C30645L-080, C30662L-200 Datasheet by Excelitas Technologies

Large Area and Low Noise lnGaAs Avalanche Photodiode provide high quantum efficiency and high responsivity at low noise. Excelitas’ £30545L7080 and CSDSEZLeZDD series Avalanche Photodiodes are high speed, large area InGaAs APDs that Symbol Min Typ Max VBD 45 50 70 Spectral Range AA 1000 1700 nm Meek 1550 nm Responsivity R 9.4 A/W Recommended Operating Gain1 M 10 20 ERCELITAS” TECHNOLOGIES
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C30645L-080_C30662L-200_Rev.2021.05 Page 1 of 9
Datasheet
Photon Detection
Key Features
Spectral response 1000 nm – 1700 nm
High responsivity
Low dark current and noise
Large active area of 80 µm and 200 µm
Compact, robust ceramic SMT package
Customizations (e.g. filters) possible
RoHS compliant
Applications
LiDAR / ToF measurements
Eye-safe Laser range finding
High volume consumer applications
Optical time-domain reflectometer (OTDR)
Optical communication systems
Laser scanning
All specifications are referring to an ambient temperature of TA = 22 °C, λ = 1550 nm and M = 10,
unless otherwise specified.
Table 1: Key parameters
Parameter Symbol Min Typ Max Unit
Breakdown Voltage VBD 45 50 70 V
Spectral Range Δλ 1000 1700 nm
Peak Responsivity peak 1550 nm
Responsivity R 9.4 A/W
Recommended Operating Gain
1
M 10 20
Note 1: For further information on the usage at different gains,
please contact our experts at Excelitas Technologies.
C30645L-080 and C30662L-200 – 1550 nm APDs in SMD package
Large Area and Low Noise InGaAs Avalanche Photodiode
Excelitas
C30645L
-
080
-
200 series Avalanche Photodiodes are high speed, large area InGaAs APDs that
provide high quantum efficiency and high responsivity at low noise.
C30645L-080 C30662L-200 Active Area Shape Circular Circular Useful Area 5027 31420 pm2 so 200 um Symbol Value Forward Current IF 5 mA Reverse Current IR 0.4 mA Plat 20 mW Storage Temperature T5 -60 125 °C Operating Temperature Top -20 70 °C Soldering Temperature3 Tp 250 °C Symbol Minimum Typical Maximum Rise Time/FallTime‘ tr/tf 0.3 ns Bandwidth fads 1000 MHz 1 GE 75 % Symbol Minimum Typical Maximum Rise Time / Fall Time‘ tr/tf 0.4 ns Bandwidth fzda 600 850 MHz 1 GE 75 %
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C30645L-080 and C30662L-200 – 1550 nm APDs in SMD Package
Large Area and Low Noise InGaAs Avalanche Photodiodes
Table 2: Ordering Information
Parameter C30645L-080 C30662L-200 Units
Active Area Shape Circular Circular
Useful Area 5027 31420 µm
2
Useful Diameter 80 200 µm
Table 3: Absolute Maximum Ratings
Parameter Symbol Value Units
Forward Current IF 5 mA
Reverse Current IR 0.4 mA
Total Power Dissipation Ptot 20 mW
Storage Temperature TS -60 125 °C
Operating Temperature TOp -20 70 °C
Soldering Temperature
3
TP 250 °C
Note 1: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to
the device.
Note 2: Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Note 3: For detailed reflow information, refer to Table 8.
Table 4: Optical Specifications C30645L-080
Parameter Symbol Minimum Typical Maximum Units
Rise Time / Fall Time
1
tr / tf 0.3 ns
Bandwidth f3dB 1000 MHz
Quantum Efficiency
2
QE 75 %
Table 5: Optical Specifications C30662L-200
Parameter Symbol Minimum Typical Maximum Units
Rise Time / Fall Time
1
tr / tf 0.4 ns
Bandwidth f3dB 600 850 MHz
Quantum Efficiency
2
QE 75 %
Note 1: As estimated by 𝑡/ = .

Note 2: Quantum Efficiency is a not directly measurable quantity. The above specified typical parameter is
linked to the typical responsivity by 𝑄𝐸 =  
 . Please also refer to Figure 4.
