AT42QT1012 Datasheet by Microchip Technology

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AT42QT1012
AT42QT1012 Data Sheet
Introduction
The AT42QT1012 (QT1012) is a single key device featuring a touch on/touch off (toggle) output with a
programmable auto switch-off capability. The device is One-channel Toggle-mode QTouch® Touch
Sensor IC with Power Management Functions.
The QT1012 features a digital burst mode charge-transfer sensor designed specifically for touch controls
and a unique “green” feature - the timeout function, which can turn off power after a time delay.
Features
Number of Keys:
One, toggle mode (touch-on / touch-off), plus programmable auto-off delay and external
cancel
Configurable as either a single key or a proximity sensor
• Technology:
Patented spread-s
6 mm x 6 mm or larger (panel thickness dependent); widely different sizes and shapes
possible
Electrode design:
Solid or ring electrode shapes
PCB Layers required:
– One
Electrode materials:
Etched copper, silver, carbon, Indium Tin Oxide (ITO)
Electrode substrates:
PCB, FPCB, plastic films, glass
Panel materials:
Plastic, glass, composites, painted surfaces (low particle density metallic paints possible)
Panel thickness:
Up to 12 mm glass, 6 mm plastic (electrode size and Cs dependent)
Key sensitivity:
Settable via external capacitor (Cs)
• Interface:
Digital output, active high or active low (hardware configurable)
Moisture tolerance:
Increased moisture tolerance based on hardware design and firmware tuning
• Power:
© 2017 Microchip Technology Inc. Datasheet DS40001948A-page 1
1.8 V – 5.5 V; 32 µA at 1.8 V
• Package:
6-pin SOT23-6 (3 x 3 mm) RoHS compliant
8-pin UDFN/USON (2 x 2 mm) RoHS compliant
Signal processing:
Self-calibration, auto drift compensation, noise filtering
AT42QT1012
© 2017 Microchip Technology Inc. Datasheet DS40001948A-page 2
Table of Contents
Introduction......................................................................................................................1
Features.......................................................................................................................... 1
1. Pinout and Schematic................................................................................................5
1.1. Pinout Configurations................................................................................................................... 5
1.2. Pin Descriptions........................................................................................................................... 5
1.3. Schematics...................................................................................................................................6
2. Overview of the AT42QT1012................................................................................... 7
2.1. Introduction...................................................................................................................................7
2.2. Basic Operation............................................................................................................................7
2.3. Electrode Drive.............................................................................................................................7
2.4. Sensitivity..................................................................................................................................... 8
2.5. Moisture Tolerance....................................................................................................................... 8
3. Operation Specifics................................................................................................. 10
3.1. Acquisition Modes...................................................................................................................... 10
3.2. Detect Threshold........................................................................................................................ 10
3.3. Detect Integrator.........................................................................................................................11
3.4. Recalibration Timeout.................................................................................................................11
3.5. Forced Sensor Recalibration...................................................................................................... 11
3.6. Drift Compensation.....................................................................................................................11
3.7. Response Time.......................................................................................................................... 12
3.8. Spread Spectrum....................................................................................................................... 12
3.9. Output Polarity Selection............................................................................................................12
3.10. Output Drive............................................................................................................................... 13
3.11. Auto-Off Delay............................................................................................................................13
3.12. Examples of Typical Applications...............................................................................................21
4. Circuit Guidelines.................................................................................................... 22
4.1. More Information........................................................................................................................ 22
4.2. Sample Capacitor.......................................................................................................................22
4.3. Rs Resistor.................................................................................................................................22
4.4. Power Supply and PCB Layout.................................................................................................. 22
4.5. Power On................................................................................................................................... 23
5. Specifications.......................................................................................................... 24
5.1. Absolute Maximum Specifications..............................................................................................24
5.2. Recommended Operating Conditions........................................................................................ 24
5.3. AC Specifications....................................................................................................................... 24
5.4. Signal Processing.......................................................................................................................25
5.5. DC Specifications....................................................................................................................... 25
5.6. Mechanical Dimensions............................................................................................................. 26
5.7. Part Marking............................................................................................................................... 28
© 2017 Microchip Technology Inc. Datasheet DS40001948A-page 3
5.8. Part Number............................................................................................................................... 28
5.9. Moisture Sensitivity Level (MSL)................................................................................................ 29
6. Associated Documents............................................................................................30
7. Revision History.......................................................................................................31
The Microchip Web Site................................................................................................ 32
Customer Change Notification Service..........................................................................32
Customer Support......................................................................................................... 32
Microchip Devices Code Protection Feature................................................................. 32
Legal Notice...................................................................................................................33
Trademarks................................................................................................................... 33
Quality Management System Certified by DNV.............................................................34
Worldwide Sales and Service........................................................................................35
AT42QT1012
© 2017 Microchip Technology Inc. Datasheet DS40001948A-page 4
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1. Pinout and Schematic
1.1 Pinout Configurations
1.1.1 6-pin SOT23-6
VDD
TIME
SNSK
VSS
OUT
4
1
2
3
5
6
SNS
QT1012
1.1.2 8-pin UDFN/USON
Pin 1 ID
OUT
SNSK
VSS
SNS
VDD
TIME
N/C
N/C
4
3
2
1 8
7
6
5
QT1012
1.2 Pin Descriptions
Table 1-1. Pin Listing
6-Pin 8-Pin Name Type Description If Unused, Connect
To...
