TP65H150LSG Renesas Electronics Corporation | Discrete Semiconductor Products

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TP65H150LSG
DigiKey Part Number	1707-TP65H150LSG-ND
Manufacturer	Renesas Electronics Corporation
Manufacturer Product Number	TP65H150LSG
Description	GANFET N-CH 650V 15A 3PQFN
Customer Reference
Detailed Description	N-Channel 650 V 15A (Tc) 69W (Tc) Surface Mount 3-PQFN (8x8)
Datasheet	Datasheet

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Renesas Electronics Corporation
Series	-
Packaging	Tube
Part Status	Obsolete
FET Type	N-Channel
Technology	GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	15A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	180mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	4.8V @ 500µA
Gate Charge (Qg) (Max) @ Vgs	7.1 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	576 pF @ 400 V
FET Feature	-
Power Dissipation (Max)	69W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	3-PQFN (8x8)
Package / Case	3-PowerDFN