TO-247-3 Transistors - FETs, MOSFETs - Single | Electronic Components Distributor DigiKey

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

SCT3160KLGC11 SICFET N-CH 1200V 17A TO247N Rohm Semiconductor	707 In Stock	1 : $16.55000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	17A (Tc)	18V	208mOhm @ 5A, 18V	5.6V @ 2.5mA	42 nC @ 18 V	+22V, -4V	398 pF @ 800 V	-	103W (Tc)	175°C (TJ)	Through Hole	TO-247N	TO-247-3
SCT3080KLGC11 SICFET N-CH 1200V 31A TO247N Rohm Semiconductor	3,300 In Stock	1 : $33.31000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	31A (Tc)	18V	104mOhm @ 10A, 18V	5.6V @ 5mA	60 nC @ 18 V	+22V, -4V	785 pF @ 800 V	-	165W (Tc)	175°C (TJ)	Through Hole	TO-247N	TO-247-3
SCT3030ALGC11 SICFET N-CH 650V 70A TO247N Rohm Semiconductor	6,973 In Stock	1 : $49.12000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	70A (Tc)	18V	39mOhm @ 27A, 18V	5.6V @ 13.3mA	104 nC @ 18 V	+22V, -4V	1526 pF @ 500 V	-	262W (Tc)	175°C (TJ)	Through Hole	TO-247N	TO-247-3
SCT3040KLGC11 SICFET N-CH 1200V 55A TO247N Rohm Semiconductor	1,648 In Stock	1 : $62.70000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	55A (Tc)	18V	52mOhm @ 20A, 18V	5.6V @ 10mA	107 nC @ 18 V	+22V, -4V	1337 pF @ 800 V	-	262W (Tc)	175°C (TJ)	Through Hole	TO-247N	TO-247-3
SCT3022KLGC11 SICFET N-CH 1200V 95A TO247N Rohm Semiconductor	388 In Stock	1 : $82.61000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	95A (Tc)	18V	28.6mOhm @ 36A, 18V	5.6V @ 18.2mA	178 nC @ 10 V	+22V, -4V	2879 pF @ 800 V	-	427W	175°C (TJ)	Through Hole	TO-247N	TO-247-3
SCT3022ALGC11 SICFET N-CH 650V 93A TO247N Rohm Semiconductor	1,773 In Stock	1 : $83.64000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	93A (Tc)	18V	28.6mOhm @ 36A, 18V	5.6V @ 18.2mA	133 nC @ 18 V	+22V, -4V	2208 pF @ 500 V	-	339W (Tc)	175°C (TJ)	Through Hole	TO-247N	TO-247-3
SCT3040KLHRC11 SICFET N-CH 1200V 55A TO247N Rohm Semiconductor	891 In Stock	1 : $88.91000 Tube	Automotive, AEC-Q101	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	55A (Ta)	18V	52mOhm @ 20A, 18V	5.6V @ 10mA	107 nC @ 18 V	+22V, -4V	1337 pF @ 800 V	-	262W	175°C (TJ)	Through Hole	TO-247N	TO-247-3
SCT3030KLGC11 SICFET N-CH 1200V 72A TO247N Rohm Semiconductor	994 In Stock	1 : $127.96000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	72A (Tc)	18V	39mOhm @ 27A, 18V	5.6V @ 13.3mA	131 nC @ 18 V	+22V, -4V	2222 pF @ 800 V	-	339W (Tc)	175°C (TJ)	Through Hole	TO-247N	TO-247-3
SCT3017ALHRC11 SICFET N-CH 650V 118A TO247N Rohm Semiconductor	754 In Stock	1 : $197.76000 Tube	Automotive, AEC-Q101	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	118A (Tc)	18V	22.1mOhm @ 47A, 18V	5.6V @ 23.5mA	172 nC @ 18 V	+22V, -4V	2884 pF @ 500 V	-	427W	175°C (TJ)	Through Hole	TO-247N	TO-247-3
IRFP250MPBF MOSFET N-CH 200V 30A TO247AC Infineon Technologies	3,077 In Stock	1 : $3.21000 Tube	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	200 V	30A (Tc)	10V	75mOhm @ 18A, 10V	4V @ 250µA	123 nC @ 10 V	±20V	2159 pF @ 25 V	-	214W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247AC	TO-247-3
IRFP150NPBF MOSFET N-CH 100V 42A TO247AC Infineon Technologies	3,383 In Stock	1 : $3.54000 Tube	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	42A (Tc)	10V	36mOhm @ 23A, 10V	4V @ 250µA	110 nC @ 10 V	±20V	1900 pF @ 25 V	-	160W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247AC	TO-247-3
IRFP250NPBF MOSFET N-CH 200V 30A TO247AC Infineon Technologies	14,494 In Stock	1 : $4.58000 Tube	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	200 V	30A (Tc)	10V	75mOhm @ 18A, 10V	4V @ 250µA	123 nC @ 10 V	±20V	2159 pF @ 25 V	-	214W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247AC	TO-247-3
IRFP240PBF MOSFET N-CH 200V 20A TO247-3 Vishay Siliconix	6,384 In Stock	1 : $4.65000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	200 V	20A (Tc)	10V	180mOhm @ 12A, 10V	4V @ 250µA	70 nC @ 10 V	±20V	1300 pF @ 25 V	-	150W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247AC	TO-247-3