1 5 OUT O(1) Output state. To switched circuit and output polarity selection
resistor (Rop)
2 4 VSS P Ground
3 1 SNSK I/O Sense pin. To Cs capacitor and to sense electrode Cs + key
4 8 SNS I/O Sense pin. To Cs capacitor and multiplier configuration resistor
(Rm). Rm must be fitted and connected to either VSS or VDD.
See Section 3.11.4 for details.
Cs
5 7 VDD P Power
6 6 TIME I Timeout configuration pin. Must be connected to either VSS,
VDD, OUT or an RC network. See Section 3.11 for details.
2 N/C Not connected Do not connect
3 N/C Not connected Do not connect
AT42QT1012
© 2017 Microchip Technology Inc. Datasheet DS40001948A-page 5
(1) I/O briefly on power-up
I Input only O Output only, push-pull
I/O Input/output P Ground or power
1.3 Schematics
1.3.1 6-pin SOT23-6
Figure 1-1. Basic Circuit Configuration
(active high output, toggle on/off, no auto switch off)
VDD
TIME
VSS
2
6
5
OUT 1
Rop
VDD
Cs
SNSK
SNS
4
3
Rs
Note: bypass capacitor to be tightly
wired between VDD and VSS and
kept close to pin 5.
SENSE
ELECTRODE Cby
Rm
1.3.2 8-pin UDFN/USON
Figure 1-2. Basic Circuit Configuration
(active high output, toggle on/off, no auto switch off)
VDD
TIME
VSS
4
6
7
OUT 5
Rop
VDD
Cs
SNSK
SNS
8
1
Rs
Note: bypass capacitor to be tightly
wired between VDD and VSS and
kept close to pin 7.
SENSE
ELECTRODE Cby
Rm N/C
N/C
3
2
For component values in Figure 1-1 and Figure 1-2, check the following sections:
Cs capacitor (Cs) – see Section 4.2 on page 20
Sample resistor (Rs) – see Section 4.3 on page 20
Voltage levels – see Section 4.4 on page 20
Output polarity selection resistor (Rop) – see Section 3.9 on page 10
Rm resistor – see Section 3.11.2 on page 11
Bypass capacitor (Cby) – see page 20
AT42QT1012
© 2017 Microchip Technology Inc. Datasheet DS40001948A-page 6
2. Overview of the AT42QT1012
2.1 Introduction
The AT42QT1012 (QT1012) is a single key device featuring a touch on/touch off (toggle) output with a
programmable auto switch-off capability.
The QT1012 is a digital burst mode charge-transfer sensor designed specifically for touch controls. It
includes all hardware and signal processing functions necessary to provide stable sensing under a wide
variety of changing conditions; only low cost, noncritical components are required for operation. With its
tiny low-cost packages, this device can suit almost any product needing a power switch or other toggle-
mode controlled function, especially power control of small appliances and battery-operated products.
A unique “green” feature of the QT1012 is the timeout function, which can turn off power after a time
delay.
Like all QTouch® devices, the QT1012 features automatic self-calibration, drift compensation, and spread-
spectrum burst modulation in order to provide for the most reliable touch sensing possible.
2.2 Basic Operation
Figure 1-1 and Figure 1-2 show basic circuits for the 6-pin and 8-pin devices.
The QT1012 employs bursts of charge-transfer cycles to acquire its signal. Burst mode permits power
consumption in the microamp range, dramatically reduces RF emissions, lowers susceptibility to EMI, and
yet permits excellent response time. Internally the signals are digitally processed to reject impulse noise,
using a “consensus” filter which requires four consecutive confirmations of a detection before the output
is activated.
The QT switches and charge measurement hardware functions are all internal to the QT1012.
2.3 Electrode Drive
Figure 2-1 shows the sense electrode connections (SNS, SNSK) for the QT1012.
For optimum noise immunity, the electrode should only be connected to the SNSK pin.
In all cases the sample capacitor Cs should be much larger than the load capacitance (Cx). Typical
values for Cx are 5 – 20 pF while Cs is usually 2.2 – 50 nF.
Note: Cx is not a physical discrete component on the PCB, it is the capacitance of the touch electrode
and wiring. It is show in Figure 2-1 to aid understanding of the equivalent circuit.
Increasing amounts of Cx decrease gain, therefore it is important to limit the amount of load capacitance
on both SNS terminals. This can be done, for example, by minimizing trace lengths and widths and
keeping these traces away from power or ground traces or copper pours.
The traces, and any components associated with SNS and SNSK, will become touch sensitive and
should be treated with caution to limit the touch area to the desired location.
To endure that the correct output mode is selected at power-up, the OUT trace should also be carefully
routed.
A series resistor, Rs, should be placed in line with SNSK to the electrode to suppress electrostatic
discharge (ESD) and electromagnetic compatibility (EMC) effects.
AT42QT1012
© 2017 Microchip Technology Inc. Datasheet DS40001948A-page 7
VDD FF (n IIM
Figure 2-1. Sense Connections
VDD
TIME
VSS
2
6
5
OUT 1
VDD
Cs
SNSK
SNS
4
3
Rs
SENSE
ELECTRODE
Cx
Cby
2.4 Sensitivity
2.4.1 Introduction
The sensitivity on the QT1012 is a function of things like the value of Cs, electrode size and capacitance,
electrode shape and orientation, the composition and aspect of the object to be sensed, the thickness
and composition of any overlaying panel material, and the degree of ground coupling of both sensor and
object.