Symbol Minimum Typical Maximum Operating Point from Breakdown AV 2.5 V Temperature Coefficient of V D AVED/AT 0.14 0.20 V/°C c 1.45 pF Dark Current‘ in 5 50 nA Dark Noise‘ in 0.35 1.00 pA/V(Hz) Noise Equivalent Power3 NEP 0.04 pW/V(Hz) Symbol Minimum Typical Maximum Operating Point from Breakdown AV 2.0 V Temperature Coefficient of V D AV/AT 0.14 0.20 V/°C Capacitance C 2.70 pF Dark Current‘ in 60 150 nA Dark Noise‘ in 0.80 1.50 pA/V(Hz) 3 NEP 0.09 pW/V(Hz)
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C30645L-080 and C30662L-200 – 1550 nm APDs in SMD Package
Large Area and Low Noise InGaAs Avalanche Photodiodes
Table 6: Electrical Specifications C30645L-080
Parameter Symbol Minimum
Typical
Maximum
Units
Operating Point from Breakdown ΔV 2.5 V
Temperature Coefficient of VBD ΔVBD/ΔT
0.14 0.20 V/°C
Capacitance C 1.45 pF
Dark Current
1
iD 5 50 nA
Dark Noise
2
iN 0.35 1.00 pA/(Hz)
Noise Equivalent Power
3
NEP 0.04 pW/(Hz)
Table 7: Electrical Specifications C30662L-200
Parameter Symbol
Minimum
Typical
Maximum
Units
Operating Point from Breakdown ΔV 2.0 V
Temperature Coefficient of VBD ΔV/ΔT 0.14 0.20 V/°C
Capacitance C 2.70 pF
Dark Current
1
iD 60 150 nA
Dark Noise
2
iN 0.80 1.50 pA/(Hz)
Noise Equivalent Power
3
NEP 0.09 pW/(Hz)
Note 1: Surface (iDS) and bulk (iDB) dark current are contributing to the total dark current by 𝑖= 𝑖 + 𝑖𝑀.
Note 2: Due to the natural fluctuations of amplified charge carriers the APD will also generate noise when
not illuminated. Since the noise characteristics and hence the signal-to-noise ratio (SNR) are
dependant on the bandwidth (f3dB) and operating wavelength (λ) inside the final system the
illuminated noise
𝑖 =2𝑞𝑓
[𝑖 +(𝑖𝑀+ 𝑅(𝜆)𝑀𝑃)𝐹]
needs to be considered. Hence the SNR defines as
𝑆𝑁𝑅 = 𝑖
𝑖
=(𝑃𝑅(𝜆)𝑀)
𝑖
with P the incident optical power in W, R0(λ) the intrinsic (M = 1) responsivity in A/W, q the charge
carrier and an excess noise factor of typical 5.5 for InGaAs materials.
Note 3: The NEP is specified in dark conditions as 𝑁𝐸𝑃 = 
()
[13.00 SECTION AvA CONNECTION: PAD 1, 2, 3, 4, 6: POSITIVE [CATHODB PAD 51NEGATWE (ANODEJ C30645L—080 C30662L-200
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C30645L-080 and C30662L-200 – 1550 nm APDs in SMD Package
Large Area and Low Noise InGaAs Avalanche Photodiodes
Figure 1: APD Package Dimension C30645L-080 and C30662L-200
C30645L-080 C30662L-200
— Figure 2: Typical Gain vs. Reverse Bias Figure 3: Typical Gain vs AV 50 100 40 30 Gain Gain 20 10 45 46 47 48 49 50 0 4 8 12 Reverse Bias [V] Operating Point from Breakdown [V] Efficiency vs. Wavelength 90 80 70 60 Dark Current [nA] 50 Quantum Efficiency [96] [m/v] Myusuodsau 40 1000 1200 1400 1600 10 20 30 40 Wavelength [nm] Gain — — Quantum Efficiency Responsivity — C30645L7080 — — C30662L7200
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C30645L-080 and C30662L-200 – 1550 nm APDs in SMD Package
Large Area and Low Noise InGaAs Avalanche Photodiodes
Figure 2: Typical Gain vs. Reverse Bias
Figure 3: Typical Gain vs ΔV
Figure 4: Typical Responsivity and Quantum
Efficiency vs. Wavelength
Figure 5: Typical Dark Current vs. Gain
REEL FOR 12mm CARRIER IAPE (ILLUSTRATION or“) CARRIER VAPE WIIH DEVICE MAX 3000 um ..../ DIMENSIONS ARE IN MILLIMEIERS AM) ARE FOR REFERENCE or“ A 00 $ 1.55 I .75 5.50 l 2.00 8 (X) ._ NoIE oRIENIAIIoN i i zlo m, DIMENSIONS ARE IN MIuIMEIERs AND ARE FOR REFERENCE 0va
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C30645L-080 and C30662L-200 – 1550 nm APDs in SMD Package
Large Area and Low Noise InGaAs Avalanche Photodiodes
Figure 6: Tape and Reel Packaging Specification
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C30645L-080 and C30662L-200 – 1550 nm APDs in SMD Package
Large Area and Low Noise InGaAs Avalanche Photodiodes
Information
Excelitas Technologies’ C30645L-080 and C30662L-200 APDs are high speed, large area InGaAs/InP avalanche
photodiodes. These photodiodes provide high quantum efficiency, high responsivity, and low noise in the
spectral range between 1000 nm and 1700 nm. They are optimized for a wavelength of 1550 nm, suitable to
use in eye-safe laser range finding systems.
The ceramic surface mount package allows for easy integration into high volume applications.
Recognizing that different applications have different performance requirements, Excelitas offers a wide
range of customization of these photodiodes to meet your design challenges. Responsivity and noise
screening, custom device testing and incorporating band pass filters are among many of the application-
specific solutions available.
