DMWS120

Diodes Incorporated

Discrete Semiconductor Products | Single FETs, MOSFETs

Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-247-4 Top
DMWS120H100SM4
SIC MOSFET BVDSS: >1000V TO247-4
Diodes Incorporated
27
In Stock
1,830
Factory
1 : $26.29000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
37.2A (Tc)
15V
100mOhm @ 20A, 15V
3.5V @ 5mA
52 nC @ 15 V
+19V, -8V
1516 pF @ 1000 V
-
208W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247-4
TO-247-4
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