2.4.2 Increasing Sensitivity
In some cases it may be desirable to increase sensitivity; for example, when using the sensor with very
thick panels having a low dielectric constant, or when the device is used as a proximity sensor. Sensitivity
can often be increased by using a larger electrode or reducing panel thickness. Increasing electrode size
can have diminishing returns, as high values of Cx will reduce sensor gain.
The value of Cs also has a dramatic effect on sensitivity, and this can be increased in value with the
trade-off of a slower response time and more power. Increasing the electrode's surface area will not
substantially increase touch sensitivity if its diameter is already much larger in surface area than the
object being detected. Panel material can also be changed to one having a higher dielectric constant,
which will better help to propagate the field.
Ground planes around and under the electrode and its SNSK trace will cause high Cx loading and
decrease gain. The possible signal-to-noise ratio benefits of ground area are more than negated by the
decreased gain from the circuit, and so ground areas around electrodes are discouraged. Metal areas
near the electrode will reduce the field strength and increase Cx loading and should be avoided, if
possible. Keep ground away from the electrodes and traces.
2.4.3 Decreasing Sensitivity
In some cases the QT1012 may be too sensitive. In this case gain can easily be lowered further by
decreasing Cs.
2.5 Moisture Tolerance
The presence of water (condensation, sweat, spilt water, and so on) on a sensor can alter the signal
values measured and thereby affect the performance of any capacitive device. The moisture tolerance of
QTouch devices can be improved by designing the hardware and fine-tuning the firmware following the
AT42QT1012
© 2017 Microchip Technology Inc. Datasheet DS40001948A-page 8
recommendations in the application note Atmel AVR3002: Moisture Tolerant QTouch Design
(downloadable from www.microchip.com).
AT42QT1012
© 2017 Microchip Technology Inc. Datasheet DS40001948A-page 9
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3. Operation Specifics
3.1 Acquisition Modes
3.1.1 Introduction
The OUT pin of the QT1012 can be configured to be active high or active low.
If active high then:
“on” is high
“off” is low
If active low then:
“on” is low
“off” is high
3.1.2 OUT Pin
The QT1012 runs in Low Power (LP) mode. In this mode it sleeps for approximately 80 ms at the end of
each burst, saving power but slowing response. On detecting a possible key touch, it temporarily
switches to fast mode until either the key touch is confirmed or found to be spurious (via the detect
integration process).
If the touch is confirmed, the OUT pin is toggled and the QT1012 returns to LP mode (see figure
"Low Power Mode: Touch Confirmed" below).
If the touch is not valid then the chip returns to LP mode but the OUT pin remains unchanged (see
figure "Low Power Mode: Touch Denied" below).
Figure 3-1. Low Power Mode: Touch Confirmed (Output in Off Condition)
SNSK sleep sleep
fast detect
integrator
OUT
Key
touch
~80 ms
Figure 3-2. Low Power Mode: Touch Denied (Output in Off Condition)
3.2 Detect Threshold
The device detects a touch when the signal has crossed a threshold level. The threshold level is fixed at
10 counts.
AT42QT1012
© 2017 Microchip Technology Inc. Datasheet DS40001948A-page 10
3.3 Detect Integrator
It is desirable to suppress detections generated by electrical noise or from quick brushes with an object.
To accomplish this, the QT1012 incorporates a detect integration (DI) counter that increments with each
detection until a limit is reached, after which the output is activated. If no detection is sensed prior to the
final count, the counter is reset immediately to zero. In the QT1012, the required count is four.
The DI can also be viewed as a “consensus filter” that requires four successive detections to create an
output.
3.4 Recalibration Timeout
If an object or material obstructs the sense electrode the signal may rise enough to create a detection,
preventing further operation. To stop this, the sensor includes a timer which monitors detections. If a
detection exceeds the timer setting, the sensor performs a full recalibration. This does not toggle the
output state but ensures that the QT1012 will detect a new touch correctly. The timer is set to activate this
feature after ~60 s. This will vary slightly with Cs.
3.5 Forced Sensor Recalibration
The QT1012 has no recalibration pin; a forced recalibration is accomplished when the device is powered
up or after the recalibration timeout. However, supply drain is low so it is a simple matter to treat the
entire IC as a controllable load; driving the QT1012 VDD pin directly from another logic gate or a
microcontroller port will serve as both power and “forced recalibration”. The source resistance of most
CMOS gates and microcontrollers is low enough to provide direct power without a problem.
3.6 Drift Compensation
Signal drift can occur because of changes in Cx and Cs over time. It is crucial that drift be compensated
for, otherwise false detections, nondetections, and sensitivity shifts will follow.
Drift compensation (Figure 3-3) is performed by making the reference level track the raw signal at a slow
rate, but only while there is no detection in effect. The rate of adjustment must be performed slowly,
otherwise legitimate detections could be ignored. The QT1012 drift compensates using a slew-rate limited
change to the reference level; the threshold and hysteresis values are slaved to this reference.
Once an object is sensed, the drift compensation mechanism ceases since the signal is legitimately high,
and therefore should not cause the reference level to change.
