BT168GW Datasheet by WeEn Semiconductors

#2 um mm‘um Table 1. Q ' k reference data Fig. 1 half si m Fig. 3
BT168GW
SCR
21 August 2018 Product data sheet
1. General description
Planar passivated SCR with sensitive gate in a SOT223 surface mountable plastic package. This
SCR is designed to be interfaced directly to microcontrollers, logic integrated circuits and other low
power gate trigger circuits.
2. Features and benefits
Sensitive gate
Planar passivated for voltage ruggedness and reliability
Direct triggering from low power drivers and logic ICs
Surface mountable package
3. Applications
Circuit breakers
RCD/GFI/LCCB applications
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VRRM repetitive peak reverse
voltage
- - 600 V
IT(AV) average on-state
current
half sine wave; Tsp ≤ 112 °C; Fig. 1 - - 0.63 A
IT(RMS) RMS on-state current half sine wave; Tsp ≤ 112 °C; Fig. 2;
Fig. 3
- - 1 A
half sine wave; Tj(init) = 25 °C;
tp = 10 ms; Fig. 4; Fig. 5
- - 8 AITSM non-repetitive peak on-
state current
half sine wave; Tj(init) = 25 °C;
tp = 8.3 ms
- - 9 A
Tjjunction temperature - - 125 °C
Static characteristics
IGT gate trigger current VD = 12 V; IT = 10 mA; Tj = 25 °C;
Fig. 9
20 50 200 µA
Dynamic characteristics
dVD/dt rate of rise of off-state
voltage
VDM = 402 V; Tj = 125 °C; RGK = 1 kΩ;
(VDM = 67% of VDRM); exponential
waveform; Fig. 14
500 800 - V/µs
BT1GSGW v; Tl = 125 xponenlia Fig. 14 Table 2. Plnnlng lnformatlon —— ’E‘A AfiK ‘ W Table 3. Orderlng lnformatlon
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SCR
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Product data sheet 21 August 2018 2 / 15
Symbol Parameter Conditions Min Typ Max Unit
VDM = 402 V; Tj = 125 °C; (VDM = 67%
of VDRM); exponential waveform; gate
open circuit; Fig. 14
- 25 - V/µs
5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 K cathode
2 A anode
3 G gate
4 mb mb; connected to anode
1 32
4
SC-73 (SOT223)
sym037
A K
G
6. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
BT168GW SC-73 plastic surface-mounted package with increased heatsink; 4
leads
SOT223
BT1 686W Table 4. Lim g values In accordance with the Absolute Maximum Rating System (IEC 60134). Fig.1 Fig. 2 Fig. 3 halir sine wav Fig, 4 Fig, 5 001555495 Tw)
WeEn Semiconductors BT168GW
SCR
BT168GW All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet 21 August 2018 3 / 15
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDRM repetitive peak off-state
voltage
[1] - 600 V
VRRM repetitive peak reverse
voltage
- 600 V
IT(AV) average on-state current half sine wave; Tsp ≤ 112 °C; Fig. 1 - 0.63 A
IT(RMS) RMS on-state current half sine wave; Tsp ≤ 112 °C; Fig. 2; Fig. 3 - 1 A
half sine wave; Tj(init) = 25 °C; tp = 10 ms;
Fig. 4; Fig. 5
- 8 AITSM non-repetitive peak on-
state current
half sine wave; Tj(init) = 25 °C; tp = 8.3 ms - 9 A
I2t I2t for fusing tp = 10 ms; SIN - 0.32 A²s
dIT/dt rate of rise of on-state
current
IT = 2 A; IG = 10 mA; dIG/dt = 100 mA/µs - 50 A/µs
IGM peak gate current - 1 A
VRGM peak reverse gate
voltage
- 5 V
PGM peak gate power - 2 W
PG(AV) average gate power over any 20 ms period - 0.1 W
Tstg storage temperature -40 150 °C
Tjjunction temperature - 125 °C
[1] Although not recommended, off-state voltages up to 800 V may be applied without damage, but the thyristor may switch to the on-
state.