Testing Methods
Excelitas verifies the electro optical specifications on every device. Hence, a specific voltage, VOP, is supplied
with each device. When the photodiode is operated at this voltage (at 22 °C), it will meet the electrical
specifications shown above. The voltage will be within the range of the breakdown Voltage VBD.
Visual inspection during fabrication is performed as per our quality standard and failed dies are removed.
The following parameters are part of Excelitas testing procedures:
- Breakdown Voltage
- Reach-Through Voltage
- Operating Voltage (M = 10)
- Dark Current (M = 10)
Excelitas Technologies is certified to meet ISO-9001 and are designed to meet MIL-STD-883 and/or MIL-STD-
750 specifications.
Packaging and Shipping
All C30645L-080 and C30662-200 APDs are offered in tape and reel shipping pack for quantities of 3000 units
per reel; as shown in Figure 6.
For sampling quantities, the diodes are shipped in Gel Pack packages.
Profile Feature Symbol Typical Units Minimum Sparkling Temperaiure T5,“... 150 'C Maximum Sparkling Temperature Tsmzx 200 'c Sparkling Time ts 75 5 Minimum Reflow Temperaiure TL 217 'C Peak Temperature T? 244 'C Reflow Time h 65 s Time within T - 5°C tp 25 s Ramp Down Rate AT: 2 °C/s Temperature [“C] 250 200 150 100 50 100 200 Time [s] 300
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C30645L-080 and C30662L-200 – 1550 nm APDs in SMD Package
Large Area and Low Noise InGaAs Avalanche Photodiodes
Storage and handling
Excelitas highly recommends following the below notes:
- Keep devices in an ESD controlled environment until final assembly.
- Keep T&R closed until final assembly
- Remove devices from T&R by using a vacuum pick-up tool
- If a manual picking method is necessary, use a non-marring tweezer to pick the APD by the sides of
the package.
- Do not make contact to the window surface.
MSL Rating
The series of APD diodes comply with a moisture sensitivity level (MSL) rating of 3 as defined in
IPC/JEDEC-J-STD-033C. This allows for up to 168 hours floor life at ≤ 30 °C / 60% RH once removed from the
sealed reel packaging. For complete details refer to the IPC/JEDEC-J-STD-033C specification.
Table 8: Reflow Solder Profile
The following reflow solder profile is a typical used profile for SAC305 solder alloys. Specific solder
parameters depend on the solder alloy used.
Profile Feature
Symbol
Typical
Units
Minimum Sparkling Temperature
T
Smin
150
°C
Maximum Sparkling Temperature
T
Smax
200
°C
Sparkling Time
t
S
75
s
Minimum Reflow Temperature
T
L
217
°C
Peak Temperature
T
P
244
°C
Reflow Time
t
L
65
s
Time within T
P
-
5°C
t
P
25
s
Ramp Down Rate
Δ
T
c
2
°C/s
EKCELITAS' TECHNOLOGIES
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C30645L-080 and C30662L-200 – 1550 nm APDs in SMD Package
Large Area and Low Noise InGaAs Avalanche Photodiodes
RoHS Compliance
This series of APD diodes are designed and built to be fully compliant with the European Union Directive
on restrictions of the use of certain hazardous substances in electrical and electronic equipment.
Warranty
A standard 12-month warranty following shipment applies.
About Excelitas Technologies
Excelitas Technologies is a global technology leader focused on delivering innovative, customized solutions to
meet the lighting, detection and other high-performance technology needs of OEM customers.
Excelitas has a long and rich history of serving our OEM customer base with optoelectronic sensors and
modules for more than 45 years beginning with PerkinElmer, EG&G, and RCA. The constant throughout has
been our innovation and commitment to delivering the highest quality solutions to our customers worldwide.
From aerospace and defense to analytical instrumentation, clinical diagnostics, medical, industrial, and safety
and security applications, Excelitas Technologies is committed to enabling our customers' success in their
specialty end-markets. Excelitas Technologies has approximately 7,000 employees in North America, Europe
and Asia, serving customers across the world.
Excelitas Technologies
22001 Dumberry Road
Vaudreuil-Dorion, Quebec
Canada J7V 8P7
Telephone: (+1) 450.424.3300
Toll-free: (+1) 800.775.6786
Fax: (+1) 450.424.3345
Excelitas Technologies
GmbH & Co. KG
Wenzel-Jaksch-Str. 31
D-65199 Wiesbaden
Germany
Telephone: (+49) 611 492 430
Fax: (+49) 611 492 165
Excelitas Technologies Singapore, Pte. Ltd.
8 Tractor Road
Singapore 627969
Telephone: (+65) 6775 2022 (Main number)
Telephone: (+65) 6770 4366 (Customer Service)
Fax: (+65) 6778-1752
Contact us at http://www.excelitas.com/contact
For a complete listing of our global offices, visit www.excelitas.com/locations
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