Figure 3-3. Drift Compensation
Threshold
Signal Hysteresis
Reference
Output
The QT1012 drift compensation is asymmetric; the reference level drift-compensates in one direction
faster than it does in the other. Specifically, it compensates faster for decreasing signals than for
AT42QT1012
© 2017 Microchip Technology Inc. Datasheet DS40001948A-page 11
increasing signals. Increasing signals should not be compensated for quickly, since an approaching finger
could be compensated for partially or entirely before even approaching the sense electrode. However, an
obstruction over the sense pad, for which the sensor has already made full allowance, could suddenly be
removed leaving the sensor with an artificially elevated reference level and thus become insensitive to
touch. In this latter case, the sensor will compensate for the object's removal very quickly.
With large values of Cs and small values of Cx, drift compensation will appear to operate more slowly
than with the converse. Note that the positive and negative drift compensation rates are different.
3.7 Response Time
The QT1012 response time is highly dependent on the run mode and burst length, which in turn is
dependent on Cs and Cx. With increasing Cs, response time slows, while increasing levels of Cx reduce
response time.
3.8 Spread Spectrum
The QT1012 modulates its internal oscillator by ±7.5% during the measurement burst. This spreads the
generated noise over a wider band, reducing emission levels. This also reduces susceptibility since there
is no longer a single fundamental burst frequency.
3.9 Output Polarity Selection
The output (OUT pin) of the QT1012 can be configured to have an active high or active low output by
means of the output configuration resistor Rop. The resistor is connected between the output and either
Vss or Vdd (see Figure 3-4 and Table 3-1). A typical value for Rop is 100 kΩ.
Figure 3-4. Output Polarity (6-pin SOT23)
VDD
OUT
VSS
2
1
5
VDD
Rop
3SNSK Vop
4SNS
Cs
SENSE
ELECTRODE
Rs
TIME 6
Cby
100 nF
Rm
AT42QT1012
© 2017 Microchip Technology Inc. Datasheet DS40001948A-page 12
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Table 3-1. Output Configuration
Name (Vop) Function (Output Polarity)
Vss Active high
Vdd Active low
Note: Some devices, such as Digital Transistors, have an internal biasing network that will naturally pull
the OUT pin to its inactive state. If these are being used then the resistor Rop is not required (see Figure
3-5).
Figure 3-5. Output Connected to Digital Transistor (6-pin SOT23)
Load
VDD
OUT
VSS
2
1
3SNSK
TIME 6
4SNS
Cs
SENSE
ELECTRODE
Rs
Rm
5
VDD
Cby
100 nF
3.10 Output Drive
The OUT pin can sink or source up to 2 mA. When a large value of Cs (>20 nF) is used the OUT current
should be limited to <1 mA to prevent gain-shifting side effects, which happen when the load current
creates voltage drops on the die and bonding wires; these small shifts can materially influence the signal
level to cause detection instability.
3.11 Auto-Off Delay
3.11.1 Introduction
In addition to toggling the output on/off with a key touch, the QT1012 can automatically switch the output
off after a time, typically ±10 percent of the nominal stated time. This feature can be used to save power
in situations where the switched device could be left on inadvertently.
The QT1012 has:
three predefined delay times (Section 3.11.2)
the ability to set a user-programmed delay (Section 3.11.3)
the ability to override the auto-off delay (Section 3.11.5)
AT42QT1012
© 2017 Microchip Technology Inc. Datasheet DS40001948A-page 13
op
The TIME and SNS pins are used to configure the Auto-off delay and must always be connected in one of
the ways described in Section 3.11.2.
3.11.2 Auto-off – Predefined Delay
To configure the predefined delay the TIME pin is hard wired to Vss, Vdd or OUT as shown in Table 3-2
and Table 3-3. This provides nominal values of 15 minutes, 60 minutes or infinity (remains on until
toggled off).
A single 1 MΩ resistor (Rm) is connected between the SNS pin and the logic level Vm to provide three
auto-off functions: delay multiplication, delay override and delay retriggering. On power-up the logic level
at Vm is assessed and the delay multiplication factor is set to x1 or x24 accordingly (see Figure 3-6, Table
3-2 and Table 3-3). At the end of each acquisition cycle the logic level of Vm is monitored to see if an
Auto-off delay override is required (see Section 3.11.5).
Setting the delay multiplier to x24 will decrease the key sensitivity. To compensate, it may be necessary to
increase the value of Cs.
Figure 3-6. Predefined Delay
VDD
OUT
VSS
2
1
4SNS
Rm
Vm
TIME 6Vt
3SNSK
Cs
SENSE
ELECTRODE
Rs
Rop
5
VDD
Cby
100 nF
Table 3-2. Predefined Auto-off Delay (Active High Output)
Vt Auto-off Delay (to)
Vss Infinity (remain on until toggled to off)
Vdd 15 minutes
OUT 60 minutes
AT42QT1012
© 2017 Microchip Technology Inc. Datasheet DS40001948A-page 14
SENSE Vm VS
Table 3-3. Predefined Auto-off Delay (Active Low Output)
Vt Auto-off Delay (to)
Vss 15 minutes
Vdd Infinity (remain on until toggled to off)
OUT 60 minutes
Table 3-4. Auto-off Delay Multiplier
Vm Auto-off Delay Multiplier
Vss to × 1
Vdd to × 24
3.11.3 Auto-off – User-programmed Delay
If a user-programmed delay is required, a RC network (resistor and capacitor) can be used to set the
auto-off delay (see Table 3-5 and Figure 3-7). The delay time is dependent on the RC time constant (Rt ×
Ct), the output polarity and the supply voltage. Section 3.11.4 gives full details of how to configure the
QT1012 to have auto-off delay times ranging from minutes to hours.
