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Orders are typically delivered to Canada within 24 hours depending on location.
Free delivery to Canada on orders of $100 CAD or more. A delivery charge of $8 CAD will be billed on all orders less than $100 CAD.
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Credit account for qualified institutions and businesses
Payment in Advance by Wire Transfer
More Products From Fully Authorized Partners
Average Time to Ship 1-3 Days, extra ship charges may apply. Please see product page, cart, and checkout for actual ship speed.
Incoterms: CPT (Duty, customs, and applicable VAT/Tax due at time of delivery)
For more information visit Help & Support
Over 400 RF power amplifier designs, addressing a wide range of expanding markets from smart industrial applications to the 5G revolution
NXP’s RF Circuit Collection is a comprehensive library of RF power amplifier designs, addressing a wide range of fast-growing markets from smart industrial applications to the 5G revolution. This collection can reduce development time with easy online access to proven designs for fast time to market.
The AFIC901N is a 2-stage, high gain amplifier designed to provide a high level of flexibility to the amplifier designer. The device is unmatched even at the interstage, allowing performance to be optimized for any frequency in the 1.8 to 1000 MHz range. The high gain, ruggedness and wideband performance of this device make it ideal for use as a pre-driver and driver in a wide range of industrial, medical and communications applications.
Part Number | Description | Frequency Min. (MHz) | Frequency Max. (MHz) | Output Power (W) | Gain (dB) | VDD (V) | |
---|---|---|---|---|---|---|---|
AFIC901N-135MHZ | AFIC901N 1 W CW, 136-174 MHz Reference Circuit | 136 | 174 | 1 | 31 | 7.5 | View Details |
AFIC901N-350MHZ | AFIC901N 1 W CW, 350-520 MHz Reference Circuit | 350 | 520 | 1 | 27 | 7.5 | View Details |
AFIC901N-760MHZ | AFIC901N 1 W CW, 760-870 MHz Reference Circuit | 760 | 870 | 1 | 25 | 7.5 | View Details |
The AFSC5G23D37 is a fully integrated Doherty power amplifier module designed for wireless infrastructure applications that demand high performance in the smallest footprint. Ideal for applications in massive MIMO systems, outdoor small cells, and low power remote radio heads. The field-proven LDMOS power amplifiers are designed for TDD and FDD LTE systems.
Part Number | Description | Frequency Min. (MHz) | Frequency Max. (MHz) | Output Power (W) | Gain (dB) | VDD (V) | |
---|---|---|---|---|---|---|---|
AFSC5G23D37-EVB | AFSC5G23D37 5 W Avg., 2300-2400 MHz Reference Circuit | 2300 | 2400 | 29 | 27 | 26 | View Details |
The AFSC5G26D37 is a fully integrated Doherty power amplifier module designed for wireless infrastructure applications that demand high performance in the smallest footprint. Ideal for applications in massive MIMO systems, outdoor small cells, and low power remote radio heads. The field-proven LDMOS power amplifiers are designed for TDD and FDD LTE systems.
Part Number | Description | Frequency Min. (MHz) | Frequency Max. (MHz) | Output Power (W) | Gain (dB) | VDD (V) | |
---|---|---|---|---|---|---|---|
AFSC5G26D37-EVB | AFSC5G26D37 5 W Avg., 2496-2690 MHz Reference Circuit | 2575 | 2635 | 37 | 27 | 26 | View Details |
The AFSC5G35D35 is a fully integrated Doherty power amplifier module designed for wireless infrastructure applications that demand high performance in the smallest footprint. Ideal for applications in massive MIMO systems, outdoor small cells, and low power remote radio heads. The field-proven LDMOS power amplifiers are designed for TDD and FDD LTE systems.
Part Number | Description | Frequency Min. (MHz) | Frequency Max. (MHz) | Output Power (W) | Gain (dB) | VDD (V) | |
---|---|---|---|---|---|---|---|
AFSC5G35D35-EVB | AFSC5G35D35 5 W Avg., 3400-3600 MHz Reference Circuit | 3400 | 3600 | 21 | 24 | 24 | View Details |
The AFSC5G35D37 is a fully integrated Doherty power amplifier module designed for wireless infrastructure applications that demand high performance in the smallest footprint. Ideal for applications in massive MIMO systems, outdoor small cells, and low power remote radio heads. The field-proven LDMOS power amplifiers are designed for TDD and FDD LTE systems.
