineon Technologies
505
In Stock
1 : $19.65000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
47A (Tc)
18V
34mOhm @ 38.3A, 18V
5.7V @ 11mA
62 nC @ 18 V
+23V, -5V
2131 pF @ 400 V
-
189W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
PG-TO247-3-41
TO-247-3
1,341
In Stock
1 : $22.17000
Cut Tape (CT)
1,000 : $11.45997
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
48A
-
-
-
-
-
-
-
-
-55°C ~ 175°C
Automotive
AEC-Q101
Surface Mount
PG-TO263-7-12
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
PG-TO263-7-12
IMBG65R022M1HXTMA1
SILICON CARBIDE MOSFET PG-TO263-
Infineon Technologies
1,550
In Stock
1 : $22.67000
Cut Tape (CT)
1,000 : $12.27018
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
64A (Tc)
18V
30mOhm @ 41.1A, 18V
5.7V @ 12.3mA
67 nC @ 18 V
+23V, -5V
2288 pF @ 400 V
-
300W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-7-12
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
D2PAK-7
NTBG015N065SC1
SILICON CARBIDE MOSFET, NCHANNEL
onsemi
3,285
In Stock
4,000
Factory
1 : $40.87000
Cut Tape (CT)
800 : $26.36048
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
145A (Tc)
15V, 18V
18mOhm @ 75A, 18V
4.3V @ 25mA
283 nC @ 18 V
+22V, -8V
4689 pF @ 325 V
-
500W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
D2PAK-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
C3M0015065K
C3M0015065K
SICFET N-CH 650V 120A TO247-4L
Wolfspeed, Inc.
668
In Stock
1 : $65.44000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
120A (Tc)
15V
21mOhm @ 55.8A, 15V
3.6V @ 15.5mA
188 nC @ 15 V
+15V, -4V
5011 pF @ 400 V
-
416W (Tc)
-40°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4L
TO-247-4
156
In Stock
1 : $72.66000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
225A (Tc)
15V, 18V
9.9mOhm @ 108A, 18V
5.2V @ 47mA
289 nC @ 18 V
+20V, -5V
9170 pF @ 800 V
-
750W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-4-8
TO-247-4
438
In Stock
1 : $73.11000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
225A (Tc)
15V, 18V
9.9mOhm @ 108A, 18V
5.2V @ 47mA
289 nC @ 18 V
+20V, -5V
9170 pF @ 800 V
-
750W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-3
TO-247-3
1,706
In Stock
1 : $15.16000
Cut Tape (CT)
2,000 : $7.55927
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
-
SiCFET (Silicon Carbide)
650 V
-
18V
-
-
-
-
-
-
-
-
-
-
Surface Mount
PG-HSOF-8-2
8-PowerSFN
IMW65R030M1HXKSA1
IMW65R030M1HXKSA1
SILICON CARBIDE MOSFET, PG-TO247
Infineon Technologies
174
In Stock
1 : $18.44000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
58A (Tc)
18V
42mOhm @ 29.5A, 18V
5.7V @ 8.8mA
48 nC @ 18 V
+20V, -2V
1643 pF @ 400 V
-
197W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-3-41
TO-247-3
240
In Stock
1 : $24.49000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
70A (Tc)
15V, 18V
40.9mOhm @ 25.6A, 18V
5.2V @ 11mA
68 nC @ 18 V
+20V, -7V
2160 pF @ 800 V
-
273W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-4-U02
TO-247-4
IMW65R039M1HXKSA1
IMW65R039M1HXKSA1
SILICON CARBIDE MOSFET, PG-TO247
Infineon Technologies
125
In Stock
1 : $13.77000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
46A (Tc)
18V
50mOhm @ 25A, 18V
5.7V @ 7.5mA
41 nC @ 18 V
+20V, -2V
1393 pF @ 400 V
-
176W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-3-41
TO-247-3
IMZA65R048M1HXKSA1
IMZA65R048M1HXKSA1
MOSFET 650V NCH SIC TRENCH
Infineon Technologies
416
In Stock
1 : $14.09000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
39A (Tc)
18V
64mOhm @ 20.1A, 18V
5.7V @ 6mA
33 nC @ 18 V
+23V, -5V
1118 pF @ 400 V
-
