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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-247N
SCT3160KLGC11
SICFET N-CH 1200V 17A TO247N
Rohm Semiconductor
707
In Stock
1 : $16.55000
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ActiveN-ChannelSiCFET (Silicon Carbide)1200 V17A (Tc)18V208mOhm @ 5A, 18V5.6V @ 2.5mA42 nC @ 18 V+22V, -4V398 pF @ 800 V-103W (Tc)175°C (TJ)Through HoleTO-247NTO-247-3
TO-247N
SCT3080KLGC11
SICFET N-CH 1200V 31A TO247N
Rohm Semiconductor
3,300
In Stock
1 : $33.31000
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Tube
ActiveN-ChannelSiCFET (Silicon Carbide)1200 V31A (Tc)18V104mOhm @ 10A, 18V5.6V @ 5mA60 nC @ 18 V+22V, -4V785 pF @ 800 V-165W (Tc)175°C (TJ)Through HoleTO-247NTO-247-3
TO-247N
SCT3030ALGC11
SICFET N-CH 650V 70A TO247N
Rohm Semiconductor
6,973
In Stock
1 : $49.12000
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Tube
ActiveN-ChannelSiCFET (Silicon Carbide)650 V70A (Tc)18V39mOhm @ 27A, 18V5.6V @ 13.3mA104 nC @ 18 V+22V, -4V1526 pF @ 500 V-262W (Tc)175°C (TJ)Through HoleTO-247NTO-247-3
TO-247N
SCT3040KLGC11
SICFET N-CH 1200V 55A TO247N
Rohm Semiconductor
1,648
In Stock
1 : $62.70000
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ActiveN-ChannelSiCFET (Silicon Carbide)1200 V55A (Tc)18V52mOhm @ 20A, 18V5.6V @ 10mA107 nC @ 18 V+22V, -4V1337 pF @ 800 V-262W (Tc)175°C (TJ)Through HoleTO-247NTO-247-3
TO-247N
SCT3022KLGC11
SICFET N-CH 1200V 95A TO247N
Rohm Semiconductor
388
In Stock
1 : $82.61000
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Tube
ActiveN-ChannelSiCFET (Silicon Carbide)1200 V95A (Tc)18V28.6mOhm @ 36A, 18V5.6V @ 18.2mA178 nC @ 10 V+22V, -4V2879 pF @ 800 V-427W175°C (TJ)Through HoleTO-247NTO-247-3
TO-247N
SCT3022ALGC11
SICFET N-CH 650V 93A TO247N
Rohm Semiconductor
1,773
In Stock
1 : $83.64000
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Tube
ActiveN-ChannelSiCFET (Silicon Carbide)650 V93A (Tc)18V28.6mOhm @ 36A, 18V5.6V @ 18.2mA133 nC @ 18 V+22V, -4V2208 pF @ 500 V-339W (Tc)175°C (TJ)Through HoleTO-247NTO-247-3
TO-247N
SCT3040KLHRC11
SICFET N-CH 1200V 55A TO247N
Rohm Semiconductor
891
In Stock
1 : $88.91000
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Tube
ActiveN-ChannelSiCFET (Silicon Carbide)1200 V55A (Ta)18V52mOhm @ 20A, 18V5.6V @ 10mA107 nC @ 18 V+22V, -4V1337 pF @ 800 V-262W175°C (TJ)Through HoleTO-247NTO-247-3
TO-247N
SCT3030KLGC11
SICFET N-CH 1200V 72A TO247N
Rohm Semiconductor
994
In Stock
1 : $127.96000
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ActiveN-ChannelSiCFET (Silicon Carbide)1200 V72A (Tc)18V39mOhm @ 27A, 18V5.6V @ 13.3mA131 nC @ 18 V+22V, -4V2222 pF @ 800 V-339W (Tc)175°C (TJ)Through HoleTO-247NTO-247-3
TO-247N
SCT3017ALHRC11
SICFET N-CH 650V 118A TO247N
Rohm Semiconductor
754
In Stock
1 : $197.76000
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Tube
ActiveN-ChannelSiCFET (Silicon Carbide)650 V118A (Tc)18V22.1mOhm @ 47A, 18V5.6V @ 23.5mA172 nC @ 18 V+22V, -4V2884 pF @ 500 V-427W175°C (TJ)Through HoleTO-247NTO-247-3
TO-247-3 AC EP
IRFP250MPBF
MOSFET N-CH 200V 30A TO247AC
Infineon Technologies
3,077
In Stock
1 : $3.21000
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Tube
ActiveN-ChannelMOSFET (Metal Oxide)200 V30A (Tc)10V75mOhm @ 18A, 10V4V @ 250µA123 nC @ 10 V±20V2159 pF @ 25 V-214W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-247ACTO-247-3
TO-247-3 AC EP
IRFP150NPBF
MOSFET N-CH 100V 42A TO247AC
Infineon Technologies
3,383
In Stock
1 : $3.54000
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Tube
ActiveN-ChannelMOSFET (Metal Oxide)100 V42A (Tc)10V36mOhm @ 23A, 10V4V @ 250µA110 nC @ 10 V±20V1900 pF @ 25 V-160W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-247ACTO-247-3
TO-247-3 AC EP
IRFP250NPBF
MOSFET N-CH 200V 30A TO247AC
Infineon Technologies
14,494
In Stock
1 : $4.58000
Tube
Tube
ActiveN-ChannelMOSFET (Metal Oxide)200 V30A (Tc)10V75mOhm @ 18A, 10V4V @ 250µA123 nC @ 10 V±20V2159 pF @ 25 V-214W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-247ACTO-247-3
TO-247-3 AC EP
IRFP240PBF
MOSFET N-CH 200V 20A TO247-3
Vishay Siliconix
6,384
In Stock
1 : $4.65000
