PDTA114E Series Datasheet by Nexperia USA Inc.

View All Related Products | Download PDF Datasheet
nexpefla http://www.nxD.com http://www.DhiliDs.com/ httD://www.semiconductors.philips.com/ htt : www.nex eria.com salesaddressesQneer com
Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com (email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
- © Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia
1. Product profile
1.1 General description
PNP Resistor-Equipped Transistor (RET) family in small Surface-Mounted Device (SMD)
plastic packages.
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
PDTA114E series
PNP resistor-equipped transistors;
R1 = 10 k, R2 = 10 k
Rev. 10 — 21 December 2011 Product data sheet
Table 1. Product overview
Type number Package NPN
complement Package
configuration
NXP JEITA JEDEC
PDTA114EE SOT416 SC-75 - PDTC114EE ultra small
PDTA114EM SOT883 SC-101 - PDTC114EM leadless ultra small
PDTA114ET SOT23 - TO-236AB PDTC114ET small
PDTA114EU SOT323 SC-70 - PDTC114EU very small
100 mA output current capability Reduces component count
Built-in bias resistors Reduces pick and place costs
Simplifies circuit design AEC-Q101 qualified
Digital application in automotive and
industrial segments
Cost-saving alternative for BC847/857
series in digital applications
Control of IC inputs Switching loads
Table 2. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VCEO collector-emitter voltage open base - - 50 V
IOoutput current - - 100 mA
R1 bias resistor 1 (input) 7 10 13 k
R2/R1 bias resistor ratio 0.8 1.0 1.2
5i ii de,
PDTA114E_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 10 — 21 December 2011 2 of 17
NXP Semiconductors PDTA114E series
PNP resistor-equipped transistors; R1 = 10 k, R2 = 10 k
2. Pinning information
3. Ordering information
4. Marking
[1] * = placeholder for manufacturing site code.
Table 3. Pinning
Pin Description Simplified outline Graphic symbol
SOT23; SOT323; SOT416
1 input (base)
2 GND (emitter)
3 output (collector)
SOT883
1 input (base)
2 GND (emitter)
3 output (collector)
006aaa144
12
3
sym003
3
2
1R1
R2
3
1
2
Transparent
top view
sym003
3
2
1R1
R2
Table 4. Ordering information
Type number Package
Name Description Version
PDTA114EE SC-75 plastic surface-mounted package; 3 leads SOT416
PDTA114EM SC-101 leadless ultra small plastic package; 3 solder lands;
body 1.0 0.6 0.5 mm SOT883
PDTA114ET - plastic surface-mounted package; 3 leads SOT23
PDTA114EU SC-70 plastic surface-mounted package; 3 leads SOT323
Table 5. Marking codes
Type number Marking code[1]
PDTA114EE 03
PDTA114EM E5
PDTA114ET *03
PDTA114EU *03
PDTA114E_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 10 — 21 December 2011 3 of 17
NXP Semiconductors PDTA114E series
PNP resistor-equipped transistors; R1 = 10 k, R2 = 10 k
5. Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Reflow soldering is the only recommended soldering method.
[3] Device mounted on an FR4 PCB with 70 m copper strip line, standard footprint.
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VCBO collector-base voltage open emitter - 50 V
VCEO collector-emitter voltage open base - 50 V
VEBO emitter-base voltage open collector - 10 V
VIinput voltage
positive - +40 V
negative - 10 V
IOoutput current - 100 mA
ICM peak collector current single pulse; tp1ms - 100 mA
Ptot total power dissipation Tamb 25 C
PDTA114EE (SOT416) [1][2] -150mW
PDTA114EM (SOT883) [2][3] -250mW
PDTA114ET (SOT23) [1] -250mW
PDTA114EU (SOT323) [1] -200mW
Tjjunction temperature - 150 C
Tamb ambient temperature 65 +150 C
Tstg storage temperature 65 +150 C
PDTA114E_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 10 — 21 December 2011 4 of 17
NXP Semiconductors PDTA114E series
PNP resistor-equipped transistors; R1 = 10 k, R2 = 10 k
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
[3] Device mounted on an FR4 PCB with 70 m copper strip line, standard footprint.