125W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
PG-TO247-4-3
TO-247-4
IMZA65R057M1HXKSA1
IMZA65R057M1HXKSA1
SILICON CARBIDE MOSFET, PG-TO247
Infineon Technologies
150
In Stock
1 : $10.67000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
35A (Tc)
18V
74mOhm @ 16.7A, 18V
5.7V @ 5mA
28 nC @ 18 V
+20V, -2V
930 pF @ 400 V
-
133W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-4-3
TO-247-4
PG-TO263-7-12
IMBG65R030M1HXTMA1
SILICON CARBIDE MOSFET PG-TO263-
Infineon Technologies
228
In Stock
1 : $18.56000
Cut Tape (CT)
1,000 : $10.83973
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
63A (Tc)
18V
42mOhm @ 29.5A, 18V
5.7V @ 8.8mA
49 nC @ 18 V
+23V, -5V
1643 pF @ 400 V
-
234W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-7-12
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
1,843
In Stock
1 : $6.88000
Cut Tape (CT)
2,000 : $2.52089
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
-
SiCFET (Silicon Carbide)
650 V
-
18V
-
-
-
-
-
-
-
-
-
-
Surface Mount
PG-HSOF-8-2
8-PowerSFN
1,569
In Stock
1 : $7.60000
Cut Tape (CT)
2,000 : $2.88804
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
-
SiCFET (Silicon Carbide)
650 V
-
18V
-
-
-
-
-
-
-
-
-
-
Surface Mount
PG-HSOF-8-2
8-PowerSFN
1,799
In Stock
1 : $11.26000
Cut Tape (CT)
2,000 : $4.88932
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
-
SiCFET (Silicon Carbide)
650 V
-
18V
-
-
-
-
-
-
-
-
-
-
Surface Mount
PG-HSOF-8-2
8-PowerSFN
1,926
In Stock
1 : $12.55000
Cut Tape (CT)
2,000 : $5.65578
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
-
SiCFET (Silicon Carbide)
650 V
-
18V
-
-
-
-
-
-
-
-
-
-
Surface Mount
PG-HSOF-8-2
8-PowerSFN
PG-TO247-4-3
IMZA65R039M1HXKSA1
SILICON CARBIDE MOSFET, PG-TO247
Infineon Technologies
51
In Stock
1 : $15.36000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
50A (Tc)
18V
50mOhm @ 25A, 18V
5.7V @ 7.5mA
41 nC @ 18 V
+20V, -2V
1393 pF @ 400 V
-
176W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-4-3
TO-247-4
IMZA65R027M1HXKSA1
IMZA65R027M1HXKSA1
MOSFET 650V NCH SIC TRENCH
Infineon Technologies
0
In Stock
Check Lead Time
1 : $19.73000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
59A (Tc)
18V
34mOhm @ 38.3A, 18V
5.7V @ 11mA
63 nC @ 18 V
+23V, -5V
2131 pF @ 400 V
-
189W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
PG-TO247-4-3
TO-247-4
PG-TO247-3
IPW65R019C7FKSA1
MOSFET N-CH 650V 75A TO247-3
Infineon Technologies
0
In Stock
Check Lead Time
1 : $28.27000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
650 V
75A (Tc)
10V
19mOhm @ 58.3A, 10V
4V @ 2.92mA
215 nC @ 10 V
±20V
9900 pF @ 400 V
-
446W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
PG-TO247-3
TO-247-3
PG-TO263-7-12
IMBG65R057M1HXTMA1
SILICON CARBIDE MOSFET PG-TO263-
Infineon Technologies
11
In Stock
1 : $12.77000
Cut Tape (CT)
1,000 : $5.57255
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
39A (Tc)
18V
74mOhm @ 16.7A, 18V
5.7V @ 5mA
28 nC @ 18 V
+23V, -5V
930 pF @ 400 V
-
161W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-7-12
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
PG-TO263-7-12
IMBG65R048M1HXTMA1
SILICON CARBIDE MOSFET PG-TO263-
Infineon Technologies
15
In Stock
1 : $14.09000
Cut Tape (CT)
1,000 : $6.55503
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
45A (Tc)
18V
64mOhm @ 20.1A, 18V
5.7V @ 6mA
33 nC @ 18 V
+23V, -5V
1118 pF @ 400 V
-
183W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-7-12
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Showing
of 24

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.