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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Digi-Key Programmable
Driven Configuration
Channel Type
Number of Drivers
Gate Type
Voltage - Supply
Logic Voltage - VIL, VIH
Current - Peak Output (Source, Sink)
Input Type
High Side Voltage - Max (Bootstrap)
Rise / Fall Time (Typ)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
20-SOIC
2ED020I12FIXUMA1
IC GATE DRVR HALF-BRIDGE DSO18-2
Infineon Technologies
11,214
In Stock
1 : $8.39000
Cut Tape (CT)
1,000 : $3.97142
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveNot VerifiedHalf-BridgeIndependent2IGBT, N-Channel MOSFET14V ~ 18V0.8V, 2V1A, 2AInverting1200 V20ns, 20ns-40°C ~ 150°C (TJ)Surface Mount18-SOIC (0.295", 7.50mm Width)PG-DSO-18-2
SOT25
IRS44273LTRPBF
IC GATE DRVR LOW-SIDE SOT23-5
Infineon Technologies
28,907
In Stock
1 : $1.82000
Cut Tape (CT)
3,000 : $0.77377
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveNot VerifiedLow-SideSingle1IGBT, N-Channel MOSFET10.2V ~ 20V0.8V, 2.5V1.5A, 1.5ANon-Inverting-25ns, 25ns-40°C ~ 150°C (TJ)Surface MountSC-74A, SOT-753SOT-23-5
1ED44173N01BXTSA1
1ED44175N01BXTSA1
IC GATE DRVR LOW-SIDE SOT23-6
Infineon Technologies
4,841
In Stock
1 : $1.75000
Cut Tape (CT)
3,000 : $0.66305
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveNot VerifiedLow-SideSingle1IGBT, N-Channel MOSFET12.7V ~ 20V1.2V, 1.9V2.6A, 2.6ANon-Inverting-5ns, 5ns-40°C ~ 125°C (TA)Surface MountSOT-23-6PG-SOT23-6-3
28-SSOP
IR2233STRPBF
IC GATE DRVR HALF-BRIDGE 28SOIC
Infineon Technologies
990
In Stock
1 : $14.47000
Cut Tape (CT)
1,000 : $8.21016
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveNot VerifiedHalf-Bridge3-Phase6IGBT, N-Channel MOSFET10V ~ 20V0.8V, 2V250mA, 500mAInverting1200 V90ns, 40ns125°C (TJ)Surface Mount28-SOIC (0.295", 7.50mm Width)28-SOIC
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Gate Drivers


Gate driver Power Management Integrated Circuits (PMICs) are devices that provide isolation, amplification, reference shifting, bootstrapping, or other functions necessary to interface signals from a control device in a power conversion application to the semiconductor devices (usually FETs or IGBTs) through which the power being controlled passes. The exact functions offered by any particular device vary, but correlate with the semiconductor configuration it is adapted to drive.