IRFP260MPBF MOSFET N-CH 200V 50A TO247AC Infineon Technologies	9,266 In Stock	1 : $4.67000 Tube	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	200 V	50A (Tc)	10V	40mOhm @ 28A, 10V	4V @ 250µA	234 nC @ 10 V	±20V	4057 pF @ 25 V	-	300W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247AC	TO-247-3
SIHG20N50C-E3 MOSFET N-CH 500V 20A TO247AC Vishay Siliconix	8,128 In Stock	1 : $4.78000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	20A (Tc)	10V	270mOhm @ 10A, 10V	5V @ 250µA	76 nC @ 10 V	±30V	2942 pF @ 25 V	-	250W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247AC	TO-247-3
IRFP3710PBF MOSFET N-CH 100V 57A TO247AC Infineon Technologies	25,014 In Stock	1 : $4.84000 Tube	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	57A (Tc)	10V	25mOhm @ 28A, 10V	4V @ 250µA	190 nC @ 10 V	±20V	3000 pF @ 25 V	-	200W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247AC	TO-247-3
IRFP3206PBF MOSFET N-CH 60V 120A TO247AC Infineon Technologies	11,632 In Stock	1 : $5.98000 Tube	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	60 V	120A (Tc)	10V	3mOhm @ 75A, 10V	4V @ 150µA	170 nC @ 10 V	±20V	6540 pF @ 50 V	-	280W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247AC	TO-247-3
IRFP350PBF MOSFET N-CH 400V 16A TO247-3 Vishay Siliconix	2,950 In Stock	1 : $6.02000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	400 V	16A (Tc)	10V	300mOhm @ 9.6A, 10V	4V @ 250µA	150 nC @ 10 V	±20V	2600 pF @ 25 V	-	190W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247AC	TO-247-3
IRFP260NPBF MOSFET N-CH 200V 50A TO247AC Infineon Technologies	23,934 In Stock	1 : $6.37000 Tube	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	200 V	50A (Tc)	10V	40mOhm @ 28A, 10V	4V @ 250µA	234 nC @ 10 V	±20V	4057 pF @ 25 V	-	300W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247AC	TO-247-3
IRFP7430PBF MOSFET N-CH 40V 195A TO247AC Infineon Technologies	3,339 In Stock	1 : $6.60000 Tube	HEXFET®, StrongIRFET™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	40 V	195A (Tc)	6V, 10V	1.3mOhm @ 100A, 10V	3.9V @ 250µA	460 nC @ 10 V	±20V	14240 pF @ 25 V	-	366W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247AC	TO-247-3
G3R350MT12D SIC MOSFET N-CH 11A TO247-3 GeneSiC Semiconductor	14,522 In Stock	1 : $6.83000 Tube	G3R™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	11A (Tc)	15V	420mOhm @ 4A, 15V	2.69V @ 2mA	12 nC @ 15 V	±15V	334 pF @ 800 V	-	74W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
G2R1000MT17D SIC MOSFET N-CH 4A TO247-3 GeneSiC Semiconductor	7,815 In Stock	1 : $7.84000 Tube	G2R™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1700 V	5A (Tc)	20V	1.2Ohm @ 2A, 20V	5.5V @ 500µA	11 nC @ 20 V	+25V, -10V	111 pF @ 1000 V	-	44W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
IRFP460APBF MOSFET N-CH 500V 20A TO247-3 Vishay Siliconix	2,730 In Stock	1 : $7.87000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	20A (Tc)	10V	270mOhm @ 12A, 10V	4V @ 250µA	105 nC @ 10 V	±30V	3100 pF @ 25 V	-	280W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247AC	TO-247-3
IRFP3703PBF MOSFET N-CH 30V 210A TO247AC Infineon Technologies	122 In Stock	1 : $7.90000 Tube	HEXFET®	Tube	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	30 V	210A (Tc)	7V, 10V	2.8mOhm @ 76A, 10V	4V @ 250µA	209 nC @ 10 V	±20V	8250 pF @ 25 V	-	3.8W (Ta), 230W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247AC	TO-247-3
IRFP360PBF MOSFET N-CH 400V 23A TO247-3 Vishay Siliconix	23,073 In Stock	1 : $8.00000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	400 V	23A (Tc)	10V	200mOhm @ 14A, 10V	4V @ 250µA	210 nC @ 10 V	±20V	4500 pF @ 25 V	-	280W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247AC	TO-247-3

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TO-247-3 Transistors - FETs, MOSFETs - Single

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.

TO-247-3 Transistors - FETs, MOSFETs - Single

TO-247-3 Transistors - FETs, MOSFETs - Single

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