Part Number | Description | Frequency Min. (MHz) | Frequency Max. (MHz) | Output Power (W) | Gain (dB) | VDD (V) | |
---|---|---|---|---|---|---|---|
AFSC5G35D37-EVB | AFSC5G35D37 5 W Avg., 3400-3600 MHz Reference Circuit | 3400 | 3600 | 36 | 29 | 30 | View Details |
The AFSC5G37D37 is a fully integrated Doherty power amplifier module designed for wireless infrastructure applications that demand high performance in the smallest footprint. Ideal for applications in massive MIMO systems, outdoor small cells, and low power remote radio heads. The field-proven LDMOS power amplifiers are designed for TDD and FDD LTE systems.
Part Number | Description | Frequency Min. (MHz) | Frequency Max. (MHz) | Output Power (W) | Gain (dB) | VDD (V) | |
---|---|---|---|---|---|---|---|
AFSC5G37D37-EVB | AFSC5G37D37 5 W Avg., 3600-3800 MHz Reference Circuit | 3600 | 3800 | 30 | 30 | 30 | View Details |
These RF power transistors, AFV10700H, AFV10700HS and AFV10700GS, are designed for pulse applications operating at 960 to 1215 MHz. These devices are suitable for use in defense and commercial pulse applications with large duty cycles and long pulses, such as IFF, secondary surveillance radars, ADS-B transponders, DME and other complex pulse chains.
Part Number | Description | Frequency Min. (MHz) | Frequency Max. (MHz) | Output Power (W) | Gain (dB) | VDD (V) | |
---|---|---|---|---|---|---|---|
AFV10700H-1090 | AFV10700H 700 W Pulse, 1030-1090 MHz Reference Circuit | 1030 | 1090 | 700 | 19 | 50 | View Details |
These RF power transistors, AFV121KH, AFV121KHS and AFV121KGS, are designed for pulse applications operating at frequencies from 960 to 1215 MHz, such as distance measuring equipment (DME), secondary radars and high power transponders for air traffic control. These devices are suitable for use in pulse applications with large duty cycles and long pulses, including Mode S ELM.
Part Number | Description | Frequency Min. (MHz) | Frequency Max. (MHz) | Output Power (W) | Gain (dB) | VDD (V) | |
---|---|---|---|---|---|---|---|
AFV121KH-960MHZ | AFV121KH 1230 W Pulse, 960-1215 MHZ Reference Circuit | 960 | 1215 | 1230 | 17 | 50 | View Details |
The MHT2012N 12.5 W CW RF power integrated circuit is designed for RF energy applications operating in the 2450 MHz ISM band.
Part Number | Description | Frequency Min. (MHz) | Frequency Max. (MHz) | Output Power (W) | Gain (dB) | VDD (V) | |
---|---|---|---|---|---|---|---|
MHT2012N-2450 | MHT2012N 12 W CW, 2400-2500 MHz Reference Circuit | 2400 | 2500 | 12 | 30 | 32 | View Details |
The MMRF5014H 125 W CW RF power transistor is optimized for wideband operation up to 2700 MHz and includes input matching for extended bandwidth performance. With its high gain and high ruggedness, this device is ideally suited for CW, pulse and wideband RF applications.
Part Number | Description | Frequency Min. (MHz) | Frequency Max. (MHz) | Output Power (W) | Gain (dB) | VDD (V) | |
---|---|---|---|---|---|---|---|
MMRF5014H-200MHZ | MMRF5014H 100 W CW, 200-2500 MHz Reference Circuit | 200 | 2500 | 100 | 12 | 50 | View Details |
MMRF5014H-500MHZ | MMRF5014H 100 W CW, 500-2500 MHz Reference Circuit | 500 | 2500 | 100 | 12 | 50 | View Details |
These devices, MRF101AN and MRF101BN, are designed for use in HF and VHF communications, industrial, scientific and medical (ISM) and broadcast and aerospace applications. The devices are extremely rugged and exhibit high performance up to 250 MHz.
