BF1118(R,W,WR) Datasheet by NXP USA Inc.

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1. Product profile
1.1 General description
These switches are a combination of a depletion type Field-Effect Transistor (FET) and a
band-switching diode. The BF1118, BF1118R, BF1118W and BF1118WR are
encapsulated in the SOT143B, SOT143R, SOT343N and SOT343R respectively. The low
loss and high isolation capabilities of these devices provide excellent RF switching
functions. The gate of the MOSFET can be isolated from ground with the diode, resulting
in low losses. Integrated diodes between gate and source and between gate and drain
protect against excessive input voltage surges.
1.2 Features and benefits
Specially designed for low loss RF switching up to 1 GHz
1.3 Applications
Various RF switching applications such as:
Passive loop through for VCR tuner
Transceiver switching
1.4 Quick reference data
[1] IF= diode forward current.
BF1118; BF1118R; BF1118W;
BF1118WR
Silicon RF switches
Rev. 3 — 14 November 2014 Product data sheet
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
Lins(on) on-state insertion loss RS=R
L=50; f 1GHz;
VSK =V
DK =0V; I
F=0mA
[1] --2.5dB
ISLoff off-state isolation RS=R
L=50; f 1GHz;
VSK =V
DK = 3.3 V; IF=1mA 30 - - dB
RDSon drain-source on-state resistance VKS =0V; I
D= 1 mA - 15 23.3
VGS(p) gate-source pinch-off voltage VDS =1V; I
D=20A-22.44 V
11? fig W H ‘ ‘ a ‘ ‘ I mm 3 ‘ ‘ ‘ E ‘ _ 1717153le 2 4 1r 170153.043
BF1118_1118R_1118W_1118WR All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 3 — 14 November 2014 2 of 13
NXP Semiconductors BF1118(R); BF1118W(R)
Silicon RF switches
2. Pinning information
[1] Drain and source are interchangeable.
3. Ordering information
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
BF1118 (SOT143B)
1 FET gate; diode anode
2 diode cathode
3 source [1]
4drain [1]
BF1118R (SOT143R)
1 FET gate; diode anode
2 diode cathode
3 source [1]
4drain [1]
BF1118W (SOT343N)
1 FET gate; diode anode
2 diode cathode
3 source [1]
4drain [1]
BF1118WR (SOT343R)
1 FET gate; diode anode
2 diode cathode
3 source [1]
4drain [1]
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Table 3. Ordering information
Type number Package
Name Description Version
BF1118 - plastic surface-mounted package; 4 leads SOT143B
BF1118R - plastic surface-mounted package; reverse pinning; 4 leads SOT143R
BF1118W - plastic surface-mounted package; 4 leads SOT343N
BF1118WR - plastic surface-mounted package; reverse pinning; 4 leads SOT343R
BF1118_1118R_1118W_1118WR All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 3 — 14 November 2014 3 of 13
NXP Semiconductors BF1118(R); BF1118W(R)
Silicon RF switches
4. Marking
5. Limiting values
6. Thermal characteristics
[1] Soldering point of FET gate and diode anode lead.
Table 4. Marking
Type number Marking code
BF1118 VC%
BF1118R VD%
BF1118W VB
BF1118WR VC
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
FET
VDS drain-source voltage - 3 V
VSD source-drain voltage - 3 V
VDG drain-gate voltage - 7 V
VSG source-gate voltage - 7 V
IDdrain current - 10 mA
Diode
VRreverse voltage - 35 V
IFforward current - 100 mA
FET and diode
Tstg storage temperature 65 +150 C
Tjjunction temperature - 150 C
Table 6. Thermal characteristics
Symbol Parameter Conditions Typ Unit
Rth(j-sp) thermal resistance from junction
to solder point
[1] 250 K/W
BF1118_1118R_1118W_1118WR All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 3 — 14 November 2014 4 of 13
NXP Semiconductors BF1118(R); BF1118W(R)
Silicon RF switches
7. Static characteristics
8. Dynamic characteristics
[1] IF= diode forward current.
[2] Ci is the series connection of CGS and CGK; Co is the series connection of CGD and CGK.
[3] Guaranteed on AQL basis; inspection level S4, AQL 1.0.
Table 7. Static characteristics
Tj = 25
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
FET
V(BR)GSS gate-source breakdown voltage VDS =0V; I
GS =0.1mA - - 7V
VGS(p) gate-source pinch-off voltage VDS =1V; I
D=20A-22.44 V
IDSX drain cut-off current VGS =3.3 V; VDS =1 V --16A
IGSS gate leakage current VGS =3.3 V; VDS = 0 V - - 100 nA
RDSon drain-source on-state resistance VGS =0V; I
D=1mA - 15 23.3
Diode
VFforward voltage IF= 10 mA - - 1 V
IRreverse current VR=25V --50nA
VR=20V; T
amb =75C --1A
Table 8. Dynamic characteristics
Common cathode; Tamb = 25
C.