Figure 3-7. Programmable Delay
VDD
OUT
VSS
2
1
4SNS
Rm
Vm
TIME 6
3SNSK
Cs
SENSE
ELECTRODE
Rs
Rop
5
VDD
Cby
100 nF
Rop
Cs
3.11.4 Configuring the User-programmed Auto-off Delay
The QT1012 can be configured to give auto-off delays ranging from minutes to hours by means of a
simple RC network and the delay multiplier input.
With the delay multiplier set at x1 the auto-off delay is calculated as follows:
Delay value = integer value of Rt × Ct
x 15 seconds
AT42QT1012
© 2017 Microchip Technology Inc. Datasheet DS40001948A-page 15
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and Rt × Ct = Delay ×
15
Note: Rt is in kΩ, Ct is in nF, Delay is in seconds. K values are obtained from Figure 3-8.
To ensure correct operation it is recommended that the value of Rt × Ct
is between 4 and 240.
Values outside this range may be interpreted as the hard wired options TIME linked to OUT and TIME
linked to “off” respectively, causing the QT1012 to use the relevant predefined auto-off delays.
Table 3-5. Programmable Auto-off Delay (Example)Vm = Vss (delay multiplier = 1), Vdd = 3.5 V
Output Type Auto-off Delay (Seconds)
Active high (Rt × Ct × 15) / 19
Active low (Rt × Ct × 15) / 22
K values (19 and 22) are obtained from Figure 3-8.
Note: Rt is in kΩ, Ct is in nF.
Figure 3-8. Typical Values of K Versus Supply Voltage
The charts in Figure 3-8 show typical values of K versus supply voltage for a QT1012 with active high or
active low output.
Example using the formula to calculate Rt and Ct
Requirements:
Active high output (Vop connected to VSS)
Auto-off delay nominal 45 minutes
VDD = 3.5 V
Proceed as follows:
1. Calculate Auto-off delay in seconds 45 x 60 = 2700
2. Obtain K from Figure 3-8, K = 22.8
3. Calculate Rt × Ct = 2700 × 22.8
15 = 4104
4. Decide on a value for Rt or Ct (for example, Ct = 47 nF)
5. Calculate Rt = 4104
47 = 87 k
6. Verify that RtxCt
= 179 (which is between 4 and 240)
AT42QT1012
© 2017 Microchip Technology Inc. Datasheet DS40001948A-page 16
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As an alternative to calculation, Figure 3-9 and Figure 3-10 show charts of typical curves of auto-off delay
against resistor and capacitor values for active high and active low outputs at various values of VDD
(delay multiplier = x1).
Figure 3-9. Auto-off Delay, Active High Output
Vm = Vss (delay multiplier = x1)
AT42QT1012
© 2017 Microchip Technology Inc. Datasheet DS40001948A-page 17
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Figure 3-10. Auto-off Delay, Active Low Output
Vm = Vss (delay multiplier = x1)
Example using a chart to calculate Rt and Ct
Requirements:
Active low output (Vop connected to VSS)
Auto-off delay 25 minutes
VDD = 4 V
1. Calculate Auto-off delay in seconds 25 × 60 = 1500.
2. Find 1500
1 = 1500 on the 4 V chart in Figure 3-10.
3. This shows the following suitable Ct / Rt combinations:
100 nF / 20 kΩ
47 nF / 40 kΩ
22 nF / 90 kΩ
10 nF / 190 kΩ
Note: The Auto-off delay times shown are nominal and will vary from chip to chip and with
capacitor and resistor tolerance.
3.11.5 Auto-off – Overriding the Auto-off Delay
In normal operation the QT1012 output is turned off automatically after the auto-off delay. In some
applications it may be useful to extend the auto-off delay (“sustain” function) or to switch the output off
immediately (“cancel” function). This can be achieved by pulsing the voltage on the delay multiplier
resistor Rm as shown in Figure 3-11 and Figure 3-12 on page 18.
AT42QT1012
© 2017 Microchip Technology Inc. Datasheet DS40001948A-page 18
VS
To ensure the pulse is detected it must be present for typical times as shown in Table 3-6.
Table 3-6. Time Delay Pulse
Pulse Duration Action
tp – series of short pulses, typically 65 ms “Sustain”/retrigger (reload auto-off delay counter)
tp – long pulse, typically 250 ms “Cancel”/switch output to off state and inhibit further touch
detection until Vm returns to original state
While Vm is held in the override state the QT1012 inhibits bursts and waits for Vm to return to its original
state. When Vm returns to its original state the QT1012 performs a sensor recalibration before continuing
in its current output state.
Figure 3-11. Override Pulse (Delay Multiplier x1)
VDD
OUT
VSS
2
1
4SNS
Rm
Vm
TIME 6
3SNSK
Cs
SENSE
ELECTRODE
Rs
Rop
5
VDD
Cby
100 nF
Vdd
Vss
Tp
AT42QT1012
© 2017 Microchip Technology Inc. Datasheet DS40001948A-page 19
VS
Figure 3-12. Override Pulse (Delay Multiplier x24)
VDD
OUT
VSS
2
1
4SNS
Rm
Vm
TIME 6
3SNSK
Cs
SENSE
ELECTRODE
Rs
Rop
5
VDD
Cby
100 nF
Vdd
Vss
Tp
Figure 3-13 shows override pulses being applied to a QT1012 with delay multiplier set to x1.