(1) SOT23; FR4 PCB, standard footprint
SOT883; FR4 PCB with 70 m copper strip line, standard footprint
(2) SOT323; FR4 PCB, standard footprint
(3) SOT416; FR4 PCB, standard footprint
Fig 1. Power derating curves
Tamb (°C)
-75 17512525 75-25
006aac778
100
200
300
Ptot
(mW)
0
(1)
(2)
(3)
Table 7. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-a) thermal resistance from junction
to ambient in free air
PDTA114EE (SOT416) [1][2] --830K/W
PDTA114EM (SOT883) [2][3] --500K/W
PDTA114ET (SOT23) [1] --500K/W
PDTA114EU (SOT323) [1] --625K/W
PDTA114E_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 10 — 21 December 2011 5 of 17
NXP Semiconductors PDTA114E series
PNP resistor-equipped transistors; R1 = 10 k, R2 = 10 k
FR4 PCB, standard footprint
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration for
PDTA114EE (SOT416); typical values
FR4 PCB, 70 m copper strip line
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration for
PDTA114EM (SOT883); typical values
PDTA114E_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 10 — 21 December 2011 6 of 17
NXP Semiconductors PDTA114E series
PNP resistor-equipped transistors; R1 = 10 k, R2 = 10 k
FR4 PCB, standard footprint
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration for
PDTA114ET (SOT23); typical values
FR4 PCB, standard footprint
Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration for
PDTA114EU (SOT323); typical values
PDTA114E_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 10 — 21 December 2011 7 of 17
NXP Semiconductors PDTA114E series
PNP resistor-equipped transistors; R1 = 10 k, R2 = 10 k
7. Characteristics
[1] Characteristics of built-in transistor.
Table 8. Characteristics
Tamb =25
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
ICBO collector-base
cut-off current VCB =50 V; IE=0A - - 100 nA
ICEO collector-emitter
cut-off current VCE =30 V; IB=0A - - 1A
VCE =30 V; IB=0A;
Tj= 150 C--5A
IEBO emitter-base
cut-off current VEB =5V; I
C=0A - - 400 A
hFE DC current gain VCE =5V; I
C=5mA 30 - -
VCEsat collector-emitter
saturation voltage IC=10 mA;
IB=0.5 mA --150 mV
VI(off) off-state input
voltage VCE =5V;
IC=100 A-1.1 0.8 V
VI(on) on-state input
voltage VCE =0.3 V;
IC=10 mA
2.5 1.8 - V
R1 bias resistor 1 (input) 7 10 13 k
R2/R1 bias resistor ratio 0.8 1.0 1.2
Cccollector capacitance VCB =10 V;
IE=i
e=0A; f=1MHz --3pF
fTtransition frequency VCE =5V;
IC=10 mA;
f = 100 MHz
[1] - 180 - MHz
PDTA114E_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 10 — 21 December 2011 8 of 17
NXP Semiconductors PDTA114E series
PNP resistor-equipped transistors; R1 = 10 k, R2 = 10 k
VCE =5V
(1) Tamb = 100 C
(2) Tamb =25C
(3) Tamb =40 C
IC/IB=20
(1) Tamb = 100 C
(2) Tamb =25C
(3) Tamb =40 C
Fig 6. DC current gain as a function of collector
current; typical values Fig 7. Collector-emitter saturation voltage as a
function of collector current; typical values
VCE =0.3 V
(1) Tamb =40 C
(2) Tamb =25C
(3) Tamb = 100 C
VCE =5V
(1) Tamb =40 C
(2) Tamb =25C
(3) Tamb = 100 C
Fig 8. On-state input voltage as a function of
collector current; typical values Fig 9. Off-state input voltage as a function of
collector current; typical values
IC (mA)
-10-1 -102
-10-1
006aac773
102
10
103
hFE
1
(1)
(2)
(3)
IC (mA)
-1 -102
-10
006aac774
-10-1
-1
VCEsat
(V)
-10-2
(1)
(2)
(3)
006aac775
IC (mA)
-10-1 -102
-10-1
-1
-10
VI(on)
(V)
-10-1
(1)
(2)
(3)
IC (mA)
-10-1 -10-1
006aac776
-1
-10
VI(off)
(V)
-10-1
(1)
(2)
(3)
PDTA114E_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 10 — 21 December 2011 9 of 17
NXP Semiconductors PDTA114E series
PNP resistor-equipped transistors; R1 = 10 k, R2 = 10 k
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
f=1MHz; T
amb =25CV
CE =5V; T
amb =25C
Fig 10. Collector capacitance as a function of
collector-base voltage; typical values Fig 11. Transition frequency as a function of collector
current; typical values of built-in transistor
VCB (V)
0 -50-40-20 -30-10
006aac777
2
4
6
Cc
(pF)
0
006aac763
IC (mA)
-10-1 -102
-10-1
102
103
fT
(MHz)
10
PDTA114E_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 10 — 21 December 2011 10 of 17
NXP Semiconductors PDTA114E series
PNP resistor-equipped transistors; R1 = 10 k, R2 = 10 k
9. Package outline
10. Packing information
[1] For further information and the availability of packing methods, see Section 14.
