N-Channel 800 V 2.9A (Tc) 62.5W (Tc) Surface Mount TO-252AA
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SIHD2N80AE-GE3

DigiKey Part Number
742-SIHD2N80AE-GE3-ND
Manufacturer
Vishay Siliconix
Manufacturer Product Number
SIHD2N80AE-GE3
Description
MOSFET N-CH 800V 2.9A DPAK
Manufacturer Standard Lead Time
12 Weeks
Customer Reference
Detailed Description
N-Channel 800 V 2.9A (Tc) 62.5W (Tc) Surface Mount TO-252AA
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Vishay Siliconix
Series
E
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
2.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2.9Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
10.5 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
180 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
62.5W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Surface Mount
Supplier Device Package
TO-252AA
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Base Product Number
SIHD2
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In-Stock: 1,579
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Quantity
All prices are in CAD
Tube
QuantityUnit PriceExt Price
1$2.71000$2.71
10$1.72100$17.21
100$1.15390$115.39
500$0.91118$455.59
1,000$0.83309$833.09
3,000$0.73396$2,201.88
6,000$0.68407$4,104.42
12,000$0.67714$8,125.68
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.