Figure 3-13. Overriding Auto-off
SNSK
Vm
C
toff
C C C
OUT
P P P
P - override (reload auto off delay)
O - switch output off (t burst time + 50ms)
C - sensor recalibration
off
Bursts
O
AT42QT1012
© 2017 Microchip Technology Inc. Datasheet DS40001948A-page 20
—«H Aum-offlime obtamed from 3 V chan in Figure 3-10 on page 16 v f5 % 5 D TIME 5 g l Auto-off Mme omained from 5 V chan in Figure 3-9 on page 15
3.12 Examples of Typical Applications
Figure 3-14. Application 1:
Active low, driving PNP transistor, auto-off time 375 s x 24 = 9000 s = 2.5 hours
Auto-off time obtained from 3 V chart in Figure 3-10 on page 16
Load
VDD
TIME
VSS
2
6
5
OUT 1
10k
+3V
SNSK
SNS
4
3
1M
SENSE
ELECTRODE
100nF
47nF
2.2k
DTA143
CS
RS
Rt
Ct
Rm
Auto-off time obtained from 3 V chart in Figure 3-10
Figure 3-15. Application 2:
Active high, driving high impedance, auto-off time 315 s x 1 = 5.25 minutes
Auto-off time obtained from 5 V chart in Figure 3-9 on page 15
VDD
TIME
VSS
2
6
5
OUT 1
10k
+5V
SNSK
SNS
4
3
SENSE
ELECTRODE
100nF
47nF
100k
CS
Rt
Ct
Rs
Rop
Rm
1M
Auto-off time obtained from 5 V chart in Figure 3-9
AT42QT1012
© 2017 Microchip Technology Inc. Datasheet DS40001948A-page 21
4. Circuit Guidelines
4.1 More Information
Refer to Application Note QTAN0002, Secrets of a Successful QTouch Design and the Touch Sensors
Design Guide (both downloadable from the Microchip website), for more information on construction and
design methods.
4.2 Sample Capacitor
Cs is the charge sensing sample capacitor. The required Cs value depends on the thickness of the panel
and its dielectric constant. Thicker panels require larger values of Cs. Typical values are 2.2 nF to 50 nF
depending on the sensitivity required; larger values of Cs demand higher stability and better dielectric to
ensure reliable sensing.
The Cs capacitor should be a stable type, such as X7R ceramic or PPS film. For more consistent sensing
from unit to unit, 5% tolerance capacitors are recommended. X7R ceramic types can be obtained in 5%
tolerance at little or no extra cost. In applications where high sensitivity (long burst length) is required the
use of PPS capacitors is recommended.
For battery powered operation a higher value sample capacitor may be required.
4.3 Rs Resistor
Series resistor Rs is in line with the electrode connection and should be used to limit ESD currents and to
suppress radio frequency interference (RFI). It should be approximately 4.7 kΩ to 33 kΩ.
Although this resistor may be omitted, the device may become susceptible to external noise or RFI. See
Application Note QTAN0002, Secrets of a Successful QTouch Design, for details of how to select these
resistors.
4.4 Power Supply and PCB Layout
See Section 5.2 for the power supply range.
If the power supply is shared with another electronic system, care should be taken to ensure that the
supply is free of digital spikes, sags, and surges which can adversely affect the QT1012. The QT1012 will
track slow changes in Vdd, but it can be badly affected by rapid voltage fluctuations. It is highly
recommended that a separate voltage regulator be used just for the QT1012 to isolate it from power
supply shifts caused by other components.
If desired, the supply can be regulated using a Low Dropout (LDO) regulator, although such regulators
often have poor transient line and load stability. See Application Note QTAN0002, Secrets of a Successful
QTouch Design, for further information on power supply considerations.
Parts placement: The chip should be placed to minimize the SNSK trace length to reduce low frequency
pickup, and to reduce stray Cx which degrades gain. The Cs and Rs resistors (see Figure 1-1) should be
placed as close to the body of the chip as possible so that the trace between Rs and the SNSK pin is very
short, thereby reducing the antenna-like ability of this trace to pick up high frequency signals and feed
them directly into the chip. A ground plane can be used under the chip and the associated discrete
components, but the trace from the Rs resistor and the electrode should not run near ground, to reduce
loading.
AT42QT1012
© 2017 Microchip Technology Inc. Datasheet DS40001948A-page 22
For best EMC performance the circuit should be made entirely with SMT components.
Electrode trace routing: Keep the electrode trace (and the electrode itself) away from other signal, power,
and ground traces including over or next to ground planes. Adjacent switching signals can induce noise
onto the sensing signal; any adjacent trace or ground plane next to, or under, the electrode trace will
cause an increase in Cx load and desensitize the device.
Bypass Capacitor: Important – For proper operation a 100 nF (0.1 μF) ceramic bypass capacitor must be
used directly between Vdd and Vss, to prevent latch-up if there are substantial Vdd transients; for
example, during an ESD event. The bypass capacitor should be placed very close to the VSS and VDD
pins.
4.5 Power On
On initial power up, the QT1012 requires approximately 250 ms to power on to allow power supplies to
stabilize. During this time the OUT pin state is not valid and should be ignored.
Note that recalibration takes approximately 200 ms, so the QT1012 takes approximately 450 ms in total
from initial power on to become active.