IT(AV) (A)
0 0.80.60.40.2
001aab496
0.2
0.6
1
Ptot
(W)
0
119
113
110
Tsp(max)
(°C)
125
4
0.4
0.8
116
122
a = 1.57
1.9
2.8
2.2
conduction
angle
(degrees)
form
factor
a
30
60
90
120
180
4
2.8
2.2
1.9
1.57
α
α = conduction angle; a = form factor = IT(RMS) / IT(AV)
Fig. 1. Total power dissipation as a function of average on-state current; maximum values
BT1686W
WeEn Semiconductors BT168GW
SCR
BT168GW All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet 21 August 2018 4 / 15
001aab498
0.4
0.8
1.2
IT(RMS)
(A)
0
112 °C
Tsp (°C)
-50 1501000 50
Fig. 2. RMS on-state current as a function of solder
point temperature; maximum values
001aab500
1
0.5
1.5
2
IT(RMS)
(A)
0
surge duration (s)
10-2 10-1 101
f = 50 Hz; Tsp = 112 °C
Fig. 3. RMS on-state current as a function of surge
duration; maximum values
001aab497
tp (s)
10-5 10-2
10-3
10-4
102
10
103
ITSM
(A)
1
tp
Tj(init) = 25 °C max
ITITSM
t
tp ≤ 10 ms
Fig. 4. Non-repetitive peak on-state current as a function of pulse width for sinusoidal currents; maximum values
BT1686W 901mm
WeEn Semiconductors BT168GW
SCR
BT168GW All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet 21 August 2018 5 / 15
001aab499
4
6
2
8
10
ITSM
(A)
0
number of cycles
1 103
102
10
tp
Tj(init) = 25 °C max
ITITSM
t
f = 50 Hz
Fig. 5. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
BT1 686W Table 5. Thermal characteristics mm! b 0173332245 LEL L
WeEn Semiconductors BT168GW
SCR
BT168GW All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet 21 August 2018 6 / 15
8. Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-sp) thermal resistance
from junction to solder
point
Fig. 6 - - 15 K/W
printed circuit board mounted; minimum
footprint; Fig. 7
- 156 - K/WRth(j-a) thermal resistance
from junction to
ambient free air printed circuit board mounted; pad
area; Fig. 8
- 70 - K/W
0
0
3
a
a
e
2
4
5
1
0
2
1
0
-
1
1
1
0
1
0
2
1
0
-
5
1
0
-
4
1
0
-
3
1
0
-2
1
1
0
t
p
(
s
)
Z
t
h
(
j
-
s
p
)
(
K
/
W
)
1
0
-
1
t
p
P
t
Fig. 6. Transient thermal impedance from junction to solder point as a function of pulse width
BT1686W 001aan509 amasnm
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SCR
BT168GW All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet 21 August 2018 7 / 15
001aab508
3.8 min
1.5
min
1.5
min
(3×)
2.3
4.6
6.3
1.5
min
All dimensions are in mm
Fig. 7. Minimum footprint SOT223
001aab509
7
4.6
15
36
9
10
18
4.5
60
50
All dimensions are in mm
Printed circuit board:
FR4 epoxy glass (1.6 mm thick), copper laminate
(35 um thick)
Fig. 8. Printed circuit board pad area: SOT223
BT1 686W Table 6. Characteristics 2v;1] = %olVDR Fig. 14 v; n = 125 xponenlia Fig. 14
WeEn Semiconductors BT168GW
SCR
BT168GW All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet 21 August 2018 8 / 15
9. Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
IGT gate trigger current VD = 12 V; IT = 10 mA; Tj = 25 °C;
Fig. 9
20 50 200 µA
ILlatching current VD = 12 V; IG = 0.5 mA; Tj = 25 °C;
RGK(ext) = 1 kΩ; Fig. 10
- 2 6 mA
IHholding current VD = 12 V; Tj = 25 °C; RGK(ext) = 1 kΩ;
Fig. 11
- 2 5 mA
VTon-state voltage IT = 1.2 A; Tj = 25 °C; Fig. 12 - 1.25 1.7 V
VD = 12 V; IT = 10 mA; Tj = 25 °C;
Fig. 13
- 0.5 0.8 VVGT gate trigger voltage
VD = 600 V; IT = 10 mA; Tj = 125 °C 0.2 0.3 - V
IDoff-state current VD = 600 V; RGK(ext) = 1 kΩ; Tj = 125 °C - 0.05 0.1 mA
IRreverse current VR = 600 V; Tj = 125 °C; RGK(ext) = 1 kΩ - 0.05 0.1 mA
Dynamic characteristics
VDM = 402 V; Tj = 125 °C; RGK = 1 kΩ;
(VDM = 67% of VDRM); exponential
waveform; Fig. 14
500 800 - V/µsdVD/dt rate of rise of off-state
