PG-TO247-3
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IPW50R299CPFKSA1

Digi-Key Part Number
IPW50R299CPFKSA1-ND
Manufacturer
Infineon Technologies
Manufacturer Product Number
IPW50R299CPFKSA1
Supplier
Description
MOSFET N-CH 550V 12A TO247-3
Detailed Description
N-Channel 550 V 12A (Tc) 104W (Tc) Through Hole PG-TO247-3-1
Customer Reference
Datasheet Datasheet
Product Attributes
Type
Description
Select
Category
Mfr
Infineon Technologies
Series
Package
Tube
Part Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
550 V
Current - Continuous Drain (Id) @ 25°C
12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
299mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id
3.5V @ 440µA
Gate Charge (Qg) (Max) @ Vgs
31 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1190 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
104W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO247-3-1
Package / Case
TO-247-3
Environmental & Export Classifications
AttributeDescription
Moisture Sensitivity Level (MSL)1 (Unlimited)
ECCNEAR99
HTSUS8541.29.0095

Other Suppliers on Digi-Key

1,580In Stock
Sold by Rochester Electronics, LLC
Additional Resources
AttributeDescription
Other Names
IPW50R299CP
SP000301163
IPW50R299CP-ND
INFINFIPW50R299CPFKSA1
2156-IPW50R299CPFKSA1-IT
Standard Package240
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