AT42QT1012
© 2017 Microchip Technology Inc. Datasheet DS40001948A-page 23
5. Specifications
5.1 Absolute Maximum Specifications
Operating temperature –40°C to +85°C
Storage temperature –55°C to +125°C
Vdd 0 to +6.5 V
Max continuous pin current, any control or drive pin ±20 mA
Short circuit duration to Vss, any pin Infinite
Short circuit duration to Vdd, any pin Infinite
Voltage forced onto any pin –0.6 V to (Vdd + 0.6) V
CAUTION: Stresses beyond those listed under Absolute Maximum Specifications may cause permanent
damage to the device. This is a stress rating only and functional operation of the device at these or
other conditions beyond those indicated in the operational sections of this specification is not implied.
Exposure to absolute maximum specification conditions for extended periods may affect device
reliability
5.2 Recommended Operating Conditions
Vdd +1.8 to +5.5 V
Short-term supply ripple + noise ±20 mV
Long-term supply stability ±100 mV
Cs value 2.2 to 50 nF
Cx value 5 to 20 pF
5.3 AC Specifications
Table 5-1. Vdd = 3.0V, Cs = 10 nF, Cx = 5 pF, Ta = recommended range, unless otherwise noted
Parameter Description Min Typ Max Units Notes
Trc Recalibration time 200 ms Cs, Cx dependent
Tpc Charge duration 3 μs ±7.5% spread spectrum
variation
Tpt Transfer duration 6 μs ±7.5% spread spectrum
variation
Tg1 Time between end of burst and
start of the next (Fast mode)
2.6 – ms
Tg2 Time between end of burst and
start of the next (LP mode)
80 ms Increases with decreasing
Vdd
AT42QT1012
© 2017 Microchip Technology Inc. Datasheet DS40001948A-page 24
Parameter Description Min Typ Max Units Notes
Tbl Burst length 1.86 ms Vdd, Cs and Cx dependent.
See Section 4.2 for capacitor
selection.
Tr Response time 100 ms
5.4 Signal Processing
Table 5-2. Vdd = 3.0V, Cs = 10 nF, Cx = 5 pF, Ta = recommended range, unless otherwise noted
Description Min Typ Max Units Notes
Threshold differential 10 counts
Hysteresis 2 counts
Consensus filter length 4 samples
5.5 DC Specifications
Table 5-3. Vdd = 3.0V, Cs = 4.7 nF, Cx = 5 pF, short charge pulse, Ta = recommended range, unless
otherwise noted
Parameter Description Min Typ Max Units Notes
Vdd Supply voltage 1.8 5.5 V
Idd Supply current 32
36
59
88
124
μA 1.8 V
2.0 V
3.0 V
4.0 V
5.0 V
Vdds Supply turn-on slope 100 V/s Required for proper start-up
Vil Low input logic level 0.2 × Vdd
0.3 × Vdd
V Vdd = 1.8 V – 2.4 V
Vdd = 2.4 V – 5.5 V
Vhl High input logic level 0.7 × Vdd
0.6 × Vdd
V Vdd = 1.8 V – 2.4 V
Vdd = 2.4 V – 5.5 V
Vol Low output voltage 0.6 V OUT, 4 mA sink
Voh High output voltage Vdd – 0.7 V OUT, 1 mA source
Iil Input leakage current ±1 μA
Cx Load capacitance range 0 100 pF
Ar Acquisition resolution 9 14 bits
AT42QT1012
© 2017 Microchip Technology Inc. Datasheet DS40001948A-page 25
Atmel
5.6 Mechanical Dimensions
5.6.1 6-pin SOT23-6
DRAWING NO. REV. TITLE GPC
6ST1 B
1/25/13
TAQ
Package Drawing Contact:
packagedrawings@atmel.com
Notes: 1. This package is compliant with JEDEC specification
MO-178 Variation AB.
2. Dimension D does not include mold Flash, protrusions or
gate burrs. Mold Flash, protrustion or gate burrs shall not
exceed 0.25 mm per end.
3. Dimension b does not include dambar protrusion.
Allowable dambar protrusion shall not cause the lead width
to exceed the maximum b dimension by more than 0.08 mm
4. Die is facing down after trim/form.
MAX NOTE
SYMBOL MIN NOM
COMMON DIMENSIONS
(Unit of Measure = mm)
A 1.45
A1 0 0.15
A2 0.90 1.30
D 2.80 2.90 3.00 2
E 2.60 2.80 3.00
E1 1.50 1.60 1.75
L 0.30 0.45 0.55
e 0.95 BSC
b 0.30 0.50 3
c 0.09 0.20
q
Side View
E E1
D
e
A2 A
A1 C
C
0.10
0.25
L
O
A2 A
A1 C
C
0.10
A
A
SEE VIEW B
C
SEATING PLANE
SEATING PLANE
SEATING PLANE
c
b
Pin #1 ID
1
6
23
54
Top View
View B
View A-A
6ST1, 6-lead, 2.90 x 1.60 mm Plastic Small Outline
Package (SOT23)
Note:  For the most current package drawings, please see the Microchip Packaging Specification located
at http://www.microchip.com/packaging
AT42QT1012
© 2017 Microchip Technology Inc. Datasheet DS40001948A-page 26
9 § ! j Side view AL Bottom View 5‘ L7- U U U U \ fl 7 fl WT AtmeL
5.6.2 8-pin UDFN/USON
DRAWING NO. REV. TITLE GPC
8MA4 B
YAG
Package Drawing Contact:
packagedrawings@atmel.com
01/25/13
8MA4, 8-pad, 2.0x2.0x0.6 mm Body, 0.5 mm pitch,
0.9x1.5 mm Exposed ePad, Ultra-Thin Dual Flat
No Lead Package (UDFN/USON)
f
d
COMMON DIMENSIONS
(Unit of Measure = mm)
SYMBOL MIN NOM MAX NOTE
A - - 0.60
A10.00 - 0.05
b 0.20 - 0.30
D 1.95 2.00 2.05
D2 1.40 1.50 1.60
E 1.95 2.00 2.05
E2 0.80 0.90 1.00
e 0.50 BSC
L 0.20 0.30 0.40
k 0.20 - -
1. All dimensions are in mm. Angles in degrees.
2. Coplanarity applies to the exposed pad as well as the terminals.
Coplanarity shall not exceed 0.05 mm.
