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The landscape for energy generation, distribution, and storage is rapidly evolving to fulfill targets set by government policy and increasing consumption. Heightened efficiency targets, reductions of CO2 emissions, and a focus on renewable and clean energy are key factors in this Energy Infrastructure Evolution.
ON Semiconductor offers a comprehensive portfolio of energy efficient solutions that serve the demanding needs of high-power applications including Silicon Carbide (SiC) Diodes, Intelligent Power Modules, and Current Sense Amplifiers.
Solar power modules are one of the most common commercial and consumer choices for generating renewable energy. This renewable energy comes with the challenge of integrating a variable power source into a standardized electrical network. Solar inverters play a crucial role in rectifying the DC solar panel into an AC electrical grid. In addition to efficient AC/DC conversion, solar inverters are commonly used to monitor the non-linear response of a photovoltaic diodes to ensure the maximum power is produced. ON Semiconductor offers a complete solution that is design to sense, protect, and control energy from the cell to the grid.
An uninterruptible power supply is vital for digital networks that are time and data dependent. Computational analysis, data storage and distribution, telecommunication systems, and even select cities are all dependent on a constant power source that is promised with UPS. These protective power sources are commonly integrated into the flow of power. This ensures that battery or other storage devices are constantly being monitored and energized so that in the event of system failure the UPS is at full support capacity. This monitoring, charging, and AC/DC rectification requires silicon that is not only capable but also efficient at high current states. ON Semiconductor offers a complete energy efficient solution that is design to control and convert electrical power whether or not there is power failure.
Electric vehicle charging stations are the most essential components to the infrastructural make-up for EVs. Unlike solar conversion or backup power, EV charging stations are on the application edge. These stations need to be able to communicate and transfer power in a standardized format that allows for wide adaptability and usage. In addition to the complexities of fast charge time and efficient AC/DC rectification, EV charging stations also require safety and interactive features for the end user. ON Semiconductor offers a complete solution that is designed to quickly and seamlessly transfer electrical power to the electric vehicles.
High Current Gate Drivers
ON Semiconductor’s NCD570x Insulated-Gate Bipolar Transistor (IGBT) Gate Drivers are high-current, high-performance devices for high power applications, such as solar inverters, motor control, and Uninterruptable Power Supplies (UPSs). These Gate Drivers are highly-integrated, offering a cost-effective solution by eliminating many external components and integrating protection features.
Current Sense Amplifiers
Current consumption monitoring provides critical information assisting in the safety and diagnostic functions of a system. ON Semiconductors offers current sense amplifiers that integrate external resistors to offer a higher accuracy, smaller solution, in addition to the cost effective standalone Op Amps.
650 V and 1200 V IGBTs
ON Semiconductor’s 650 V & 1200 V Insulated Gate Bipolar Transistors (IGBTs) feature robust and cost effective Ultra Field Stop Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.
650V SuperFET III MOSFETs
On Semiconductor's 650 V SuperFET III series offers high performance super junction MOSFETs specifically designed for high power density. Featuring best-in-class FOM and Eoss, the SuperFET III technology reduces RDS(ON) by more than 40% in the same package size compared to previous industry-leading technology. This allows product designers to utilize the reduced package size or the increased power in the same footprint. The SuperFET III features a robust body diode and well-balanced switching behavior.
100 V and 150 V PowerTrench MOSFETs
These MOSFETs are produced using ON Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.
Power Integrated Modules (PIMs)
Power Integrated Modules leverage ON Semiconductor’s extensive experience in automotive ignition IGBTs and intelligent power module (IPM) development, as well as packaging expertise to provide power solutions fully qualified to the highest industry standards. In addition, ON Semiconductor module solutions provide customers with a fully-integrated supply chain for silicon and packaging, ensuring high quality and cost efficiencies.
The NXH80B120L2Q0SG is a power module containing a dual boost stage consisting of two 40A/1200V IGBTs, two 15A/1200V SiC diodes, and two 25A/1600V anti-parallel diodes for the IGBTs. Two additional 25A/1600V bypass rectifiers used for inrush current limit are included. An on-board thermistor is included.
ON Semiconductor | Associated KEMET Components | |||||
ON Semiconductor Part Number | Ceramics | Tantalum Polymers | Aluminums | Films | Chokes | Inductors |
---|---|---|---|---|---|---|
NXH80T120L2Q0S2G | X7R | T530 (High Cap/Low ESR) | A700 (Polymer) | C4AQ (DC Link) | SS (High Frequency Common Mode) | MPLC (MCI, Mid Current) |
NXQH80B120H20SG | X7R | T530 (High Cap/Low ESR) | A700 (Polymer) | C4AQ (DC Link) | SS (High Frequency Common Mode) | MPLC (MCI, Mid Current) |
NXH160T120L2Q2F2SG | >X7R (Comm. And AEC-Q200) | T530 (High Cap/Low ESR) | EDH (Electrolytic General, Snap In) | C4AQ (DC Link) | SS (High Frequency Common Mode) | MPLC (MCI, Mid Current) |
Silicon Carbide Diodes
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
High-Voltage Rectifiers
ON Semiconductor’s portfolio of High-Voltage Rectifiers includes best-in-class solutions for a wide variety of applications offering customers flexibility for their design requirements.
ON Semiconductor | Associated KEMET Components | |||||
ON Semiconductor Part Number | Ceramics | Tantalum Polymers | Aluminums | Films | Chokes | Inductors |
---|---|---|---|---|---|---|
FFPF30UA60S | X7R | T530 (High Cap/Low ESR) | EDH (Electrolytic General, Snap In) | C4AQ (DC Link) | SS (High Frequency Common Mode) | MPLC (MCI, Mid Current) |
RHRG5060 | X7R | T530 (High Cap/Low ESR) | EDH (Electrolytic General, Snap In) | C4AQ (DC Link) | SS (High Frequency Common Mode) | MPLC (MCI, Mid Current) |
FFH30S60STU | X7R | T530 (High Cap/Low ESR) | EDH (Electrolytic General, Snap In) | C4AQ (DC Link) | SS (High Frequency Common Mode) | MPLC (MCI, Mid Current) |
Optocouplers
ON Semiconductor | Associated KEMET Components | |||||
ON Semiconductor Part Number | Ceramics | Tantalum Polymers | Aluminums | Films | Chokes | Inductors |
---|---|---|---|---|---|---|
HCPL2611M | X7R | T530 (High Cap/Low ESR) | EDH (Electrolytic General, Snap In) | C4AQ (DC Link) | SS (High Frequency Common Mode) | MPLC (MCI, Mid Current) |
HCPL0600 | X7R | T530 (High Cap/Low ESR) | EDH (Electrolytic General, Snap In) | C4AQ (DC Link) | SS (High Frequency Common Mode) | MPLC (MCI, Mid Current) |
FOD8160 | X7R | T530 (High Cap/Low ESR) | EDH (Electrolytic General, Snap In) | C4AQ (DC Link) | SS (High Frequency Common Mode) | MPLC (MCI, Mid Current) |