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ActiveN-ChannelMOSFET (Metal Oxide)200 V20A (Tc)10V180mOhm @ 12A, 10V4V @ 250µA70 nC @ 10 V±20V1300 pF @ 25 V-150W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-247ACTO-247-3
TO-247-3 AC EP
IRFP260MPBF
MOSFET N-CH 200V 50A TO247AC
Infineon Technologies
9,266
In Stock
1 : $4.67000
Tube
Tube
ActiveN-ChannelMOSFET (Metal Oxide)200 V50A (Tc)10V40mOhm @ 28A, 10V4V @ 250µA234 nC @ 10 V±20V4057 pF @ 25 V-300W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-247ACTO-247-3
TO-247-3 AC EP
SIHG20N50C-E3
MOSFET N-CH 500V 20A TO247AC
Vishay Siliconix
8,128
In Stock
1 : $4.78000
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ActiveN-ChannelMOSFET (Metal Oxide)500 V20A (Tc)10V270mOhm @ 10A, 10V5V @ 250µA76 nC @ 10 V±30V2942 pF @ 25 V-250W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-247ACTO-247-3
TO-247-3 AC EP
IRFP3710PBF
MOSFET N-CH 100V 57A TO247AC
Infineon Technologies
25,014
In Stock
1 : $4.84000
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Tube
ActiveN-ChannelMOSFET (Metal Oxide)100 V57A (Tc)10V25mOhm @ 28A, 10V4V @ 250µA190 nC @ 10 V±20V3000 pF @ 25 V-200W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-247ACTO-247-3
TO-247-3 AC EP
IRFP3206PBF
MOSFET N-CH 60V 120A TO247AC
Infineon Technologies
11,632
In Stock
1 : $5.98000
Tube
Tube
ActiveN-ChannelMOSFET (Metal Oxide)60 V120A (Tc)10V3mOhm @ 75A, 10V4V @ 150µA170 nC @ 10 V±20V6540 pF @ 50 V-280W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-247ACTO-247-3
TO-247-3 AC EP
IRFP350PBF
MOSFET N-CH 400V 16A TO247-3
Vishay Siliconix
2,950
In Stock
1 : $6.02000
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ActiveN-ChannelMOSFET (Metal Oxide)400 V16A (Tc)10V300mOhm @ 9.6A, 10V4V @ 250µA150 nC @ 10 V±20V2600 pF @ 25 V-190W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-247ACTO-247-3
TO-247-3 AC EP
IRFP260NPBF
MOSFET N-CH 200V 50A TO247AC
Infineon Technologies
23,934
In Stock
1 : $6.37000
Tube
Tube
ActiveN-ChannelMOSFET (Metal Oxide)200 V50A (Tc)10V40mOhm @ 28A, 10V4V @ 250µA234 nC @ 10 V±20V4057 pF @ 25 V-300W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-247ACTO-247-3
TO-247-3 AC EP
IRFP7430PBF
MOSFET N-CH 40V 195A TO247AC
Infineon Technologies
3,339
In Stock
1 : $6.60000
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Tube
ActiveN-ChannelMOSFET (Metal Oxide)40 V195A (Tc)6V, 10V1.3mOhm @ 100A, 10V3.9V @ 250µA460 nC @ 10 V±20V14240 pF @ 25 V-366W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-247ACTO-247-3
G2R1000MT17D
G3R350MT12D
SIC MOSFET N-CH 11A TO247-3
GeneSiC Semiconductor
14,522
In Stock
1 : $6.83000
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Tube
ActiveN-ChannelSiCFET (Silicon Carbide)1200 V11A (Tc)15V420mOhm @ 4A, 15V2.69V @ 2mA12 nC @ 15 V±15V334 pF @ 800 V-74W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-247-3TO-247-3
G2R1000MT17D
G2R1000MT17D
SIC MOSFET N-CH 4A TO247-3
GeneSiC Semiconductor
7,815
In Stock
1 : $7.84000
Tube
Tube
ActiveN-ChannelSiCFET (Silicon Carbide)1700 V5A (Tc)20V1.2Ohm @ 2A, 20V5.5V @ 500µA11 nC @ 20 V+25V, -10V111 pF @ 1000 V-44W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-247-3TO-247-3
TO-247-3 AC EP
IRFP460APBF
MOSFET N-CH 500V 20A TO247-3
Vishay Siliconix
2,730
In Stock
1 : $7.87000
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ActiveN-ChannelMOSFET (Metal Oxide)500 V20A (Tc)10V270mOhm @ 12A, 10V4V @ 250µA105 nC @ 10 V±30V3100 pF @ 25 V-280W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-247ACTO-247-3
TO-247-3 AC EP
IRFP3703PBF
MOSFET N-CH 30V 210A TO247AC
Infineon Technologies
122
In Stock
1 : $7.90000
Tube
Tube
Not For New DesignsN-ChannelMOSFET (Metal Oxide)30 V210A (Tc)7V, 10V2.8mOhm @ 76A, 10V4V @ 250µA209 nC @ 10 V±20V8250 pF @ 25 V-3.8W (Ta), 230W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-247ACTO-247-3
TO-247-3 AC EP
IRFP360PBF
MOSFET N-CH 400V 23A TO247-3
Vishay Siliconix
23,073
In Stock
1 : $8.00000
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Tube
ActiveN-ChannelMOSFET (Metal Oxide)400 V23A (Tc)10V200mOhm @ 14A, 10V4V @ 250µA210 nC @ 10 V±20V4500 pF @ 25 V-280W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-247ACTO-247-3
Showing
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TO-247-3 Transistors - FETs, MOSFETs - Single


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.