3. Warpage shall not exceed 0.05 mm.
4. Refer to JEDEC MO-236/MO-252.
NOTES:
1
4
8
5
b
E2
D2
C0.2
e
D
14
PIN 1 ID
E
5
A1
A
C
C
0.05
0.05
8X
C
2 3
678
L
k
Top view Bottom view
Side view
Side view
A
A1
Note:  For the most current package drawings, please see the Microchip Packaging Specification located
at http://www.microchip.com/packaging
AT42QT1012
© 2017 Microchip Technology Inc. Datasheet DS40001948A-page 27
l—Il—Il—I bbreviaxed 1 O1 2+7 xNumber: O 1012 |_l|_l|_l \101; \H EQ\ N. yzz\
5.7 Part Marking
5.7.1 AT42QT1012– 6-pin SOT23-6
Pin 1 ID
Abbreviated
Part Number:
AT42QT
Note:  Samples of the AT42QT1012 may also be marked T10E.
5.7.2 AT42QT1012 – 8-pin UDFN/USON
Pin 1 ID
Pin 1
Class code
(H = Industrial,
green NiPdAu)
Die Revision
(Example: “E” shown)
Assembly Location
Code
(Example: “Cshown)
Lot Number Trace
code (Variable text)
Last Digit of Year
(Variable text)
Abbreviated
Part Number:
AT42QT1012
Note:  Samples of the AT42QT1012 may also be marked T10
5.8 Part Number
Part Number Description
AT42QT1012(1) 6-pin SOT23 RoHS compliant IC
AT42QT1012-TSHR 6-pin SOT23 RoHS compliant IC
AT42QT1012-MAH 8-pin UDFN/USON RoHS compliant IC
Notes: 1. Marking details:
Top mark 1st line: ddddTY
Top mark 2nd line: wwxxx
dddd= device, special code
T= Type
Y= Year last digit
ww= calendar workweek
xxx = trace code
AT42QT1012
© 2017 Microchip Technology Inc. Datasheet DS40001948A-page 28
5.9 Moisture Sensitivity Level (MSL)
MSL Rating Peak Body Temperature Specifications
MSL1 260oC IPC/JEDEC J-STD-020
AT42QT1012
© 2017 Microchip Technology Inc. Datasheet DS40001948A-page 29
6. Associated Documents
For additional information, refer to the following document (downloadable from the Touch Technology
area of the Microchip website, www.microchip.com):
Touch Sensors Design Guide
QTAN0002 – Secrets of a Successful QTouch® Design
AT42QT1012
© 2017 Microchip Technology Inc. Datasheet DS40001948A-page 30
7. Revision History
Revision No. History
Revision A – May 2009 Initial release
Revision B – August 2009 Update for chip revision 2.2
Revision C – August 2009 Minor update for clarity
Revision D – January 2010 Power specifications updated for revision 2.4.1
Revision E – January 2010 Part markings updated
Revision F – February 2010 MSL specification revised
Other minor updates
Revision G – March 2010 Update for chip revision 2.6
Revision H – May 2010 UDFN/USON package added
Revision I – May 2013 Applied new template
DS40001948A – August 2017 Part marking clarification added. Replaces Atmel document 9543I.
AT42QT1012
© 2017 Microchip Technology Inc. Datasheet DS40001948A-page 31
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Note the following details of the code protection feature on Microchip devices:
Microchip products meet the specification contained in their particular Microchip Data Sheet.
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There are dishonest and possibly illegal methods used to breach the code protection feature. All of
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Microchip is willing to work with the customer who is concerned about the integrity of their code.
AT42QT1012
© 2017 Microchip Technology Inc. Datasheet DS40001948A-page 32
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their
code. Code protection does not mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the
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AT42QT1012
© 2017 Microchip Technology Inc. Datasheet DS40001948A-page 33
ISBN: 978-1-5224-2071-2
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AT42QT1012
© 2017 Microchip Technology Inc. Datasheet DS40001948A-page 34
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Tel: 31-416-690399
Fax: 31-416-690340
Norway - Trondheim
Tel: 47-7289-7561
Poland - Warsaw
Tel: 48-22-3325737
Romania - Bucharest
Tel: 40-21-407-87-50
Spain - Madrid
Tel: 34-91-708-08-90
Fax: 34-91-708-08-91
Sweden - Gothenberg
Tel: 46-31-704-60-40
Sweden - Stockholm
Tel: 46-8-5090-4654
UK - Wokingham
Tel: 44-118-921-5800
Fax: 44-118-921-5820
Worldwide Sales and Service
© 2017 Microchip Technology Inc. Datasheet DS40001948A-page 35

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