Part Number | Description | Frequency Min. (MHz) | Frequency Max. (MHz) | Output Power (W) | Gain (dB) | VDD (V) | |
---|---|---|---|---|---|---|---|
MRF101AN-13MHZ | MRF101AN 130 W CW, 13.56 MHz Reference Circuit | 13.56 | 13.56 | 130 | 27 | 50 | View Details |
MRF101AN-230MHZ | MRF101AN 115 W Pulse, 230 MHz Reference Circuit | 230 | 230 | 115 | 21 | 50 | View Details |
MRF101AN-27MHZ | MRF101AN 125 W CW, 27 MHz Reference Circuit | 27 | 27 | 125 | 25 | 50 | View Details |
MRF101AN-2MHZ4UP | MRF101AN 400 W CW, 1.8-250 MHz Reference Circuit | 1.8 | 250 | 400 | 14 | 50 | View Details |
MRF101AN-40MHZ | MRF101AN 120 W CW, 40.68 MHz Reference Circuit | 40.68 | 40.68 | 120 | 24 | 50 | View Details |
MRF101AN-50MHZ | MRF101AN 120 W CW, 50 MHz Reference Circuit | 50 | 50 | 119 | 23 | 50 | View Details |
MRF101AN-81MHZ | MRF101AN 130 W CW, 81.36 MHz Reference Circuit | 81.36 | 81.36 | 130 | 23 | 50 | View Details |
MRF101AN-88MHZ | MRF101AN 115 W CW, 87.5-108 MHz Reference Circuit | 87.5 | 108 | 115 | 20 | 50 | View Details |
MRF101AN-VHF | MRF101AN 100 W CW, 136-174 MHz Reference Circuit | 136 | 174 | 100 | 21 | 50 | View Details |
These 750 W CW transistors, MRF13750H and MRF13750HS, are designed for industrial, scientific and medical (ISM) applications in the 700 to 1300 MHz frequency range. The transistors are capable of CW or pulse power in narrowband operation.
Part Number | Description | Frequency Min. (MHz) | Frequency Max. (MHz) | Output Power (W) | Gain (dB) | VDD (V) | |
---|---|---|---|---|---|---|---|
MRF13750H-1300 | MRF13750H 700 W CW, 1300 MHz Reference Circuit | 1300 | 1300 | 700 | 17 | 50 | View Details |
MRF13750H-915MHZ | MRF13750H 750 W CW, 915 MHz Reference Circuit | 902 | 928 | 750 | 19 | 50 | View Details |
This high ruggedness device, MRF1K50H & MRF1K50N, is designed for use in high VSWR industrial, scientific and medical applications, as well as radio and VHF TV broadcast, sub-GHz aerospace and mobile radio applications. Its unmatched input and output design allows for wide frequency range use from 1.8 to 500 MHz.
Part Number | Description | Frequency Min. (MHz) | Frequency Max. (MHz) | Output Power (W) | Gain (dB) | VDD (V) | |
---|---|---|---|---|---|---|---|
MRF1K50H-TF1 | MRF1K50H 1475 W CW, 87.5-108 MHz Reference Circuit | 87.5 | 108 | 1475 | 23 | 50 | View Details |
MRF1K50H-TF2 | MRF1K50H 1550 W CW, 27 MHz Reference Circuit | 27 | 27 | 1550 | 26 | 50 | View Details |
MRF1K50H-TF3 | MRF1K50H 1400 W CW, 81.36 MHz Reference Circuit | 81.36 | 81.36 | 1400 | 23 | 50 | View Details |
MRF1K50H-TF4 | MRF1K50H 1500 W Pulse, 230 MHz Reference Circuit | 230 | 230 | 1500 | 24 | 50 | View Details |
MRF1K50H-TF5 | MRF1K50H 1500 W CW, 13.56 MHz Reference Circuit | 13.56 | 13.56 | 1500 | 22 | 50 | View Details |
MRF1K50N-TF1 | MRF1K50N 1420 W CW, 87.5-108 MHz Reference Circuit | 87.5 | 108 | 1420 | 22 | 50 | View Details |
MRF1K50N-TF4 | MRF1K50N 1500 W Pulse, 230 MHz Reference Circuit | 230 | 230 | 1500 | 23 | 50 | View Details |
These 300 W CW GaN transistors, MRF24G300HS and MRF24G300H, are designed for industrial, scientific and medical (ISM) applications at 2450 MHz. These devices are suitable for use in CW, pulse, cycling and linear applications. These high gain, high efficiency devices are easy to use and will provide long life in even the most demanding environments.
These parts are characterized and performance is guaranteed for applications operating in the 2400 to 2500 MHz band. There is no guarantee of performance when these parts are used in applications designed outside of these frequencies.