voltage
VDM = 402 V; Tj = 125 °C; (VDM = 67%
of VDRM); exponential waveform; gate
open circuit; Fig. 14
- 25 - V/µs
tgt gate-controlled turn-on
time
ITM = 2 A; VD = 600 V; IG = 10 mA; dIG/
dt = 0.1 A/µs; Tj = 25 °C
- 2 - µs
tqcommutated turn-off
time
VDM = 402 V; Tj = 125 °C; ITM = 1.6 A;
VR = 35 V; (dIT/dt)M = 30 A/µs; dVD/
dt = 2 V/µs; RGK(ext) = 1 kΩ; (VDM =
67% of VDRM)
- 100 - µs
BT1686W 0015mm)? MYEabfiflé? \\ \ T: T: 001mm 00mm“
WeEn Semiconductors BT168GW
SCR
BT168GW All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet 21 August 2018 9 / 15
Tj (°C)
-50 1501000 50
001aab502
1
2
3
0
IGT
IGT(25°C)
Fig. 9. Normalized gate trigger current as a function of
junction temperature
Tj (°C)
-50 1501000 50
001aab503
1
2
3
0
IL
IL(25°C)
RGK = 1 kΩ
Fig. 10. Normalized latching current as a function of
junction temperature
Tj (°C)
-50 1501000 50
001aab504
1
2
3
0
IH
IH(25°C)
RGK = 1 kΩ
Fig. 11. Normalized holding current as a function of
junction temperature
001aab505
VT (V)
0.4 2.821.2
2
3
1
4
5
IT
(A)
0
(1) (2) (3)
Vo = 1.0 V; Rs = 0.27 Ω
(1) Tj = 125 °C; typical values
(2) Tj = 125 °C; maximum values
(3) Tj = 25 °C; maximum values
Fig. 12. On-state current as a function of on-state
voltage
BT1686W 0015511501 0015317507
WeEn Semiconductors BT168GW
SCR
BT168GW All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet 21 August 2018 10 / 15
Tj (°C)
-50 1501000 50
001aab501
0.8
1.2
1.6
0.4
VGT
VGT(25°C)
Fig. 13. Normalized gate trigger voltage as a function of
junction temperature
001aab507
Tj (°C)
0 15010050
103
102
104
dVD/dt
(V/µs)
10
(1)
(2)
(1) RGK = 1 kΩ
(2) gate open circuit
Fig. 14. Critical rate of rise of off-state voltage as a
function of junction temperature; typical values
BT1686W Plastic surface-mounted package with increased heatsink; 4 leads SOT223 , 2- \ “7 ‘ \ IL- 5-- m a m Egg”
WeEn Semiconductors BT168GW
SCR
BT168GW All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet 21 August 2018 11 / 15
10. Package outline
UNIT A1bpc D E e1HELpQ ywv
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
mm 0.10
0.01
1.8
1.5
0.80
0.60
b1
3.1
2.9
0.32
0.22
6.7
6.3
3.7
3.3 2.3
e
4.6 7.3
6.7
1.1
0.7
0.95
0.85 0.1 0.10.2
DIMENSIONS (mm are the original dimensions)
SOT223 SC-73 04-11-10
06-03-16
wM
bp
D
b1
e1
e
A
A1
Lp
Q
detail X
HE
E
vMA
AB
B
c
y
0 2 4 mm
scale
A
X
1 32
4
Plastic surface-mounted package with increased heatsink; 4 leads SOT223
Fig. 15. Package outline SC-73 (SOT223)
BT1686W ¢,_ 1 ”rm: 592223 I, 50(223 iw 1 9 (2*) L ‘@ \L
WeEn Semiconductors BT168GW
SCR
BT168GW All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet 21 August 2018 12 / 15
11. Soldering
sot223_fr
1.2
(4×)
1.2
(3×)
1.3
(4×)
1.3
(3×)
6.15
7
3.85
3.6
3.5
0.3
3.9 7.65
2.3 2.3
6.1
4
2 31
solder lands
solder resist
occupied area
solder paste
Dimensions in mm
Fig. 16. Reflow soldering footprint for SC-73 (SOT223)
sot223_fw
1.9
6.7
8.9
8.7
1.9
(3×)
1.9
(2×)
1.1
6.2
2.7 2.7
2
4
31
solder lands
solder resist
occupied area
preferred transport
direction during soldering
Dimensions in mm
Fig. 17. Wave soldering footprint for SC-73 (SOT223)
hem sIgn. ata sheaf Is axplalnsd In same 5 omevIeeIs) assumed In ml; 5 comma": was published all he Imam pmud status lmnr mg Mww ween-semi com BT1 686W
WeEn Semiconductors BT168GW
SCR
BT168GW All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet 21 August 2018 13 / 15
12. Legal information
Data sheet status
Document
status [1][2]
Product
status [3]
Definition
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.ween-semi.com.
