TO-262-3 Long Leads

FQI12N60CTU

Digi-Key Part Number
FQI12N60CTU-ND
Manufacturer
ON Semiconductor
Manufacturer Product Number
FQI12N60CTU
Supplier
Description
MOSFET N-CH 600V 12A I2PAK
Detailed Description
N-Channel 600 V 12A (Tc) 3.13W (Ta), 225W (Tc) Through Hole I2PAK (TO-262)
Customer Reference
Datasheet Datasheet
Product Attributes
Type
Description
Select
Category
Mfr
ON Semiconductor
Series
Package
Tube
Part Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
650mOhm @ 6A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
63 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
2290 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3.13W (Ta), 225W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
I2PAK (TO-262)
Package / Case
TO-262-3 Long Leads, I²Pak, TO-262AA
Base Product Number
Environmental & Export Classifications
AttributeDescription
Moisture Sensitivity Level (MSL)1 (Unlimited)
REACH StatusREACH Unaffected
ECCNEAR99
HTSUS8541.29.0095
Additional Resources
AttributeDescription
Standard Package1,000