AO34xx Series N-Channel and P-Channel MOSFETs

Alpha and Omega Semiconductor’s AO34xx series trench technology enhancement mode field effect transistors

Image of Alpha and Omega's AO34xx Series N-channel and P-channel MOSFETsAlpha and Omega Semiconductor’s AO34xx series of MOSFETs uses advanced trench technology to provide excellent RDS(ON), as low as 22 mΩ also a very low gate charge, down to 3.2 nC @ 4.5 V. The AO34xx series operation over a wide gate drive range from 1.5 V to 12 V also providing a continuous drain current as high as 6.5 A @ +25°C. These MOSFETs have a very wide junction and storage temperature range of -55°C to +150°C and have a max power dissipation of up to 1.5 W, making them perfect for load switching and PWM applications. The AO34xx series is offered in a low-profile SOT-23 package type.

Features
  • Wide gate drive range of 1.5 V to 12 V
  • Continuous drain current as high as 6.5 A @ +25°C
  • Junction and storage temperature range of -55°C to +150°C
  • Max power dissipation up to 1.5 W
  • Available in SOT-23 package
Applications
  • Load switching
  • PWM applications

AO34xx Series N-Channel and P-Channel MOSFETs

ImageManufacturer Part NumberDescriptionAvailable QuantityView Details
MOSFET N-CH 30V 5.7A SOT23AO3400AMOSFET N-CH 30V 5.7A SOT23569071 - ImmediateView Details
MOSFET P-CH 30V 4A SOT23AO3401AMOSFET P-CH 30V 4A SOT23330520 - ImmediateView Details
MOSFET N-CH 30V 4.0A SOT23AO3402MOSFET N-CH 30V 4.0A SOT2315250 - ImmediateView Details
MOSFET P-CH 30V 2.6A SOT23AO3403MOSFET P-CH 30V 2.6A SOT2317580 - ImmediateView Details
MOSFET N-CH 30V 5.8A SOT23AO3404AMOSFET N-CH 30V 5.8A SOT23458 - ImmediateView Details
Published: 2018-10-25