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. WeEn Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences
of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local WeEn
Semiconductors sales office. In case of any inconsistency or conflict with the
short data sheet, the full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
WeEn Semiconductors and its customer, unless WeEn Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the WeEn Semiconductors product
is deemed to offer functions and qualities beyond those described in the
Product data sheet.
Disclaimers
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, WeEn Semiconductors does not
give any representations or warranties, expressed or implied, as to the
accuracy or completeness of such information and shall have no liability for
the consequences of use of such information. WeEn Semiconductors takes
no responsibility for the content in this document if provided by an information
source outside of WeEn Semiconductors.
In no event shall WeEn Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation -
lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, WeEn Semiconductors’ aggregate and cumulative liability
towards customer for the products described herein shall be limited in
accordance with the Terms and conditions of commercial sale of WeEn
Semiconductors.
Right to make changes — WeEn Semiconductors reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — WeEn Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical
or safety-critical systems or equipment, nor in applications where failure
or malfunction of an WeEn Semiconductors product can reasonably
be expected to result in personal injury, death or severe property or
environmental damage. WeEn Semiconductors and its suppliers accept no
liability for inclusion and/or use of WeEn Semiconductors products in such
equipment or applications and therefore such inclusion and/or use is at the
customer’s own risk.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. WeEn Semiconductors makes
no representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using WeEn Semiconductors products, and WeEn
Semiconductors accepts no liability for any assistance with applications or
customer product design. It is customer’s sole responsibility to determine
whether the WeEn Semiconductors product is suitable and fit for the
customer’s applications and products planned, as well as for the planned
application and use of customer’s third party customer(s). Customers should
provide appropriate design and operating safeguards to minimize the risks
associated with their applications and products.
WeEn Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default
in the customer’s applications or products, or the application or use by
customer’s third party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and products using WeEn
Semiconductors products in order to avoid a default of the applications
and the products or of the application or use by customer’s third party
customer(s). WeEn does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific WeEn Semiconductors product is automotive
qualified, the product is not suitable for automotive use. It is neither qualified
nor tested in accordance with automotive testing or application requirements.
WeEn Semiconductors accepts no liability for inclusion and/or use of non-
automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards,
customer (a) shall use the product without WeEn Semiconductors’ warranty
of the product for such automotive applications, use and specifications, and
(b) whenever customer uses the product for automotive applications beyond
WeEn Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies WeEn Semiconductors for
any liability, damages or failed product claims resulting from customer
design and use of the product for automotive applications beyond WeEn
Semiconductors’ standard warranty and WeEn Semiconductors’ product
specifications.
BT1686W
WeEn Semiconductors BT168GW
SCR
BT168GW All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet 21 August 2018 14 / 15
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
BT1686W
WeEn Semiconductors BT168GW
SCR
BT168GW All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet 21 August 2018 15 / 15
13. Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Limiting values............................................................. 3
8. Thermal characteristics............................................... 6
9. Characteristics.............................................................. 8
10. Package outline........................................................ 11
11. Soldering................................................................... 12
12. Legal information..................................................... 13
© WeEn Semiconductors Co., Ltd. 2018. All rights reserved
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Date of release: 21 August 2018