Fig 12. Package outline PDTA114EE (SOT416/SC-75) Fig 13. Package outline PDTA114EM (SOT883/SC-101)
Fig 14. Package outline PDTA114ET (SOT23) Fig 15. Package outline PDTA114EU (SOT323/SC-70)
04-11-04Dimensions in mm
0.95
0.60
1.8
1.4
1.75
1.45 0.9
0.7
0.25
0.10
1
0.30
0.15
12
30.45
0.15
03-04-03Dimensions in mm
0.62
0.55
0.55
0.47 0.50
0.46
0.65
0.20
0.12
3
21
0.30
0.22
0.30
0.22
1.02
0.95
0.35
04-11-04Dimensions in mm
0.45
0.15
1.9
1.1
0.9
3.0
2.8
2.5
2.1 1.4
1.2
0.48
0.38 0.15
0.09
12
3
04-11-04Dimensions in mm
0.45
0.15
1.1
0.8
2.2
1.8
2.2
2.0 1.35
1.15
1.3
0.4
0.3 0.25
0.10
12
3
Table 9. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number Package Description Packing quantity
3000 10000
PDTA114EE SOT416 4 mm pitch, 8 mm tape and reel -115 -135
PDTA114EM SOT883 2 mm pitch, 8 mm tape and reel - -315
PDTA114ET SOT23 4 mm pitch, 8 mm tape and reel -215 -235
PDTA114EU SOT323 4 mm pitch, 8 mm tape and reel -115 -135
PDTA114E_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 10 — 21 December 2011 11 of 17
NXP Semiconductors PDTA114E series
PNP resistor-equipped transistors; R1 = 10 k, R2 = 10 k
11. Soldering
Reflow soldering is the only recommended soldering method.
Fig 16. Reflow soldering footprint PDTA114EE (SOT416/SC-75)
Reflow soldering is the only recommended soldering method.
Fig 17. Reflow soldering footprint PDTA114EM (SOT883/SC-101)
solder lands
solder resist
occupied area
solder paste
sot416_fr
0.85
1.7
2.2
2
0.5
(3×)
0.6
(3×)
1
1.3
Dimensions in mm
solder lands
solder resist
occupied area
solder paste
sot883_fr
1.3
0.3
0.6 0.7
0.4
0.9
0.3
(2×)
0.4
(2×)
0.25
(2×)
R0.05 (12×)
0.7
Dimensions in mm
thl11 A 1+4 i W , + i m “TL , f i iw ,‘+J \ ‘‘‘‘‘ +4 j 14“, i \MWM .‘,L H W , MAL i
PDTA114E_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 10 — 21 December 2011 12 of 17
NXP Semiconductors PDTA114E series
PNP resistor-equipped transistors; R1 = 10 k, R2 = 10 k
Fig 18. Reflow soldering footprint PDTA114ET (SOT23)
Fig 19. Wave soldering footprint PDTA114ET (SOT23)
solder lands
solder resist
occupied area
solder paste
sot023_fr
0.5
(3×)
0.6
(3×)
0.6
(3×)
0.7
(3×)
3
1
3.3
2.9
1.7
1.9
2
Dimensions in mm
solder lands
solder resist
occupied area
preferred transport direction during soldering
sot023_fw
2.8
4.5
1.4
4.6
1.4
(2×)
1.2
(2×)
2.2
2.6
Dimensions in mm
PDTA114E_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 10 — 21 December 2011 13 of 17
NXP Semiconductors PDTA114E series
PNP resistor-equipped transistors; R1 = 10 k, R2 = 10 k
Fig 20. Reflow soldering footprint PDTA114EU (SOT323/SC-70)
Fig 21. Wave soldering footprint PDTA114EU (SOT323/SC-70)
solder lands
solder resist
occupied area
solder paste
sot323_fr
2.65
2.35 0.6
(3×)
0.5
(3×)
0.55
(3×)
1.325
1.85
1.3
3
2
1
Dimensions in mm
sot323_fw
3.65 2.1
1.425
(3×)
4.6
09
(2×)
2.575
1.8
solder lands
solder resist
occupied area
preferred transport
direction during soldering
Dimensions in mm
Figure 2
PDTA114E_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 10 — 21 December 2011 14 of 17
NXP Semiconductors PDTA114E series
PNP resistor-equipped transistors; R1 = 10 k, R2 = 10 k
12. Revision history
Table 10. Revision history
Document ID Release date Data sheet status Change notice Supersedes
PDTA114E_SER v.10 20111221 Product data sheet - PDTA114E_SER v.9
Modifications: Figure 2 and 5: corrected
PDTA114E_SER v.9 20111122 Product data sheet - PDTA114E_SERIES v.8
