PRLL5817-5819 Datasheet by NXP USA Inc.

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DATA SHEET
Product data sheet
Supersedes data of 1996 May 03
1999 Apr 22
DISCRETE SEMICONDUCTORS
PRLL5817; PRLL5818; PRLL5819
Schottky barrier diodes
alfpage
M3D121
1999 Apr 22 2
NXP Semiconductors Product data sheet
Schottky barrier diodes PRLL5817; PRLL5818;
PRLL5819
FEATURES
Low switching losses
Fast recovery time
Guard ring protected
Hermetically sealed glass SMD
package.
APPLICATIONS
Low power, switched-mode power
supplies
Rectifying
Polarity protection.
DESCRIPTION
The PRLL5817 to PRLL5819 types
are Schottky barrier diodes fabricated
in planar technology, and
encapsulated in SOD87 hermetically
sealed glass SMD packages
incorporating ImplotecTM(1)
technology.
(1) Implotec is a trademark of Philips.
MARKING
TYPE NUMBER MARKING CODE
PRLL5817 9
PRLL5818 9
PRLL5819 9
Fig.1 Simplified outline (SOD87) and symbol.
handbook, halfpage
MAM190
ka
1999 Apr 22 3
NXP Semiconductors Product data sheet
Schottky barrier diodes PRLL5817; PRLL5818;
PRLL5819
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VRcontinuous reverse voltage
PRLL5817 20 V
PRLL5818 30 V
PRLL5819 40 V
VRSM non-repetitive peak reverse voltage
PRLL5817 24 V
PRLL5818 36 V
PRLL5819 48 V
VRRM repetitive peak reverse voltage
PRLL5817 20 V
PRLL5818 30 V
PRLL5819 40 V
VRWM crest working reverse voltage
PRLL5817 20 V
PRLL5818 30 V
PRLL5819 40 V
IF(AV) average forward current Tamb = 60 °C1 A
IFSM non-repetitive peak forward current t = 10 ms half sine wave;
Tj = Tj max prior to surge: VR = 0 25 A
Tstg storage temperature 65 +175 °C
Tjjunction temperature 125 °C
1999 Apr 22 4
NXP Semiconductors Product data sheet
Schottky barrier diodes PRLL5817; PRLL5818;
PRLL5819
ELECTRICAL CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
Note
1. Pulse test: tp = 300 μs; δ = 0.02.
THERMAL CHARACTERISTICS
Note
1. Refer to SOD87 standard mounting conditions.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VFforward voltage see Fig.2
PRLL5817 IF = 0.1 A −−320 mV
IF = 1 A −−450 mV
IF = 3 A −−750 mV
VFforward voltage see Fig.2
PRLL5818 IF = 0.1 A −−330 mV
IF = 1 A −−550 mV
IF = 3 A −−875 mV
VFforward voltage see Fig.2
PRLL5819 IF = 0.1 A −−340 mV
IF = 1 A −−600 mV
IF = 3 A −−900 mV
IRreverse current VR = VRRMmax; note 1 0.5 1mA
VR = VRRMmax; Tj = 100 °C 510 mA
Cddiode capacitance VR = 4 V; f = 1 MHz
PRLL5817 70 pF
PRLL5818 50 pF
PRLL5819 50 pF
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to ambient note 1 150 K/W
u5 ng.3 PRLL817. Maxwmum values steady state Iorward power current; a = |F(RMS)/|F(AV) 1999 Apr 22 5
1999 Apr 22 5
NXP Semiconductors Product data sheet
Schottky barrier diodes PRLL5817; PRLL5818;
PRLL5819
GRAPHICAL DATA
handbook, halfpage
01
5
0
1
MBE634
2
3
4
0.5 VF (V)
IF
(A) Tj = 125 oC25 oC
Fig.2 Typical forward voltage.
Fig.3 PRLL817. Maximum values steady state forward power dissipation as a function of the average forward
current; a = IF(RMS)/IF(AV).
2
1
00 0.5 1.5
MBE642
1
(W)
0.5
P
F(AV)
IF(AV) (A)
a = 3 2.5 1.57 1.42 1
2
us 01% u 05 ngA PRLLSSWS. Maximum values steady state iorward powe current; a = |F(RMS)/|F(AV) 25 us ng.5 PRLL5819. Maximum values steady state iorward power dissip current; a = |F(RMS)/|F(AV) 1999 Apr 22
1999 Apr 22 6
NXP Semiconductors Product data sheet
Schottky barrier diodes PRLL5817; PRLL5818;
PRLL5819
Fig.4 PRLL5818. Maximum values steady state forward power dissipation as a function of the average forward
current; a = IF(RMS)/IF(AV).
2
1
00 0.5 1.5
MBE641
1
(W)
0.5
P
F(AV)
IF(AV) (A)
a = 3 2.5 1.57 1.42 12
Fig.5 PRLL5819. Maximum values steady state forward power dissipation as a function of the average forward
current; a = IF(RMS)/IF(AV).