Part Number | Description | Frequency Min. (MHz) | Frequency Max. (MHz) | Output Power (W) | Gain (dB) | VDD (V) | |
---|---|---|---|---|---|---|---|
MRF24G300HS-2450 | MRF24G300HS 330 W CW, 2400-2500 MHz Reference Circuit | 2400 | 2500 | 330 | 15 | 48 | View Details |
These devices, MRF300AN and MRF300BN, are designed for use in HF and VHF communications, industrial, scientific and medical (ISM) and broadcast and aerospace applications. The devices are extremely rugged and exhibit high performance up to 250 MHz.
Part Number | Description | Frequency Min. (MHz) | Frequency Max. (MHz) | Output Power (W) | Gain (dB) | VDD (V) | |
---|---|---|---|---|---|---|---|
MRF300A-27MHZ | MRF300AN 330 W CW, 27 MHz Reference Circuit | 27 | 27 | 330 | 27 | 50 | View Details |
MRF300A-40MHZ | MRF300AN 330 W CW, 40.68 MHz Reference Circuit | 40.68 | 40.68 | 330 | 28 | 50 | View Details |
MRF300AN-13MHZ | MRF300AN 320 W CW, 13.56 MHz Reference Circuit | 13.56 | 13.56 | 320 | 28 | 50 | View Details |
MRF300AN-144MHZ | MRF300AN 320 W CW, 144 MHz Reference Circuit | 144 | 148 | 320 | 23 | 50 | View Details |
MRF300AN-230MHZ | MRF300AN 330 W Pulse, 230 MHz Reference Circuit | 230 | 230 | 330 | 20 | 50 | View Details |
MRF300AN-50MHZ | MRF300AN 320 W CW, 50 MHz Reference Circuit | 50 | 50 | 320 | 27 | 50 | View Details |
MRF300AN-81MHZ | MRF300AN 325 W CW, 81.36 MHz Reference Circuit | 81.36 | 81.36 | 325 | 25 | 50 | View Details |
These high ruggedness devices, MRFE6VP5600HR6 and MRFE6VP5600HSR6, are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz.
Part Number | Description | Frequency Min. (MHz) | Frequency Max. (MHz) | Output Power (W) | Gain (dB) | VDD (V) | |
---|---|---|---|---|---|---|---|
MRFE6VP5600-434 | MRFE6VP5600H 600 W CW, 434 MHz Reference Circuit | 434 | 434 | 600 | 19 | 48 | View Details |
These high ruggedness devices, MRFE6VP61K25H, MRFE6VP61K25HS and MRFE6VP61K25GS, are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz.
Part Number | Description | Frequency Min. (MHz) | Frequency Max. (MHz) | Output Power (W) | Gain (dB) | VDD (V) | |
---|---|---|---|---|---|---|---|
MRFE6VP61K25-VHF | MRFE6VP61K25H 225 W DVB-T, 174-230 MHz VHF Reference Circuit | 174 | 230 | 1250 | 23 | 50 | View Details |
The MRFE6VP6300HR3 and MRFE6VP6300HSR3 are high ruggedness devices, designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz.
Part Number | Description | Frequency Min. (MHz) | Frequency Max. (MHz) | Output Power (W) | Gain (dB) | VDD (V) | |
---|---|---|---|---|---|---|---|
MRFE6VP6300-230 | MRFE6VP6300H 300 W Pulse, 230 MHz Reference Circuit | 230 | 230 | 300 | 26 | 50 | View Details |
MRFE6VP6300-88 | MRFE6VP6300H 350 W CW, 87.5-108 MHz Reference Circuit | 87.5 | 108 | 350 | 23 | 50 | View Details |
MRFE6VS25NR1 and MRFE6VS25GNR1 are RF power transistors designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to 2000 MHz. These devices are fabricated using Our enhanced ruggedness platform and are suitable for use in applications where high VSWRs are encountered.
Part Number | Description | Frequency Min. (MHz) | Frequency Max. (MHz) | Output Power (W) | Gain (dB) | VDD (V) | |
---|---|---|---|---|---|---|---|
MRFE6VS25GN-960 | MRFE6VS25GN 30 W CW, 960-1215 MHz Reference Circuit | 960 | 1215 | 30 | 16 | 50 | View Details |
The MRFX035H high ruggedness device is designed for use in high VSWR industrial, medical, broadcast, aerospace and mobile radio applications. Its unmatched input and output design supports frequency use from 1.8 to 512 MHz.
