Single FETs, MOSFETs

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	Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
	IRLML6346TRPBF MOSFET N-CH 30V 3.4A SOT23 Infineon Technologies	35,429 In Stock	1 : $0.64000 Cut Tape (CT) 3,000 : $0.14025 Tape & Reel (TR)	HEXFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	3.4A (Ta)	2.5V, 4.5V	63mOhm @ 3.4A, 4.5V	1.1V @ 10µA	2.9 nC @ 4.5 V	±12V	270 pF @ 24 V	-	1.3W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	Micro3™/SOT-23	TO-236-3, SC-59, SOT-23-3
	BSZ0905PNSATMA1 MOSFET P-CH 30V 40A TDSON-8 Infineon Technologies	0 In Stock	Obsolete	OptiMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Obsolete	P-Channel	MOSFET (Metal Oxide)	30 V	40A (Tc)	6V, 10V	8.6mOhm @ 20A, 10V	1.9V @ 105µA	43.2 nC @ 10 V	±25V	3190 pF @ 15 V	-	69W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-TDSON-8	8-PowerTDFN

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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.