Solutions for Energy Infrastructure

onsemi's NCD570x Insulated-Gate Bipolar Transistor (IGBT) Gate Drivers are high-current, high-performance devices for high power applications, such as solar inverters, motor control, and Uninterruptable Power Supplies (UPSs). These Gate Drivers are highly-integrated, offering a cost-effective solution by eliminating many external components and integrating protection features.

Current consumption monitoring provides critical information assisting in the safety and diagnostic functions of a system. ON Semiconductors offers current sense amplifiers that integrate external resistors to offer a higher accuracy, smaller solution, in addition to the cost effective standalone Op Amps.

onsemi's 650 V & 1200 V Insulated Gate Bipolar Transistors (IGBTs) feature robust and cost effective Ultra Field Stop Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.

onsemi's 650 V SuperFET III series offers high performance super junction MOSFETs specifically designed for high power density. Featuring best-in-class FOM and Eoss, the SuperFET III technology reduces RDS(ON) by more than 40% in the same package size compared to previous industry-leading technology. This allows product designers to utilize the reduced package size or the increased power in the same footprint. The SuperFET III features a robust body diode and well-balanced switching behavior.

These MOSFETs are produced using onsemi's advanced PowerTrench® process that incorporates Shielded Gate technology. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.

Power Integrated Modules leverage onsemi's extensive experience in automotive ignition IGBTs and intelligent power module (IPM) development, as well as packaging expertise to provide power solutions fully qualified to the highest industry standards. In addition, onsemi module solutions provide customers with a fully-integrated supply chain for silicon and packaging, ensuring high quality and cost efficiencies.

The NXH80B120L2Q0SG is a power module containing a dual boost stage consisting of two 40A/1200V IGBTs, two 15A/1200V SiC diodes, and two 25A/1600V anti-parallel diodes for the IGBTs. Two additional 25A/1600V bypass rectifiers used for inrush current limit are included. An on-board thermistor is included.

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.

onsemi's portfolio of High-Voltage Rectifiers includes best-in-class solutions for a wide variety of applications offering customers flexibility for their design requirements.