Part Number | Description | Frequency Min. (MHz) | Frequency Max. (MHz) | Output Power (W) | Gain (dB) | VDD (V) | |
---|---|---|---|---|---|---|---|
MRFX035H-2MHZ | MRFX035H 35 W CW, 1.8-54 MHz Reference Circuit | 1.8 | 54 | 35 | 24 | 65 | View Details |
MRFX035H-30MHZ | MRFX035H 35 W CW, 30-400 MHz Reference Circuit | 30 | 400 | 35 | 16 | 65 | View Details |
The MRFX1K80H is the first device based on NXP's new 65 V LDMOS technology that focuses on ease of use. The MRFX1K80N is the over-molded plastic version of MRFX1K80H and enables a 30% lower thermal resistance. This high ruggedness transistor is designed for use in high VSWR industrial, scientific and medical applications, as well as radio and VHF TV broadcast, sub-GHz aerospace and mobile radio applications. Its unmatched input and output design allows for wide frequency range use from 1.8 to 400 MHz.
Part Number | Description | Frequency Min. (MHz) | Frequency Max. (MHz) | Output Power (W) | Gain (dB) | VDD (V) | |
---|---|---|---|---|---|---|---|
MRFX1K80H-128MHZ | MRFX1K80H 3775 W Pulse, 128 MHz Reference Circuit | 128 | 128 | 3775 | 25 | 65 | View Details |
MRFX1K80H-175MHZ | MRFX1K80H 1560 W CW, 175 MHz Reference Circuit | 175 | 175 | 1560 | 23 | 60 | View Details |
MRFX1K80H-230MHZ | MRFX1K80H 1800 W Pulse, 230 MHz Reference Circuit | 230 | 230 | 1800 | 25 | 65 | View Details |
MRFX1K80H-27MHZ | MRFX1K80H 1800 W CW, 27 MHz Reference Circuit | 27 | 27 | 1800 | 28 | 65 | View Details |
MRFX1K80H-64MHZ | MRFX1K80H 1800 W Pulse, 64 MHz Reference Circuit | 64 | 64 | 1800 | 27 | 65 | View Details |
MRFX1K80H-81MHZ | MRFX1K80H 1800 W CW, 81.36 MHz Reference Circuit | 81.36 | 81.36 | 1800 | 25 | 62 | View Details |
MRFX1K80H-88MHZ | MRFX1K80H 1800 W CW, 87.5-108 MHz Reference Circuit | 87.5 | 108 | 1600 | 23 | 60 | View Details |
MRFX1K80H-VHFDHY | MRFX1K80H 250 W DVB-T, 174-230 MHz Doherty Reference Circuit | 174 | 230 | 1200 | 21 | 63 | View Details |
MRFX1K80N-230MHZ | MRFX1K80N 1800 W Pulse, 230 MHz Reference Circuit | 230 | 230 | 1800 | 24 | 65 | View Details |
MRFX1K80N-88MHZ | MRFX1K80N 1670 W CW, 87.5-108 MHz Reference Circuit | 87.5 | 108 | 1670 | 23 | 60 | View Details |
The MRFX600H, MRFX600HS and MRFX600GS high ruggedness devices are designed for use in high VSWR industrial, medical, broadcast, aerospace and mobile radio applications. Their unmatched input and output design supports frequency use from 1.8 to 400 MHz.
Part Number | Description | Frequency Min. (MHz) | Frequency Max. (MHz) | Output Power (W) | Gain (dB) | VDD (V) | |
---|---|---|---|---|---|---|---|
MRFX600H-230MHZ | MRFX600H 600 W Pulse, 230 MHz Reference Circuit | 230 | 230 | 600 | 26 | 65 | View Details |
MRFX600H-88MHZ | MRFX600H 680 W CW, 87.5-108 MHz Reference Circuit | 87.5 | 108 | 680 | 21 | 62 | View Details |
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Orders are typically delivered to Canada within 24 hours depending on location.
Free delivery to Canada on orders of $100 CAD or more. A delivery charge of $8 CAD will be billed on all orders less than $100 CAD.
DDP (Duty and customs paid by Digi-Key)
Credit account for qualified institutions and businesses
Payment in Advance by Wire Transfer
More Products From Fully Authorized Partners
Average Time to Ship 1-3 Days, extra ship charges may apply. Please see product page, cart, and checkout for actual ship speed.
Incoterms: CPT (Duty, customs, and applicable VAT/Tax due at time of delivery)
For more information visit Help & Support
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