PDTA114E_SERIES v.8 20040802 Product specification - PDTA114E_SERIES v.7
PDTA114E_SERIES v.7 20030410 Product specification - -
PDTA114E_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 10 — 21 December 2011 15 of 17
NXP Semiconductors PDTA114E series
PNP resistor-equipped transistors; R1 = 10 k, R2 = 10 k
13. Legal information
13.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
13.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
: hitE:I/www.nxg.com salesaddresses®nx9£0m
PDTA114E_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 10 — 21 December 2011 16 of 17
NXP Semiconductors PDTA114E series
PNP resistor-equipped transistors; R1 = 10 k, R2 = 10 k
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Quick reference data The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
NXP Semiconductors PDTA114E series
PNP resistor-equipped transistors; R1 = 10 k, R2 = 10 k
© NXP B.V. 2011. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 21 December 2011
Document identifier: PDTA114E_SER
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
15. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
6 Thermal characteristics . . . . . . . . . . . . . . . . . . 4
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 7
8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 9
8.1 Quality information . . . . . . . . . . . . . . . . . . . . . . 9
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10
10 Packing information . . . . . . . . . . . . . . . . . . . . 10
11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 14
13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 15
13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 15
13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 15
13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 16
14 Contact information. . . . . . . . . . . . . . . . . . . . . 16
15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

Products related to this Datasheet

TRANS PREBIAS PNP 200MW SOT323
Available Quantity: 7,825
Unit Price: 0.26
TRANS PREBIAS PNP 200MW SOT323
Available Quantity: 1,402
Unit Price: 0.26
TRANS PREBIAS PNP 250MW SOT883
Available Quantity: 0
Unit Price: 0.04336
TRANS PNP W/RES 50V SOT-883
Available Quantity: 0
Unit Price: 0
TRANS PREBIAS PNP 150MW SC75
Available Quantity: 0
Unit Price: 0
TRANS PREBIAS PNP 200MW SOT323
Available Quantity: 0
Unit Price: 0.04618
TRANS PREBIAS PNP 50V TO236AB
Available Quantity: 0
Unit Price: 0.04336
TRANS PREBIAS PNP 50V TO236AB
Available Quantity: 0
Unit Price: 0.03401
TRANS PREBIAS PNP 200MW SOT323
Available Quantity: 0
Unit Price: 0.03622
TRANS PREBIAS PNP 50V TO236AB
Available Quantity: 0
Unit Price: 0.24
TRANS PREBIAS PNP 50V TO236AB
Available Quantity: 0
Unit Price: 0.24
TRANS PREBIAS PNP 200MW SOT323
Available Quantity: 1,402
Unit Price: 0.26
TRANS PREBIAS PNP 150MW SC75
Available Quantity: 0
Unit Price: 0
TRANS PREBIAS PNP 150MW SC75
Available Quantity: 0
Unit Price: 0
TRANS PREBIAS PNP 150MW SC-75
Available Quantity: 0
Unit Price: 0
TRANS PREBIAS PNP 200MW SOT323
Available Quantity: 7,825
Unit Price: 0.26
SMALL SIGNAL BIPOLAR TRANSISTOR
Available Quantity: 0
Unit Price: 0
SMALL SIGNAL BIPOLAR TRANSISTOR
Available Quantity: 0
Unit Price: 0
SMALL SIGNAL BIPOLAR TRANSISTOR
Available Quantity: 0
Unit Price: 0
PDTA114 - 0.1A, 50V, PNP
Available Quantity: 0
Unit Price: 0