2
1
00 0.5 1.5
MBE643
1
(W)
0.5
P
F(AV)
IF(AV) (A)
a = 3 2.5 1.57 1.42 12
. Maximum permissrble junction e as a Iunctron oi reverse voltage; nted; refer to SOD87 standard ondrtions. ‘00 Frg.8 PRLLSSWS. Maximum perm temperature as a Iunctron 0 device mounted; refer to SD mounting condrtions. 1999 Apr 22 7
1999 Apr 22 7
NXP Semiconductors Product data sheet
Schottky barrier diodes PRLL5817; PRLL5818;
PRLL5819
Fig.6 PRLL5817. Maximum permissible junction
temperature as a function of reverse voltage;
device mounted; refer to SOD87 standard
mounting conditions.
02
0
200
0
MBE635
100
10 VR (V)
Tj
(
oC) VRWM
VR
δ = 0.2
δ = 0.5
Fig.7 PRLL5817. Reverse power dissipation as a
function of reverse voltage (max. values);
device mounted; refer to SOD87 standard
mounting conditions.
02
0.1
0
MBE640
0.05
PR
10 VR (V)
W)
VRWM
VRδ = 0.5 δ = 0.2
Fig.8 PRLL5818. Maximum permissible junction
temperature as a function of reverse voltage;
device mounted; refer to SOD87 standard
mounting conditions.
04
0
200
0
MBE636
100
20 VR (V)
Tj
(
oC) VRWM
VR
δ = 0.2
δ = 0.5
Fig.9 PRLL5818. Reverse power dissipation as a
function of reverse voltage (max. values);
device mounted; refer to SOD87 standard
mounting conditions.
04
0.1
0
MBE638
0.05
PR
20 VR (V)
W)
VRWM
VRδ = 0.5 δ = 0.2
too th.10 PRLL5819. Maximum permisstble temperature as a tunctton oi revers device mounted; refer to SOD87 s mounting condttions. 1999 Apr 22
1999 Apr 22 8
NXP Semiconductors Product data sheet
Schottky barrier diodes PRLL5817; PRLL5818;
PRLL5819
Fig.10 PRLL5819. Maximum permissible junction
temperature as a function of reverse voltage;
device mounted; refer to SOD87 standard
mounting conditions.
02
0
200
0
MBE637
100
10 VR (V)
Tj
(
oC) VRWM
VR
δ = 0.2
δ = 0.5
Fig.11 PRLL5819. Reverse power dissipation as a
function of reverse voltage (max. values);
device mounted; refer to SOD87 standard
mounting conditions.
04
0.1
0
MBE639
0.05
PR
20 VR (V)
W)
VRWM
VRδ = 0.5 δ = 0.2
NXP Semiconductors Product data sheet . . PRLL5817; PRLL5818; Schottky barrier dlodes PRLL5819 PACKAGE OUTLINE Hermelically sealed glass surlace mounted package; lmplotecTMm lechnology; 2 conneclors 50037 ’ r r_r_r_r_r_r_r_r_r_r_r REFERENCES OUTLINE EUROPEAN IssuE DATE VERSION .Ec JEDEC El“ PROJECTION SDD87 10DH03 S @ 999970936734 1999 Apr 22 9
1999 Apr 22 9
NXP Semiconductors Product data sheet
Schottky barrier diodes PRLL5817; PRLL5818;
PRLL5819
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
SOD87 100H03 99-03-31
99-06-04
Hermetically sealed glass surface mounted package;
ImplotecTM(1) technology; 2 connectors SOD8
7
UNIT D
mm 2.1
2.0 2.0
1.8 3.7
3.3 0.3
D1 HL
DIMENSIONS (mm are the original dimensions) H
DD1
LL
(2)
0 1 2 mm
scale
Notes
1. Implotec is a trademark of Philips.
2. The marking indicates the cathode.
ka
1999 Apr 22 10
NXP Semiconductors Product data sheet
Schottky barrier diodes PRLL5817; PRLL5818;
PRLL5819
DATA SHEET STATUS
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for product
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the product specification.
DISCLAIMERS
General Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
Right to make changes NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
Suitability for use NXP Semiconductors products are
not designed, authorized or warranted to be suitable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customer’s own risk.
Applications Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
Terms and conditions of sale NXP Semiconductors
products are sold subject to the general terms and
conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
otherwise agreed to in writing by NXP Semiconductors. In
case of any inconsistency or conflict between information
in this document and such terms and conditions, the latter
will prevail.
No offer to sell or license Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
Quick reference data The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
founded by PHILIPS
NXP Semiconductors
Contact information
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© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Printed in The Netherlands 115002/00/02/pp11 Date of release: 1999 Apr 22 Document order number: 9397 750 05474

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