Symbol Parameter Conditions Min Typ Max Unit
FET and diode
Lins(on) on-state insertion loss VSK =V
DK =0V; I
F=0mA [1]
RS=R
L=50; f 1GHz - - 2.5 dB
RS=R
L=50; f = 1 GHz - 1.5 - dB
RS=R
L=75; f 1GHz - - 2.5 dB
ISLoff off-state isolation VSK =V
DK = 3.3 V; IF=1mA
RS=R
L=50; f 1GHz 30 - - dB
RS=R
L=50; f = 1 GHz - 35 - dB
RS=R
L=75; f 1GHz 30 - - dB
RDSon drain-source on-state resistance VKS =0V; I
D= 1 mA - 15 23.3
Ciinput capacitance f = 1 MHz [2]
VSK =V
DK = 3.3 V; IF=1mA -1-pF
VSK =V
DK =0V; I
F=0mA - 0.65 0.9 pF
Cooutput capacitance f = 1 MHz [2]
VSK =V
DK = 3.3 V; IF=1mA -1-pF
VSK =V
DK =0V; I
F=0mA - 0.65 0.9 pF
Diode
Cddiode capacitance f = 1 MHz; VR=0V - 1.1 - pF
rDdiode forward resistance IF= 2 mA; f = 100 MHz [3] --0.9
AFT H « 3* 25 I” v 001351989
BF1118_1118R_1118W_1118WR All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 3 — 14 November 2014 5 of 13
NXP Semiconductors BF1118(R); BF1118W(R)
Silicon RF switches
VSK = VDK = 0 V; RS = RL = 50 ; IF = 0 mA (diode
forward current).
Measured in test circuit; see Figure 3.
VSK = VDK = 3.3 V; RS = RL = 50 ; IF = 1 mA (diode
forward current).
Measured in test circuit; see Figure 3.
Fig 1. On-state insertion loss as a function of
frequency; typical values Fig 2. Off-state isolation as a function of frequency;
typical values
On-state: V = 0 V.
Off-state: V = 3.3 V.
Fig 3. Test circuit
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BF1118_1118R_1118W_1118WR All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 3 — 14 November 2014 6 of 13
NXP Semiconductors BF1118(R); BF1118W(R)
Silicon RF switches
9. Package outline
Fig 4. Package outline SOT143B
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BF1118_1118R_1118W_1118WR All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 3 — 14 November 2014 7 of 13
NXP Semiconductors BF1118(R); BF1118W(R)
Silicon RF switches
Fig 5. Package outline SOT143R
BF1118_1118R_1118W_1118WR All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 3 — 14 November 2014 8 of 13
NXP Semiconductors BF1118(R); BF1118W(R)
Silicon RF switches
Fig 6. Package outline SOT343N
BF1118_1118R_1118W_1118WR All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 3 — 14 November 2014 9 of 13
NXP Semiconductors BF1118(R); BF1118W(R)
Silicon RF switches
Fig 7. Package outline SOT343R
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BF1118_1118R_1118W_1118WR All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 3 — 14 November 2014 10 of 13
NXP Semiconductors BF1118(R); BF1118W(R)
Silicon RF switches
10. Handling information
11. Abbreviations
12. Revision history
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
Table 9. Abbreviations
Acronym Description
AQL Acceptable Quality Level
MOSFET Metal-Oxide Semiconductor Field-Effect Transistor
RF Radio Frequency
S4 Special inspection level 4
VCR Video Cassette Recorder
Table 10. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BF1118_1118R_1118W_1118WR v.3 20141114 Product data sheet - BF1118_1118R_1118W_
1118WR v.2
Modifications: Section 10 on page 10: The information has been moved from Section 1.1 to
this section.
Table 7 on page 4: The minimum value for V(BR)GSS has been removed and a
maximum value has been set instead.
BF1118_1118R_1118W_1118WR v.2 20120111 Product data sheet - BF1118_1118R_1118W_
1118WR v.1
BF1118_1118R_1118W_1118WR v.1 20100629 Product data sheet - -
BF1118_1118R_1118W_1118WR All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 3 — 14 November 2014 11 of 13
NXP Semiconductors BF1118(R); BF1118W(R)
Silicon RF switches
13. Legal information
13.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
13.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
: hitE:I/www.nxg.com salesaddresses®nx9£0m
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Product data sheet Rev. 3 — 14 November 2014 12 of 13
NXP Semiconductors BF1118(R); BF1118W(R)
Silicon RF switches
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
NXP Semiconductors BF1118(R); BF1118W(R)
Silicon RF switches
© NXP Semiconductors N.V. 2014. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 14 November 2014
Document identifier: BF1118_1118R_1118W_1118WR
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
15. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
6 Thermal characteristics . . . . . . . . . . . . . . . . . . 3
7 Static characteristics. . . . . . . . . . . . . . . . . . . . . 4
8 Dynamic characteristics . . . . . . . . . . . . . . . . . . 4
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 6
10 Handling information. . . . . . . . . . . . . . . . . . . . 10
11 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 10
12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10
13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11
13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
13.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
14 Contact information. . . . . . . . . . . . . . . . . . . . . 12
15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

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